Soft underlayer for heat assisted magnetic recording media

Information

  • Patent Grant
  • 9824711
  • Patent Number
    9,824,711
  • Date Filed
    Wednesday, June 25, 2014
    9 years ago
  • Date Issued
    Tuesday, November 21, 2017
    6 years ago
Abstract
A soft underlayer (SUL) and methods for making an SUL are provided, the SUL having characteristics that make it compatible with the high temperature requirements associated with heat-assisted magnetic recording (HAMR) media growth and writing, e.g., temperatures greater than 500° C. The SUL may have a high crystallization temperature of greater than 450° C. and a high Curie temperature greater than 300° C., for example. Additionally, the SUL can maintain a saturation magnetization value greater than, e.g., 9 kGauss, at such high temperatures, thereby having the ability to remain amorphous at temperatures up to, e.g., 650° C., and exhibiting a relatively flat integrated noise profile from approximately 300° C. to 650° C. Further still, a spacer layer material is chosen such that inter-diffusion does not occur at these high temperatures.
Description
BACKGROUND

For all types of substrates, magnetic recording media has begun to incorporate perpendicular magnetic recording (PMR) technology in an effort to increase areal density. Generally, PMR media may be partitioned into two primary functional regions: a soft underlayer (SUL) and a magnetic recording layer(s) (RL). FIG. 1 illustrates portions of a conventional PMR disk drive system having a recording head 101 including a trailing write pole 102 and a leading return (opposing) pole 103 magnetically coupled to the write pole 102. An electrically conductive magnetizing coil 104 surrounds the yoke of the write pole 102. The bottom of the opposing pole 103 has a surface area greatly exceeding the surface area of the tip of the write pole 102. As the magnetic recording disk 105 is rotated past the recording head 101, current is passed through the coil 104 to create magnetic flux within the write pole 102. The magnetic flux passes from the write pole 102, through the magnetic recording disk 105, and across to the opposing pole 103 to record in the PMR layer 150. The SUL 110 enables the magnetic flux from the trailing write pole 102 to return to the leading opposing pole 103 with low impedance.


With the advent of heat-assisted magnetic recording (HAMR) media, areal density in hard disk drives can be extended beyond 1 Tb/in2. However, superparamagnetic limits, thermal stability, and writability issues can limit the ability to increase areal densities in hard disk drives using conventional PMR media. Thus, and in order to support higher areal densities while also providing thermal stability, HAMR media is often made of magnetic materials or compounds with substantially higher magnetocrystalline anisotropy (indicated by the magnetic anisotropy constant, Ku) than that of non-HAMR media (e.g., Cobalt-Chromium-Platinum (CoCrPt) alloys). One example of such an alloy having substantially higher magnetocrystalline anisotropy is the L10 phase of Iron-Platinum (FePt) alloys. In principle, the higher Ku of L10 FePt allows grains as small as 2-5 nm to remain thermally stable. Unlike CoCrPt alloys however, the growth of chemically ordered L10 FePt requires a deposition temperature greater than 400° C. Moreover, due to the limitations in available writing fields, a write assist mechanism, such as HAMR is needed for high Ku media.


Because HAMR media is made of higher-stability magnetic compounds, as described above, it relies upon the application of heat to achieve changes in magnetic orientation. That is, the HAMR media is temporarily heated to reduce its coercivity below that of an applied magnetic write field from a recording head, i.e., the temperature of the recording location on the HAMR media is increased in order to sufficiently lower the location's Ku to allow a change to its magnetic orientation (i.e., record data). This allows for higher media anisotropy and smaller thermally stable grains.





BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments are illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:



FIG. 1 illustrates an example conventional PMR disk drive system;



FIG. 2A is a representation of a cross-sectional transmission electron microscopy image (TEM) of an as sputtered disk including conventional SULs;



FIG. 2B is a representation of a cross-sectional TEM image of a disk including conventional SULs annealed at 500° C.;



FIG. 3A illustrates a cross-sectional view of an example media structure utilized in evaluating SUL materials in accordance with one embodiment;



FIG. 3B illustrates a cross sectional view of an example media structure utilized in evaluating SUL materials in accordance with another embodiment;



FIG. 3C illustrates a cross sectional view of an example full stack HAMR media structure into which an SUL in accordance with various embodiments is integrated;



FIG. 4A illustrates X-ray diffraction (XRD) spectra as a function of annealing temperature for an SUL material in accordance with one embodiment;



FIG. 4B illustrates a representation of a TEM micrograph of the SUL material of FIG. 4A annealed at 650° C.;



FIG. 5A illustrates XRD spectra as a function of annealing temperature for an SUL material in accordance with another embodiment;



FIG. 5B illustrates a representation of a TEM micrograph of the SUL material of FIG. 5A annealed at 650° C.;



FIG. 6A is a table of melting point temperatures of various spacer layers utilized in an SUL material in accordance with various embodiments;



FIGS. 6B-6D illustrate representations of TEM micrographs for media structures utilizing various spacer layers in SULs configured in accordance with various embodiments;



FIG. 7 illustrates an example noise spectra comparison between a conventional SUL and a HAMR SUL configured in accordance with one embodiment;



FIG. 8 is a flow chart of example processes performed for manufacturing a HAMR disk utilizing an SUL in accordance with various embodiments; and



FIG. 9 illustrates an example disk drive in which a HAMR disk utilizing an SUL configured in accordance with various embodiments can be implemented.





DETAILED DESCRIPTION

In the following description, numerous specific details are set forth to provide a thorough understanding of various embodiment of the present disclosure. It will be apparent to one skilled in the art, however, that these specific details need not be employed to practice various embodiments of the present disclosure. In other instances, well known components or methods have not been described in detail to avoid unnecessarily obscuring various embodiments of the present disclosure.


The high deposition temperatures relied upon to obtain high Ku media and elevated temperatures during the writing process (as described above) can pose challenges when developing a SUL structure for HAMR media. Conventional PMR media design may include an amorphous antiparallel coupled SUL (through a thin spacer layer), which provides a closure path for conducting magnetic flux from the write pole to the opposing pole of the recording head.


From a materials perspective alone, once this conventional SUL structure is heated above 500° C., there is a loss in antiparallel coupling due to inter-diffusion of the spacer layer. Additionally, at such higher temperatures, a conventional SUL (which is typically an alloy of Co, Fe, and Tantalum (Ta)) begins to crystallize, resulting in higher roughness for the HAMR media. Both the inter-diffusion and crystallization characteristics of conventional SULs can be detrimental, and play contributing factors to higher noise arising from the conventional SUL, thereby limiting media signal-to-noise ratio (SNR). FIGS. 2A and 2B illustrate an example of this issue of interlayer diffusion and crystallization when a PMR-like SUL stack is annealed at 500° C.


In particular, FIGS. 2A and 2B illustrate representations of cross-sectional TEM images for an as sputtered disk 200a and another similar/identical disk 200b annealed at 500° C., respectively. FIG. 2A illustrates that the as sputtered disk 200a comprises a substrate layer 202, in this instance, a glass substrate, a Nickel-Tantalum (NiTa) adhesion layer 204, a first SUL 206-1 and a second SUL 206-2 with a Ruthenium (Ru) spacer layer 208 therebetween, and a carbon overcoat COC 210. Comparing FIGS. 2A and 2B, it can be seen that Ru spacer layer 208 inter-diffuses after annealing in disk 200b, and essentially disappears into the other layers. Moreover, the presence of crystalline grains is also evident in the annealed structure of disk 200b.


Accordingly, various embodiments are directed to an SUL having certain characteristics that make it compatible with the high temperature requirement (which in the context of HAMR media, may be considered to be temperatures greater than 400° C.) of HAMR media growth, as well as the HAMR writing process. Unlike conventional SULs used in present generation PMR, an SUL in accordance with various embodiments has a high crystallization temperature Tx (in this context, greater than 450° C.), and a high Curie temperature Tc (in this context, greater than 300° C.,). Additionally, an SUL developed in accordance with various embodiments can maintain a saturation magnetization value Bs greater than 9 kGauss at high temperatures. Thus, such an SUL can remain amorphous at temperatures up to, e.g., 650° C., and exhibit a relatively flat integrated noise profile from approximately 300° C. to 650° C. Further still, a spacer layer material is chosen such that inter-diffusion does not occur at these high temperatures.


To arrive at an SUL that meets the aforementioned criteria, various SUL materials can be evaluated. FIG. 3A illustrates a cross-sectional view of an example media structure 300a utilized in evaluating various SUL materials to determine their suitability for use in HAMR media. Media structure 300a may include a substrate 302, an adhesion layer 304 (30-80 nm thick), a prospective SUL 306 (10-100 nm thick), an overcoat layer 310 (2-4 nm thick), and a lubricant layer 312. Media structure 300a may be post deposition annealed at temperatures ranging from approximately 300-650° C. It should be noted that annealing is described herein as being performed at various temperatures to mimic actual HAMR media deposition conditions.



FIG. 3B illustrates a cross-sectional view of another example media structure 300b that may also be utilized in evaluating various SUL materials to determine their suitability for use in HAMR media. Media structure 300b, similar to media structure 300a, may include a substrate 302, an adhesion layer 304 (30-80 nm thick), an overcoat layer 310 (2-4 nm thick), and lubricant layer 312. In contrast to media structure 300a, however, media structure 300b may include two SULs 306-1 and 306-2 (each 10-50 nm thick), separated by a spacer layer 308 (0-5 nm thick).



FIG. 3C illustrates a full stack HAMR media structure 300c, into which a SUL in accordance with various embodiments can be integrated. HAMR media structure 300c may include a substrate 302. Substrate 302 may be, e.g., a high temperature glass, metal, and/or metal alloy material. In one embodiment, substrate 302 can be disk-shaped or annular. Glass substrates that may be used include, for example, a silica-containing glass such as borosilicate glass and aluminosilicate glass. Metal and metal alloy substrates that may be used include, for example, aluminum (Al), tantalum (Ta), and aluminum magnesium (AlMg) substrates. In an alternative embodiment, other substrate materials such as polymers and ceramics may be used.


HAMR media structure 300c may also include an adhesion layer 304 (30-80 nm thick), which can be, e.g., NiTa, disposed over substrate 302, as well as SUL 306 which in turn may be disposed over adhesion layer 304, and can be made up of first and second SULs 306-1 and 306-2 (each 10-50 nm thick), with a spacer layer 308 (0-5 nm thick) (as previously described with respect to FIG. 3B). The material(s) that make up SUL 306 and spacer layer 308 will be described in greater detail below. It should be noted that SUL 306-1 may be deposited over spacer layer 308, and SUL 306-2 may be deposited over adhesion layer 304 in an alternative embodiment.


Disposed over SUL 306, is a heatsink layer 314 (60-90 nm thick) and an interlayer 316 (5-6 nm thick). Heatsink layer 314 can be configured to specifically facilitate heat transfer for the HAMR media. It should be noted that although the illustrated example embodiment depicts heatsink layer 314 as being disposed between SUL 306 and interlayer 316, it should be appreciated that heatsink layer 314 may alternatively be disposed between the SUL 306 and adhesion layer 304. Generally, regardless of the position within HAMR media structure 300c, heatsink layer 314 is typically a metal or other heat-conductive material. For example, metals or other heat-conductive materials with thermal conductivity greater than 100 W·m−1·K−1 may be utilized.


Disposed over interlayer 316, is a recording layer 318 (8-12 nm thick). Recording layer 318 may be, as previously alluded to, an L10 FePt, FePd, CoPt, or MnAl magnetic recording layer, or a Cobalt Platinum (CoPt) or Cobalt Palladium (CoPd) multilayer alloy having a predetermined/preferred thickness, granular structure, small grain size, desired uniformity, high coercivity, high magnetic flux, and good atomic ordering, as would be appropriate for HAMR media. Other additive elements may be added to the aforementioned alloy recording layer 318 including, e.g., Silver (Ag), Gold (Au), Cu, or Nickel (Ni), or Co. Recording layer 318 may be characterized, for example, in part by a magnetocrystalline anisotropy greater than 1×107 erg/cm3.


Deposition of the various layers described herein may be accomplished via, e.g., sputter deposition techniques, e.g., electroless plating, sputtering (e.g., static or in-line), chemical vapor deposition (CVD), ion-beam deposition (IBD), etc. For example, static sputter systems may be utilized. With in-line sputtering systems, disk substrates are loaded on a pallet that passes through a series of deposition chambers the deposit films successively being deposited on substrates.


Further still, an overcoat layer 310 may be formed on top of recording layer 318 to, e.g., meet tribological requirements, such as contact-start-stop (CSS) performance and corrosion protection. Materials than can be utilized for overcoat layer 310 may be, e.g., carbon-based materials, such as hydrogenated or nitrogenated carbon. A lubricant layer 312 may be placed on top of overcoat layer 310 to further improve tribological performance. Some examples of lubricant that can be used in lubricant layer 312 include, but are not limited to perfluoropolyether, phosphazene lubricant, or a composite thereof.



FIGS. 4A and 4B illustrate XRD spectra as a function of annealing temperature and a representation of a bright field TEM micrograph for an SUL material annealed at 650° C., respectively. The SUL material in this example embodiment, and others which will be discussed below may have a Bs of 11.3 kGauss, for example, and may be one of a Co or CoFe alloy having at least one additive, the at least one additive comprising Ni, Zirconium (Zr), Boron (B), Ta, Tungsten (W), or Molybdenum (Mo). Such Co or CoFe materials may have also varying compositions due to the amounts of each material(s) included therein, e.g., 20 to 90% Co, 0 to 60% Fe, 0- to 20% Ni, 0 to 20% Zr, 0 to 15% B, 0 to 20% Ta, 0 to 10% W, and 0 to 10% Mo.



FIG. 4A illustrates XRD spectra for a substrate (e.g., substrate 302) only, and a media 400 (illustrated in part in FIG. 4B), with a structure similar to that illustrated in FIG. 3A, having a substrate 402, an NiTa adhesion layer 404, a CoFe-based SUL 406 including additives of Zr and B, an overcoat layer (not shown), and a lubricant layer (not shown), annealed at 300° C., 500° C., and 650° C. As can be appreciated, the XRD spectra of the substrate alone, and media 400 at the three temperatures remain substantially similar/graph on top of each other. This indicates a desired lack of crystallization (which would otherwise appear as peaks), therefore, suggesting that SUL 406 is amorphous at the aforementioned temperatures, including the deposition temperatures utilized in conjunction with HAMR media.



FIG. 4B illustrates a representation of a bright field TEM micrograph for media 400, where it can be seen that SUL 406 remains in an amorphous state when media 400 is annealed at 650° C. FIG. 4B further illustrates this amorphous state of SUL 406 given the lack of appearance of lattice fringes and diffraction contrast (which would otherwise suggest crystalline structure(s)). Inset 420 of FIG. 4B also confirms the amorphous microstructure of SUL 406 given that the fast Fourier transform image (FFT) of SUL 406 includes only diffused rings indicative of the amorphous microstructure.



FIGS. 5A and 5B illustrate X-ray diffraction (XRD) spectra as a function of annealing temperature and a bright field TEM micrograph for an SUL material annealed at 650° C., respectively. The SUL material in this example embodiment has a composition based upon CoFe and additives of Zr, B, and W, and has a Bs=10.6 kGauss.



FIG. 5A illustrates XRD spectra for a substrate (e.g., substrate 302) only, and a media 500 (illustrated in part in FIG. 5B), with a structure similar to that illustrated in FIG. 3A, having a substrate 502, an NiTa adhesion layer 504, SUL 506, an overcoat layer (not shown), and a lubricant layer (not shown), annealed at 300° C., 500° C., and 650° C. As can be appreciated, the XRD spectra of the substrate alone, and media 500 at the three temperatures remain substantially similar/graph on top of each other. This indicates a desired lack of crystallization (as described above with reference to FIG. 4A), therefore, suggesting that SUL 506 is also amorphous at the aforementioned temperatures, including the deposition temperatures utilized in conjunction with HAMR media.



FIG. 5B illustrates a bright field TEM micrograph for media 500, where it can be seen that SUL 506 remains amorphous when media 500 is annealed at 650° C. FIG. 5B additionally illustrates this amorphous state of SUL 506 given the lack of appearance of lattice fringes and diffraction contrast. Inset 520 of FIG. 5B further confirms the amorphous microstructure of SUL 506 because the FFT of CoFe-based SUL 506 includes only diffused rings indicative of the amorphous microstructure.


It should be noted that another SUL alloy in accordance with another embodiment, may have a composition based on a CoFe alloy with Ta and B additives, and may have a Bs=12.3 kGauss, and which exhibits a high Tx (greater than 600° C.). Referring back to FIG. 3C, it should be further noted that any of the aforementioned SUL alloys, whether it be the SUL 406, the SUL 506, or the aforementioned CoFe—Ta—B SUL, may be implemented, in any combination, as SUL 306-1 or SUL 306-2.


It should be further noted that additional SUL layers/stacks may be implemented/incorporated into the media/media structures described herein. That is, there can be multiple laminated SUL stacks, for example, in a single media structure.


As previously discussed, given a media structure like that of media structure 300b illustrated in FIG. 3B, utilizing Ru as spacer layer 308, and annealing at temperatures such as 500° C., can result in inter-diffusion where the Ru spacer layer 308 disappears into other layers. Thus, and in accordance with various embodiments, a spacer layer able to withstand the higher temperatures experienced with HAMR media, is utilized.



FIG. 6A is a table of different materials having a melting point higher than, e.g., 1800° C., that would lend itself to use in HAMR media as a spacer layer between first and second SULs. FIG. 6A indicates that Magnesium Oxide (MgO), Ta, Rhenium (Re), and W, respectively having melting points at 2852° C., 3020° C., 3182° C., and 3422° C., can avoid inter-diffusion in the context of HAMR media, in particular, resistance to the temperatures required for HAMR media growth/processing and writing. In one embodiment, W is utilized as a spacer layer, the flattest microstructure and the highest of the indicated melting points associated with W, wherein a flat microstructure and high melting point are conducive to reducing noise. However, it should be noted that other materials or alloys may be utilized as a spacer layer, including but not limited to the following: Niobium (Nb), Vanadium (V), Mo, Osmium (Os), Carbon (C), Titanium Nitride (TiN), TiC, VN, MoC, TaN, TaC, ZrO2, Yttrium Oxide (Y203), or Silicon Dioxide (SiO2).



FIGS. 6B and 6C illustrate representations of TEM micrographs for media 600a and 600b, respectively, each with a glass substrate 602, an NiTa adhesion layer 604, SUL A 606-1, SUL B 606-2, a carbon overcoat layer 610, and a lubricant layer 612. Furthermore, media 600a utilizes an MgO spacer layer 608, while media 600b utilizes a Ta spacer layer 608.



FIG. 6D illustrates a representation of a TEM micrograph for media 600c, respectively, SUL 1606-1, SUL 2606-2, a carbon overcoat layer 610, a heatsink layer 614, an interlayer 616, and a recording layer 618. Furthermore, media 600c utilizes a W spacer layer 608.


As can be appreciated from FIGS. 6B-6D, MgO, Ta, and W spacer layers are resistant to inter-diffusion, and show negligible diffraction contrast, indicating that these spacer layer materials have amorphous microstructures even after annealing at high temperatures, e.g., 550° C.



FIG. 7 illustrates an example noise spectra comparison between a HAMR SUL material, such as those described herein, and a conventional, e.g., Co—Fe—Ta PMR SUL (Co being 20 to 40%, Fe being 40 to 60%, and Ta being 5-20%). As shown in FIG. 7, when a HAMR SUL material is utilized, integrated noise remains relatively low and constant. As previously described, the HAMR SUL material, due its ability to remain amorphous and flat, even at the higher temperatures associated with HAMR media growth and HAMR writing, can avoid contributing to noise. However, with a conventional PMR SUL, FIG. 7A illustrates that upon annealing at temperatures greater than 500° C., noise increases significantly. Accordingly the HAMR SUL materials contemplated in accordance with various embodiments results in noise generation as a result of the HAMR SUL material and HAMR-associated temperatures are independent of each other.



FIG. 8 is a flow chart illustrating example processes for manufacturing a HAMR disk in accordance with various embodiments. At 810, a substrate is generated or otherwise provided. As previously discussed, the substrate may be a glass substrate. At 815, an adhesion layer is deposited over the substrate. At 820, an SUL is deposited over the adhesion layer. The SUL comprises first and second layers of a Co—Fe based alloy having at least one additive element and a spacer layer. The selection of a Co and Fe ratio and the at least one additive element in a saturation magnetization value greater than 9 kGuass, a Curie temperature exceeding 300° C., and a crystallization temperature exceeding 450° C., and wherein the spacer layer is resistant to inter-diffusion at or beyond 1800° C. The spacer layer is resistant to inter-diffusion at or beyond 1800° C. For example, and as described herein, each of the two layers making up the SUL may be a [CoFe]—ZrB or [CoFe]—ZrBW alloy, while the spacer layer can be one of the following: MgO; Re; W; or Ta. At 830, a heatsink layer is deposited over the SUL, or prior to deposition of the SUL, over the adhesion layer. At 840, an interlayer is deposited over one of the heatsink layer or SUL. At 850 a recording layer is deposited over the interlayer. At 860, an overcoat and lubricant layer are formed over the recording layer.



FIG. 9 illustrates a disk drive 900 having one or more disks 940. Disk 940 resides on a spindle assembly 960 that is mounted to drive housing 980. Data may be stored along tracks in the magnetic recording layer of disk 940. The reading and writing of data is accomplished with head 950 that has both read and write elements. The write element is used to alter the properties of the perpendicular magnetic recording layer of disk 940. In one embodiment, head 950 may have magneto-resistive (MR), or giant magneto-resistive (GMR) elements. In an alternative embodiment, head 950 may be another type of head, for example, an inductive read/write head or a Hall effect head. In some embodiments, disk 940 has a media structure as depicted in FIG. 3C, and disk drive 900 is a heat assisted magnetic recording (HAMR) drive and incorporate components of a laser source, a waveguide, and a near-field transducer (not shown). Techniques in generating and focusing a laser beam are known in the art, and thus, are not described in particular detail. A spindle motor (not shown) rotates spindle assembly 960 and, thereby, disk 940 to position head 950 at a particular location along a desired disk track. The position of head 950 relative to disk 940 may be controlled by position control circuitry 970.


Although described above in terms of various exemplary embodiments and implementations, it should be understood that the various features, aspects and functionality described in one or more of the individual embodiments are not limited in their applicability to the particular embodiment with which they are described, but instead can be applied, alone or in various combinations, to one or more of the other embodiments of the application, whether or not such embodiments are described and whether or not such features are presented as being a part of a described embodiment. Thus, the breadth and scope of the present application should not be limited by any of the above-described exemplary embodiments.


The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one media layer with respect to other layers. As such, for example, one layer disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer disposed between two layers may be directly in contact with the two layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming operations are performed relative to a substrate without consideration of the absolute orientation of the substrate.


Terms and phrases used in this document, and variations thereof, unless otherwise expressly stated, should be construed as open ended as opposed to limiting. As examples of the foregoing: the term “including” should be read as meaning “including, without limitation” or the like; the term “example” is used to provide exemplary instances of the item in discussion, not an exhaustive or limiting list thereof; the terms “a” or “an” should be read as meaning “at least one,” “one or more” or the like; and adjectives such as “conventional,” “traditional,” “normal,” “standard,” “known” and terms of similar meaning should not be construed as limiting the item described to a given time period or to an item available as of a given time, but instead should be read to encompass conventional, traditional, normal, or standard technologies that may be available or known now or at any time in the future. Likewise, where this document refers to technologies that would be apparent or known to one of ordinary skill in the art, such technologies encompass those apparent or known to the skilled artisan now or at any time in the future.


The presence of broadening words and phrases such as “one or more,” “at least,” “but not limited to” or other like phrases in some instances shall not be read to mean that the narrower case is intended or required in instances where such broadening phrases may be absent. The use of the term “module” does not imply that the components or functionality described or claimed as part of the module are all configured in a common package. Indeed, any or all of the various components of a module, whether control logic or other components, can be combined in a single package or separately maintained and can further be distributed in multiple groupings or packages or across multiple locations.


Additionally, the various embodiments set forth herein are described in terms of exemplary block diagrams, flow charts and other illustrations. As will become apparent to one of ordinary skill in the art after reading this document, the illustrated embodiments and their various alternatives can be implemented without confinement to the illustrated examples. For example, block diagrams and their accompanying description should not be construed as mandating a particular architecture or configuration.

Claims
  • 1. A recording medium, comprising: a magnetic recording layer;a soft underlayer disposed under the magnetic recording layer, the soft underlayer comprising:a first soft underlayer portion formed of a first soft underlayer material comprising a Cobalt-Iron (CoFe) material having a set of additives, the set of additives comprising W; anda second soft underlayer portion formed of a second soft underlayer material wherein the second underlayer material is different from the first underlayer material,wherein the first and second soft underlayer materials have Curie temperatures exceeding 300° C. and saturation magnetization values greater than 9 kGauss, and wherein the second soft underlayer material maintains an amorphous microstructure at a temperature greater than 450° C., wherein material composition ranges of the first and second soft underlayer materials comprise 20 to 90% Cobalt (Co), at most 60% Iron (Fe), at most 20% Nickel (Ni), at most 20% Zirconium (Zr), at most 15% Boron (B), at most 20% Tantalum (Ta), at most 10% Tungsten (W), and at most 10%_Molybdenum (Mo); anda spacer layer disposed between the first and second soft undeclayer portions, the spacer layer comprising material having inter-diffusion-resistant properties at temperatures greater than 1800° C., wherein the spacer layer is composed of one of Niobium (Nb), Vanadium (V), Mo, Osmium (Os), Carbon (C), Magnesium-Oxide (MgO), W, Rhenium (Re), Titanium Nitride (TiN), TiC, VN, MoC, TaN, TaC, Zr02, Yttrium Oxide (Y203), Silicon Dioxide (Si02), or Ta;an adhesion layer; anda heatsink layer configured to facilitate heat transfer for the recording medium, wherein the soft underlayer and heatsink layer are disposed over the adhesion layer and under the magnetic recording layer.
  • 2. The recording medium of claim 1, further comprising an interlayer disposed over the soft underlayer, an overcoat disposed over the magnetic recording layer, a lubricant disposed over the overcoat, and a substrate disposed under the adhesion layer, wherein the heatsink layer is disposed between the interlayer and soft underlayer.
  • 3. The recording medium of claim 2, wherein the substrate comprises one of a glass substrate, a metal substrate, a metal alloy substrate, a polymer substrate, or a ceramic substrate.
  • 4. The recording medium of claim 1, further comprising an interlayer disposed under the magnetic recording layer and over the soft underlayer, an overcoat disposed over the magnetic recording layer, a lubricant disposed over the overcoat, and a substrate disposed under the adhesion layer, wherein the heatsink layer is disposed between the soft underlayer and adhesion layer.
  • 5. The recording medium of claim 4, wherein the substrate comprises one of a glass substrate, a metal substrate, a metal alloy substrate, a polymer substrate, or a ceramic sub.
  • 6. The recording medium of claim 1 further comprising at least one additional soft underlayer, the at least one additional soft underlayer comprising additional first and second soft underlayer materials between which an additional spacer layer is disposed.
  • 7. The recording medium of claim 1, wherein the spacer layer has a melting temperature greater than 1800° C.
  • 8. The recording medium of claim 1, wherein the set of additives further comprises B and Ta.
  • 9. The recording medium of claim 1, wherein the set of additives further comprises B and Zr.
  • 10. The recording medium of claim 9, wherein the set of additives further comprises Ta.
  • 11. The recording medium of claim 10, wherein the second soft underlayer material comprises Co and Fe.
CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application Ser. No. 61/939,800, filed Feb. 14, 2014, which is incorporated herein by reference in its entirety.

US Referenced Citations (338)
Number Name Date Kind
6013161 Chen et al. Jan 2000 A
6063248 Bourez et al. May 2000 A
6068891 O'Dell et al. May 2000 A
6086730 Liu et al. Jul 2000 A
6099981 Nishimori Aug 2000 A
6103404 Ross et al. Aug 2000 A
6117499 Wong et al. Sep 2000 A
6136403 Prabhakara et al. Oct 2000 A
6143375 Ross et al. Nov 2000 A
6145849 Bae et al. Nov 2000 A
6146737 Malhotra et al. Nov 2000 A
6149696 Jia Nov 2000 A
6150015 Bertero et al. Nov 2000 A
6156404 Ross et al. Dec 2000 A
6159076 Sun et al. Dec 2000 A
6164118 Suzuki et al. Dec 2000 A
6200441 Gornicki et al. Mar 2001 B1
6204995 Hokkyo et al. Mar 2001 B1
6206765 Sanders et al. Mar 2001 B1
6210819 Lal et al. Apr 2001 B1
6216709 Fung et al. Apr 2001 B1
6221119 Homola Apr 2001 B1
6248395 Homola et al. Jun 2001 B1
6261681 Suekane et al. Jul 2001 B1
6270885 Hokkyo et al. Aug 2001 B1
6274063 Li et al. Aug 2001 B1
6283838 Blake et al. Sep 2001 B1
6287429 Moroishi et al. Sep 2001 B1
6290573 Suzuki Sep 2001 B1
6299947 Suzuki et al. Oct 2001 B1
6303217 Malhotra et al. Oct 2001 B1
6309765 Suekane et al. Oct 2001 B1
6358636 Yang et al. Mar 2002 B1
6362452 Suzuki et al. Mar 2002 B1
6363599 Bajorek Apr 2002 B1
6365012 Sato et al. Apr 2002 B1
6381090 Suzuki et al. Apr 2002 B1
6381092 Suzuki Apr 2002 B1
6387483 Hokkyo et al. May 2002 B1
6391213 Homola May 2002 B1
6395349 Salamon May 2002 B1
6403919 Salamon Jun 2002 B1
6408677 Suzuki Jun 2002 B1
6426157 Hokkyo et al. Jul 2002 B1
6429984 Alex Aug 2002 B1
6482330 Bajorek Nov 2002 B1
6482505 Bertero et al. Nov 2002 B1
6500567 Bertero et al. Dec 2002 B1
6528124 Nguyen Mar 2003 B1
6548821 Treves et al. Apr 2003 B1
6552871 Suzuki et al. Apr 2003 B2
6565719 Lairson et al. May 2003 B1
6566674 Treves et al. May 2003 B1
6571806 Rosano et al. Jun 2003 B2
6628466 Alex Sep 2003 B2
6664503 Hsieh et al. Dec 2003 B1
6670055 Tomiyasu et al. Dec 2003 B2
6682807 Lairson et al. Jan 2004 B2
6683754 Suzuki et al. Jan 2004 B2
6730420 Bertero et al. May 2004 B1
6743528 Suekane et al. Jun 2004 B2
6759138 Tomiyasu et al. Jul 2004 B2
6778353 Harper Aug 2004 B1
6795274 Hsieh et al. Sep 2004 B1
6855232 Jairson et al. Feb 2005 B2
6857937 Bajorek Feb 2005 B2
6893748 Bertero et al. May 2005 B2
6899959 Bertero et al. May 2005 B2
6916558 Umezawa et al. Jul 2005 B2
6939120 Harper Sep 2005 B1
6946191 Morikawa et al. Sep 2005 B2
6967798 Homola et al. Nov 2005 B2
6972135 Homola Dec 2005 B2
7004827 Suzuki et al. Feb 2006 B1
7006323 Suzuki Feb 2006 B1
7016154 Nishihira Mar 2006 B2
7019924 McNeil et al. Mar 2006 B2
7045215 Shimokawa May 2006 B2
7070870 Bertero et al. Jul 2006 B2
7090934 Hokkyo et al. Aug 2006 B2
7099112 Harper Aug 2006 B1
7105241 Shimokawa et al. Sep 2006 B2
7119990 Bajorek et al. Oct 2006 B2
7147790 Wachenschwanz et al. Dec 2006 B2
7161753 Wachenschwanz et al. Jan 2007 B2
7166319 Ishiyama Jan 2007 B2
7166374 Suekane et al. Jan 2007 B2
7169487 Kawai et al. Jan 2007 B2
7174775 Ishiyama Feb 2007 B2
7179549 Malhotra et al. Feb 2007 B2
7184139 Treves et al. Feb 2007 B2
7196860 Alex Mar 2007 B2
7199977 Suzuki et al. Apr 2007 B2
7208236 Morikawa et al. Apr 2007 B2
7220500 Tomiyasu et al. May 2007 B1
7229266 Harper Jun 2007 B2
7239970 Treves et al. Jul 2007 B2
7252897 Shimokawa et al. Aug 2007 B2
7277254 Shimokawa et al. Oct 2007 B2
7281920 Homola et al. Oct 2007 B2
7292329 Treves et al. Nov 2007 B2
7301726 Suzuki Nov 2007 B1
7302148 Treves et al. Nov 2007 B2
7305119 Treves et al. Dec 2007 B2
7314404 Singh et al. Jan 2008 B2
7320584 Harper et al. Jan 2008 B1
7329114 Harper et al. Feb 2008 B2
7375362 Treves et al. May 2008 B2
7420886 Tomiyasu et al. Sep 2008 B2
7425719 Treves et al. Sep 2008 B2
7471484 Wachenschwanz et al. Dec 2008 B2
7498062 Calcaterra et al. Mar 2009 B2
7531485 Hara et al. May 2009 B2
7537846 Ishiyama et al. May 2009 B2
7549209 Wachenschwanz et al. Jun 2009 B2
7569490 Staud Aug 2009 B2
7597792 Homola et al. Oct 2009 B2
7597973 Ishiyama Oct 2009 B2
7608193 Wachenschwanz et al. Oct 2009 B2
7632087 Homola Dec 2009 B2
7656615 Wachenschwanz et al. Feb 2010 B2
7682546 Harper Mar 2010 B2
7684152 Suzuki et al. Mar 2010 B2
7686606 Harper et al. Mar 2010 B2
7686991 Harper Mar 2010 B2
7695833 Ishiyama Apr 2010 B2
7722968 Ishiyama May 2010 B2
7733605 Suzuki et al. Jun 2010 B2
7736768 Ishiyama Jun 2010 B2
7755861 Li et al. Jul 2010 B1
7758732 Calcaterra et al. Jul 2010 B1
7833639 Sonobe et al. Nov 2010 B2
7833641 Tomiyasu et al. Nov 2010 B2
7901802 Zhou Mar 2011 B2
7910159 Jung Mar 2011 B2
7911736 Bajorek Mar 2011 B2
7924519 Lambert Apr 2011 B2
7944165 O'Dell May 2011 B1
7944643 Jiang et al. May 2011 B1
7955723 Umezawa et al. Jun 2011 B2
7964297 Deng et al. Jun 2011 B2
7983003 Sonobe et al. Jul 2011 B2
7993497 Moroishi et al. Aug 2011 B2
7993765 Kim et al. Aug 2011 B2
7998912 Chen et al. Aug 2011 B2
8002901 Chen et al. Aug 2011 B1
8003237 Sonobe et al. Aug 2011 B2
8012920 Shimokawa Sep 2011 B2
8038863 Homola Oct 2011 B2
8057926 Ayama et al. Nov 2011 B2
8062778 Suzuki et al. Nov 2011 B2
8064156 Suzuki et al. Nov 2011 B1
8076013 Sonobe et al. Dec 2011 B2
8092931 Ishiyama et al. Jan 2012 B2
8100685 Harper et al. Jan 2012 B1
8101054 Chen et al. Jan 2012 B2
8125723 Nichols et al. Feb 2012 B1
8125724 Nichols et al. Feb 2012 B1
8137517 Bourez Mar 2012 B1
8142916 Umezawa et al. Mar 2012 B2
8163093 Chen et al. Apr 2012 B1
8171949 Lund et al. May 2012 B1
8173282 Sun May 2012 B1
8178480 Hamakubo et al. May 2012 B2
8206789 Suzuki Jun 2012 B2
8218260 Iamratanakul et al. Jul 2012 B2
8247095 Champion et al. Aug 2012 B2
8257783 Suzuki et al. Sep 2012 B2
8277962 Zhou Oct 2012 B2
8298609 Liew et al. Oct 2012 B1
8298689 Sonobe et al. Oct 2012 B2
8309239 Umezawa et al. Nov 2012 B2
8316668 Chan et al. Nov 2012 B1
8331056 O'Dell Dec 2012 B2
8354618 Chen et al. Jan 2013 B1
8367228 Sonobe et al. Feb 2013 B2
8383209 Ayama Feb 2013 B2
8394243 Jung et al. Mar 2013 B1
8397751 Chan et al. Mar 2013 B1
8399809 Bourez Mar 2013 B1
8402638 Treves et al. Mar 2013 B1
8404056 Chen et al. Mar 2013 B1
8404369 Ruffini et al. Mar 2013 B2
8404370 Sato et al. Mar 2013 B2
8406918 Tan et al. Mar 2013 B2
8414966 Yasumori et al. Apr 2013 B2
8425975 Ishiyama Apr 2013 B2
8431257 Kim et al. Apr 2013 B2
8431258 Onoue et al. Apr 2013 B2
8453315 Kajiwara et al. Jun 2013 B2
8488276 Jung et al. Jul 2013 B1
8491800 Dorsey Jul 2013 B1
8492009 Homola et al. Jul 2013 B1
8492011 Itoh et al. Jul 2013 B2
8496466 Treves et al. Jul 2013 B1
8517364 Crumley et al. Aug 2013 B1
8517657 Chen et al. Aug 2013 B2
8524052 Tan et al. Sep 2013 B1
8530065 Chernyshov et al. Sep 2013 B1
8546000 Umezawa Oct 2013 B2
8551253 Na'Im et al. Oct 2013 B2
8551627 Shimada et al. Oct 2013 B2
8556566 Suzuki et al. Oct 2013 B1
8559131 Masuda et al. Oct 2013 B2
8562748 Chen et al. Oct 2013 B1
8565050 Bertero et al. Oct 2013 B1
8570844 Yuan et al. Oct 2013 B1
8580410 Onoue Nov 2013 B2
8584687 Chen et al. Nov 2013 B1
8591709 Lim et al. Nov 2013 B1
8592061 Onoue et al. Nov 2013 B2
8596287 Chen et al. Dec 2013 B1
8597723 Jung et al. Dec 2013 B1
8603649 Onoue Dec 2013 B2
8603650 Sonobe et al. Dec 2013 B2
8605388 Yasumori et al. Dec 2013 B2
8605555 Chernyshov et al. Dec 2013 B1
8608147 Yap et al. Dec 2013 B1
8609263 Chernyshov et al. Dec 2013 B1
8619381 Moser et al. Dec 2013 B2
8623528 Umezawa et al. Jan 2014 B2
8623529 Suzuki Jan 2014 B2
8634155 Yasumori et al. Jan 2014 B2
8658003 Bourez Feb 2014 B1
8658292 Mallary et al. Feb 2014 B1
8665541 Saito Mar 2014 B2
8668953 Buechel-Rimmel Mar 2014 B1
8674327 Poon et al. Mar 2014 B1
8685214 Moh et al. Apr 2014 B1
8696404 Sun et al. Apr 2014 B2
8711499 Desai et al. Apr 2014 B1
8743666 Bertero et al. Jun 2014 B1
8758912 Srinivasan et al. Jun 2014 B2
8787124 Chernyshov et al. Jul 2014 B1
8787130 Yuan et al. Jul 2014 B1
8791391 Bourez Jul 2014 B2
8795765 Koike et al. Aug 2014 B2
8795790 Sonobe et al. Aug 2014 B2
8795857 Ayama et al. Aug 2014 B2
8800322 Chan et al. Aug 2014 B1
8811129 Yuan et al. Aug 2014 B1
8817410 Moser et al. Aug 2014 B1
20020028357 Shukh Mar 2002 A1
20020060883 Suzuki May 2002 A1
20030022024 Wachenschwanz Jan 2003 A1
20040022387 Weikle Feb 2004 A1
20040132301 Harper et al. Jul 2004 A1
20040202793 Harper et al. Oct 2004 A1
20040202865 Homola et al. Oct 2004 A1
20040209123 Bajorek et al. Oct 2004 A1
20040209470 Bajorek Oct 2004 A1
20050036223 Wachenschwanz et al. Feb 2005 A1
20050037237 Chen Feb 2005 A1
20050142990 Homola Jun 2005 A1
20050150862 Harper et al. Jul 2005 A1
20050151282 Harper et al. Jul 2005 A1
20050151283 Bajorek et al. Jul 2005 A1
20050151300 Harper et al. Jul 2005 A1
20050155554 Saito Jul 2005 A1
20050167867 Bajorek et al. Aug 2005 A1
20050263401 Olsen et al. Dec 2005 A1
20060147758 Jung et al. Jul 2006 A1
20060181697 Treves et al. Aug 2006 A1
20060207890 Staud Sep 2006 A1
20070070549 Suzuki et al. Mar 2007 A1
20070245909 Homola Oct 2007 A1
20080075845 Sonobe et al. Mar 2008 A1
20080085427 Girt Apr 2008 A1
20080093760 Harper et al. Apr 2008 A1
20090067092 Suwa et al. Mar 2009 A1
20090071822 Sawada Mar 2009 A1
20090117408 Umezawa et al. May 2009 A1
20090136784 Suzuki et al. May 2009 A1
20090169922 Ishiyama Jul 2009 A1
20090191331 Umezawa et al. Jul 2009 A1
20090202866 Kim et al. Aug 2009 A1
20090311557 Onoue et al. Dec 2009 A1
20100143752 Ishibashi et al. Jun 2010 A1
20100190035 Sonobe et al. Jul 2010 A1
20100196619 Ishiyama Aug 2010 A1
20100196740 Ayama et al. Aug 2010 A1
20100209601 Shimokawa et al. Aug 2010 A1
20100209737 Bian et al. Aug 2010 A1
20100215992 Horikawa et al. Aug 2010 A1
20100232065 Suzuki et al. Sep 2010 A1
20100247965 Onoue Sep 2010 A1
20100261039 Itoh et al. Oct 2010 A1
20100279151 Sakamoto et al. Nov 2010 A1
20100300884 Homola et al. Dec 2010 A1
20100304186 Shimokawa Dec 2010 A1
20110097603 Onoue Apr 2011 A1
20110097604 Onoue Apr 2011 A1
20110171495 Tachibana et al. Jul 2011 A1
20110206947 Tachibana et al. Aug 2011 A1
20110212346 Onoue et al. Sep 2011 A1
20110223446 Onoue et al. Sep 2011 A1
20110244119 Umezawa et al. Oct 2011 A1
20110299194 Aniya et al. Dec 2011 A1
20110311841 Saito et al. Dec 2011 A1
20120069466 Okamoto et al. Mar 2012 A1
20120070692 Sato et al. Mar 2012 A1
20120077060 Ozawa Mar 2012 A1
20120127599 Shimokawa et al. May 2012 A1
20120127601 Suzuki et al. May 2012 A1
20120129009 Sato et al. May 2012 A1
20120140359 Tachibana Jun 2012 A1
20120141833 Umezawa et al. Jun 2012 A1
20120141835 Sakamoto Jun 2012 A1
20120148875 Hamakubo et al. Jun 2012 A1
20120156523 Seki et al. Jun 2012 A1
20120164488 Shin et al. Jun 2012 A1
20120170152 Sonobe et al. Jul 2012 A1
20120171369 Koike et al. Jul 2012 A1
20120175243 Fukuura et al. Jul 2012 A1
20120189872 Umezawa et al. Jul 2012 A1
20120196049 Azuma et al. Aug 2012 A1
20120207919 Sakamoto et al. Aug 2012 A1
20120225217 Itoh et al. Sep 2012 A1
20120251842 Yuan et al. Oct 2012 A1
20120251846 Desai et al. Oct 2012 A1
20120276417 Shimokawa et al. Nov 2012 A1
20120308722 Suzuki et al. Dec 2012 A1
20130022842 Zhou Jan 2013 A1
20130040167 Alagarsamy et al. Feb 2013 A1
20130071694 Srinivasan et al. Mar 2013 A1
20130128378 Yuan et al. May 2013 A1
20130165029 Sun et al. Jun 2013 A1
20130175252 Bourez Jul 2013 A1
20130194901 Kanbe et al. Aug 2013 A1
20130216865 Yasumori et al. Aug 2013 A1
20130224067 Sawada Aug 2013 A1
20130230647 Onoue et al. Sep 2013 A1
20130314815 Yuan et al. Nov 2013 A1
20140011054 Suzuki Jan 2014 A1
20140044992 Onoue Feb 2014 A1
20140050843 Yi et al. Feb 2014 A1
20140151360 Gregory et al. Jun 2014 A1
20140234666 Knigge et al. Aug 2014 A1
Foreign Referenced Citations (1)
Number Date Country
101882445 Nov 2010 CN
Non-Patent Literature Citations (6)
Entry
English abstract of JP 2010-055691, Japan, Mar. 11, 2010.
STN search history, STN database, Apr. 15, 2016.
English Abstract of WO2012/026405, Atsushi et al., Mar. 2012, p. 1-6.
Thiele et al., “Perpendicular Magnetic Anisotropy and Magnetic Domain Structure in Sputtered Epitaxial FePT (001) L10 films,” Journal of Applied Physicis, vol. 84, No. 10, Nov. 15, 1998, pp. 5686-5692.
Weller et al., “High Ku Materials Approach to 100 Gbits/in2,” IEEE Trans. on Magnetics, vol. 36, No. 1, Jan. 2000, pp. 10-15.
Weller et al., “Thermal Effects Limits in Ultrahigh-Density Magnetic Recording,” IEEE Trans. of Magnetics, vol. 35, No. 6, Nov. 1999, pp. 4423-4439.
Provisional Applications (1)
Number Date Country
61939800 Feb 2014 US