Claims
- 1. Crystalline zeolite aluminosilicate having extraneous silicon atoms in its crystal lattice in the form of framework SiO.sub.4 tetrahedra, and having in the dehydrated state a chemical composition expressed in terms of mole ratios of oxides
- 0.9.+-.0.1M.sub.2/n O:Al.sub.2 O.sub.3 :xSiO.sub.2
- wherein "M" is a cation having the valence of "n" and wherein said aluminosilicate has a combination of X-ray powder diffraction pattern and a value for "x" selected from the group consisting of:
- (i) a value for "x" of greater than 8 and an X-ray powder diffraction pattern having at least the d-spacings set forth in Table G or Table H or Table K or Table I; and
- (ii) a value for "x" of greater than 7, and an X-ray powder diffraction pattern having at least the d-spacings set forth in Table D; and
- (iii) a value for "x" of greater than 11, and an X-ray powder diffraction pattern having at least the d-spacings set forth in Table J; and
- (iv) a value for "x" of greater than 20, and an X-ray powder diffraction pattern having at least the d-spacings set forth in Table L.
- 2. A crystalline aluminosilicate having at least some of its original framework aluminum atoms replaced by extraneous silicon atoms and having the chemical composition
- [Al.sub.(a-N) Si.sub.b+(N-.DELTA.z) .quadrature..sub.z ]O.sub.2
- wherein Al.sub.(a-N) represents the mole fraction of aluminum tetrahedra in the product zeolite; "a" represents the mole fraction of aluminum tetrahedra in the original zeolite; "N" represents the mole fraction of aluminum tetrahedra removed from the original zeolite, and has a value of at least 0.3a; Si.sub.b+(N-.DELTA.z) represents the mole fraction of silicon tetrahedra in the product zeolite; "b" represents the mole fraction of silicon tetrahedra in the original zeolite; (N-.DELTA.z) represents the mole fraction of silicon tetrahedra resulting from the substitution of extraneous silicon into the crystal lattice; ".quadrature." represents the framework defect sites; "z" represents the mole fraction of framework defect sites; .DELTA."z" represents the difference between the mole fraction of framework defect sites of the original zeolite and the zeolite containing the extraneous silicon atoms and has a value of less than 0.08; (N-.DELTA.z)/N has a value at least as great as 0.5, and possesses a combination of X-ray powder diffraction patterns and a value for the term [b+(N-.DELTA.z)]/(a-N) selected from the group of such combinations consisting of
- (i) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table J and a value for [b+(N-.DELTA.z)]/(a-N) of at least 5.5; and
- (ii) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table L and a value for [b+(N-.DELTA.z)]/(a-N) of at least greater than 10; and
- (iii) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table D and a value for [b+(N-.DELTA.z)]/(a-N) of at least 4.0; and
- (iv) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table G and a value for [b+(N-.DELTA.z)]/(a-N) of at least 4.0; and
- (v) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table H and a value for [b+(N-.DELTA.z)]/(a-N) of at least 4.0; and
- (vi) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table I and a value for [b+(N-.DELTA.z)]/(a-N) of at least 4.0; and
- (vii) an X-ray powder diffraction pattern having at least the d-spacings set forth in Table K and a value for [b+(N-.DELTA.z)]/(a-N) of at least 4.0.
- 3. Crystalline aluminosilicate according to claim 2 wherein the value of .DELTA.z is less than 0.05.
- 4. Crystalline aluminosilicate composition according to claim 1 wherein "x" has a value of from 8 to 120, the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table D.
- 5. Crystalline aluminosilicate composition according to claim 1 wherein "x" has a value of from 8 to 60, the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table G.
- 6. Crystalline aluminosilicate composition according to claim 1 wherein "x" has a value of from 8 to 20, the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table I.
- 7. Crystalline aluminosilicate composition according to claim 1 wherein the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table H.
- 8. Crystalline aluminosilicate composition according to claim 1 wherein "x" has a value of from 12 to 20, the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table J.
- 9. Crystalline aluminosilicate composition according to claim 1 wherein "x" has a value of from 8 to 20, the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table K.
- 10. Crystalline aluminosilicate composition according to claim 1 wherein "x" has a value of from 22 to 60, the extraneous silicon atoms are present in an amount of at least 1.0 per 10,000 A.sup.3, and the aluminosilicate has an X-ray powder diffraction pattern having at least the d-spacings set forth in Table L.
RELATED APPLICATIONS
This application is a division of prior U.S. application Ser. No. 315,853 filed Oct. 28, 1981, now U.S. Pat. No. 4,503,023, which is a continuation-in-part of application Ser. No. 066,330, now abandoned, filed Aug. 14, 1979.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
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Parent |
315853 |
Oct 1981 |
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Continuation in Parts (1)
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66330 |
Aug 1979 |
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