Claims
- 1. A silicon nitride ceramic comprising:
- a) inclusions no greater than 25 microns in length,
- b) agglomerates no greater than 20 microns in diameter, and
- c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.
- 2. The silicon nitride of claim 1 having no more than 0.4 v/o porosity.
- 3. The silicon nitride of claim 2 further comprising 4 weight percent sintering aid, as sintering aid oxide.
- 4. The silicon nitride of claim 3 wherein the sintering aid comprises a rare earth, as rare earth oxide.
- 5. The silicon nitride of claim 3 wherein the sintering aid consists essentially of a rare earth, as rare earth oxide.
- 6. The silicon nitride of claim 5 wherein the rare earth is yttrium.
- 7. The silicon nitride of claim 2 having a toughness of at least about 6.2 MPa m1/2.
- 8. The silicon nitride of claim 2 wherein between about 20 v/o and about 30 v/o of the silicon nitride is in the alpha phase.
- 9. The silicon nitride of claim 8 further comprising at least about 50 w/o beta silicon nitride grains wherein at least about 80 w/o of the beta silicon nitride grains have thickness of less than about 1.0 microns.
- 10. The silicone nitride of claim 9 wherein at least about 95 w/o of the beta silicon nitride grains have an aspect ratio of at least about 4.
- 11. The silicon nitride of claim 1 further comprising 4 weight percent sintering aid, as sintering aid oxide.
- 12. The silicon nitride of claim 11 wherein the sintering aid comprises a rare earth, as rare earth oxide.
- 13. The silicon nitride of claim 11 wherein the sintering aid consists essentially of a rare earth, as rare earth oxide.
- 14. The silicon nitride of claim 13 wherein the rare earth is yttrium.
- 15. The silicon nitride of claim 1 having a toughness of at least about 6.2 MPa m1/2.
- 16. The silicon nitride of claim 1 wherein between about 20 v/o and about 30 v/o of the silicon nitride is in the alpha phase.
- 17. The silicon nitride of claim 16 further comprising at least about 50 w/o beta silicon nitride grains wherein at least about 80 w/o of the beta silicon nitride grains have thickness of less than about 1.0 microns.
- 18. The silicon nitride of claim 17 wherein at least about 95 w/o of the beta silicon nitride grains have an aspect ratio of at least about 4.
Parent Case Info
This is a divisional of application Ser. No. 08/113,477 filed on Aug. 27, 1993 now abandoned.
STATEMENT OF GOVERNMENT SUPPORT
This invention was developed under U.S. Government Contract No. DE-AC05-84OR21400 awarded by The United States Department of Energy.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
178169 |
Apr 1986 |
EPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
113477 |
Aug 1993 |
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