The present invention relates to a solar cell module.
In recent years, the demand for a solar cell for domestic use tends to markedly increase in terms of environmental protection. A solar cell element is manufactured by preparing a first conductivity type semiconductor substrate and diffusing impurities of a second conductivity type which is different from the above substrate to form a pn junction.
These solar cell elements include a first electrode and a second electrode formed by applying materials composed of mainly metal on the front surfaces and back surfaces and firing (for example, Japanese Patent Application Laid-Open No. 2006-210654, Japanese Patent Application Laid-Open No. 2003-273377, and Japanese Patent Application Laid-Open No. 10-144943).
In general, a solar cell module configured such that a plurality of solar cell elements are connected to extract electric output, is used. This solar cell module generally has the configuration of connecting the first electrode to the second electrode of the plurality of the solar cell elements with an inner lead (tab) and covering first surfaces of the plurality of the connected solar cell elements with a translucent member and second surfaces with a colored member.
However, along with reduction in thickness of a substrate, when manufacturing, storing, transporting the solar cell module, the electrodes expand or contract due to the influence of heat and the like, cracks are easily generated on a surface of the substrate because of the influence of thermal stress. For instance, when the inner lead is connected to the second electrode by soldering, the-substrate receives stress, the surface of the substrate located near the first electrode may be easily chipped. Particularly, when a lead-free solder such as Sn—Ag is used, the influence of the stress due to heat is increased since a melting point of the solder becomes high, and the surface of the substrate is easily chipped. Specifically, chips are caused at a boundary of the first electrode.
The present invention has been made to solve the above problem, and has an object of providing a solar cell module in which cracks are less likely difficult to be generated in a substrate.
In order to solve the above problem, a solar cell module according to one embodiment of the present invention includes: a substrate including a first surface receiving a light and a second surface disposed at a back side of the first surface; a first electrode provided on the first surface of the substrate; and a second electrode provided on the second surface of the substrate and including a first opening immediately below the first electrode, wherein a part of the periphery of the first electrode is disposed in the first opening in a perspective plain view.
Accordingly, the stress applied to the substrate located near the first electrode can be reduced. Thus, chips of a surface part of the substrate are reduced, thereby improving the reliability of the solar cell module,
The other objects, features, aspects and advantages of the present invention become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
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Hereinafter, a solar cell module according to a first embodiment will be described, referring to
The solar cell module according to the present embodiment includes a plurality of solar cell elements including a substrate 1 including a first surface (an tipper surface in
A diffusion layer 2 is formed at a side of the first surface of the substrate 1, and a back surface field region (BSF) 6 is formed at a side of the second surface of the substrate 1. Also, an antireflective film 3 is disposed on the first surface of the substrate 1. Such a substrate 1 is composed of, for example, monocrystalline or polycrystalline silicon, and includes semiconductor impurities having p-type conductivity such as boron (B).
The diffusion layer 2 is formed in the substrate 1. When the substrate 1 is a p-type silicon substrate, a pn junction is formed between a p-type bulk region and the diffusion layer 2. As an n-type doping element, for example, phosphorus (P) is used.
The antireflective film 3 serves to reduce reflectance of a light with a predetermined wavelength domain and increase photoproduction carrier amount so as to improve photocurrent density Jsc of a solar cell element 10. The antireflective film 3 is composed of, for example, an SiNx film (having composition variation centering on Si3N4 stoichiometry), a TiO2 film, a SiO2 film, an MgO film, an ITO film, an SnO2 film, ZnO film, or the like. The thickness is appropriately selected for each material, making difficult to reflect for an arbitrary incident light. For example, when the substrate 1 is composed of silicon, preferably, a refractive index is approximately from 1.8 to 2.3, and a thickness is approximately from 500 to 1200 Å.
In
The first electrode 4 includes a first output extraction portion (bus bar electrode) 4a and a first power collection portion (finger electrode) 4b. At least a part of the first output extraction portion 4a intersects the first power collection portion 4b. The first electrode 4 of the present embodiment includes the first output extraction portion 4a which is wide to be approximately from 1.3 mm to 2.5 mm, and the first power collection unit 4b provided perpendicularly to the first output extraction portion 4a, which is narrow to be approximately from 50 to 200 μm. The thickness of this first electrode 4 (first output extraction portion 4a, first power collection unit 4b) is approximately from 10 to 40 μm.
The second electrode 5 includes a second output extraction portion 5a and a second power collection unit 5b. The thickness of the second output extraction portion 5a of the present embodiment is approximately from 10 μm to 30 μm, the width thereof is approximately from 3.5 mm to 7 mm. The thickness of the second power collection unit 5b is approximately from 15 μm to 50 μm.
These first power collection unit 4b and second power collection unit 5b serve to collect power of carriers generated mainly in the substrate 1, and the first output extraction portion 4a and the second output extraction portion 5a serve to collect the carriers collected in the first and second power collection units 4b, 5b and to output.
The first electrode 4 (first output extraction portion 4a) and the second electrode 5 (second output extraction portion 5a) of the adjacent solar cell elements 10 are connected with an inner lead 11.
The inner lead 11 connected to the first electrode 4 has a liner shape in which one side is longer than the other side in a plain view. A direction shown with an arrow M in
Next, a manufacturing process of the solar cell element 10 having the above structure will be described.
When the substrate 1 is a monocrystalline silicon substrate 1, it is formed by, e.g., a pulling method, and when the substrate 1 is a polycrystalline silicon substrate 1, it is formed by, e.g., a casting method. Mass production is possible for the polycrystalline silicon substrate 1, which is more advantageous than the monocrystalline silicon substrate 1 in view of manufacturing cost, and therefore, an example using polycrystalline silicon will be described here.
In order to prepare the substrate 1, first, an ingot of polycrystalline silicon is prepared by, e.g., the casting method. For instance, a p-type polycrystalline silicon ingot is formed by melting and solidifying silicon material including a dopant of B or the like. The ingot of polycrystalline silicon is sliced to have the thickness of, e.g. 350 μm or less, or more preferably, 200 μm or less, and cut into the size of approximately 10 cm by 10 cm to 25 cm by 25 cm to prepare the substrate 1. In order to clean a part being damaged and a part being contaminated in a cross-sectional surface of the substrate 1, etching is preferably performed in only a trace amount on the surface with NaOH, KOH, hydrofluoric acid or fluoro-nitric acid. Thereafter, it is more preferable to form. microscopic projections on the surface of the substrate 1, using a dry etching method or a wet etching method.
Next, the n-type diffusion layer 2 is formed in the substrate 1. This forms a pn junction between the p-type bulk region and the diffusion layer 2. This diffusion layer 2 is formed by an application and thermal-diffusion method in which P2O5 in paste form is applied to the surface of the substrate 1 and then thermally diffused, a vapor-phase thermal-diffusion method in which POCl3 (phosphorus oxychloride) in gas form is used as a diffusion source, and an ion implantation method in which phosphorus ions are directly diffused. This diffusion layer 2 is formed to have the depth of approximately 0.2 to 0.5 μm. Note that the formation method of the diffusion layer 2 is not limited to the above methods, but a crystalline silicon film including an amorphous silicon hydride film, a microcrystalline silicon film, or the like may be formed using a thin-film deposition technique, for example. Further, an i-type silicon region may be formed between the substrate 1 and the diffusion layer 2.
Next, the antireflective film 3 is formed. The antireflective film 3 is formed using a plasma enhanced chemical vapor deposition (PECVD) method, a vapor deposition method, a sputtering method or the like.
Next, the BSF region 6 in which a semiconductor impurity of a first conductivity type is diffused in high concentration is formed at the second surface side of the substrate 1. As a p-type impurity element, such as B and Al are used, and an ohmic contact is achieved between impurity and the second electrode 5 described later by having p+ type with an impurity element of high concentration. As a method, such as a method of forming at a temperature of approximately 800 to 1100° C. by a thermal diffusion method using BBr3 (boron tribromide) as a diffusion source, and a method in which an Al paste that includes an Al powder, an organic vehicle, and the like is applied by a printing method and then the applied paste is subjected to heat treatment (firing) at a temperature of approximately 600 to 850° C. so that Al is diffused to the substrate 1, are used.
When this BSF region 6 is formed by the thermal diffusion method, preferably, a diffusion barrier of oxide film or the like is previously formed on the already-formed diffusion layer 2. If a method of printing and firing the Al paste is used, in addition that a predetermined diffusion region can be formed only on the printed surface, it is unnecessary to remove the n-type diffusion layer 2 formed at the side of the second surface simultaneously as the formation of the diffusion layer 2, and PN isolation may be performed on only the periphery at the second side surface using a laser and the like,
Note that the formation method of the BSF region 6 is not limited to the above methods, but a crystalline silicon film including an amorphous silicon hydride film, a microcrystalline silicon film, or the like may be formed using a thin-film deposition technique. Further, an i-type silicon region may be formed between the substrate 1 and the BSF region 6.
Next, the first electrode 4 (first output extraction portion 4a, first power collection unit 4b), and the second electrode 5 (second output extraction portion 5a, second power collection unit 5b) are formed as described below.
The first electrode 4 is formed, using an Ag paste obtained in paste form by adding a metal powder composed of, e.g. silver (Ag), and 10 to 30 parts by weight of an organic vehicle as well as 0.1 to 10 parts by weight of a glass frit per 100 parts by weight of Ag, for example. The Ag paste is applied on the first surface of the substrate 1, and then the first electrode 4 is formed by being fired at a maximum temperature of 600 to 850° C. for approximately several tens of seconds to several tens of minutes. A screen printing method or the like may be used as a method of application, and preferably, after the application of the paste, a solvent is evaporated at a predetermined temperature so as to dry the paste.
Next, the second electrode 5 will be described. First, the second power collection unit 5b is formed, using an Al paste including, e.g. an Al powder and 10 to 30 parts by weight of an organic vehicle per 100 parts by weight of Al. This paste is applied to almost the entire surface of the second surface of the substrate 1 except a portion in which the second output extraction portion 5a is formed. A screen printing method or the like is used as a method of application. Preferably, after the application of the paste, a solvent is evaporated at a predetermined temperature so as to dry the paste.
Next, the second output extraction portion 5a is formed, using the Ag paste obtained in paste form by adding a metal powder composed of the Ag powder and 10 to 30 parts by weight of the organic vehicle as well as 0.1 to 5 parts by weight of the glass frit per 100 parts by weight of Ag, for example. This Ag paste is applied in a previously determined form. Note that the second output extraction portion 5a and a part of the second power collection unit 5b are overlapped by applying the Ag paste on a location contacting with a part of the Al paste. A screen printing method or the like may be used as a method of application, and preferably, after the application, a solvent is evaporated at a predetermined temperature so as to dry the paste.
Then, by firing the substrate 1 in a firing furnace at a maximum temperature of 600 to 850° C. for approximately several tens of seconds to several tens of minutes, the second electrode 5 is formed on the substrate 1.
A printing method or firing method is used for forming electrodes in the above, but it is also possible to form electrodes using a plating, or a thin film formation such as vapor deposition or sputtering.
As described above, the solar cell element according to the present embodiment is manufactured.
A copper foil having a thickness of approximately 0.1 to 0.2 mm and a width of approximately 1 to 2 mm, the entire surface of which is covered by soldering is used for the inner lead 11 connecting these plurality of solar cell elements 10, and is soldered onto the first electrode 4 (first output extraction portion 4a) and the second electrode 5 (second output extraction portion 5a) of the solar cell element 10. In
Each of the above-described members is sequentially stacked, deaerated, heated and pressed in a laminator to harden the first and second fillers 13, 14 and each member is integrated, thereby obtaining the solar cell module 18, Thereafter, if desired, a frame made of such as Al may be fitted to the periphery.
Next, the structure of the first electrode 4 and the second electrode 5 of the solar cell module according to the present embodiment will be described referring to Figures.
The second electrode 5 overlaps on the first electrode 4 in a perspective plane view, and a part of the periphery of the first electrode 4 is disposed in the first opening 7a in a perspective plane view. In
As shown in
When the width A of the first opening 7a is greater than a width C of the inner lead 11, the second output extraction portion 5a is connected to only one end of the inner lead 11. Therefore, contraction stress by which the substrate near the first electrode 4 is convexly lifted is not likely to be generated. Also, the stress is dispersed by providing a plurality of first openings 7a, and thus the generation of cracks can be reduced. The width A of the first opening 7a is designed to be, e.g. 2 mm or more and 3 mm or less, and the width B of the first output extraction portion 4a is, e.g. 1.3 mm or more and 2.5 mm or less.
As shown in
These first openings 7a may be overlapped with at least a part of the entire periphery of the first electrode 4 in a perspective plane view. For instance, the first opening 7a may be formed to be surrounded on all four sides by the second electrode 5, and may be formed to be surrounded on two sides or three sides (e.g. a slit-like opening, a concave opening in a plain view, or the like). A concave opening and a slit-like opening are shown in
The first opening 7a may be formed only in the second output extraction portion 5a in the second electrode 5. Even in this case, the stress in the periphery of the first electrode 4 on the first surface of the substrate 1 is reduced in a region where this first opening 7a is formed.
Here, that the first output extraction portion 4a and the second output extraction portion 5a are “linear” indicates the case where the first output extraction portion 4a and the second output extraction portion 5a are formed to be linear with respect to the surface of the substrate 1 as a whole, including the case where they are arranged to be continuously linear without space, as well as the case where a plurality of components are arranged to be linear with space.
In
The second power collection unit 5b includes a second opening 7b in a part where the second output extraction portion 5a is located. At this time, a width F of the second opening 7b in a lateral direction N of the inner lead 11 is preferably greater than the width B of the first output extraction portion 4a. Since the solar cell element 10 does not include the first electrode 4 and the second power collection unit 5b immediately below the vicinity thereof, the stress applied to the first electrode 4 and the substrate 1 located in the vicinity thereof due to the heat contraction is reduced, and at the same time, the contact area of the second output extraction portion 5a and the substrate 1 is increased, so that the electrode intensity of the second output extraction portion 5a and the substrate 1 is maintained. The width F of the second opening is designed to be 1.5 mm or more and 2.8 mm or less, The electrode intensity refers to a load value when the electrode joined to an object is peeled off from the object by adding tension load.
Further, the width A of the first opening 7a in the lateral direction N of the inner lead 11 is preferably greater than the width F of the second opening 7b. That is, the relation of A>F>B is preferably established. Thereby, a part where the second output extraction portion 5a overlaps superimposes on the second power collection unit 5b is located apart from the first electrode 4 to which the inner lead 11 is connected, and thus the stress applied to the substrate 1 due to the heat contraction can be further reduced. When the Al paste is printed and fired so as to form the second power collection unit 5b, the BSF region 6 can be simultaneously formed to be large so that the characteristics of the solar cell element is improved.
A side surface 5at of the output extraction portion 5a and a width G of the first opening 7a are preferably smaller than the width A of the plurality of first openings 7a. The width A and the width G are widths in the lateral direction of the second output extraction portion 5a. Such a configuration reduces resistance of the second output extraction portion 5a and allows carriers collected by the second power collection unit 5b to be efficiently extracted to the second output extraction portion 5a, and thus resistance loss can be suppressed. The width G of one end of the electrode is smaller than the interval E between the plurality of first openings 7a so that the stress applied to the substrate 1 in the part where the second output extraction portion 5a overlaps with the second power collection unit 5b is reduced. The width G of one end of the electrode is designed to be, e.g. 0.75 mm or more and 2 mm or less. Here, the side surface 5at of the output extraction portion 5a of the second electrode refers to an end surface 5at along the longitudinal direction of the second output extraction portion 5a in a plane view.
As shown in
In
As shown in
As shown in
The inner lead 11 is connected to the first output extraction portion 4a or the second output extraction portion 5a with a solder, and a lead-free solder not including lead is preferred and good for environment. The problems such as chipping on very thin surface part of the substrate 1, are reduced by having the configuration of the present embodiment of the invention even when the lead-free solder is used. The lead-free solder for use may be Sn—Ag base, Sn—Ag—Cu base, Sn—Bi base, Sn—Bi—Ag base, Sn—Cu—Bi base, Sn—Cu base, Sn—Zn—Bi base, or Sn—Sb base.
In the above preferred embodiment, the example of connecting the first output extraction portion 4a of the substrate 1 and the adjacent second output extraction portion 5a of the substrate 1 with a single inner lead 11 has been described, but it does not have to be the same necessarily. For instance, as shown in
Even in this case, thermal influence when each of the inner leads 11A, 11B is connected by soldering or the like is reduced in the region of the first opening 7a, and thus the same effect as above can be obtained.
A solar cell module according to a second embodiment will be described.
The second embodiment is described, focusing on the differences with the above first embodiment.
This solar cell module includes a second electrode 205 corresponding to the above second electrode 5 on the second surface of the substrate 1.
The second electrode 205 includes a second output extraction portion 205a corresponding to the above second output extraction portion 5a and a second power collection unit 205b corresponding to the above second power collection unit 5b.
The second power collection unit 205b is formed to spread on a surface so as to cover the substantially entire back surface of the substrate 1, and the second output extraction portion 205a is formed to extend to be linear.
In a part of the second power collection unit 205b where the second output extraction portion 205a is formed, a second opening 207h is formed to be substantially linear. However, a width of the second output extraction portion 205a is greater than that of the second opening 207b. Accordingly, the second output extraction portion 205a makes contact with the substrate 1 in the second opening 217b, and makes contact with the second power collection unit 205b at both sides of the second opening 207b.
The second opening 207b is divided in the central part of the substrate 1 in the longitudinal direction, and the second power collection unit 205b is formed therein. This part of the second power collection unit 205b is exposed to the back surface of the substrate 1 through a third opening 207c described later.
A width W2 of a part 207b2 of the second opening 207b closer to the periphery of the substrate 1 is formed to be greater than a width W1 of a part 207b1 of the second opening 207b closer to the substantially center of the substrate 1. Thereby, generation of cracks is reduced in the end part of the second output extraction portion 205a. That is, the vicinity of the end part of the second output extraction portion 205a is opened to outside (in other words, in a region of the central part of the inner lead, the force of heat contraction of the inner lead is applied to the both sides of the region, so that contraction force is easily applied to the inner lead uniformly, but in a region near the end of the inner lead, heat contraction of the inner lead is applied to only one side of the region), so that ununiformity of heat contraction degree is easily caused to generate cracks, when soldering and the like is performed on the second output extraction portion 205a. Therefore, an overlapping region of the second output extraction portion 205a and the second power collection unit 205b is made smaller near the end part of the second output extraction portion 205a by widening the part 207b2 of the second opening 207b of the second power collection unit 205b, so that influence of heat stress of the second output extraction portion 205a and the second power collection unit 205b is difficult to affect on the substrate 1, thereby further reducing the generation of cracks.
Of course, the widths W1 and W2 of the parts 207b1 and 207b2 of the second opening 207b are greater than a width W10 of the first output extraction portion 204a which is a first electrode of the front side of the substrate 1. Thereby, the second power collection unit 205b is not disposed immediately below both edge parts of the first output extraction portion 204a in a perspective plane view, further reducing the influence of heat contraction caused by the second power collection unit 205b. Further, in a part without the first openings 207a1 and 207a2, the contact area of the second output extraction portion 205a and the substrate 1 is made larger, thereby, maintaining the electrode intensity of the second output extraction portion 205a.
The second output extraction portion 205a is formed to be substantially linear such that a width of the lateral direction is substantially the same in the substantially entire longitudinal direction. The second output extraction portion 205a includes the first openings 207a1 and 207a2 corresponding to the above first opening 7a. A plurality of first openings 207a1 and 207a2 are provided along the longitudinal direction of the second output extraction portion 205a with intervals. Each of the first openings 207a1 and 207a2 has widths W3 and W4 greater than the width W10 of the first output extraction portion 204a similarly to the above first opening 7a. Accordingly, the generation of cracks due to the heat stress of the second electrode 205 is reduced.
In each part of the longitudinal direction of the second output extraction portion 205a, the widths W3 and W4 of the first openings 207a1 and 207a2 are greater than the widths W1 and W2 of the second opening 207b. Here, in the substantially middle part of the longitudinal direction of the second output extraction portion 205a, the width W3 of the first opening 207a1 is greater than the width W1 of a middle part 207b1 of the longitudinal direction of the second opening 207b, and in the end part of the second output extraction portion 205a, the width W4 of the first opening 207a2 is greater than the width W2 of the end part 207b2 of the longitudinal direction of the second opening 207b. That is, the relation of W3 or W4 (width of the first opening)>W1 or W2 (width of the second opening)>W10 (width of the first output extraction portion 204a) is preferably established. Thereby, the overlapping part of the second power collection unit 205b and the second output extraction portion 205a is provided outside the both edge parts of the first output extraction portion 204a, so that the influence of heat contraction of the second power collection unit 205b and the second output extraction portion 205a hardly acts on the vicinity of the first output extraction portion 204a. Further, even the connection part of the second output extraction portion 205a and the inner lead is provided outside the both edge parts of the first output extraction portion 204a, so that thermal influence of the connection work hardly acts on the vicinity of the first output extraction portion 204a. As a result, the generation of cracks in the substrate 1, particularly, the generation of cracks in the vicinity of the first output extraction portion 204a is further reduced.
Similarly to the above first embodiment, in the longitudinal direction of the second output extraction portion 205a, a length L1 of the above first openings 207a1 and 207a2 is set to be longer than a length L2 between the first openings 207a1 and 207a2. Thereby, the stress caused by the second power collection unit 205b and affected on the substrate 1 is dispersed, and the generation of cracks in the substrate 1 is further efficiently reduced.
In the longitudinal direction of the second output extraction portion 205a, a width W4 of at least one (here two) of the first openings 207a2 closer to the periphery of the substrate 1 is greater than a width W3 of at least one (here many) of the first openings 207a1 closer to the center of the substrate 1. Thereby, the possibility of connecting the inner lead to the second output extraction portion 205a at both sides of the first opening 207a2 is reduced, thereby reducing the influence of thermal stress acting on the substrate 1. That is, from the viewpoint of preventing the influence of thermal stress from affecting on the substrate 1 when the inner lead is soldered to the second output extraction portion 205a, the inner lead is preferably not connected to the second output extraction portion 205a in the first openings 207a1 and 207a2. However, in terms of the accuracy of inner lead arrangement and the like, in the end part of the second output extraction portion 205a, misalignment of the inner lead in the lateral direction of the second output extraction portion 205a tends to be greater. Then, by forming the first opening 207a2 to be wider, the inner lead is placed in the first opening 207a2 even when the inner lead is misaligned as above. That is, the possibility of connecting the inner lead to the second output extraction portion 205a at both sides of the first opening 207a2 is reduced. Thereby, the influence of thermal stress acting on the substrate 1 is reduced.
If the inner lead is connected to the second output extraction portion 205a at both sides of the first opening 207a2, it is possible to produce a state where only one side thereof is connected. Thereby, the influence of thermal stress on the substrate 1 is reduced, comparing to the case of connecting the inner lead to the second output extraction portion 205a at both sides of the first opening 207a2.
The middle part of the longitudinal direction of the second output extraction portion 205a includes a third opening 207c exposing the second power collection unit 205b, similarly to the above third opening 7c. Thereby, similarly to the description referring to
The end part near the periphery of the substrate 1 in the second output extraction portion 205a is formed in an inclination side 205a1 inwardly inclining toward the end part. Thereby, peeling at the end part of the second output extraction portion 205a is to be reduced.
The second output extraction portion 205a includes a fourth opening 207d smaller than the first openings 207a1 and 207a2 in the periphery of the substrate 1, here, closer to the periphery of the substrate 1 than the first openings 207a1 and 207a2. The fourth opening 207d is served for the thickness management and the like at the end part of the substrate of the second output extraction portion 205a, similarly to the fourth opening 7d described referring to
At the both sides of the second output extraction portion 205a, third output extraction portions 205c1 and 205c2 corresponding to the third output extraction portion 5c in the first preferred embodiment are connected. The third output extraction portions 205c1 and 205c2 have a width smaller than a portion sandwiched between a side surface of the second output extraction portion 205a and the first opening 207a1, similarly to the third output extraction portion 5c in the first preferred embodiment. The third output extraction portions 2051c and 205c2 may have, in at least one of the first openings 207a1, a width smaller than a portion sandwiched between that first opening 207a1 and the side surface of the second output extraction portion 205a, and it is not necessary to have the similar relation in all of the first openings 207a1 and 207a2. For instance, the third output extraction portion 2051c may have a width greater than a portion sandwiched between the first opening 207a2 at end part and the side surface of the second output extraction portion 205a.
In the plurality of third output extraction portions 205c1 and 205c2 provided to each of the both sides of the second output extraction portion 205a, a width W6 of the third output extraction portion 205c2 provided in the end part of the longitudinal direction of the second output extraction portion 205a (i.e. near the periphery of the substrate 1) is smaller than a width W5 of the third output extraction portion 205c1 provided in the middle part of the longitudinal direction of the second output extraction portion 205a (i.e. substantially middle part of the substrate 1). As a result, here, an opening shape between the third output extraction portions 205c2 is larger than an opening shape between the third output extraction portions 205c1, but these opening shapes may be substantially same.
The above configuration reduces the influence of the thermal stress in the end part of the second output extraction portion 205a, and also reduces the peeling of the third output extraction portion 205c2, the generation of cracks of the substrate 1, and the like. That is, since the vicinity of the end part of the second output extraction portion 205a is opened toward outside, when soldering and the like is performed on the second output extraction portion 205a, the ununiformity of heat contraction degree is easily caused. Therefore, by reducing the contact area of the third output extraction portion 205c2 and the second power collection unit 205b in the vicinity of the second output extraction portion 205a as much as possible, the thermal stress due to the third output extraction portion 205c2 hardly affects on the substrate 1, further reducing the peeling of the third output extraction portion 205c2 and the generation of cracks of the substrate 1.
While the present invention is not limited to each of the above preferred embodiments, it is therefore understood that numerous modifications and variations can be devised without departing from the scope of the invention.
For instance, when the first electrode 4 and the second electrode 5 (second output extraction portion 5a, second power collection unit 5b) are formed by applying the Ag paste on the front surface and the Al paste and the Ag paste on the back surface, firing may be performed either simultaneously or separately. The order of forming electrodes is not necessarily specified. Also, the example of forming the second output extraction portion 5a by forming the second power collection unit 5b and thereafter applying the Ag paste has been described, but the reverse may do.
Further, drying after applying a conductive paste may be omitted if there is not a problem that the previous conductive paste is adhered to a work table or screen of a printer when applying the next conductive paste.
The matters described in the above first embodiment, the matters described in the second embodiment, and the matters described in the variations can be appropriately combined unless opposing to one another.
Number | Date | Country | Kind |
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2007-196946 | Jul 2007 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2008/063704 | 7/30/2008 | WO | 00 | 1/29/2010 |