SILICON SEMICONDUCTOR BASED HIGH-SPEED RING OPTICAL MODULATOR

Abstract

Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

FIG. 1 is a schematic view of a conventional optical modulator using a ring resonator according to an embodiment of the present invention;

FIG. 2 is a graph illustrating the transmittance characteristic of light in the case when a current is supplied to a ring waveguide of the optical modulator of FIG. 1 and when a current is not supplied;

FIG. 3 is a cross-sectional view illustrating a P-I-N diode used in a ring waveguide;

FIG. 4 is a cross-sectional view illustrating a bipolar transistor used in a ring optical modulator according to an embodiment of the present invention;

FIGS. 5A and 5B are cross-sectional views illustrating the structures of silicon semiconductor substrates that can be used for refractive index variation of a ring optical waveguide according to embodiments of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals in the drawings denote like elements. The terms used herein are for illustrative purpose of the present invention only and should not be construed to limit the meaning or the scope of the present invention as described in the claims.

The present invention provides an optical modulator using a ring resonator including a ring waveguide formed using a bipolar transistor to increase the modulation speed. First of all, the relationship between the variation of the refractive index and the confinement ratio will be described.

The variation of refractive index Δn is usually decided by an input wavelength and the amount of carriers in the waveguide. Equation (1) below represents the variation of the refractive index Δn when the input wavelength is 1.55 μm.

Δn=−[8.8×10⁻²²*ΔN+8.5×10⁻¹⁸*(ΔP)^0.8]  Equation (1)

where ΔN and ΔP are variations of densities of electrons and holes, respectively, in units of cm⁻³. As can be seen from Equation (1), the greater the variation of the amount of electrons and holes, the greater the refractive index. The variation of the refractive index according to applied current is smaller in the case of a silicon semiconductor than in the case of a compound semiconductor. Thus, in a silicon semiconductor, there should be a large variation of current and a large area where the number of holes and electrons is being varied.

As a matter of fact, the confinement ratio ┌ should be sufficient for light transmitted through the optical waveguide to generate large variation of the refractive index. The confinement ratio ┌ is defined as the intensity of light having variation of the refractive index with respect to the intensity of the entire light. The substantial variation of effective refractive index of light is Δn_eff=┌×Δn.

FIG. 4 is a cross-sectional view illustrating a bipolar transistor used in a ring optical modulator according to an embodiment of the present invention;

Referring to FIG. 4, the ring optical waveguide using a bipolar transistor includes a substrate 100, an insulating layer 120, and a semiconductor activation layer. The semiconductor activation layer includes an emitter region 140, a base region 150, a collector region 160, and a sub-collector region 130 through which light is transmitted.

According to the current embodiment of the present invention, the substrate 100 is formed of silicon, the insulating layer 120 is a silicon oxide layer, and the semiconductor activation layer is a silicon layer doped with carriers. The ring optical waveguide can be formed using a silicon-on-insulator (SOI) substrate structure, but is not limited thereto. The emitter region 140 of the semiconductor activation layer is a high-density n-type doping layer (n⁺), the base region 150 is a p-type doping layer, and the collector region 160 is a high-density n-type doping layer (n⁺). Thus, the bipolar transistor according to the current embodiment of the present invention is an n-p-n type bipolar transistor. The sub-collector region 130 through which light is transmitted is formed as a low-density n-type doping layer to increase the variation of carriers by applied current, thereby increasing the variation of the refractive index. Instead of the n-p-n type, a p-n-p type bipolar transistor can also be used.

When the bipolar transistor as described above is used as a ring optical waveguide, variation of the effective refractive index can be increased.

When the bipolar transistor is used in the ring optical waveguide as in the current embodiment of the present invention, regarding the supply of carriers, carriers can be injected to the base region 150 which has a small volume, and thus time for supplying carriers is short. With respect to discharging of carriers, when carriers are discharged from the sub-collector region 130 in the case of the bipolar transistor, minority carriers are not related, and thus carriers can be discharged at high speed without being affected by the lifetime of the minority carriers. Consequently, using the bipolar transistor, carriers can be supplied and discharged at high speed to and from the region through which light is transmitted, that is, the sub-collector region 130, and thus light can be modulated at high speed.

Also, by using the bipolar transistor as in the current embodiment of the present invention, it is easy to form a turn-on driver. That is, in the bipolar transistor, a large current swing is possible in the region through light is transmitted by a small current swing in the base region 150. In other words, when a current gain of the bipolar transistor is β, only 1/β of the current that flows through the region through which light is transmitted is needed to be supplied to the base region 150 in the turn-on driver using the bipolar transistor.

In general, in order to form a ring optical waveguide using a semiconductor, the refractive index of the region through which light is transmitted should be higher than the refractive index of the neighboring region. Light is transmitted through the region where the refractive index is higher than that of the neighboring region.

In detail, the refractive index in the region where the doping density is low is generally higher than the refractive index in the region where the doping density is high.

FIGS. 5A and 5B are cross-sectional views illustrating the structure of silicon semiconductor substrates that can be used for refractive index variation of a ring optical waveguide according to embodiments of the present invention.

Referring to FIG. 5A, a substrate for a ring optical waveguide is formed by selectively injecting oxygen ions (O⁻²) to a silicon bulk substrate. Accordingly, the substrate for a ring optical waveguide is formed of a lower silicon layer 200, a silicon oxide layer 220, and an upper silicon layer 240. In general, the refractive index of silicon is about 3.5, and the refractive index of silicon oxide is about 1.7, and thus the upper silicon layer 240 functions as a waveguide. Since air has a refractive index of almost 1, no other material layer needs to be formed on the upper silicon layer 240. However, a silicon oxide layer may be formed on a surface of the upper silicon layer 240 according to requirements.

FIG. 5B illustrates another substrate for an optical waveguide. Referring to FIG. 5B, the substrate for an optical waveguide is formed of material layers having different refractive indices by selectively doping carrier ions and oxygen ions on a silicon bulk substrate. Accordingly, the substrate for a ring optical waveguide illustrated in FIG. 5B includes a silicon layer 300, a high-density doping layer 320, a low-density doping layer 340, and a silicon oxide layer 360. As described above, the lower the doping density, the higher the refractive index. Thus the low-density doping layer 340 functions as a waveguide. The high-density doping layer 320 and the low-density doping layer 340 are n-type or p-type semiconductor layers doped with Group 3 or 5 elements.

The silicon semiconductor substrates illustrated in FIGS. 5A and 5B can be used in an optical modulator, particularly in a ring optical waveguide. In particular, a bipolar transistor can be formed using the silicon semiconductor substrates of FIGS. 5A and 5B for a ring optical waveguide to increase variation of the effective refractive index, and accordingly, an optical modulator having several advantages as described above can be realized.

Although an optical modulator using a ring resonator, that is, a ring optical modulator has been described until now, the present invention is not limited to a ring optical modulator. That is, a bipolar transistor can be used not only in a ring optical modulator but also in a refractive index variation portion in an optical modulator formed using a semiconductor. Furthermore, a bipolar transistor can be used in all kinds of optical devices formed using a semiconductor in which refractive index can be varied by supplying a current to the bipolar transistor.

As described above, the high-speed ring optical modulator based on a silicon semiconductor according to the present invention uses a bipolar transistor structure in a refractive index variation portion, carriers can be supplied to and discharged from a region through which light is transmitted at high speed, and thus light can be modulated at high speed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.

Claims

1. A high-speed ring optical modulator based on a silicon semiconductor, the ring optical modulator comprising: a ring optical waveguide in which a refractive index variation portion is formed; andan optical waveguide having a constant refractive index,wherein the refractive index variation portion is formed using a bipolar transistor structure.

2. The high-speed ring optical modulator of claim 1, wherein the effective refractive index variation Δneff of the refractive index variation portion is represented as ┌×Δn, where ┌ is a confinement ratio and Δn is refractive index variation, anda low doping region of a collector region of the bipolar transistor, that is, a sub-collector region, is used in the refractive index variation portion.

3. The high-speed ring optical modulator of claim 2, wherein carriers are supplied to and discharged from the sub-collector region.

4. The high-speed ring optical modulator of claim 2, wherein Δneff is generated by a predetermined current flowing through the sub-collector region.

5. The high-speed ring optical modulator of claim 4, wherein the current flowing through the sub-collector region is adjusted by adjusting the current supplied to a base of the bipolar transistor, and the current flowing through the sub-collector region is a product of the current gain β of the bipolar transistor and the current supplied to the base of the bipolar transistor.

6. The high-speed ring optical modulator of claim 1, wherein the ring optical waveguide, in which the refractive index variation portion is formed, is formed using a silicon-on-insulator (SOI) substrate.

7. The high-speed ring optical modulator of claim 6, wherein an insulator of the SOI substrate is formed by selectively implanting oxygen ions to a silicon bulk substrate.

8. The high-speed ring optical modulator of claim 7, wherein a low doping region of a collector region of the bipolar transistor, that is, a sub-collector region, is used in the refractive index variation portion.

9. The high-speed ring optical modulator of claim 8, wherein the sub-collector region is formed of a silicon semiconductor layer on the insulator of the SOI substrate.

10. The high-speed ring optical modulator of claim 1, wherein the ring optical waveguide in which the refractive index variation portion is formed comprises a high-density doping layer, a low-density doping layer, and an oxide layer formed on a silicon substrate.

11. The high-speed ring optical modulator of claim 10, wherein the high and low density doping layers are n-type or p-type semiconductor layers which are doped with Group 3 or 5 elements, and the oxide layer is a silicon oxide (SiO2) layer which is doped with oxygen ions.