Claims
- 1. A sintered silicon nitride product formed by sintering a mixture consisting essentially of from 60 to 98.9% by weight of silicon nitride, from 0.1 to 15% by weight of one or more chromium components selected from metal chromium, chromium oxide, and chromium nitride, and from 1 to 25% by weight of one or more oxides selected from oxides of rare earth elements, scandium oxide, yttrium oxide, aluminum oxide, zirconium oxide and silicon dioxide.
- 2. A process for fabricating a sintered silicon nitride product comprising blending a mixture consisting essentially of from 60 to 98.9 parts by weight of silicon nitride with from 0.1 to 15 parts by weight of one or more chromium components selected from metallic chromium, chromium oxide, and chromium nitride, and from 1 to 25 parts by weight of one or more oxides selected from oxides of rare earth elements, scandium oxide, yttrium oxide, aluminum oxide, zirconium oxide and silicon dioxide, molding the resulting mixture, and sintering in a nonoxidizing atmosphere.
- 3. A process for fabricating a sintered silicon nitride product comprising blending a mixture consisting essentially of metallic silicon which is to be converted to silicon nitride after nitridation in an amount corresponding to from 60 to 98.9 parts by weight of silicon nitride with from 0.1 to 15% by weight of one or more chromium components selected from metallic chromium, chromium oxide, and chromium nitride, and from 1 to 25% by weight of one or more oxides selected from oxides of rare earth elements, scandium oxide, yttrium oxide, aluminum oxide, zirconium oxide and silicon dioxide, molding the resulting mixture, carrying out reaction sintering in a nitrogen atmosphere, and sintering thereafter in a nonoxidizing atmosphere.
- 4. The process of claim 2 wherein molding of the mixture is performed at a pressure of about 2,000 kg/cm.sup.2.
- 5. The process of claim 2 wherein sintering is performed at a temperature of from 1,600.degree. C. to 2,200.degree. C. and a pressure of at least 1 atmosphere.
- 6. The process of claim 5 wherein sintering is performed at a pressure of from 1 to 3,000 atmospheres.
- 7. The process of claim 2 wherein the silicon nitride contains 50 percent or more of silicon nitride in the .alpha.-phase.
- 8. The process of claim 2 wherein the silicon nitride has a particle size of 10 microns or less.
- 9. The process of claim 3 wherein reaction sintering is carried out at from 1,200.degree. C. to 1,500.degree. C.
- 10. The process of claim 3 wherein the reaction sintered product is further sintered at a temperature of from 1,600.degree. C. to 2,200.degree. C. at a pressure of from 1 to 3000 atmospheres.
- 11. The process of claim 3 wherein molding of the mixture is performed at a pressure of about 2,000 kg/cm.sup.2.
- 12. The process of claim 3 wherein the silicon nitride contains 50 percent or more of silicon nitride in the .alpha.-phase.
- 13. The process of claim 3 wherein the silicon nitride has a particle size of 10 microns or less.
- 14. The process of claim 2 wherein sintering is pressureless sintering carried out at a temperature of from 1,600.degree. C. to 1,900.degree. C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
56-155452 |
Sep 1981 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 428,506, filed Sept. 29, 1982, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3409417 |
Yates |
Nov 1968 |
|
3950464 |
Masaki et al. |
Apr 1976 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
428506 |
Sep 1982 |
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