Claims
- 1. A solid state electronic device comprising:
- a substrate;
- a first conductive thin film layer deposited on said substrate;
- a thin film nanocrystal layer of organically functionalized metal or metal alloy nanocrystals deposited on and in contact with said first conductive thin layer;
- a dielectric spacer layer in contact with said thin film nanocrystal layer; and
- a second conductive thin film layer deposited on and in contact with said dielectric spacer layer devices exhibiting single-electron behavior.
- 2. The device of claim 1 wherein said substrate comprises a member selected from the group consisting of Si, SiO.sub.2, alumina, mica, GaAs, indium tin oxide, glasses, and polymer films.
- 3. The device of claim 1 wherein said first conductive thin film layer comprises a member selected from the group consisting of aluminum, copper, gold, and silver.
- 4. The device of claim 1 wherein said thin film nanocrystal layer is comprised of a Langmuir-Schaeffer film.
- 5. The device of claim 1 wherein said thin film nanocrystal layer is comprised of a self-assembled thin film.
- 6. The device of claim 1 wherein said this film nanocrystal layer comprises nanocrystals having an average cross-section no larger than about 20 nm.
- 7. The device of claim 1 wherein said thin film nanocrystal layer comprises nanocrystals having an average cross-section ranging from about 1 nm to 10 nm.
- 8. The device of claim 1 wherein said metal nanocrystals comprise a member selected from the group consisting of alkali metals, alkaline earth metals, Group IIIa metals, transition metals, and Group IVa metals.
- 9. The device of claim 1 wherein said metal nanocrystals comprise a member selected from the group consisting of Au, Ag, Co, Sn, Fe, Cu, Ni, Pt, Rh, and Pd, and combinations thereof.
- 10. The device of claim 1 wherein said metal alloy nanocrystals comprise a combination of two or more metals selected from the group consisting of alkali metals, alkaline earth metals, Group IIIa metals, transition metals, and Group IVa metals.
- 11. The device of claim 1 wherein said metal alloy nanocrystals comprise a combination of two or more metals selected from the group consisting of Au, Ag, Co, Sn, Fe, Cu, Ni, Pt, Rh, and Pd.
- 12. The device of claim 1 wherein said thin film nanocrystal layer comprises a nanocrystal matrix composite.
- 13. The device of claim 12 wherein the matrix is a member selected from the group consisting of polymers, glasses, silica, alumina, sol-gels, and glassy carbon.
- 14. The device of claim 12 wherein the matrix comprises a polymer solution.
- 15. The device of claim 14 wherein the polymer is a member selected from the group consisting of polystyrene, polymethylmethacrylate, polyethers, polypropylene, polyethylene, PPV, and conductive polymers.
- 16. The electronic device of claim 13 wherein said polymer solution comprises a solvent selected from the group consisting of alcohols, ketones, ethers, alkanes, alkenes, chloroform, TCE, and dichloromethane.
- 17. The device of claim 1 wherein said dielectric spacer layer has a dielectric constant less than or equal to 10.
- 18. The device of claim 1 wherein said dielectric spacer layer comprises polymer thin films selected from the group consisting of polystyrene, polymethylmethacrylate, polyethers, polypropylene, polyethylene, and PPV.
- 19. The device of claim 1 wherein said second conductive thin film layer comprises a member selected from the group consisting of Al, Cu, Au, and Ag.
- 20. The device of claim 1 wherein the operating range is within the temperature range of 4.degree. K to 330.degree. K.
- 21. The device of claim 1 which functions as a charging device.
- 22. The device of claim 1 which functions as a memory device.
- 23. A solid state nanocrystal memory device exhibiting single-electron behavior manifested by Coulomb Blockade or Coulomb Staircase comprising:
- a source and drain region separated by a semiconductor channel;
- a first insulating layer deposited over said semiconductor channel;
- a thin film nanocrystal layer applied to said first insulating layer, said thin film nanocrystal layer comprising organically functionalized metal or metal alloy nanocrystals;
- a second insulating layer deposited over said nanocrystal layer; and
- a gate electrode applied to said second insulating layer.
Parent Case Info
This application claims the benefit of U.S. Provisional Application No. 60/042,207, filed Mar. 31, 1997.
US Referenced Citations (8)