Claims
- 1. A method of making silicon nitride articles, comprising:
- (a) dissolving polysilane in a solvent and adding a silicon nitride composition to form a homogeneous mixture, said silicon nitride composition comprising silicon nitride and at least one densification aid selected from the group consisting of aluminum oxide and yttrium oxide;
- (b) evaporating the solvent from the homogeneous mixture to form a powder;
- (c) molding the powder at a temperature less than 100.degree. C. to form a molded article;
- (d) heating the molded article at a rate of approximately 5.degree. C./min to a temperature of about 900.degree. C. in a nonoxidizing atmosphere and holding the temperature at about 900.degree. C. for a time sufficient to decompose the poloysilane;
- (e) sintering the molded article in a nonoxidizing atmosphere at a temperature of about 1685.degree. C. to about 1900.degree. C. to form a densified silicon nitride article free of internal cracks and having a density greater than 3.05 g/cc.
- 2. The method according to claim 1 wherein the molding of the powder comprises isostatic pressing at room temperature.
- 3. The method according to claim 1 wherein said homogeneous mixture comprises from about 10 w/o to about 40 w/o polysilane.
- 4. The method according to claim 1 wherein the solvent is toluene.
- 5. A method of making silicon nitride articles by slip isostatic pressing, said method comprising:
- (a) dissolving polysilane in a solvent and adding a silicon nitride composition to form a homogeneous mixture, said silicon nitride composition comprising silicon nitride and at least one densification aid selected from the group consisting of aluminum oxide and yttrium oxide;
- (b) pouring the mixture into a mold and vacuum filtering the mixture to remove the solvent to form a cake;
- (c) isostatically pressing the cake at a temperature of approximately 90.degree. C.
- (d) heating the pressed cake at a rate of approximately 5.degree. C./min to a temperature of about 900.degree. C. in a nonoxidizing atmosphere and holding the temperature at about 900.degree. C. for a time sufficient to decompose the poloysilane;
- (e) sintering the pressed cake in a nonoxidizing atmosphere at a temperature of about 1685.degree. C. to about 1900.degree. C. to form a densified silicon nitride article free of internal cracks and having a density greater than 3.05 g/cc.
- 6. The method according to claim 5 wherein said homogeneous mixture comprise from about 20 w/o to about 40 w/o polysilane.
- 7. The method according to claim 5 wherein the solvent is toluene.
- 8. A method of making silicon nitride articles, comprising:
- (a) dissolving polysilane in a solvent and adding a silicon nitride composition to form a homogeneous mixture, said silicon nitride composition comprising silicon nitride and at least one densification aid selected from the group consisting of aluminum oxide and yttrium oxide;
- (b) evaporating the solvent from the homogeneous mixture to form a powder;
- (c) molding the powder at a temperature less than 100.degree. C. to form a molded article;
- (d) embedding the molded article in a setter powder comprising the silicon nitride composition;
- (e) heating the embedded article at a rate of approximately 5.degree. C./min to a temperature of about 900.degree. C. in a nonoxidizing atmosphere and holding the temperature at about 900.degree. C. for a time sufficient to decompose the poloysilane;
- (f) sintering the heated article in a nonoxidizing atmosphere at a temperature of about 1685.degree. C. to about 1900.degree. C. to form a densified silicon nitride article free of internal cracks and having a density greater than 3.05 g/cc.
Parent Case Info
This is a continuation of copending application Ser. No. 07/675,601 filed on Feb. 12, 1991, now abandoned, which is a continuation of application Ser. No. 07/494,891 filed on Mar. 12, 1990 and now abandoned, which is a continuation of application Ser. No. 07/092,270 filed on Aug. 31, 1987 and now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (3)
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Date |
Country |
3605126A1 |
Aug 1986 |
DEX |
2-5575968A |
Jun 1990 |
JPX |
WO800021A1 |
Jan 1980 |
WOX |
Non-Patent Literature Citations (2)
Entry |
B. C. Mutsuddy, Use of Organometallic Polymer for Making Ceramic Parts by Plastic Forming Techniques, Cer. Intl. 13 (1987) 41-53. |
K. B. Schwartz, D. J. Rowcliffe, and Y. D. Blum, Microstructural Development in Si.sub.3 N.sub.4 /Polysilazane Bodies During Heating. |
Continuations (3)
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657601 |
Feb 1991 |
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494891 |
Mar 1990 |
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92270 |
Aug 1987 |
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