Patent Grant
7741558
This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2006-198721, filed on Jul. 20, 2006; the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a solar cell module which includes a photovoltaic element, a light receiving surface side protective member disposed above a light receiving surface of the photovoltaic element, and a back surface side protective member disposed above a back surface opposite to the light receiving surface of the photovoltaic element.
2. Description of the Related Art
Heretofore, a photovoltaic element, which includes a transparent conductive film formed of indium oxide layers, is known. For such an indium oxide layer, ITO (Indium Tin Oxide) being In203 to which SnO2 is added as impurities has been widely used because of its high conductivity and of good workability.
When using the above-described ITO as a transparent conductive film, it is known that the arithmetic mean roughness (Ra) of an ITO surface is made small so that it is 2.0 nm or less, to maintain low resistance and low light absorption (refer to, for example, Japanese Patent Application Laid-open Publication No. 2005-175160).
Further, a technology is disclosed in which, by using an indium oxide layer to which tungsten (W) is added as impurities, resistance and light absorption lower than those of the ITO can be maintained (refer to, for example, Japanese Patent Application Laid-open Publication No. H7-278791).
As described above, on the indium oxide layer, many trials have been conducted to achieve low resistance and high light transmittance.
On the other hand, when mounting a photovoltaic element on a solar cell module, there is high possibility that it is open to the outside air for a long period. However, no study has been made on weather resistance such as moisture resistance under the above condition. Particularly, when using a film as the back surface side protective member disposed above a back surface of a photovoltaic element, the entering of moisture due to deterioration of the film is considered. Accordingly, it is desired that a photovoltaic element having excellent moisture resistance be developed.
An aspect of the present invention is the provision of a solar cell module which includes a photovoltaic element, a light receiving surface side protective member disposed above a light receiving surface of the photovoltaic element, and a back surface side protective member disposed above a back surface opposite to the light receiving surface of the photovoltaic element, and in which the photovoltaic element includes a first transparent conductive film formed on a first surface facing the back surface side protective member and a second transparent conductive film formed on a second surface facing the light receiving surface side protective member; and an arithmetic mean roughness on a surface of the first transparent conductive film is larger than an arithmetic mean roughness on a surface of the second transparent conductive film.
According to the solar cell module of the above-described invention, the arithmetic mean roughness of the first transparent conductive film disposed above the back surface side protective member of the photovoltaic element is made larger than that of the second transparent conductive film disposed above the light receiving surface side protective member, so that a weather resistance on the side of the first transparent conductive film can be increased than that on the side of the second transparent conductive film. It is therefore possible to reduce an influence of moisture on a property of the photovoltaic element, the moisture permeating through the back surface side protective member and entering the solar cell module. The arithmetic mean roughness of the second transparent conductive film disposed above the side of the light receiving surface side protective member can be made smaller than that of the first transparent conductive film disposed above the side of the back surface side protective member, so that the light transmittance and conductivity of the second transparent conductive film can be more enhanced than those of the first transparent conductive film. Thus, light which permeates through the light receiving surface side protective member and which enters the solar cell module can be effectively brought into the photovoltaic element, and concurrently a resistance loss can be also made small which loss occurs when taking out a light generation carrier generated in the photovoltaic element through the second transparent conductive film. As described above, a solar cell module having a high output and an excellent weather resistance can be provided.
In a solar cell module of another aspect of the present invention, it is preferable that a main constituent of the first transparent conductive film be indium oxide.
According to the above-described solar cell module, a further enhancement of the weather resistance can be achieved by using the indium oxide that is not easily dissolved into water.
In a solar cell module of another aspect of the present invention, it is preferable that the arithmetic mean roughness (Ra) on the surface of the first transparent conductive film be 0.5 nm or more.
According to the above-described solar cell module, an excellent weather resistance can be obtained.
In a solar cell module of still another aspect of the present invention, it is preferable that the first transparent conductive film be formed of indium oxide to which tungsten is added and that the arithmetic mean roughness (Ra) on the surface of the first transparent conductive film be 1.0 nm or less.
According to the above-described solar cell module, since the first transparent conductive film is formed of tungsten doped indium oxide tungsten, the arithmetic mean roughness (Ra) can made small, and additionally since the arithmetic mean roughness (Ra) is 1.0 nm or less, the conductivity and light transmittance along with the weather resistance can be enhanced.
In a solar cell module of a still further aspect of the present invention, it is preferable that the second transparent conductive film be formed of indium oxide to which tungsten is added and that the arithmetic mean roughness (Ra) on the surface of the second transparent conductive film be 0.5 nm or less.
According to the above-described solar cell module, since the second transparent conductive film is formed of indium oxide to which tungsten is added, the arithmetic mean roughness (Ra) can made small, and additionally since the arithmetic mean roughness (Ra) is 0.5 nm or less, the conductivity and light transmittance can be further enhanced.
In a solar cell module of a still yet further aspect of the present invention, it is preferable that: the photovoltaic element further includes a one-conductive type crystalline semiconductor layer, a first substantially intrinsic amorphous semiconductor layer which is formed on a surface of the crystalline semiconductor layer and an other-conductive type amorphous semiconductor layer which is formed on another surface of the crystalline semiconductor layer, and a second substantially intrinsic amorphous semiconductor layer which is formed on another surface of the crystalline semiconductor layer and a one-conductive type amorphous semiconductor layer which is formed on the second substantially intrinsic amorphous semiconductor layer; and that the first transparent conductive film is formed on either the other-conductive type amorphous semiconductor layer or the one-conductive type second amorphous semiconductor layer. Here, the “amorphous semiconductor layer” contains not only amorphous but also crystal particles layers. For example, its concept is to also contain a microcrystal semiconductor.
According to the above-described solar cell module, the amorphous semiconductor layer exists between the crystalline semiconductor layer and the first transparent conductive film, so that the first transparent conductive film is formed without being influenced by the orientation of the crystalline semiconductor layer. Thus, the arithmetic mean roughness (Ra) of the first transparent conductive film is optimally controlled, and the first transparent conductive film having excellent conductivity and light transmittance can be easily obtained.
Hereinafter, a embodiment of the present invention will be described by using the drawings. In the following description of the drawings, the same or similar reference numerals are given to the same or similar components. It should be noted that the drawings are schematic ones, each dimensional ratio or the like shown in the drawings are different from those of actual ones. For this reason, specific dimensions or the like should be determined with reference to the following description. Moreover, as a matter of course, the drawings include part where there are differences among the drawings in terms of dimensional relationships and ratios.
(Solar Cell Module)
A solar cell module 11 according to the embodiment includes a plurality of photovoltaic elements 1 as shown in
Each one of the plurality of photovoltaic elements 1 is electrically connected to one another with a flat tab 12 formed of copper foil. The tab 12 is connected at one end-side thereof to an electrode 6 (refer to
The light receiving surface side protective member 14 is disposed on the light receiving surface of the sealing material 13. The light receiving surface side protective member 14 is constituted by a transparent member such as a glass substrate or a plastic plate.
The back surface side protective member 15 is disposed on the back surface of the sealing material 13. The back surface side protective member 15 is formed from a resin film or a laminated body including a resin film and a metal foil. The laminated body can be, for example, constituted by a triplex structure of PET (Poly Ethylene Terephtalate)/aluminum foil/PET.
(Photovoltaic Element)
Next, a configuration of the photovoltaic element according to the present embodiment is described with reference to
The photovoltaic element 1 according to the present embodiment includes an n-type single crystal silicon substrate 2 having an electrical resistivity of approximately 1 Ω·cm and a thickness of approximately 200 μm, as shown in
On the light receiving surface of the n-type single crystal silicon substrate 2, a substantially intrinsic (i-type) amorphous silicon layer 3 having a thickness of roughly 5 nm is formed. Incidentally, this i-type amorphous silicon layer 3 is an example of a “first substantially intrinsic amorphous semiconductor layer” of the present invention.
Further, on a light receiving surface of the i-type amorphous silicon layer 3, a p-type amorphous silicon layer 4 having a thickness of approximately 5 nm is formed.
Further, on a light receiving surface of the p-type amorphous silicon layer 4, an indium oxide layer 5 having a thickness of approximately 100 nm is formed. Incidentally, the indium oxide layer 5 is an example of the “second transparent conductive film” of the present invention.
Still further, the indium oxide layer 5 is formed of indium oxide to which tungsten is added. As shown in
On a predetermined area of the light receiving surface of the indium oxide layer 5, a comb-like electrode 6 is formed. The electrode 6 is formed of silver (Ag) and resin binder. In addition, the resin binder constituting the electrode 6 contains epoxy resin. The content of the epoxy resin in the resin binder is in the range of approximately 60 percent by mass to approximately 100 percent by mass.
On the back surface of the n-type single crystal silicon substrate 2, a substantially intrinsic (i-type) amorphous silicon layer 7 having a thickness of approximately 5 nm is formed. The i-type amorphous silicon layer 7 is an example of a “second substantially intrinsic amorphous semiconductor layer” of the present invention.
Further, on a back surface of the i-type amorphous silicon layer 7, an n-type amorphous silicon layer B having a thickness of approximately 5 nm is formed. As described above, on the back surface of the n-type single crystal silicon substrate 2, the i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 are formed in sequence, whereby a structure so-called a BSF (Back surface Field) structure is formed.
Further, on a back surface of the n-type amorphous silicon layer 8, an indium oxide layer 9 having a thickness of approximately 100 nm is formed. Incidentally, the indium oxide layer 9 is an example of the “first transparent conductive film” of the present invention. Further, the indium oxide layer 9 is formed of indium oxide to which tungsten is added. As shown in
On a predetermined area of the back surface of the indium oxide layer 9, a comb-like electrode 10 is formed. The electrode 10 is formed of electrically conductive paste.
Further, configurations except the above-mentioned configurations of the i-type amorphous silicon layer 7, the n-type amorphous silicon layer 8, the indium oxide layer 9, and the electrode 10 formed on the back surface of the n-type single crystal silicon substrate 2 are the same as configurations of the i-type amorphous silicon layer 3, the p-type amorphous silicon layer 4, the indium oxide layer 5, and the electrode 6 formed on the light receiving surface of the n-type single crystal silicon substrate 2.
Further, in the present embodiment, the arithmetic mean roughness on the surface of the indium oxide layer 9 is larger than that on the surface of the indium oxide layer 5.
(Operation and Effect)
The photovoltaic element 1 of the present embodiment includes the indium oxide layer 9 formed on the surface facing the back surface side protective member 15, and the indium oxide layer 5 formed on the surface facing the light receiving surface side protective member 14; and the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 9 is larger than the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 5.
For a conventional photovoltaic element, a transparent conductive film having a small arithmetic mean roughness (Ra) has been studied in order to simultaneously have two characteristics of high light transmittance and low resistance. On the other hand, the photovoltaic element 1 of the present embodiment is equipped with the indium oxide layer 9 having intentionally a large arithmetic mean roughness (Ra). It is, therefore, possible to suppress the reduction of the adhesiveness between the indium oxide layer 9 and the electrode 10 caused by the filtering of moisture into a contacting interface between them, the moisture transmitting the back surface side protective member 15 and entering the solar cell module 11. As a result, a solar cell module having an excellent weather resistance can be provided.
Further, since the arithmetic mean roughness on the surface of the indium oxide layer 5 can be made small as in the past, two characteristics of high transmittance and low resistance can be maintained at the same time. Therefore, it is possible to cause light to effectively transmit the photovoltaic element 1 and reduce resistance loss occurring when taking out photogenerated carriers generated in the photovoltaic element 1. As a result, a solar cell module having excellent output characteristics can be provided.
Further, when the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 9 is from 0.5 nm to 1.0 nm, low resistance and high light transmittance along with the weather resistance can be simultaneously improved. In the same manner as above, when the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 5 is 0.5 nm or less, conductivity and light transmittance can be, further, improved.
Further, the weather resistance of the indium oxide layer 9 formed on the back surface of the photovoltaic element 1 can be, further, improved since indium oxide not easily dissolved into water is used as a major constituent.
Further, since main constituents of the indium oxide layer 9 formed on the back surface of the photovoltaic element 1 and the indium oxide layer 5 formed on the light receiving surface of the photovoltaic element 1 are indium oxide to which tungsten is added, the arithmetic mean roughness (Ra) on surfaces thereof can be made small.
The photovoltaic element 1 of the present embodiment includes the n-type single crystal silicon substrate 2, the i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8, which are arranged in this sequence, and the indium oxide layer 9 is formed on the back surface of the n-type amorphous silicon layer 8. In this manner, the i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 exist between the indium oxide layer 9 and the n-type single crystal silicon substrate 2. Accordingly, it is possible to control the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 9 without being influenced by the orientation of the single crystal silicon substrate 2. Thus, the indium oxide layer 9, conductivity and light transmittance of which are improved, can be easily formed with a good yield.
Further, as described later, in a method of manufacturing the photovoltaic element 1 of the present embodiment, pressure of a mixed gas containing at least oxygen is adjusted, so it is possible to form the indium oxide layer 9 having an arithmetic mean roughness (Ra) of 0.5 nm or less. Heretofore, it has been difficult to adjust the arithmetic mean roughness (Ra) to be 0.5 nm or less, and confirmation of data about 0.5 nm or less has not been made. In the present embodiment, since pressure of a mixed gas used when forming the indium oxide layer 9 is adjusted, the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 9 can be adjusted to be 0.5 nm or less. Consequently, reliable data can be secured. Data are referred to the example to be described later.
(Method of Manufacturing Photovoltaic Element)
A method of manufacturing a photovoltaic element 1 according to the present embodiment is described below with reference to
First, as shown in
Next, using an RF plasma CVD method, an i-type amorphous silicon layer 3 having a thickness of approximately 5 nm and a p-type amorphous silicon layer 4 having a thickness of approximately 5 nm are formed in this sequence on the light receiving surface of the n-type single crystal silicon substrate 2.
Further, specific conditions of forming the i-type amorphous silicon layer 3 and the p-type amorphous silicon layer 4 by the RF plasma CVD method are given as follows: frequency=13.56 MHz; forming temperature=100 to 300 degrees Celsius; reaction pressure=5 to 100 Pa and RF power=1 to 500 W/cm2. As p-type dopant, B, Al, Ga, In and the like being III-group elements are cited. Chemical compound gas containing at least one of the above-described elements is mixed in source gas such as SiH4, whereby a conductivity type of the amorphous silicon can be made of p-type by controlling a valency electron.
Next, an i-type amorphous silicon layer 7 having a thickness of approximately 5 nm and an n-type amorphous silicon layer 8 having a thickness of approximately 5 nm are formed in this sequence on the back surface of the n-type single crystal silicon substrate 2.
Further, the i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 are respectively formed in the same processes as those used for the i-type amorphous silicon layer 3 and the p-type amorphous silicon layer 4. Further, as n-type dopant, P, N, As, Sb and the like being V-group elements are cited. Chemical compound gas containing at least one of the above-described elements is mixed in source gas such as SiH4, whereby a conductivity type of the amorphous silicon can be made of n-type by controlling a valency electron.
Incidentally, as methods of forming an amorphous silicon layer, known methods such as an evaporation method, a sputtering method, a microwave plasma CVD method, an ECR method, a thermal CVD method and an LPCVD method can be used. Further, as an amorphous silicon layer, Si, SiGe, SiGeC, SiC, SiN, SiGeN, SiSn, SiSnN, SiSnO and the like are used, which each are amorphous or microcrystal containing at least one of hydrogen and fluorine.
Subsequently, as shown in
Here, pressure is controlled so that the arithmetic mean roughness (Ra) on surfaces of the indium oxide layers 5 and 9 is adjusted. For example, when forming the indium oxide layer 5 having a thickness of 100 nm with pressure maintained at 1.3 to 1.7 Pa, the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 5 is 0.5 or less. Further, when forming the indium oxide layer 9 having a thickness of 100 nm with pressure maintained at 1.7 to 1.8 Pa, the arithmetic mean roughness (Ra) on the surface of the indium oxide layer 9 is from 0.5 to 1.0 nm.
Further, the indium oxide layers 5 and 9 can be formed by a sputtering method. At this time, as in the case of the ion plating method, it is preferable that ion energy entering the n-type single crystal silicon substrate 2 be sufficiently reduced so that it is 100 eV or less. For example, it is preferable that the indium oxide layers 5 and 9 are formed by using an RF sputtering method in which a magnetic field of 3000 Gauss or more is applied.
Next, on the light receiving surface of the indium oxide layer 5 and on a predetermined area of the back surface of the indium oxide layer 9, Ag paste in which silver (Ag) is kneaded in epoxy resin is formed in a height of 10 to 30 μm and in a width of 100 to 500 μm. The Ag paste is, thereafter, burned at 200 degrees Celsius for eighty minutes so that it is cured. Thus, the electrodes 6 and 10 are formed. The electrodes 6 and 10 each include a comb-like collector electrode having a plurality of branches being parallel to each other, and a bus bar electrode collecting electric flowing in the comb-like collector electrode.
In this way, the photovoltaic element 1 of the present embodiment shown in
(Manufacturing Method of Solar Cell Module)
Next, a plurality of photovoltaic elements 1 fabricated in the above-described method are prepared.
Subsequently, a tab 12 (refer to
Next, the sealing material 13 formed from an EVA sheet is put on the light receiving surface side protective member 14 formed from a glass substrate, and, thereafter, the plurality of photovoltaic elements 1 connected to each other with the tabs 12 are put thereon. Thereafter, the sealing material 13 formed from an EVA sheet is, further, put thereon, and, subsequently, the back surface side protective member 15 formed of PET is put thereon. That is, the back surface side protective member 15 is disposed on a side on which an indium oxide layer 9, the arithmetic mean roughness (Ra) on the surface thereof being from 0.5 nm to 1.0 nm, is formed, and a light receiving surface side protective member 14 is disposed on a side on which an indium oxide layer 5, the arithmetic mean roughness (Ra) on the surface thereof being 0.5 nm or less, is formed.
Thereafter, the light receiving surface side protective member 14, the sealing material 13, the plurality of photovoltaic elements 1 which are connected to each other with the tabs 12 and the back surface side protective member 15, are integrated with under pressure while being heated.
In this way, the solar cell module 11 of the present embodiment shown in
Although the present invention is described using the above-described embodiment, it is to be understood that the present invention is not limited to description and drawings constituting part of this disclosure. From this disclosure, various embodiments and the operations thereof will be obvious to those skilled in the art.
For example, although the above-described embodiment is described for the case where a photovoltaic body formed from an n-type single crystal silicon substrate is used, a photovoltaic body formed from a p-type single crystal silicon substrate may be used.
For example, the same effect can be obtained even when applying the present invention to a photovoltaic element in which a pn junction is formed by directly connecting a single crystal or polycrystal semiconductor substrate having a one-conductive type and an amorphous semiconductor having an other conductive type, a photovoltaic element in which a pn junction is formed by forming an other type area on a surface of a single crystal or polycrystal semiconductor substrate having a one-conductive type using a thermal diffusion method or the like, and the like.
Further, although the above-described embodiment is described using a photovoltaic element with an HIT structure as an example, the same effect can be obtained even when the present invention is applied to a photovoltaic element having no HIT structure.
Further, as a transparent conductive film, although an indium oxide film added with tungsten is used, the present invention is not limited to this case, and an indium oxide layer added with another material may be used. For example, materials such as Sn, Mo, Ti, Si, As, Ca, Cu, F, Ge, Mg, S, and Zn may be added, or a plurality of these materials may be added.
Further, a material for forming the transparent conductive film is not limited to an indium oxide film, and, alternatively, another material such as a zinc oxide film or a tin oxide film may be used.
As described above, various embodiments not described in this application are also included in the scope of the present invention. Accordingly, the scope of the present invention is defined by the appended claims rather than by the forgoing description.
Although a photovoltaic element according to the present invention is specifically described below with reference to an example, the present invention is not limited to the following example, and various changes may be made therein without departing from the spirit of the present invention.
(Relationship Between Arithmetic Mean Roughness and Pressure)
First, to investigate a relationship between pressure of forming an indium oxide layer and an arithmetic mean roughness (Ra), pressure applied when forming an indium oxide layer is changed, and the arithmetic mean roughness (Ra) on a surface of the indium oxide layer is measured. To be more precise, a sintered body of In2O3 powder in which 3 weight percent of WO3 powder is mixed is used as a target, whereby an indium oxide layer is formed on a mirror silicon substrate by an ion plating method. In this manner, the mixing-in of the WO3 powder enables the value of Ra to be smaller than that obtained when mixing SnO2 or the like. Under the condition of forming that a mixed gas of Ar and O2 is caused to flow and pressure is changed from 1.6 Pa to 2.0 Pa, an indium oxide layer of a thickness of 30 nm is formed, and the arithmetic mean roughness (Ra) on a surface of the indium oxide layer is measured. Further, while changing pressure from 1.2 to 2.0 Pa, a indium oxide layer having a thickness of 100 nm is formed, and the arithmetic mean roughness (Ra) on a surface of the indium oxide layer is measured. Incidentally, the arithmetic mean roughness (Ra) was measured using an AFM (nanoscope IIIa manufactured by Nihon Veeco K.K.) according to the Japanese Industrial Standards (JIS B 0601-1994).
Obtained results are shown in
Further, it can be seen that an indium oxide layer having a thickness of 30 nm tends to have larger arithmetic mean roughness (Ra) than an indium oxide layer having a thickness of 100 nm, namely it was found out that thinning of a film causes the arithmetic mean roughness (Ra) to be larger.
Incidentally, a specific resistance of this indium oxide layer is from 3×10−4 to 8×10−4 Ωcm.
(Evaluation of Arithmetic Mean Roughness (Ra) on a Surface of a Transparent Conductive Film on a Back Surface Side)
Next, a transparent conductive film (the indium oxide layer 5 of
Here, the solar cell module 11 having the structure shown in
Results are shown in
As shown in
Results shown in
It is considered that the increase of the degree of adhesion is effected because Ra is made large, thereby surface roughness is increased so that an area of adhesion is increased, and because resin of the collector electrode is infiltrated deep into a contacting surface of the transparent conductive film, thus creating an anchor effect. The reason why no difference is found in weather resistances in the cases where Ra is 0.5 or above, is because a factor other than the reduction of a property by an adhesive force between the collector electrode and the cell is dominant. Further, the warp of the cell to be described later is also one of the factors.
Here, properties required for the transparent conductive film are high light transmittance and low resistance. The light transmittance has an influence on Isc (short circuit current) of properties of the photovoltaic element, and the higher the light transmittance, the larger the Isc. The resistance has an influence on F.F. (fill factor), and the smaller the resistance, the larger the F.F. Accordingly, by setting the value of Isc×F.F. as an index, a change in properties of the photovoltaic element due to the transparent conductive film can be evaluated.
As shown in
(Evaluation of Arithmetic Mean Roughness (Ra) on a Surface of a Transparent Conductive Film on a Light Receiving Surface Side)
The same above studies have been also conducted on Ra of the transparent conductive films on a light receiving surface side. Ra of the transparent conductive film on the light receiving surface side is changed given that Ra of the transparent conductive film on the back surface side is 1.0 nm that provides excellent performance in the properties of the weather resistance and the outputs.
Results are shown in
(Relationship Between Arithmetic Mean Roughness (Ra) of a Surface of a Transparent Conductive Film on a Back Surface Side and Warp Due to Heat)
Next, on an effect of the transparent conductive film on the back surface side, an influence of warp due to heat has been also studied. A photovoltaic element is put on a hot plate and heated at 150 degrees Celsius for 20 minutes. Evaluations were conducted on two samples, one having the lowest Ra (relatively low weather resistance) used in
Results by visual observation showed that although no warp was observed for the sample of Ra=1.5 nm, a warp was observed for the sample having the lowest Ra. To be more precise, a warp on the order of 1 to 2 mm was observed for a photovoltaic element of approximately 10 cm square.
From this fact, it is inferred that occurrence of a warp is checked for a sample in which the transparent conductive film on the back surface has a large Ra. It is inferred that once a warp occurs in a photovoltaic element, a load tends to occur between a transparent conductive film and a collector electrode, and a detachment tends to occur due to a reduction of an adhesive force on the back surface in which there is a large quantity of moisture. It is also inferred that the transparent conductive film having the Ra of 0.5 nm or more is made, and thereby, occurrence of a warp is checked, so that high weather resistance is achieved.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2006-198721 | Jul 2006 | JP | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 5718773 | Shiozaki | Feb 1998 | A |
| 6388301 | Tawada et al. | May 2002 | B1 |
| 20040013899 | Abe | Jan 2004 | A1 |
| 20050126625 | Yamamoto et al. | Jun 2005 | A1 |
| Number | Date | Country |
|---|---|---|
| 1 542 290 | Jun 2005 | EP |
| 06-318724 | Nov 1994 | JP |
| 7-83131 | Sep 1995 | JP |
| 07-278791 | Oct 1995 | JP |
| 2002-335003 | Nov 2002 | JP |
| 2004-221368 | Aug 2004 | JP |
| 2005-175160 | Jun 2005 | JP |
| 2005-217148 | Aug 2005 | JP |
| 2005-268239 | Sep 2005 | JP |
| 0204761 | Jan 2002 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 20080023068 A1 | Jan 2008 | US |
