Claims
- 1. A method of producing a silicon nitride powder comprising powder particles which are crystalline in their interior and coated on their surfaces with a 1-10 nm thick amorphous layer composed mainly of Si, N, O, and H, and having an atomic number ratio of oxygen to nitrogen (O/N) in a surface layer of within a range of 0.1-2.0 comprising the steps of heat treating a silicon nitride powder in an inert gas or a reducing atmosphere at 100.degree. C.-1000.degree. C. for 5 min.-600 min., and thereafter heat treating the silicon nitride powder in an oxidizing atmosphere at 300.degree. C.-1200.degree. C. for 5 min.-600 min.
- 2. The method for treating nitride powder as in claim 1 wherein the silicon nitride powder thus produced has the characteristics such that when immersed in neutral water or hot water, the resultant aqueous solution shows a pH within a range of 2-8.
- 3. The method for treating nitride powder as in claim 1 wherein the silicon nitride powder thus produced contains fluorine ions and, when the powder is immersed in neutral water or hot water, the fluorine ions are eluted from the surface relative to 1 g of the powder at a rate of 1 mg lg or less.
- 4. The method for producing a silicon nitride powder as claimed in claim 1, wherein the two steps for heat treating a silicon nitride powder are carried out continuously.
- 5. The method for producing a silicon nitride powder as claimed in claim 1 or 4, wherein a heating rate and cooling rate of the heat treating steps are each within a range of 0.5.degree.-50.degree. C./min.
- 6. The method for producing a silicon nitride powder as claimed in claim 1 or 4, wherein the inert gas or the reducing gas is at least one gas selected from the group consisting of nitrogen, argon, helium, ammonium, and hydrogen.
- 7. The method for producing a silicon nitride powder as claimed in claim 1 or 4, wherein the oxidizing atmosphere contains oxygen or water vapor.
- 8. The method for producing a silicon nitride powder as claimed in claim 1 or 4, wherein treatment temperature in the oxidizing atmosphere is within a range of 500.degree.-900.degree. C.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-96639 |
Mar 1993 |
JPX |
|
6-76631 |
Mar 1994 |
JPX |
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Parent Case Info
This is a Divisional of application Ser. No. 08/219,377, filed Mar. 29, 1994 now U.S. Pat. No. 5,478,649.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5030434 |
Pitzer et al. |
Jul 1991 |
|
5248490 |
Krause |
Sep 1993 |
|
Divisions (1)
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Number |
Date |
Country |
Parent |
219377 |
Mar 1994 |
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