This application claims priority to and the benefit of Korean Patent Application No. 10-2011-0035463 filed on Apr. 18, 2011 which is hereby incorporated by reference for all purposes as if fully set forth herein.
1. Field of the Invention
Exemplary embodiments of the present invention relate to a solar cell.
2. Discussion of the Background
Solar cells convert sunlight energy into electrical energy, and are important clean energy or next-generation energy sources for replacing fossil energy that causes a greenhouse effect due to discharge of CO2 and nuclear energy that contaminates the earth environment, such as through air pollution due to radioactive waste.
The solar cells basically generate electricity using two kinds of semiconductors: a P-type semiconductor and an N-type semiconductor. When the solar cells are used as a light absorbing layer, they are classified into various types depending on the materials used.
The solar cell has a general structure in which a front transparent conductive layer, a PN layer, and a rear reflecting electrode layer are deposited on a substrate in sequence. When sunlight is incident to the solar cell of the structure, electrons are collected on the N layer and holes are collected on the P layer thereby generating a current.
A portion of the solar light is reflected while passing through the transparent electrode such that light absorption efficiency of the solar cell is decreased.
The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
Exemplary embodiments of the present invention provide a solar cell with increased light absorption efficiency.
Additional features of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention.
An exemplary embodiment of the present invention discloses a solar cell including: a first reflective electrode layer and a second transparent electrode layer facing each other; a P-type light absorbing layer and a N-type light absorbing layer disposed between the first reflective electrode layer and the second transparent electrode layer; and a plurality of nanoparticles disposed at an interface between the first reflective electrode layer and the P-type light absorbing layer.
An exemplary embodiment of the present invention also discloses a solar cell including: a first reflective electrode layer and a second transparent electrode layer facing each other; a light absorbing layer between the first reflective electrode layer and the second transparent electrode layer; and a plurality of nanoparticles disposed on the second transparent electrode layer, wherein a space between the nanoparticles is less than about 1000 nm, and the size of the nanoparticles is more than about 50 nm.
An exemplary embodiment of the present invention also discloses a solar cell including: a first reflective electrode layer and a second transparent electrode layer facing each other; a light absorbing layer between the first reflective electrode layer and the second transparent electrode layer; and a plurality of nanoparticles disposed inside the second transparent electrode layer, wherein a space between the nanoparticles is less than about 1000 nm, and the size of the nanoparticles is more than about 50 nm.
An exemplary embodiment of the present invention also discloses a solar cell includes: a first reflective electrode layer and a second transparent electrode layer facing each other; a P-type light absorbing layer and an N-type light absorbing layer disposed between the first reflective electrode layer and the second transparent electrode layer; and a plurality of nanoparticles disposed inside the N-type light absorbing layer.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the principles of the invention.
The invention is described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure is thorough, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity Like reference numerals in the drawings denote like elements.
It will be understood that when an element or layer is referred to as being “on” or “connected to” another element or layer, it can be directly on or directly connected to the other element or layer, or intervening elements or layers may be present. In contrast, when an element or layer is referred to as being “directly on” or “directly connected to” another element or layer, there are no intervening elements or layers present. Further, it will be understood that for the purposes of this disclosure, “at least one of,” and similar language, will be interpreted to indicate any combination of the enumerated elements following the respective language, including combinations of multiples of the enumerated elements. For example, “at least one of X, Y, and Z” will be construed to indicate X only, Y only, Z only, or any combination of two or more items X, Y, and Z (e.g., XYZ, XZ, YZ).
A solar cell according to an exemplary embodiment of the present invention will be described with reference to
Referring to
The first electrode layer 120 may include a metal, such as, tungsten, tantalum, titanium, gold, and molybdenum.
The P-type light absorbing layer 130 has a low electron density and a high hole density, and may be a CI(G)S group light absorbing layer in which CuIn(Ga)Se2 is the P-type semiconductor. In an exemplary embodiment, the thickness of the P-type light absorbing layer 130 of the solar cell may be about 0.2 μm to about 1.5 μm, which is very thin compared with the thickness of the P-type light absorbing layer of the conventional art.
The nanoparticle 70 may be made of at least one of: gold (Au), silver (Ag), platinum (Pt), aluminum (Al), tungsten (W), or vanadium (V). Light L incident to the solar cell at the overcoat 210 progresses to the first electrode layer 120 and the nanoparticle 70 scatters a portion of the light L1 that is not absorbed by the P-type light absorbing layer 130. The scattered light L2, scattered by the nanoparticles 70, may be absorbed in the P-type light absorbing layer 130, thereby increasing the efficiency of absorption of the incident light L. The nanoparticles 70, according to an exemplary embodiment, are disposed in the absorbing layer 130, and particularly, may be disposed at the interface between the P-type light absorbing layer 130 and the first electrode layer 120. The nanoparticles 70 may be arranged with a space of less than about 1000 nm between them, in detail less than about 600 nm, and the size of the nanoparticles 70 may be more than about 60 nm, in detail more than about 100 nm.
The buffer layer 140 is disposed between the P-type light absorbing layer 130 and the N-type light absorbing layer 150, thereby compensating for the interface deterioration according to a PN heterojunction.
The N-type light absorbing layer 150 has an N-type semiconductor characteristic and may include zinc oxide (ZnO).
The second electrode layer 160 is made of a transparent conductor, such as, zinc oxide, indium tin oxide (ITO), etc.
The sealing layer 310 is disposed on the second electrode layer 160 and protects the second electrode layer from the overcoat 210. The sealing layer 310 may include ethylene vinyl acetate (EVA).
The solar cell, according to an exemplary embodiment, includes a plurality of nanoparticles 70 disposed at the interface between the thin P-type light absorbing layer 130 and the first electrode layer 120. Accordingly, a portion of light L1, i.e., light from among the incident light L that progresses to the P-type light absorbing layer 130 and that is not absorbed by the P-type light absorbing layer 130, is scattered (L2). The scattered light L2 progresses through the P-type light absorbing layer 130, having a thin thickness, and may be absorbed therein, thereby increasing the light absorption efficiency of the solar cell. In an exemplary embodiment, if forming the thin P-type light absorbing layer 130, the light absorption efficiency may be increased by a plurality of nanoparticles 70, and because the P-type light absorbing layer 130 is formed thin, the material cost of formation may be reduced and the production time may be shortened.
A solar cell, according to an exemplary embodiment of the present invention, will be described with reference to
Referring to
The thickness of the P-type light absorbing layer 130 of the solar cell, according to an exemplary embodiment of the present invention, is in the range of about 0.2 μm to about 1.5 μm, which is thinner than the thickness of the P-type light absorbing layer 130 of the conventional art.
The nanoparticles 70 scatter portions of the light L1, i.e., light that is not absorbed by the P-type light absorbing layer 130 and progresses into the first electrode layer 120. The scattered light L2 may be absorbed in the P-type light absorbing layer 130, thereby increasing the efficiency of absorption of the incident light L. The nanoparticles 70, according to an exemplary embodiment, may be disposed in the first electrode layer 120, and particularly, may be disposed at the interface between the P-type light absorbing layer 130 and the first electrode layer 120. The nanoparticles 70 may be disposed with a space of less than about 1000 nm between them, and in detail, about 600 nm, and the size of the nanoparticles 70 may be more than about 60 nm, and in detail, about 100 nm.
The solar cell, according to an exemplary embodiment, includes a plurality of nanoparticles 70 disposed at the interface between the thin P-type light absorbing layer 130, and the first electrode layer 120. Accordingly, a portion of the light L1, i.e., light from among the incident light L that progresses to the P-type light absorbing layer 130 and that is not absorbed by the P-type light absorbing layer 130, is scattered (L2). A portion of the scattered light L2 progresses into the P-type light absorbing layer 130 and may be absorbed therein, thereby increasing the light absorption efficiency of the solar cell. In an exemplary embodiment, although the P-type light absorbing layer 130 is thin, the light absorption efficiency of the solar cell may be increased by use of a plurality of nanoparticles 70, and the layer forming the P-type light absorbing layer 130 is thin thereby reducing material costs and production time.
A light absorption ratio of a solar cell according to an exemplary embodiment of the present invention will be described with reference to
In the exemplary embodiments depicted in
Referring to
Referring to
In an exemplary embodiment, if the thickness of the P-type light absorbing layer 130 is thinner than the P-type light absorbing layer of the conventional solar cell and the nanoparticles 70 are formed in the first electrode layer 120, the absorption efficiency of the incident light may be increased.
A light absorption ratio of a solar cell, according to an exemplary embodiment of the present invention, will be described with reference to
In the exemplary embodiments depicted in
Referring to
A light absorption ratio of a solar cell according to an exemplary embodiment of the present invention will be described with reference to
In the exemplary embodiment depicted in
Referring to
In an exemplary embodiment, in the case in which the P-type light absorbing layer is formed thinly compared with that of the conventional solar cell and the nanoparticles are formed in the first electrode layer, it may be confirmed that the light absorption efficiency is increased. In the case in which the space between the nanoparticles is less than about 1000 nm, in detail, about 600 nm, and the size of the nanoparticles is more than about 60 nm, in detail about 100 nm, it may be confirmed that the light absorption efficiency is increased largely.
A solar cell according to an exemplary embodiment of the present invention will be described with reference to
Referring to
The first electrode layer 120 may include a metal, such as, at least one of: tungsten, tantalum, titanium, and gold, and in detail, may include molybdenum.
The P-type light absorbing layer 130 has a low electron density and a high hole density, and may be a CI(G)S group light absorbing layer in which CuIn(Ga)Se2 is the P-type semiconductor.
The buffer layer 140 is disposed between the P-type light absorbing layer 130 and the N-type light absorbing layer 150, thereby compensating for the interface deterioration according to a PN heterojunction.
The N-type light absorbing layer 150 has an N-type semiconductor characteristic and may include ZnO.
The second electrode layer 160 is made of a transparent conductor, such as, zinc oxide, indium tin oxide (ITO), etc.
The nanoparticles 70 may be made of at least one of: gold (Au), silver (Ag), platinum (Pt), aluminum (Al), tungsten (W), or vanadium (V). Light L incident to the solar cell progresses to the second electrode layer 160 and the nanoparticles 70 scatter a portion of the light that is reflected by the second electrode layer 160 from among the incident light L. The scattered light may be absorbed by the N-type light absorbing layer 150 or P-type light absorbing layer 130, thereby increasing the light absorption efficiency. The space between the nanoparticles 70 may be less than about 1000 nm, in detail, in the range of about 200 nm to 1000 nm, and the size of the nanoparticles may be more than about 50 nm, in detail in the range of about 50 nm to 100 nm.
A light absorption efficiency of a solar cell according to an exemplary embodiment of the present invention will be described with reference to
In the exemplary embodiment depicted in
Referring to
In an exemplary embodiment of the present invention, the nanoparticles 70 are formed on the second electrode layer 160, the space between the nanoparticles is in the range of about 200 nm to 1000 nm, and the size of the nanoparticles is in the range of about 50 nm to 100 nm. It may be confirmed that the light absorption efficiency of the solar cell is increased compared with a conventional solar cell.
A solar cell according to an exemplary embodiment of the present invention will be described with reference to
Referring to
A solar cell according to an exemplary embodiment of the present invention will be described with reference to
Referring to
The space between the nanoparticles 70 may be in the range of about 100 nm to about 400 nm, and the size of the nanoparticles 70 may be in the range of about 10 nm to about 40 nm.
A light absorption efficiency of a solar cell according to an exemplary embodiment of the present invention will be described with reference to
In the exemplary embodiment, like the exemplary embodiment shown in
Referring to
In an exemplary embodiment of the present invention, if the solar cell including the nanoparticles 70 disposed inside the N-type light absorbing layer 150 is formed, the space between the nanoparticles is in the range of about 100 nm to about 400 nm, and the size of the nanoparticles is in the range of about 10 nm to about 40 nm. Referring to
Although exemplary embodiments described here in disclose nanoparticles in one layer of an exemplary solar cell, aspects of the present invention are not limited thereto, and nanoparticles may be formed in two or more layers.
In exemplary embodiments, the solar cell's P-type light absorbing layer is thin, and the nanoparticles are disposed in the solar cell. Although the P-type light absorbing layer is thin, the light absorption efficiency may be increased by the use of nanoparticles. Accordingly, the layer forming the P-type light absorbing layer is formed thin, thereby reducing material costs and a production time may be shortened.
Also, in the solar cell according to exemplary embodiments of the present invention, the nanoparticles are disposed on the transparent electrode layer or inside the transparent electrode layer, and the size of the nanoparticles and the space between them are controlled such that the light absorption efficiency may be increased, and the nanoparticles are disposed in the N-type light absorbing layer, and the size of the nanoparticles and the space between them are controlled such that the light absorption efficiency may be increased.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Number | Date | Country | Kind |
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10-2011-0035463 | Apr 2011 | KR | national |