Claims
- 1. Apparatus for emitting varying colors of light comprising:
- a lasing layer formed of crystalline silicon quantum dots formed in an isolation matrix of hydrogenated silicon;
- said quantum dots being formed in three patches;
- each of said three patches having different sized quantum dots therein to thereby produce three different colors of light;
- a barrier layer of p-type semiconductor under said lasing layer, said p-type semiconductor being selected from the group GaP, SiC, GaN, ZnS;
- a substrate member under said barrier layer;
- an n-type semiconductor layer above said lasing layer, said n-type semiconductor layer being selected from the group GaP, SiC, GaN, ZnS;
- a positive potential contact beneath said substrate member;
- three negative potential contacts;
- each of said three contacts being above a different one of said three patches;
- each of said three contacts acting with said positive contact to selectively bias a different one of said three patches;
- three sectors of concentric grating surrounding said three patches;
- each of said sectors having a radial period corresponding to the color of light produced by an adjacent one of said three patches; and
- each of said sectors resonating photons emitted by said adjacent patch to stimulate coherent light emission.
- 2. The apparatus of claim 1 including:
- a dielectric mirror between said barrier layer and said substrate member.
- 3. Apparatus for emitting varying colors of light comprising:
- a lasing layer formed of crystalline silicon quantum dots formed in an isolation matrix of hydrogenated silicon;
- said quantum dots being formed in three patches;
- each of said three patches having different sized quantum dots therein to thereby produce three different colors of light;
- a semiconductor barrier layer of one-conductivity-type under said lasing layer, said one-conductivity-type semiconductor being selected from the group GaP, SiC, GaN, ZnS;
- a substrate member under said barrier layer;
- a semiconductor layer of a conductivity type that is opposite to said one-conductivity-type above said lasing layer, said opposite conductivity type semiconductor layer being selected from the group GaP, SiC, GaN, ZnS;
- a first electrical contact beneath said substrate member;
- second, third and fourth electrical contacts;
- each of said second, third and fourth electrical contacts being above a different one of said three patches;
- each of said second, third and fourth electrical contacts acting with said first electrical contact to selectively bias a different one of said three patches;
- three sectors of concentric grating surrounding said three patches;
- each of said sectors having a radial period corresponding to the color of light produced by an adjacent one of said three patches; and
- each of said sectors resonating photons emitted by said adjacent patch to stimulate coherent light emission.
- 4. The apparatus of claim 3 including:
- a dielectric mirror between said barrier layer and said substrate member.
Parent Case Info
This application is a continuation in part of patent application Ser. No. 08/473,523 filed on Jun. 7, 1995 for SILICON QUANTUM DOT LASER, now U.S. Pat. No. 5,559,822.
Government Interests
This invention was made with Government support awarded by the National Science Foundation and also by the U.S. Air Force Office of Scientific Research under contract number F49620-92-J-0482. The Government has certain rights in this invention.
US Referenced Citations (8)
Non-Patent Literature Citations (1)
Entry |
Article "Transfer of Biologically Derived Nanometer-Scale Patterns of Smooth Subtrates" By K. Douglas et al, SCIENCE, vol. 257, 7/31/92, pp. 642-644. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
473523 |
Jun 1995 |
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