The present invention relates to a solar cell module in which solar cells are connected by wiring material, and a method for manufacturing the solar cell module.
In addition to a vapor deposition method, a sputtering method, and screen printing that prints a conductive paste, a plating method is also used as a method for forming electrodes of a solar cell.
For example, in Patent Literature 1, as a method for manufacturing a solar cell, a method is described in which seed metal is disposed on a silicon substrate, and the seed metal is used to form a surface electrode and a rear electrode by electrolytic plating.
An object of the present invention is to provide a solar cell module with superior performance.
A solar cell module according to the present invention includes: a photoelectric conversion section; a collecting electrode disposed on the photoelectric conversion section; an adhesive layer disposed on the collecting electrode; and wiring material that is connected to the collecting electrode with the adhesive layer therebetween; wherein: in the collecting electrode, a thickness of an end portion of the collecting electrode is formed thicker than a center portion thereof in a longitudinal direction of the collecting electrode; and in the adhesive layer, a thickness of a portion corresponding to the center portion of the collecting electrode is formed thicker than a thickness of a portion corresponding to the end portion of the collecting electrode in the longitudinal direction of the collecting electrode.
A method for manufacturing a solar cell module according to the present invention is a method that forms a collecting electrode on a photoelectric conversion section, and connects wiring material to the collecting electrode with an adhesive layer therebetween, wherein: a power supply section is provided at both end portions of the photoelectric conversion section in a longitudinal direction of the collecting electrode, and the collecting electrode is formed by electrolytic plating in a formation region for the collecting electrode on the photoelectric conversion section; an adhesive is coated on the collecting electrode to form an adhesive layer; the collecting electrode and the wiring material are connected by pressing the wiring material from above the adhesive layer; a thickness of an end portion of the collecting electrode is formed thicker than a thickness of a center portion thereof in the longitudinal direction of the collecting electrode by electrolytic plating; and in the adhesive layer, a thickness of a portion that corresponds to the center portion of the collecting electrode is formed thicker than a thickness of a portion thereof that corresponds to the end portion of the collecting electrode in the longitudinal direction of the collecting electrode by pressing the wiring material against the collecting electrode.
The present invention provides a solar cell module with superior performance by means of the above described configuration.
a) and (b) are a plan view and a sectional view of a solar cell module of an embodiment according to the present invention.
a) and (b) are views illustrating a substrate with a plating mask in a procedure described in
a) and (b1) to (b3) are a plan view and sectional views of a solar cell formed by performing electrolytic plating using a plating mask in the embodiment according to the present invention.
Hereunder, an embodiment of the present invention is described in detail using the accompanying drawing. In the following description, like constituent elements are denoted by like reference numerals in all of the drawings, and duplicated descriptions are omitted. Further, in the description in the text, previously mentioned reference numerals are used where necessary.
a) and (b) illustrate a solar cell module 10, in which (a) is a plan view and (b) is a sectional view. The solar cell module 10 includes a photoelectric conversion section 11, collecting electrodes 12 and 13 that are formed on both sides of the photoelectric conversion section 11, wiring material 15 that is connected to the collecting electrode 12 with an adhesive layer 14 therebetween, and wiring material 17 that is connected to the collecting electrode 13 with an adhesive layer 16 therebetween.
The photoelectric conversion section 11 includes, as main surfaces, a light-receiving surface that is a face on which light from outside is incident, and a rear surface that is a face on the opposite side to the light-receiving surface. In
The photoelectric conversion section 11 generates photogenerated carriers that are electron-hole pairs by receiving light such as the light of the sun. The photoelectric conversion section 11, for example, has a substrate made of a semiconductor material such as crystalline silicon (c-Si), gallium arsenide (GaAs), or indium phosphide (InP). The structure of the photoelectric conversion section 11 is a p-n junction in a broad sense. For example, a heterojunction between an n-type single-crystal silicon substrate and amorphous silicon can be used. In such a case, a structure can be adopted in which an i-type amorphous silicon layer, a p-type amorphous silicon layer doped with boron (B) or the like, and a transparent conductive film (TCO) made of a translucent conductive oxide such as indium oxide (In2O3) are laminated on a light-receiving surface side of the substrate, while an i-type amorphous silicon layer, an n-type amorphous silicon layer doped with phosphorus (P) or the like, and a transparent conductive film are laminated on a rear surface side of the substrate.
As long as the photoelectric conversion section 11 has a function that converts light such as sunlight to electricity, a structure other than the structure described above may also be adopted. For example, a structure may be adopted that includes a p-type polycrystalline silicon substrate, an n-type diffusion layer that is formed on the light-receiving surface side thereof, and an aluminum metal film that is formed on the rear surface side thereof.
The collecting electrodes 12 and 13 are electrode layers that are formed by a plating method on the light-receiving surface and the rear surface of the photoelectric conversion section 11, respectively, and are electrically connected to the photoelectric conversion section 11. Because the collecting electrodes 12 and 13 are formed by a plating method, the thickness of the collecting electrodes 12 and 13 at end portions in an X direction of the photoelectric conversion section 11 is thicker than the thickness of the collecting electrodes 12 and 13 at the center portion of the photoelectric conversion section 11. In this case, as shown in
The wiring material 15 on the light-receiving surface side is a conductive material that is pressed against the photoelectric conversion section 11 through the adhesive layer 14 to be mechanically and electrically connected to the collecting electrode 12.
The wiring material 15 is a thin plate that is composed of a metal conductive material such as copper. Wiring material having a twisted-wire shape can also be used instead of a thin plate. Besides copper, it is also possible to use silver, aluminum, nickel, tin, gold or alloys of these metals as the conductive material. Note that although in
The adhesive layer 14 is arranged between the collecting electrode 12 and the wiring material 15, and is a layer of resin adhesive that mechanically and electrically connects the collecting electrode 12 and the wiring material 17 as a result of crimping. The adhesive layer 14 is preferably an elastic and contractile material. A thermosetting resin adhesive layer that is acryl-based, highly flexible polyurethane-based, or epoxy-based can be used as the adhesive layer 14. The resin adhesive layer may be a liquefied layer or may be a resin adhesive sheet in a semi-cured state. Hereunder, the description is continued on the assumption that a resin adhesive sheet is used as the adhesive layer 14.
Preferably, conductive particles are included in the adhesive layer 14. In such a case, nickel, silver, gold-coated nickel, tin-plated copper and the like can be used as the conductive particles. When using an insulating resin adhesive layer that does not include conductive particles, a configuration is adopted in which either one of, or both of, the mutually opposing faces of the wiring material 15 and the collecting electrode 12 are rendered uneven, and the insulating resin is appropriately removed from between the wiring material 15 and the collecting electrode 12 to electrically connect the wiring material 15 and the collecting electrode 12.
Although originally the adhesive layer 14 has an even thickness, the thickness thereof at the end portions of the photoelectric conversion section 11 and the thickness at the center portion become uneven during the process in which the wiring material 15 is pressed against the photoelectric conversion section 11. That is, since the thickness of the collecting electrode 12 is thick at the end portions A and B of the photoelectric conversion section 11 and the thickness of the collecting electrode 12 is thin at the center portion of the photoelectric conversion section 11, when the wiring material 15 is pressed through the adhesive layer 14, a pressing force with respect to the adhesive layer 14 is liable to rise at the end portions A and B at which the collecting electrode 12 projects more, in comparison to the center portion. Consequently, the adhesive layer 14 is more liable to be removed at the end portions A and B of the collecting electrode 12 than at the center portion, and the thickness thereof becomes thinner at the end portions A and B and becomes thicker at the center portion.
Similarly, the wiring material 17 on the rear surface side is a conductive material that is pressed against the photoelectric conversion section 11 through the adhesive layer 16 to be mechanically and electrically connected to the collecting electrode 13. The material of the wiring material 17 is the same as that of the wiring material 15. The material of the adhesive layer 16 is the same as that of the adhesive layer 14. On the rear surface also, similarly to the light-receiving surface side, the thickness of the adhesive layer 16 is thinner at the end portions C and D and thicker at the center portion.
Thus, in the X direction, the thickness of the respective adhesive layers 14 and 16 is thinner at portions corresponding to the end portions A, B, C and D at which the thickness of the collecting electrodes 12 and 13 is thick, and the thickness of the respective adhesive layers 14 and 16 is thicker at a portion corresponding to the center portion at which the thickness of the collecting electrodes 12 and 13 is thin. Therefore, a structure can be formed in which mechanical joints between the wiring materials 15 and 17 and the collecting electrodes 12 and 13 are strong and the electrical resistance is low at the end portions on the photoelectric conversion section 11 at which current crowding is liable to arise in the wiring materials 15 and 17. The reason that current crowding is liable to arise at the portions of the wiring materials 15 and 17 that are at the end portions of the photoelectric conversion section 11 is as follows. Although currents that flow through the wiring materials 15 and 17 separate in all directions at the center portion of the photoelectric conversion section 11, a state is entered in which all the currents are gathered at the end portions of the photoelectric conversion section 11. Consequently, the current density is high at the portions of the wiring materials 15 and 17 at the end portions of the photoelectric conversion section 11 and current crowding occurs.
First, the photoelectric conversion section 11 that has a substrate is prepared (S10). Next, a plating mask is disposed on the photoelectric conversion section 11 to prepare for the subsequent electrolytic plating.
In this case, a resist having opening sections 22, 23 and 24 for forming a collecting electrode is provided as a plating mask 21 on the photoelectric conversion section 11. The opening sections 22 to 24 are provided on each of the light-receiving surface side and the rear surface side of the photoelectric conversion section 11. Although the opening sections 22 to 24 have a rectangular shape, naturally the opening sections 22 to 24 may also have a shape other than a rectangular shape. The number of opening sections may also be other than three. Although the shape of the opening sections 22 to 24 on the light-receiving surface side and the shape of the opening sections on the rear surface are the same, naturally the shapes and numbers of the opening sections on the respective sides may be different to each other.
To form the plating mask 21 on the photoelectric conversion section 11, a method can be used in which a photosensitive resist is coated on the photoelectric conversion section 11, and the resist at the portions for the opening sections 22 to 24 is removed by performing selective exposure and development. Besides the aforementioned method, a method may also be adopted in which a mask layer having the opening sections 22 to 24 is printed on the photoelectric conversion section 11 by screen printing. Thus, the substrate with a plating mask 20 is obtained.
Returning again to
Power supply terminals for plating 25, 26, 27 and 28 are connected to the substrate with a plating mask 20. The power supply terminals 25 and 28 are also connected to the rear surface side, and not only to the light-receiving surface side.
Although omitted from the illustration in
The power supply terminals 25 to 28 are connected to the light-receiving surface side and the rear surface side, respectively, of the substrate with a plating mask 20, and a predetermined plating solution 31 is filled in a plating bath 30. Cyanide-based and non-cyanide-based solutions containing ions of the plating metal are available as the predetermined plating solution 31, and a non-cyanide-based solution is preferable from a safety aspect. The non-cyanide-based solution may be any of a non-cyanide-based neutral type, a non-cyanide-based weak acidic type, a non-cyanide-based acidic type, a non-cyanide-based weak alkaline type, and a non-cyanide-based alkaline type. Gold, silver, copper, nickel, palladium, platinum or the like may be used as the plating metal. In the case of copper plating, copper sulfate, copper pyrophosphate, copper cyanide or the like is used, while in the case of nickel plating, nickel chloride, Watt's nickel, nickel sulfamate or the like is used.
Further, anode plates 32 and 33 made of the same material as the plating metal are prepared. The anode plates 32 and 33 are for plating the light-receiving surface side and plating the rear surface side of the substrate with a plating mask 20, respectively. Lead lines are connected from each of the power supply terminals 25 to 28 on the light-receiving surface side of the substrate with a plating mask 20, and the four leader lines are put together to form a single cathode terminal on the light-receiving surface side. A leader line is also connected to an end portion of the anode plate 32 to form an anode terminal on the light-receiving surface side. Similarly, although not illustrated in
The anode plate 32 connected to the anode terminal on the light-receiving surface side, the anode plate 33 connected to the anode terminal on the rear surface side, and the substrate with a plating mask 20 connected to the cathode terminal on the light-receiving surface side and the cathode terminal on the rear surface side are immersed in the plating solution 31. With respect to the arrangement of the anode plates 32 and 33 and the substrate with a plating mask 20, as shown in
A plating power source 34 for the light-receiving surface side is connected between the anode terminal and cathode terminal on the light-receiving surface side, and a plating power source 35 for the rear surface side is connected between the anode terminal and cathode terminal on the rear surface side. Ions of the plating metal contained in the plating solution 31 move when a current is made to flow between the anode terminal and cathode terminal on the light-receiving surface side from the plating power source 34, and the plating metal deposits on the opening sections 22 to 24 on the light-receiving surface side of the substrate with a plating mask 20. Similarly, ions of the plating metal contained in the plating solution 31 move when a current is made to flow between the anode terminal and cathode terminal on the rear surface side from the plating power source 35, and the plating metal deposits on the opening sections 22 to 24 on the rear surface side of the substrate with a plating mask 20. Thus, electrolytic plating with respect to the substrate with a plating mask 20 is performed.
The thickness of a metal layer that deposits is the plating thickness. The plating thickness is determined by the size of a charge amount per unit area in the plating process. Since a charge amount is represented by (current value×time), if the period of time is the same, the plating thickness increases as the current value increases. According to the present embodiment, the conditions for the electrolytic plating, such as the positions of the power supply terminals 25 to 28 and the charge amount and the like, are set so that the plating thickness of the collecting electrodes 12 and 13 is thicker at the end portions than at the center portion in the X direction of the photoelectric conversion section 11.
After predetermined electrolytic plating has been performed with respect to the substrate with a plating mask 20, operation of the plating power sources 34 and 35 is stopped. The substrate with a plating mask 20 with respect to which the electrolytic plating was performed is then lifted up from the plating solution 31, and after being suitably washed, the power supply terminals 25 to 28 on the light-receiving surface side and the power supply terminals on the rear surface side are detached. The plating mask 21 is then removed. An applicable solvent can be used to remove the plating mask 21.
In the solar cell 40, the collecting electrode 12 is disposed on the light-receiving surface side of the photoelectric conversion section 11, and the collecting electrode 13 is disposed on the rear surface side. Here, the thickness of the collecting electrodes 12 and 13 in the X direction is thicker at the end portions on the photoelectric conversion section 11 than at the center portion.
Returning again to
Returning again to
The crimping process is performed so that, in the state shown in
As shown in
Returning again to
A sectional view of the solar cell module 10 after the crimping process is shown in
At this time, a configuration may also be adopted in which the adhesive that serves as the adhesive layer 14 is pushed out at the end portions of the photoelectric conversion section 11 and spreads as far as the side faces of the wiring materials 15 and 17 to form a fillet. As a result, the mechanical adhesive strength of the wiring materials 15 and 17 becomes stronger.
a) and (b1) to (b3) illustrate an example in which, by appropriately setting the thickness of the plating mask 21, the width of the end portions of the collecting electrode 12 can be made wider than the width of the center portion thereof in the X direction.
Here, a width dimension of the opening sections 22 to 24 of the plating mask 21 is denoted by “W”, and a thickness dimension is denoted by “H”. When electrolytic plating is performed, a plating thickness h2 of the end portions of the collecting electrode 12 becomes thicker than a plating thickness h1 of the center portion thereof. Here, the electrolytic plating conditions are set so that h2>H>h1. That is, formation of the collecting electrode 12 by electrolytic plating is performed until the thickness h2 of the end portions of the collecting electrode 12 in the X direction becomes thicker than the thickness H of the plating mask 21, and so that the thickness h1 of the center portion of the collecting electrode 12 does not exceed the thickness H of the plating mask 21. When the collecting electrode 12 is formed in this manner, a width w1 of the center portion of the collecting electrode 12 is restricted by the width dimension W of the plating mask 21, and therefore the width w1 is such that w1=W. In contrast, at the end portions of the collecting electrode 12, since the plating thickness h2 exceeds the thickness dimension H of the plating mask 21, the width w2 of the collecting electrode 12 becomes wider than W. That is, the widths are such that w2>W=w1. The result is the same on the rear surface side also.
Thus, the widths of the collecting electrodes 12 and 13 can be widened at the end portions on the photoelectric conversion section 11 at which current crowding is liable to arise in the wiring materials 15 and 17. As a result, the structure is one in which the mechanical joints between the wiring materials 15 and 17 and the collecting electrodes 12 and 13 at the end portions on the photoelectric conversion section 11 are stronger, and the electrical resistance is lower.
A bright plating process and a matte plating process are available as plating processes, and enhancement of the photoelectric conversion efficiency in the solar cell module 10 can be achieved by selectively using these plating processes in a suitable manner. In particular, use of these two kinds of plating processes is effective when providing a textured structure on the surface of the solar cell 40.
In this case, formation of the photoelectric conversion section 11 is performed (S20), and a textured structure is then formed on the surface thereof (S21). The contents of S20 are the same as in S10 of
Next, formation of the collecting electrode is performed, and a matte plating method is used as the plating method (S22). The matte plating method is in contrast to the bright plating method. The bright plating method is a method in which a suitable bright material is added to the plating solution, and a deposition rate with respect to convex portions is controlled to thereby form a flat and bright metal layer. Therefore, if the bright plating method is used for forming a main layer of the collecting electrode, because the electrode surface will be flat, a light trapping effect will decrease and the photoelectric conversion efficiency will decline.
To further enhance the photoelectric conversion efficiency, it is good to raise the reflectivity with respect to the concavo-convex surface. Therefore, returning again to
Since the structure in this case is one for ensuring that the concavities and convexities on the surface of the matte plated layer 51 having a high light trapping effect are left as they are, the bright plated layer that is formed here may have a thin thickness. If the metal surface of the matte plated layer 51 has a sufficient light trapping effect, the bright plating process need not be performed. A layered product in which the bright plated layer 52 is formed on the matte plated layer 51 corresponds to the collecting electrode 12 that was described above using
In
By forming the matte plated layer 51 on the textured structure 50 in this manner, the surface thereof serves as concavities and convexities, and hence incident light can be converted to scattered light to thereby improve the photoelectric conversion efficiency of the solar cell module 60.
10, 60 solar cell module, 11 photoelectric conversion section, 12, 13 collecting electrode, 14, 16, 41, 43 adhesive layer, 15, 17, 42, 44 wiring material, 20 substrate with a plating mask, 21 plating mask, 22, 23, 24 opening section, 25, 26, 27, 28 power supply terminal, 30 plating bath, 31 plating solution, 32, 33 anode plate, 34, 35 plating power source, 40, 53 solar cell, 45 lower crimping jig, 46 upper crimping jig, 50 textured structure, 51 matte plated layer, 52 bright plated layer, 61 protective member, 62 filler
The present application is a continuation under 35 U.S.C. §120 of PCT/JP2012/066667, filed Jun. 29, 2012, which is incorporated herein by reference.
Number | Date | Country | |
---|---|---|---|
Parent | PCT/JP2012/066667 | Jun 2012 | US |
Child | 14539057 | US |