Claims
- 1. A chip element comprising a sintered ferrite material produced by the process comprising:
- mixing 45 to 52 mol % calculated as Fe.sub.2 O.sub.3 of iron oxide,
- a mixture of 25 to 35 mol % copper oxide and 15 to 25 mol % zinc oxide, calculated as CuO and ZnO, respectively,
- 0.01 to 5.0 mol % calculated as Li.sub.2 O of lithium oxide,
- 0.01 to 0.5 mol % as M(IV)O.sub.2 of an oxide of a tetravalent metal M(IV) wherein M(IV) is at least one element selected from the group consisting of titanium, tin and germanium, and
- sintering the ferrite material at a temperature of up to 950.degree. C.,
- wherein the final composition has a spinel structure, and
- an electrode comprised of Ag.
- 2. A chip element comprising a sintered ferrite material produced by the process comprising:
- mixing 45 to 52 mol % calculated as Fe.sub.2 O.sub.3 of iron oxide,
- a mixture of 10 to 25 mol % nickel oxide, 8 to 20 mol % copper oxide and 10 to 30 mol % zinc oxide, calculated as NiO, CuO, ZnO, respectively,
- 0.01 to 5.0 mol % calculated as Li.sub.2 O of lithium oxide,
- 0.01 to 0.5 mol % as m(IV)O.sub.2 of an oxide of a tetravalent metal M(IV) wherein M(IV) is at least one element selected from the group consisting of titanium, tin and germanium, and
- sintering the ferrite material at a temperature of up to 950.degree. C.,
- wherein the final composition has a spinel structure, and
- an electrode comprised of Ag.
- 3. The chip element of claims 1 or 2, wherein the ferrite material has been sintered at a temperature of from 850.degree. C. to 930.degree. C.
- 4. The chip element of claims 1 or 2 wherein the final sintered ferrite material comprises 0.3-5.0 mol % calculated as Li.sub.2 O of lithium oxide.
- 5. The chip element of claims 1 or 2, wherein in the sintered ferric material M(IV) is titanium and the final composition comprises 0.1-0.5 mol % calculated as M(IV)O.sub.2 of titanium oxide.
- 6. The chip element of claims 1 or 2, wherein said chip is comprised of 1 to 20 layers of said ferrite material, the thickness of each ferrite layer ranging from about 10-50 .mu.m thick and an internal conductor comprised of Ag having a thickness of about 10-25 .mu.m.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-23469 |
Feb 1988 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/305,021, filed on Feb. 2, 1989, now abandoned.
US Referenced Citations (12)
Foreign Referenced Citations (5)
Number |
Date |
Country |
47-35759 |
Apr 1968 |
JPX |
62-29374 |
Jun 1987 |
JPX |
817458 |
Jul 1959 |
GBX |
1071611 |
Jun 1967 |
GBX |
1296718 |
Nov 1972 |
GBX |
Non-Patent Literature Citations (3)
Entry |
Chemical Abstracts, vol. 102, Jun. 1985, p. 687 abstract no. 214030h Fuji Electrochemical Co., Ltd. |
Journal of Materials Science Letters, vol. 6, No. 5, May 1987 pp. 504-506 GB; C. Prakash. |
Chemical Abstracts, vol. 84, No. 12, Mar. 1976 abstract no. 83407w Hitachi Metals Ltd. |
Continuations (1)
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Number |
Date |
Country |
Parent |
305021 |
Feb 1989 |
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