The present invention relates to the field of photovoltaic devices, in particular 2-terminal perovskite tandem type photovoltaic cells on a silicon heterojunction.
The invention relates to a simplified structure having (photo)electrical properties comparable to those of a conventional tandem structure.
Solar cells allow converting a portion of the spectral domain of solar radiation into energy. To increase the yield of this conversion, it is possible to manufacture structures with a tandem architecture comprising two subsets (i.e. a lower cell and an upper cell), absorbing in different spectral domains.
Many configurations are possible. For example, the lower cell 10 may be a cell made of perovskite, CIGS (Cu(In,Ga)Se2), or it may consist of a silicon-based cell, for example, with a homojunction or with a silicon heterojunction (HET-Si or SHJ standing for “Silicon HeteroJunction solar cell”), of the PERC (“Passivated Emitter and Rear Contact”) or TopCon (“Tunnel Oxide Passivated Contact”) type or an N-type PERT cell with double diffusion of phosphorus.
For example, the upper cell 30 may be a perovskite, organic or multi-junction cell (MJSC) based on III-V materials (AlGaAs, GaInP, GaAs).
The two sub-cells are stacked on top of each other according to a NIP/NIP (
For illustration, in the case of 2-terminal perovskite-type tandem structures on a silicon heterojunction, the NIP-type structure conventionally comprises from the rear face to the front face (
Lower and upper electrodes 40, 50 as well as electrical contacts 60, 70 complete the structure.
In the case of a PIN-type structure, the P and N type layers are reversed and the structure conventionally comprises from the rear face to the front face (
a lower cell 10 comprising a layer of P-doped amorphous silicon 15 ((p) a-Si:H), a substrate of n-type doped crystalline silicon 12 (c-Si(n)), disposed between two layers of intrinsic amorphous silicon 13, 14 ((i) a-Si:H), a layer of N-type doped amorphous silicon 11 ((n) a-Si:H),
Each sub-cell 10, 30 of the tandem structure includes layers which allow separating and selecting the charges according to their polarity.
The recombination zone 20 between the two sub-cells is called “recombination junction” because it enables the charges to recombine. It also enables the serial connection of the sub-cells and thus the addition of their voltages. It should lead to the recombination of the electrons generated in the upper cell and the holes generated in the lower cell for a NIP structure tandem (
However, these tandem structures require many steps to be manufactured, which increases the manufacturing costs and the number of layers and interfaces likely to lower the performances (by adding serial resistance, contact resistances, undesirable recombinations, etc.).
It has been shown that a NIP-like tandem structure comprising a perovskite upper cell and a lower cell based on crystalline silicon and poly-Si could function by directly positioning the upper cell over the lower cell (Shen et al. “In situ recombination junction between p-Si and TiO2 enables high-efficiency monolithic perovskite/Si tandem cells”, Science Advances, 2018; 4: eaau9711). More particularly, a layer of N-type TiO2 is deposited by ALD directly over the P-doped silicon of the lower cell. Then, a layer of perovskite and a P-type layer made of PTAA are deposited. The operation of this structure is made possible thanks to the low contact resistivity between the ALD layer of TiO2 and the P-doped silicon of the lower cell.
Similarly, a perovskite tandem structure on a silicon heterojunction has been manufactured by directly depositing the layer of N-type SnO2 of the upper cell made of perovskite over the P-type layer of the lower cell (Zheng et al. “Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency”, Energy Environ. Sci., 2018, 11, 2432-2443).
However, to date, there is no simplified perovskite tandem structure on a silicon heterojunction based on amorphous silicon and crystalline silicon. Indeed, the amorphous silicon/crystalline silicon heterojunction is very sensitive to the temperature used during the process. In addition, the deposition of the perovskite active layer is generally carried out by liquid means and is therefore greatly dependent on the substrate over which it is deposited as well as the implemented manufacturing steps, which makes a modification of their architecture very difficult to carry out.
The present invention aims to propose a two-terminal perovskite tandem structure on a silicon heterojunction based on amorphous silicon and crystalline silicon having good electrical properties and which is simpler and less expensive to manufacture.
For this purpose, the present invention provides a structure of 2-terminal perovskite tandem solar cells on a silicon heterojunction based on amorphous silicon and crystalline silicon comprising from the rear face to the front face:
The invention differs essentially from the prior art in that in these structures, one of the layers of the recombination zone has a dual function: both the role of charge selection (N or P type contact) and participates in the recombination junction function.
This functional structure enables the recombination of charges and the serial connection between the two sub-cells, without adding an additional layer and/or material between the two sub-cells of the tandem structure, as is the case in conventional tandem structures.
The recombination zone is a fully recombinant P-N junction (regardless of the recombination mechanisms). The recombination zone generates no reverse potential: no voltage drop in the tandem solar cell.
This simplified structure is simpler to manufacture compared to the structures of conventional tandem solar cells. The reduction in the number of structural layers and therefore of steps in the manufacturing process results in a reduction in manufacturing costs.
According to a first variant, the first conductivity type is an N-type conductivity (i.e. it is a NIP-type tandem structure).
According to this first variant, the structure may comprise from the rear face to the front face:
The recombination zone is then formed of the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type (P type) and of the second layer of the first conductivity type (N type). These two layers are in direct contact.
With such an architecture, the upper cell is a conventional cell. This configuration allows obtaining high yields.
Alternatively, according to this same first variant, the structure may comprise from the rear face to the front face:
The recombination zone is then formed of the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type (P type) and of the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type (N type) which form a tunnel junction. The layer based on nanocrystalline or microcrystalline silicon of the first conductivity type (N type) also serves as a charge extractor in the second cell (perovskite). There is no need to add a layer of the first conductivity type (N type), such as an SnO2 layer, in the second solar cell. The active layer of the second solar cell is in direct contact with the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type (N type).
With this architecture, the layers based on nanocrystalline or microcrystalline silicon may be deposited in the same equipment as the layers made of amorphous silicon of the lower cell and over large surfaces in a homogeneous manner, which simplifies the manufacturing process and facilitates the obtainment of a homogeneous perovskite layer.
According to a second variant, the first conductivity type is a P-type conductivity (i.e. it consists of a PIN-type tandem structure).
According to this second variant, the structure may comprise from the rear face to the front face:
The recombination zone is then formed of the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type (N type) and of the second layer of the first conductivity type (P type). These two layers are in direct contact.
With this PIN-type architecture, it is possible to obtain high currents. In addition, the lower cell is a conventional heterojunction cell and needs no more description.
Alternatively, according to this same second variant, the structure may comprise from the rear face to the front face:
The recombination zone is then formed of the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type (N type) and a layer based on nanocrystalline or microcrystalline silicon of the first conductivity type (P type) which form a tunnel junction. The layer based on nanocrystalline or microcrystalline silicon of the first conductivity type (P type) also serves as a charge extractor in the perovskite cell. There is no need to add a layer of the first conductivity type (P type), such as a layer of PTAA, in the second solar cell. The active layer of the second solar cell is in direct contact with the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type (P type).
With this architecture, the layers based on nanocrystalline or microcrystalline silicon may be deposited in the same equipment as the layers made of amorphous silicon of the lower cell and over large surfaces in a homogeneous manner, which simplifies the manufacturing process and facilitates the obtainment of a homogeneous perovskite layer. High currents may be obtained with this architecture.
Advantageously, the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type and/or the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type is made of μc-Si:H (p+), μc-Si:H (n+), N or P type nc-SiCx or N or P type nc-SiOy with x ranging from 0 to 1 and y ranging from 0 to 2.
By nanocrystalline or microcrystalline, it should be understood a layer including both an amorphous phase and a crystalline phase, the crystalline phase having a grain size smaller than 30 nm. It is generally comprised between 1 and 10 nm for nanocrystalline silicon and generally between 10 and 30 nm and preferably between 10 and 20 nm for microcrystalline. Sometimes, in the literature, for grain sizes smaller than 10 nm, the microcrystalline silicon designation is also found.
Advantageously, the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type and/or the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type has a thickness ranging from 15 nm to 60 nm and preferably from 20 nm to 40 nm.
Advantageously, the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type and/or the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type has a conductivity higher than 10−3 S·cm−1.
Advantageously, the layer based on nanocrystalline or microcrystalline silicon of the first conductivity type and/or the layer based on nanocrystalline or microcrystalline silicon of the second conductivity type has a doping level of 1018/cm3 to 1022/cm3, and preferably between 1019/cm3 and 1020/cm3 for the P type and between 1020/cm3 and 1021/cm3 for the N type.
Other features and advantages of the invention will appear from the following complementary description.
It goes without saying that this complementary description is given only for illustration of the object of the invention and should in no way be interpreted as a limitation of this object.
The present invention will be better understood upon reading the description of embodiments given merely for informative and non-limiting purposes with reference to the appended drawings wherein:
The different portions represented in the figures are not necessarily plotted according to a uniform scale, to make the figures more readable.
Furthermore, in the description hereinafter, terms that depend on the orientation, such as “top”/“upper”, “bottom”/“lower”, etc. of a structure apply while considering that the tandem device and the test structure are oriented as illustrated in the figures.
The face intended to receive the light radiation (represented by arrows in the figures) is called front face.
We will now detail these four different structures in more detail.
First of all, reference is made to the tandem structure 100 represented in
Reference is not made to the tandem structure 100 represented in
In these two structures represented in
Reference is now made to the tandem structure 100 represented in
Reference is not made to the tandem structure 100 represented in
In these two structures represented in
For these different tandem structures 100 disclosed before, the layers of P type (p+) and/or N type (n+) nanocrystalline or microcrystalline silicon may have a thickness ranging from 20 to 40 nm.
In the case of a P-doped layer, the Fermi level is between 4.5 and 5.9 eV.
In the case of an N-doped layer, the Fermi level is between 3.9 and 4.4 eV.
The nanocrystalline or microcrystalline silicon layers are heavily doped. The doping of the layers of (p+ or n+) nanocrystalline or microcrystalline silicon ranges, for example, from 1018 to 1022/cm3.
Preferably, the layers based on nanocrystalline or microcrystalline silicon are made of μc-Si:H (p+), μc-Si:H (n+), N or P type nc-SiCx or N or P type nc-SiOy with x ranging from 0 to 1 and y from 0 to 2.
Advantageously, such layers have a high vertical conductivity, a low vertical resistance (typically lower than 0.5 Ohm·cm2) and/or a lateral conductivity higher than 10−3 S·cm−1.
For example, the p/n type doping levels of the layers 111 and 115 are between 1018 and 1019/cm3.
The silicon substrate 12 of the lower cell may be polished or textured (for example, it may consist of texturing in the form of 2 μm pyramids). The amorphous layers of the lower cell having a thickness of a few nanometres, they will take on the shape of the texturing of the substrate.
The N-type layer 133 of the perovskite cell 130 also called “electron transport layer” (or EIL standing for “Electron Injection Layer” or ETL standing for “Electron Transport Layer”) is, for example, a metal oxide such as zinc oxide (ZnO), aluminium-doped zinc oxide also called AZO (ZnO:Al), titanium oxide (TiO2) or tin oxide (SnO2). It may also consist of a stack of methyl [6,6]-phenyl-C61-butanoate and SnO2 (PCBM/SnO2) or methyl [6,6]-phenyl-C61-butanoate and of bathocuproine (PCBM/BCP).
The P-type layer 132 of the perovskite cell 130 is also called “hole transport layer” (or HTL standing for “Hole Transport Layer”). For example, the P-type layer 132 is an organic compound like Poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS), [poly(bis 4-phenyl}{2,4,6-trimethylphenyl}amine)] (PTAA), [Poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)-benzidine] (Poly-TPD), 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD), N4,N4′-bis(4-(6-((3-ethyloxetan-3-yl)methoxy)hexyl)phenyl)-N4,N4′-diphenyl-[1,1′-biphenyl]-4,4′-diamine (OTPD), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB) or pyrene, or else a metal oxide such as a molybdenum oxide, a vanadium oxide or a tungsten oxide.
The active layer 131 of the perovskite cell 130 comprises at least one perovskite material. The perovskite material has the general formula ABX 3 with A representing one or more monovalent organic cation(s), such as an ammonium, like methylammonium or formamidinium, or a monovalent metal cation, like cesium or rubidium; B representing a divalent metal cation like Pb, Sn, Ag or a mixture thereof; and X representing one or more halide anion(s).
More particularly, the perovskite material may have the particular formula H2NCHNH2PbX3 or CH3NH3PbX3 with X a halogen. For example, it may consist of methylammonium lead iodide CH3NH3PbI3. Preferably, the perovskite material has the formula CsxFA1-xPb(I1-yBry)3.
The tandem device 100 may also comprise:
In this example, a conventional tandem structure and two simplified tandem structures have been selected.
The conventional tandem structure is represented in
The simplified tandem structures 100 are represented in
The following Tables 1 and 2 list the thicknesses of the simulated layers for NIP and PIN-type architectures respectively. The perovskite used in the simulations is of the CsxFA1-xPb(I1-yBry)3 type (with x<0.20; 0<y<1). Two different thicknesses have been used to obtain less current deviation between the two sub-cells when the surface condition is modified. The disclosed results will be with a perovskite that is 250 nm thick when the front face is polished and 415 nm thick when it is textured.
The following Table 1 lists the thicknesses (nm) of the simulated layers for the NIP-type architectures:
The following Table 2 lists the thicknesses (nm) of the simulated layers for the PIN-type architectures:
Optical simulations of these structures have been carried out using the CROWM software, while taking into account the optical indices of the layers, their thickness and the surface condition (completely flat, textured, etc.).
These simulations are performed between 310 and 1,200 nm with the AM1.5 solar spectrum. The optical indices have been extracted by ellipsometry from the experimental layers.
The obtained curves representing the external quantum efficiency (EQE) and the ‘1-Rtot’ value are represented in
This optical simulation study demonstrates that simplified NIP and PIN tandem structures with a junction made of microcrystalline silicon are viable regardless of texturing. Indeed, these simplified structures have only very few differences from an optical perspective with the complete structures and have the same optical potential.
Table 3 lists the values of Jsc and Rtot obtained by optical simulations, and the estimated PCEs for FF=75% and V, =1.8 V for conventional tandem structures (as represented in
The simplified tandem structures represented in
Number | Date | Country | Kind |
---|---|---|---|
2013591 | Dec 2020 | FR | national |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/FR2021/052296 | 12/13/2021 | WO |