Claims
- 1. A method of preparing a silicon nitride-containing ceramic material which method consists of heating a R.sub.3 SiNH-containing hydrosilazane polymer in an inert atmosphere or in a vacuum to a temperature of at least 750.degree. C. until said R.sub.3 SiNH-containing hydrosilazane polymer is converted to a silicon nitride-containing ceramic material, said R.sub.3 SiNH-containing hydrosilazane polymer having been obtained by a process which consisted of contacting and reacting, in an inert, essentially anhydrous atmosphere, trichlorosilane with a disilazane at a temperature in the range of 25.degree. to 300.degree. C. while distilling by-produced volatile products, wherein said disilazane had the general formula
- (R.sub.3 Si).sub.2 NH
- where R is selected from the group consisting of vinyl, hydrogen, phenyl, and alkyl radicals containing 1 to 3 carbon atoms.
- 2. A method as defined in claim 1 wherein said trichlorosilane was purified prior to contacting and reacting with said disilazane at a temperature in the range of 125.degree. to 175.degree. C.
- 3. A method as defined in claim 1 wherein said trichlorosilane and said disilazane were contacted in such a manner that the initial reaction temperature resulting from the initial exotherm was less than 50.degree. C.
- 4. A method as defined in claim 2 wherein said trichlorosilane and said disilazane were contacted in such a manner that the initial reaction temperature resulting from the initial exotherm was less than 50.degree. C.
- 5. A method as defined in claim 3 wherein the initial reaction temperature resulting from the initial exotherm was less than 35.degree. C.
- 6. A method as defined in claim 4 wherein the initial reaction temperature resulting from the initial exotherm was less than 35.degree. C.
- 7. A method as defined in claim 1 wherein (R.sub.3 Si).sub.2 NH was [(CH.sub.3).sub.3 Si].sub.2 NH.
- 8. A method as defined in claim 1 wherein (R.sub.3 Si).sub.2 NH was [(CH.sub.3).sub.2 CH.sub.2 .dbd.CHSi].sub.2 NH.
- 9. A method as defined in claim 1 wherein (R.sub.3 Si).sub.2 NH was [CH.sub.3 (C.sub.6 H.sub.5).sub.2 Si].sub.2 NH.
- 10. A method as defined in claim 1 wherein (R.sub.3 Si).sub.2 NH was [C.sub.6 H.sub.5 (CH.sub.3).sub.2 Si].sub.2 NH.
- 11. A method as defined in claim 1 wherein (R.sub.3 Si).sub.2 NH was [H(CH.sub.3).sub.2 Si].sub.2 NH.
- 12. A method as defined in claim 2 wherein (R.sub.3 Si).sub.2 NH was [(CH.sub.3).sub.3 Si].sub.2 NH.
- 13. A method as defined in claim 2 wherein (R.sub.3 Si).sub.2 NH was [(CH.sub.3).sub.2 CH.sub.2 .dbd.CHSi].sub.2 NH.
- 14. A method as defined in claim 2 wherein (R.sub.3 Si).sub.2 NH was [CH.sub.3 (C.sub.6 H.sub.5).sub.2 Si].sub.2 NH.
- 15. A method as defined in claim 2 wherein (R.sub.3 Si).sub.2 NH was [C.sub.6 H.sub.5 (CH.sub.3).sub.2 Si].sub.2 NH.
- 16. A method as defined in claim 2 wherein (R.sub.3 Si).sub.2 NH was [H(CH.sub.3).sub.2 Si].sub.2 NH.
- 17. A method as defined in claim 4 wherein (R.sub.3 Si).sub.2 NH was [(CH.sub.3).sub.3 Si].sub.2 NH.
- 18. A method as defined in claim 4 wherein (R.sub.3 Si).sub.2 NH was [(CH.sub.3).sub.2 CH.sub.2 .dbd.CHSi].sub.2 NH.
- 19. A method as defined in claim 4 wherein (R.sub.3 Si).sub.2 NH was [CH.sub.3 (C.sub.6 H.sub.5).sub.2 Si].sub.2 NH.
- 20. A method as defined in claim 4 wherein (R.sub.3 Si).sub.2 NH was [C.sub.6 H.sub.5 (CH.sub.3).sub.2 Si].sub.2 NH.
- 21. A method as defined in claim 4 wherein (R.sub.3 Si).sub.2 NH was [H(CH.sub.3).sub.2 Si].sub.2 NH.
- 22. A silicon nitride-containing ceramic material as prepared by the method of claim 1.
- 23. A silicon nitride-containing ceramic material as prepared by the method of claim 2.
- 24. A silicon nitride-containing ceramic material as prepared by the method of claim 4.
Parent Case Info
This is a divisional of co-pending application Ser. No. 555,755 filed on Nov. 28, 1983.
US Referenced Citations (5)
Divisions (1)
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Number |
Date |
Country |
Parent |
555755 |
Nov 1983 |
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