The present invention relates to a light emitting diode (LED) microcontroller. More particularly, embodiments of the present invention relate to an LED microcontroller for use in display or lighting applications.
Flat panel displays utilizing LED devices are gaining popularity in a wide range of electronic devices, from small, handheld electronic devices to large outdoor displays. High-resolution LED displays, such as those used in modern computer displays, smart phones and televisions, typically use an active matrix display structure. In an active matrix display, active driving circuitry is attached to each pixel or sub-pixel, allowing precise voltage switching for the individual pixels that passive matrix displays lack. The precise voltage switching allows for improved image quality and response time in comparison to passive matrix displays. In conventional active matrix displays, the switching circuitry at each pixel is implemented using a thin-film transistor (TFT) backplane driving the emissive elements. A typical TFT switching circuit used in emissive active matrix displays is the 2T1C circuit, which contains two transistors and one capacitor, although more advanced TFT circuits is possible.
The use of the TFT backplane allows improved precision in relation to passive matrix displays, however the use of the thin-film transistor backplane is not without drawbacks. High quality TFT fabrication is costly. The highest quality TFTs require fabrication on a quartz substrate due to the high temperatures involved in the fabrication process. Lower temperature processes can be used with a glass substrate, however the resulting transistors may suffer from low carrier mobility, reducing the conductivity of the transistors. Current leakage and power consumption can also become a problem, and uniformity issues can arise at various points during the fabrication process.
A smart-pixel microcontroller for controlling light emitting diodes is described. The smart-pixel microcontroller can be used to replace the TFT backplane used in LED and LCD display technology, and can add new functionality not previously possible using thin film transistors as switching and driving element in a display. In an embodiment a light emitting assembly includes one or more light emitting diode (LED) devices and one ore more microcontroller to switch and drive the one or more LED devices. The one ore more LED devices and the one or more microcontrollers are bonded to the same side of a substrate. In an embodiment, an LED device and microcontroller are bonded to the substrate with a material such as indium, gold, silver, copper, or alloys thereof.
In one embodiment, the smart-pixel integrated circuit is configured for analog input, and has an input block and an output block containing electronics. In such embodiment, the smart-pixel microcontroller is controlled with a voltage applied to scan lines and a data lines, similar to an active matrix display. In analog form, the smart-pixel microcontroller can accept at least one analog data input to control at least one LED device, although multiple LED devices can be controlled with a single microcontroller. In one embodiment, the smart-pixel microcontroller supplements analog circuitry with digital storage to facilitate adaptive refresh rates and display self refresh. In one embodiment, capacitive storage is used to storage analog input.
In one embodiment, the smart-pixel microcontroller is configured for digital input, and has an input block and output block containing digital logic, and a storage module with embedded memory. Digital input can come by way of a digital bus or point-to-point data link. Multiple LED devices or sensor devices can be controlled with a single microcontroller. In one embodiment, adaptive display updates are facilitated by data storage in each integrated circuit.
In one embodiment, a plurality of LED devices are bonded to the same side of the substrate as the microcontroller, and are in electrical connection with the microcontroller. The LED devices can be used as sub-pixels in a display, and can be configured in a red, green, blue (RGB) sub-pixel arrangement. Other sub-pixel arrangements and schemes are also possible. In an embodiment, the light emitting assembly includes an array of LED devices and an array of microcontrollers bonded to the same side of the substrate. The number of microcontrollers in the array of microcontrollers is less than the number of LED devices in the array of LED devices. In an embodiment, each microcontroller is in electrical connection with a plurality of pixels to drive a plurality of LED devices in each pixel.
In addition to the controlling the emissive elements of the display, the microcontroller can couple with one or more optical, electrical or thermal sensors. Alternatively the microcontroller may include one or more sensors. In one embodiment, the smart-pixel microcontroller couples with one or more pressure sensors, which can be used to give visual display feedback on a display when the display is touched, or to transmit user input in a touch display. In one embodiment, sensors can be used to detect a drift in the white point of the display over time, and the display can be re-calibrated from time to time to maintain a consistent white point.
One embodiment of a method of manufacturing a display or lighting device using a receiving substrate, one or more transfer heads, and one or more carrier substrates is also disclosed. The lighting or display device can be manufactured by placing a micro scale sub-pixel array on a receiving substrate, where the receiving substrate is prepared with distribution lines to couple the components of the micro scale sub-pixel array. In an embodiment, a method of manufacturing a light emitting assembly includes positioning an array of transfer heads over a substrate carrying a plurality of LED devices, picking up the plurality of LED devices, and placing the plurality of LED devices on a receiving substrate. This process may be repeated for a separate substrate carrying other plurality of LED devices, for example, with different light emission characteristics. The same or different array of transfer heads may be used. The same or different array of transfer heads are then positioned over a substrate carrying a plurality of microcontrollers, pick up the plurality of microcontrollers, and place the microcontrollers on the same side of the receiving substrate as the plurality of LED devices. In accordance with embodiments of the invention the arrays of transfer heads may operate in accordance with electrostatic principles. The plurality of LED devices and microcontrollers may also be bonded to the receiving substrate. In an embodiment, bonding is achieved by heating the plurality of LED devices and plurality of microcontrollers with the respective array of transfer heads. Bonding may also be achieved by thermocompression bonding with the array of transfer heads. Additionally one or more sensor devices can also be placed on the receiving substrate using an electrostatic transfer head.
The above summary does not include an exhaustive list of all aspects to be discussed. It is contemplated that what is detailed below includes all systems and methods that can be practiced from all suitable combinations of the various aspects summarized above.
Embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which:
Embodiments of the present invention provide a “smart-pixel” microcontroller for light emitting devices. The smart-pixel microcontroller utilizes the performance, efficiency, and reliability of wafer-based microcontroller devices to replace the thin film electronics used to form TFT backplanes. In one embodiment, one or more light-emitting devices are coupled with the smart-pixel microcontroller to create a smart-pixel light-emitting device. The emissive element of the smart-pixel light-emitting device can be one or more light emitting diodes (LED) devices, one or more organic LED (OLED) devices, or one or more micro-LED (μLED) devices. The absence of the TFT fabrication process allows the smart-pixel “micro-matrix” to be manufactured using a range of substrates, including rigid, semi-rigid, or flexible substrates, glass substrates, plastic substrates, or any application suitable substrate, as the substrate does not have to undergo a TFT fabrication process.
The smart-pixel device can be created by transferring one or more LED devices, and one or more smart-pixel microcontrollers onto a receiving substrate, which has been prepared with distribution lines to couple each smart-pixel microcontroller to its respective LED devices, other smart pixel controllers, and/or external devices and circuits. The smart-pixel device can also include one or more sensors in addition to, or in place of one or more LED devices. The micro controller (μC), LED devices, and sensor devices are bonded to the same side of the substrate surface. Bonds can be made using various connections such as, but not limited to, pins, conductive pads, conductive bumps, and conductive balls. Metals, metal alloys, solders, conductive polymers, or conductive oxides can be used as the conductive materials forming the pins, pads, bumps, or balls. In an embodiment, conductive contacts on the μC, LED devices, or optional sensor devices are thermocompression bonded to conductive pads on the substrate. In this manner, the bonds may function as electrical connections to the μC, LED devices, or sensor devices. In an embodiment, bonding includes alloy bonding the conductive contacts with the conductive pads. For example, the conductive contacts or conductive pads may include a material such as indium, gold, silver, tin, or copper for bonding. In an embodiment, when bonded together, the conductive contacts and conductive pads form an alloy such as indium-gold, tin-gold, tin-silver-copper. Other exemplary bonding methods that may be utilized with embodiments of the invention include, but are not limited to, thermal bonding and thermosonic bonding. In an embodiment, the μC, LED devices, or sensor devices are bonded to landing pads in electrical connection with the distribution lines on the substrate to electrically couple one or more LED devices to the smart-pixel μC. The receiving substrate can vary based on the application of the smart-pixel micro-matrix. In one embodiment, a display substrate is used, to form a smart-pixel micro-matrix LED display device, in which the smart-pixels are used as picture elements in a high-resolution display.
In one embodiment, the smart-pixel micro-matrix is constructed on a receiving substrate suitable for use in lighting devices. The smart-pixel microcontrollers can be used to maintain precise brightness, uniformity, and color control over the emitted light. In one embodiment, the smart-pixel micro-matrix is used as an LED backlight, for liquid crystal display (LCD) devices. Blue or UV LEDs in combination with a yellow, blue-yellow or white phosphor can be used to provide a white backlight for LCD displays. White light can also be generated by various combinations of single color LED devices with or without the use of phosphors. In addition to white lighting, additional single color LED devices (e.g., red, amber, green, blue, etc.) devices can also be used to provide a wider color gamut and color rendering index than otherwise possible with white backlights.
One or more smart-pixel microcontrollers may also couple to form a microcontroller network. A hierarchy of microcontrollers can be used, where a tiered arrangement exists between microcontrollers. Multiple types of microcontrollers can be used for various applications, and the microcontrollers can each be tied to a common data bus, coupled in a daisy chain, or may communicate wirelessly. The microcontroller network can enable fault tolerance, and can be used to determine the state of the smart-pixel micro-matrix.
In one embodiment, two-way communication is enabled between the smart-pixel microcontrollers and other devices in the smart-pixel micro-matrix. One or more sensors can couple with the smart-pixel microcontroller along with the emissive elements. The sensors can be ambient light sensors, optical sensors, electrical sensors, or thermal sensors. In one embodiment, a pressure sensor is used, for example to give visual display feedback on a display when the display is touched, or to transmit user input in a touch display. In a smart-pixel micro-matrix display, sensors can be used to detect a drift in the white point of the display over time, and the display can be re-calibrated from time to time to maintain a consistent white point.
In one embodiment, a smart-pixel element is a micro scale device created by the coupling of a micro scale sub-pixel controller (μC) device with a micro LED (μLED) device. The term “micro” in “micro scale, “micro LED device,” “μLED device,” “μC device” and “micro scale pixel controller” all refer to the scale of 1 to 100 μm. For example, each μLED or each μC device may have a maximum (x, y) dimension of 1 to 100 μm. However, it is to be appreciated that the embodiments described herein may be applicable to larger, and possibly smaller size scales, based on the application. In one embodiment micro scale sensor devices are used, along with μLED devices. Exemplary μLED devices and microchips that may be utilized as micro-scale microcontroller devices in accordance with some embodiments are described in U.S. patent application Ser. No. 13/711,554. Though embodiments are not limited to such, and the μLED devices and microchips described in U.S. patent application Ser. No. 13/711,554 are meant to be exemplary and not limiting. Such micro LED devices are highly efficient at light emission and may consume very little power (e.g., 250 mW for a 10 inch display) compared to 5-10 watts for LCD or OLED emission. In one embodiment, a smart-pixel is created using an OLED as the emissive component. In one embodiment, an inorganic LED is used as the emissive component of the smart-pixel. It should be appreciated, however, the smart-pixel micro scale microcontroller can also couple with standard LEDs, and applications are not limited specifically to micro scale LEDs. In some embodiments the size of the μLED devices and a μC within a smart-pixel is determined by the size of the pixel pitch and resolution of a display. Exemplary display dimensions are described in Table 1 below.
Various methods and configurations of the smart-pixel device are described, including display, lighting, and backlighting configurations in various size scales. However, certain embodiments may be practiced without one or more of the specific details disclosed, or in combination with other known methods and configurations. In order to provide a thorough understanding, numerous specific details are set forth, such as specific configurations, dimensions and processes. In some instances, well-known techniques and components have not been described in particular detail, to avoid unnecessarily obscuring the discussion.
Throughout this specification, a reference to “one embodiment,” “an embodiment” or the like, indicates that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in one embodiment,” “in an embodiment” or the like in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.
The terms “over,” “to,” “between,” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over,” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
The term “ON” as used in this specification in connection with a device state refers to an activated state of the device, and the term “OFF” refers to a de-activated state of the device. The term “ON” as used herein in connection with a signal received by a device refers to a signal that activates the device, and the term “OFF” used in this connection refers to a signal that de-activates the device. A device may be activated by a high voltage or a low voltage, depending on the underlying electronics implementing the device. For example, a PMOS transistor device is activated by a low voltage while a NMOS transistor device is activated by a high voltage. Thus, it should be understood that an “ON” voltage for a PMOS transistor device and a NMOS transistor device correspond to opposite (low vs. high) voltage levels. It is also to be understood that where Vdd and Vss is illustrated or described, it can also indicate one or more Vdd and/or Vss. For example, a digital Vdd for can be used for data input, digital logic, memory devices, etc, while another Vdd is used for driving the LED output block.
In one embodiment, the μC device 110 couples with one or more red, green, and blue LED devices 115 that emit different colors of light. In a red-green-blue (RGB) sub-pixel arrangement, each pixel includes three sub-pixels that emit red, green and blue lights, respectively. The RGB arrangement is exemplary and that embodiments are not so limited. Additional sub-pixel arrangements include, red-green-blue-yellow (RGBY), red-green-blue-yellow-cyan (RGBYC), or red-green-blue-white (RGBW), or other sub-pixel matrix schemes where the pixels may have a different number of sub-pixels, such as the displays manufactured under the trademark name PenTile®.
In one embodiment, the smart-pixel micro-matrix is used in LED lighting solutions, or as an LED backlight for an LCD device. When used as a light source, blue or UV LEDs in combination with a yellow or blue-yellow phosphor may be used to provide a white backlight for LCD displays. In one embodiment, a smart-pixel micro-matrix using one or more blue LED devices, such as an indium gallium nitride (InGaN) LED device, is combined with the yellow luminescence from cerium doped yttrium aluminum garnet (YAG:Ce3+) phosphor. In one embodiment, red, green, and blue phosphors are combined with a near-ultraviolet/ultraviolet (nUV/UV) InGaN LED device to produce white light. The phosphor can be bonded to the surface of the LED device, or a remote phosphor can be used. In addition to white light emission, additional red, green and/or blue LED device can also be used to provide a wider color gamut than otherwise possible with white backlights.
In one embodiment, the output block 225 is configured to output current to the various emissive devices coupled to the μC 110. In configurations using traditional analog driving techniques, the input voltage signal from the input data lines are converted to the appropriate current to drive each of the coupled sub-pixels. For example, a voltage input to Vdata(1) can drive the LED1 output in an LED lighting device. If the μC 110 input module has multiple inputs, such as Vdata(1) through Vdata(n), the output block 225 can output up to n control lines from LED1 through LEDn. One or more LEDs in series, parallel or a combination, can couple to the one or more LED outputs.
In one embodiment, the smart-pixel μC 110 has a data storage module 220, to store data values when input is received. The data storage module 220, which may be an analog or digital storage module, stores the data associated with each display update. In one embodiment, the data storage module 220 contains one or more capacitors to store an incoming analog voltage from an analog input block. In one embodiment, the data storage module 220 contains at least one cell of random access memory (RAM), such as static RAM (SRAM) or dynamic RAM (DRAM), to store a digital value. In one embodiment, the data storage module 220 contains flash memory. When the data storage module 220 is enabled, the smart-pixel μC 110 stores the incoming data for each pixel and can continuously display data with minimal or no requirement for regular refreshing of static data. Instead, the pixel can continue to display the stored data until the display controller indicates an update event. Additionally, multiple frames of pixel data can be transmitted to the smart-pixel μC 110 in a burst manner and stored in the storage module 220. The smart-pixel μC 110 can then cycle through the multiple frames at a specific update rate, or based upon an update signal from the display controller.
In one embodiment, the data storage module 320 buffers input received by the input block 315 for subsequent use by the output block 325. The data storage module 320 can contain memory, such as DRAM, SRAM, or flash memory, to buffer input data between refresh cycles. In one embodiment, all input data for a display frame is sent as a burst message individually to each smart-pixel μC 310, which store the pixel or sub-pixel information for the attached LEDs. The output module 325 can read the stored data and drive the attached LEDs at a standard update rate, or a content dependent update rate.
Some smart-pixel μC variants configured for sensor input can also control LED devices. In one embodiment, the smart-pixel μC 1310 has an input block 1315, data storage module 1320 and an output block 1325. In one embodiment, the smart-pixel μC 1310 has a digital input 305, similar to the digital input of smart-pixel μC 310 as shown in
Bonds can be made using various connections such as, but not limited to, pins, conductive pads, conductive bumps, and conductive balls. Metals, metal alloys, solders, conductive polymers, or conductive oxides can be used as the conductive materials forming the pins, pads, bumps, or balls. In an embodiment, heat and/or pressure can be transferred from the array of transfer heads to facilitate bonding. In an embodiment, conductive contacts on the μC, LED devices, or optional sensor devices are thermocompression bonded to conductive pads on the substrate. In this manner, the bonds may function as electrical connections to the μC, LED devices, or sensor devices. In an embodiment, bonding includes indium alloy bonding or gold alloy bonding the conductive contacts with the conductive pads. Other exemplary bonding methods that may be utilized with embodiments of the invention include, but are not limited to, thermal bonding and thermosonic bonding. In an embodiment, the μC, LED devices, or sensor devices are bonded to landing pads in electrical connection with the distribution lines on the substrate to electrically couple one or more LED devices to the smart-pixel μC. The receiving substrate can vary based on the application of the smart-pixel micro-matrix. In one embodiment, a display substrate is used, to form a smart-pixel micro-matrix LED display device, in which the smart-pixels are used as picture elements in a high-resolution display.
An optional sealant 1740 can be used to secure and protect the substrate. In one embodiment, the sealant is transparent, to allow a display or lighting substrate with top emission LED devices to display through the sealant. In one embedment, the sealant is opaque, for use with bottom emission LED devices. In one embodiment, a data driver 1710 and a scan driver 1720 couple with multiple data and scan lines on the display substrate. In one embodiment, each of the smart-pixel devices couple with a refresh and timing controller 1724. The refresh and timing controller 1724 can address each LED device individually, to enable asynchronous or adaptively synchronous display updates. In one embodiment, a brightness controller 1726 can couple with the micro-matrix substrate 1735 used to control the brightness of an LED micro-matrix LED lighting device, which can also be used as a backlight in an LCD. The brightness controller 1726 can also couple with one or more optical sensors to allow adaptive adjustment of the light output. In one embodiment, one or more thermal sensors enable a smart-pixel based LED light source to automatically manage thermal output.
Table 1 provides a list of exemplary implementations in accordance with the various embodiments that use red-green-blue (RGB) displays with 1920×1080p and 2560×1600 resolutions. It is to be appreciated that embodiments of the invention are not limited to RGB color schemes or the 1920×1080p or 2560×1600 resolutions, and that the specific resolution and RGB color scheme is for illustrational purposes only.
In the above exemplary embodiments, the 40 PPI pixel density may correspond to a 55 inch 1920×1080p resolution television, and the 326 and 440 PPI pixel density may correspond to a handheld device with retina display. In accordance with embodiments of the invention, the maximum (x,y) dimension of the p LED devices and the μC for a smart-pixel 120 fit within the allotted pixel pitch, such as the exemplary allotted pixel pitches described above with regard to Table 1. For example, in one embodiment a 5″ RGB display with 440 PPI may include a red-emitting μLED device, green-emitting μLED device, and blue-emitting μLED device, each with maximum (x, y) dimension that fits within the corresponding (19 μm, 58 μm) sub-pixel pitch, and a μC device that fits within the (58 μm, 58 μm) pixel pitch. For example, in one embodiment a 55″ RGB display with 40 PPI may include a red-emitting μLED device, green-emitting μLED device, and blue-emitting μLED device, each with maximum (x, y) dimension that fits within the corresponding (211 μm, 634 μm) sub-pixel pitch, and a μC device that fits within the (634 μm, 634 μm) pixel pitch.
In utilizing the various aspects of this invention, it would become apparent to one skilled in the art that combinations or variations of the above smart-pixel embodiments are possible. Although the present invention has been described in language specific to structural features and/or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. The specific features and acts disclosed are instead to be understood as particularly graceful implementations of the claimed invention useful for illustrating the present invention.
This application is a continuation of co-pending U.S. patent application Ser. No. 17/063,371, filed Oct. 5, 2020, which is a continuation of U.S. patent application Ser. No. 16/512,286, filed Jul. 15, 2019, now U.S. Pat. No. 10,796,648, which is a continuation of U.S. patent application Ser. No. 15/908,499, filed Feb. 28, 2018, now U.S. Pat. No. 10,380,952, which is a continuation of U.S. patent application Ser. No. 15/479,962, filed Apr. 5, 2017, now U.S. Pat. No. 9,959,815, which is a continuation of U.S. patent application Ser. No. 14/830,486, filed Aug. 19, 2015, now U.S. Pat. No. 9,626,908, which is a continuation of U.S. patent application Ser. No. 13/717,634, filed on Dec. 17, 2012, now U.S. Pat. No. 9,153,171, which is incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
4618814 | Kato et al. | Oct 1986 | A |
4997196 | Wood | Mar 1991 | A |
5592358 | Shamouilian et al. | Jan 1997 | A |
5767822 | Hiroshi | Jun 1998 | A |
5839187 | Sato et al. | Nov 1998 | A |
5851664 | Bennett et al. | Dec 1998 | A |
5888847 | Rostoker et al. | Mar 1999 | A |
5903428 | Grimard et al. | May 1999 | A |
5996218 | Shamouilian et al. | Dec 1999 | A |
6014120 | Chiu et al. | Jan 2000 | A |
6071795 | Cheung et al. | Jun 2000 | A |
6335263 | Cheung et al. | Jan 2002 | B1 |
6403985 | Fan et al. | Jun 2002 | B1 |
6420242 | Cheung et al. | Jul 2002 | B1 |
6521511 | Inoue et al. | Feb 2003 | B1 |
6558109 | Gibbel | May 2003 | B2 |
6582980 | Feldman et al. | Jun 2003 | B2 |
6613610 | Iwafuchi et al. | Sep 2003 | B2 |
6629553 | Odashima et al. | Oct 2003 | B2 |
6670038 | Sun et al. | Dec 2003 | B2 |
6683587 | Gulson | Jan 2004 | B2 |
6786390 | Yang et al. | Sep 2004 | B2 |
6788109 | Kitagawa | Sep 2004 | B2 |
6878607 | Inoue et al. | Apr 2005 | B2 |
7015825 | Callahan | Mar 2006 | B2 |
7033842 | Haji et al. | Apr 2006 | B2 |
7079205 | Kuji | Jul 2006 | B2 |
7148127 | Oohata et al. | Dec 2006 | B2 |
7208337 | Eisert et al. | Apr 2007 | B2 |
7353596 | Shida et al. | Apr 2008 | B2 |
7358158 | Aihara et al. | Apr 2008 | B2 |
7502950 | Brands | Mar 2009 | B1 |
7585703 | Matsumura et al. | Sep 2009 | B2 |
7622367 | Nuzzo et al. | Nov 2009 | B1 |
7723764 | Oohata et al. | May 2010 | B2 |
7795629 | Watanabe et al. | Sep 2010 | B2 |
7797820 | Shida et al. | Sep 2010 | B2 |
7838410 | Hirao et al. | Nov 2010 | B2 |
7880184 | Iwafuchi et al. | Feb 2011 | B2 |
7884543 | Doi | Feb 2011 | B2 |
7888690 | Iwafuchi et al. | Feb 2011 | B2 |
7906787 | Kang | Mar 2011 | B2 |
7910945 | Donofrio et al. | Mar 2011 | B2 |
7927976 | Menard | Apr 2011 | B2 |
7928465 | Lee et al. | Apr 2011 | B2 |
7972875 | Rogers et al. | Jul 2011 | B2 |
7982296 | Nuzzo et al. | Jul 2011 | B2 |
7988332 | Lo | Aug 2011 | B2 |
7999454 | Winters et al. | Aug 2011 | B2 |
8023248 | Yonekura et al. | Sep 2011 | B2 |
8328405 | Negley | Dec 2012 | B2 |
8344629 | Deixier | Jan 2013 | B2 |
8344639 | Bahrehmand | Jan 2013 | B1 |
8378781 | Peterson | Feb 2013 | B1 |
8395312 | Hum | Mar 2013 | B2 |
8440546 | Nuzzo et al. | May 2013 | B2 |
8476844 | Hancock et al. | Jul 2013 | B2 |
8506867 | Menard | Aug 2013 | B2 |
8664699 | Nuzzo et al. | Mar 2014 | B2 |
8680889 | Leshniak | Mar 2014 | B2 |
8789971 | Lo et al. | Jul 2014 | B2 |
8865489 | Rogers et al. | Oct 2014 | B2 |
8877648 | Bower et al. | Nov 2014 | B2 |
8889485 | Bower | Nov 2014 | B2 |
8896218 | Bora et al. | Nov 2014 | B2 |
8934259 | Bower et al. | Jan 2015 | B2 |
9113526 | Stewart | Aug 2015 | B2 |
9153171 | Sakariya et al. | Oct 2015 | B2 |
9218759 | Wong et al. | Dec 2015 | B2 |
9391118 | Negley et al. | Jul 2016 | B2 |
9480108 | Pi | Oct 2016 | B2 |
9626908 | Sakariya et al. | Apr 2017 | B2 |
9959815 | Sakariya et al. | May 2018 | B2 |
10380952 | Sakariya et al. | Aug 2019 | B2 |
10796648 | Sakariya et al. | Oct 2020 | B2 |
11837179 | Sakariya et al. | Dec 2023 | B2 |
20010029088 | Odajima et al. | Oct 2001 | A1 |
20020064032 | Oohata | May 2002 | A1 |
20020076848 | Spooner et al. | Jun 2002 | A1 |
20030117344 | Hine et al. | Jun 2003 | A1 |
20030177633 | Haji et al. | Sep 2003 | A1 |
20030197664 | Koyama | Oct 2003 | A1 |
20040032637 | Imamura | Feb 2004 | A1 |
20050017268 | Tsukamoto et al. | Jan 2005 | A1 |
20050078115 | Buchmeier et al. | Apr 2005 | A1 |
20050134526 | Willem et al. | Jun 2005 | A1 |
20050146530 | Zerphy et al. | Jul 2005 | A1 |
20050185113 | Weindorf et al. | Aug 2005 | A1 |
20060256049 | Schou | Nov 2006 | A1 |
20070019129 | Negley | Jan 2007 | A1 |
20070166851 | Tran et al. | Jul 2007 | A1 |
20080163481 | Shida et al. | Jul 2008 | A1 |
20090068774 | Slater et al. | Mar 2009 | A1 |
20090146917 | Kharrati et al. | Jun 2009 | A1 |
20090167644 | White et al. | Jul 2009 | A1 |
20090314991 | Cho et al. | Dec 2009 | A1 |
20100141646 | Tanabe | Jun 2010 | A1 |
20100177127 | Akiyama et al. | Jul 2010 | A1 |
20100188391 | Kim | Jul 2010 | A1 |
20100188794 | Park et al. | Jul 2010 | A1 |
20100219758 | Melzner et al. | Sep 2010 | A1 |
20100244695 | Van Herpen et al. | Sep 2010 | A1 |
20100244734 | Van Herpen et al. | Sep 2010 | A1 |
20100248484 | Bower et al. | Sep 2010 | A1 |
20100309100 | Cok et al. | Dec 2010 | A1 |
20110003410 | Tsay et al. | Jan 2011 | A1 |
20110063333 | Chiou et al. | Mar 2011 | A1 |
20110069094 | Knapp | Mar 2011 | A1 |
20110069096 | Li et al. | Mar 2011 | A1 |
20110141004 | Kwon et al. | Jun 2011 | A1 |
20110279014 | Winters et al. | Nov 2011 | A1 |
20120009691 | Chung | Jan 2012 | A1 |
20120018494 | Jang et al. | Jan 2012 | A1 |
20120064642 | Huang et al. | Mar 2012 | A1 |
20120068600 | Hartmann et al. | Mar 2012 | A1 |
20120134065 | Furuya et al. | May 2012 | A1 |
20120218318 | Hirao et al. | Aug 2012 | A1 |
20120250323 | Velu | Oct 2012 | A1 |
20120256814 | Ootorii | Oct 2012 | A1 |
20120326634 | Li | Dec 2012 | A1 |
20130154490 | Harbers | Jun 2013 | A1 |
20140132154 | Fried | May 2014 | A1 |
20140168037 | Sakariya et al. | Jun 2014 | A1 |
20140175988 | Plourde et al. | Jun 2014 | A1 |
20140373898 | Rogers et al. | Dec 2014 | A1 |
20150356918 | Sakariya et al. | Dec 2015 | A1 |
20170206845 | Sakariya et al. | Jul 2017 | A1 |
20180190211 | Sakariya et al. | Jul 2018 | A1 |
20200005720 | Sakariya et al. | Jan 2020 | A1 |
20210020122 | Sakariya et al. | Jan 2021 | A1 |
Number | Date | Country |
---|---|---|
2012241114 | Nov 2012 | AU |
101025893 | Aug 2007 | CN |
101329837 | Dec 2008 | CN |
101730333 | Jun 2010 | CN |
102239745 | Nov 2011 | CN |
102338342 | Feb 2012 | CN |
102346095 | Feb 2012 | CN |
102356424 | Feb 2012 | CN |
102395829 | Mar 2012 | CN |
1227468 | Jul 2002 | EP |
1694099 | Aug 2006 | EP |
3406207 | May 1999 | JP |
2005003696 | Jan 2005 | JP |
2006190851 | Jul 2006 | JP |
2007335731 | Dec 2007 | JP |
2010161264 | Jul 2010 | JP |
2011507032 | Mar 2011 | JP |
1019960015353 | Jun 2000 | KR |
20080049515 | Jun 2008 | KR |
1020090119862 | Nov 2009 | KR |
20110030780 | Mar 2011 | KR |
20120067250 | Jun 2012 | KR |
1020130013508 | Feb 2013 | KR |
200822697 | May 2008 | TW |
03023745 | Mar 2003 | WO |
2008007535 | Jan 2008 | WO |
2008029548 | Mar 2008 | WO |
2011123285 | Oct 2011 | WO |
2012044262 | Apr 2012 | WO |
2012108890 | Aug 2012 | WO |
2014099499 | Jun 2014 | WO |
Entry |
---|
Asano, Kazutoshi, et al., “Fundamental Study of an Electrostatic Chuck for Silicon Wafer Handling” IEEE Transactions on Industry Applications, vol. 38, No. 3, May/Jun. 2002, pp. 840-845. |
“Characteristics of electrostatic Chuck(ESC)” Advanced Materials Research Group, New Technology Research Laborotory, 2000, pp. 51-53 accessed at http://www.socnb.com/report/ptech_e/2000p51_e.pdf. |
Guerre, Roland, et al., “Selective Transfer Technology for Microdevice Distribution” Journal of Microelectromechanical Systems, vol. 17, No. 1, Feb. 2008, pp. 157-165. |
Harris, Jonathan H., “Sintered Aluminum Nitride Ceramics for High-Power Electronic Applications” Journal of the Minerals, Metals and Materials Society, vol. 50, No. 6, Jun. 1998, p. 56. |
Horwitz, Chris M., “Electrostatic Chucks: Frequently Asked Questions” Electrogrip, 2006, 10 pgs, accessed at www.electrogrip.com. |
Lee, San Youl, et al., “Wafer-level fabrication of GAN-based vertical light-emitting diodes using a multi-functional bonding material system” Semicond. Sci. Technol. 24, 2009, 4 pgs. |
“Major Research Thrust: Epitaxial Layer Transfer by Laser Lift-off” Purdue University, Heterogeneous Integration Research Group, accessed at https://engineering.purdue.edu/HetInt/project_epitaxial_layer_transfer_llo.htm, last updated Aug. 2003. |
Mei, Zequn, et al., “Low_Temperature Solders” Hewlett-Packard Journal, Article 10, Aug. 1996, pp. 1-10. |
Mercado, Lei, L., et al., “A Mechanical Approach to Overcome RF MEMS Switch Stiction Problem” 2003 Electronic Components and Technology Conference, pp. 377-384. |
Miskys, Claudio R., et al., “Freestanding GaN-substrates and devices” phys. Stat. sol. © 0, No. 6, 2003, pp. 1627-1650. |
“Principles of Electrostatic Chucks: 1—Techniques for High Performance Grip and Release” ElectroGrip, Principles1 rev3 May 2006, 2 pgs, accessed at www.electrogrip.com. |
Steigerwald, Daniel, et al., “III-V Nitride Semiconductors for High-Perfromance Blue and Green Light-Emitting Devices” article appears in journal JOM 49 (9) 1997, pp. 18-23. Article accessed Nov. 2, 2011 at http://www.tms.org/pubs/journals/jom/9709/setigerwald-9709.html, 12 pgs. |
Widas, Robert, “Electrostatic Substrate Clamping For Next Generation Semiconductor Devices” Apr. 21, 1999, 4 pgs. |
“12-Bit High Bandwidth Multiplying DAC with Serial Interface: Data Sheet AD5452W,” Rev. 0, Analog Devices, Inc., 2012, 24 pgs. |
“Circuit Note CN-0139: Single Supply Low Noise LED Current Source Driver Using a Current Output DAC in the Reverse Mode” Rev. 0, Analog Devices, Inc., 2009, 2 pgs. |
“LM3450: LM3450A LED Drivers with Active Power Factor Correction and Phase Dimming Decoder,” Texas Instruments, Inc. SNVS681C, Nov. 2010—Revised Jun. 2011, 37 pgs. |
“Application Guide: Driving LEDs,” found at www.micropowerdirect.com, Jun. 21, 2011, 8 pgs. |
Tsujimura, et al., “OLED Displays: Fundamentals and Applications” 4.3 Passive-Matrix OLED Display, pp. 91-109, 5.2 TFT Process, pp. 110-120, 7.2 OLED Lighting Requirement, pp. 191-196, 2012, John Wiley & Sons, Inc., Hoboken, New Jersey, USA. |
PCT International Search Report and Written Opinion for International Application No. PCT/US2013/074156, mailed Mar. 31, 2014, 17 pages. |
Bower, et al., “Transfer-Printed Integrated Circuits for Display Backplanes,” Semprius, Inc., ISSN-L 1883-2490/17/1203, 2010, pp. 1203-1206. |
Bullis, Kevin, “Making Nanoelectronics for Displays,” MIT Technology Review, Dec. 19, 2006, 3 pgs. Web. Jan. 14, 2014. <http://m.technologyreview.com/NanoTech/17912/>. |
“Semprius Named to MIT Technology Review's 2013 50 Disruptive Companies List Recognizing World's Most Innovative Companies,” Business Wire, Feb. 20, 2013, 3 pgs. Web. Jan. 13, 2014. <http://www.businesswire.com/news/home/20130220005266/en/Semprius-Named-MIT-Technology-Review's-2013-50>. |
Wagner, et al., “The Semprius CPV Module Optics Performance,” 3rd Workshop on Concentrating Photovoltaic Optics and Power, 2010, 26 pgs. |
PCT International Preliminary Report on Patentability for PCT/US2013/074156 mailed Jul. 2, 2015, 13 pages. |
Microchip Tehnology Inc., DS41203D, PIC16F688 Microontroller Data Sheet, Dec. 2007, pp. 1-7. |
Bower et al., “Active-Matrix OLED Display Backplanes Using Transfer-Printed Microscale Integrated Circuits”, received from https://ieeexplore.ieee.org/document/5490647, Jun. 1-4, 2010, 5 pages. |
Min-Koo Han, “AM backplane for AMOLED” received from https://www.iitk.ac.in/asid06/proceedings/papers/MA3_1-I.pdf, Aug. 24, 2006, pp. 53-58. |
Joachim Hossick Schott, “Prospects for the ultimate energy density of oxide-based capacitor anodes” received from https://www.researchgate.net/publication/216619328_Prospects_for_the_ultimate_energy_density_of_oxide-based_capacitor_anodes, Jan. 2007, 10 pgs. |
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