Patent Application
20170207354
This application claims priority to and the benefit of Korean Patent Application No. 10-2016-0004964 filed in the Korean Intellectual Property Office on Jan. 14, 2016, the entire contents of which are incorporated herein by reference.
Field of the Invention
Embodiments of the invention relate to a solar cell, and more particularly to a hetero-junction solar cell.
Background of the Related Art
Recently, research on hetero junction solar cells has been progressing in order to improve the efficiency of solar cells. Representative hetero junction solar cells include solar cells using intrinsic-amorphous silicon (i-a-Si) as a passivation layer, and solar cells using a thin tunnel oxide layer as a passivation layer.
The hetero junction solar cells are formed on front and back surfaces of a semiconductor substrate for a solar cell and include a transparent conductive oxide (TCO) layer that performs an optical function (for example, a function of an anti-reflection layer and a reflection layer) and an electrical function (for example, a contact function with a metal electrode).
An object of the invention is to provide a high efficiency solar cell.
In one aspect, there is provided a solar cell including a crystalline semiconductor substrate containing impurities of a first conductivity type; a front doped layer located on a front surface of the semiconductor substrate; a back doped layer located on a back surface of the semiconductor substrate; a front transparent conductive layer located on the front doped layer and having a first thickness; a front collector electrode located on the front transparent conductive layer; a back transparent conductive layer located under the back doped layer and having a second thickness; and a back collector electrode located under the back transparent conductive layer. The first thickness of the front transparent conductive layer and the second thickness of the back transparent conductive layer are different from each other, and a sheet resistance of the front transparent conductive layer is less than a sheet resistance of the back transparent conductive layer.
In an embodiment of the invention, the front transparent conductive layer and the back transparent conductive layer may be formed of the same material, for example, the front transparent conductive layer and the back transparent conductive layer may be formed of a layer containing indium oxide (In2O3) as a main component and containing tin (Sn), zinc (Zn), tungsten (W), cerium (Ce) or hydrogen (H) as impurities, or a layer containing indium oxide as a main component and containing at least one of titanium (Ti) and tantalum (Ta) as impurities, or a layer containing zinc oxide (ZnO) as a main component and containing aluminum (Al), boron (B), or gallium (Ga) as impurities, or a layer containing tin oxide (SnO2) as a main component and containing fluorine (F) as impurities.
In this instance, “the same material” refers to a material having a main component and an impurity identical to each other, and the material having different types of impurities contained therein do not correspond to the same material.
Alternatively, the front transparent conductive layer and the back transparent conductive layer may be formed of different materials.
In an embodiment of the invention, an oxygen content of the back transparent conductive layer may be larger than an oxygen content of the front transparent conductive layer.
According to this configuration, since the front transparent conductive layer having an oxygen content smaller than that of the back transparent conductive layer is formed to have a lower sheet resistance than that of the back transparent conductive layer, although reducing the size (width, etc.) of the front collector electrodes to reduce a shading loss due to the front collector electrodes, the front transparent conductive layer can transfer the charge well.
Since the back transparent conductive layer having an oxygen content relatively larger than that of the front transparent conductive layer is formed to have a lower light absorptance than the front transparent conductive layer, the amount of light absorbed in the back transparent conductive layer can be reduced.
In an embodiment of the invention, a solar cell may be a bifacial solar cell or a mono-facial solar cell.
In the instance of a bifacial solar cell, each of the front collector electrode and the back collector electrode may include a plurality of finger electrodes extending in a first direction, and at least one bus bar electrode extending in a second direction orthogonal to the first direction and physically connected to the plurality of finger electrodes.
In this instance, the second thickness of the back transparent conductive layer may be less than the first thickness of the front transparent conductive layer.
According to an experiment of the invention, in the laminated structure of the silicon/transparent conductive layer, it can be seen that the thinner the thickness of the transparent conductive layer, the more the total reflection effect increases.
Therefore, in the instance of a bifacial solar cell, by forming the second thickness of the back transparent conductive layer to be less than the first thickness of the front transparent conductive layer, the amount of light reflected from the back surface of the semiconductor substrate to the inside of the semiconductor substrate can be increased, thereby improving the efficiency of the solar cell.
In the instance of a bifacial solar cell, the first thickness of the front transparent conductive layer may be 70 nm to 100 nm, and the second thickness of the back transparent conductive layer may be 25 nm to 75 nm within a range less than the first thickness of the front transparent conductive layer.
In a bifacial solar cell, a front passivation layer may be located between the front doped layer and the semiconductor substrate, and a back passivation layer may be located between the back doped layer and the semiconductor substrate.
The front doped layer and the back doped layer may be formed of amorphous silicon containing impurities, and the front passivation layer and the back passivation layer may be formed of intrinsic amorphous silicon or a tunnel oxide.
Each of the front surface and the back surface of the semiconductor substrate may be formed as a texturing surface including a plurality of fine unevenness.
Unlike the bifacial solar cell, in the instance of a mono-facial solar cell, the front collector electrode may include a plurality of finger electrodes extending in a first direction, and at least one bus bar electrode extending in a second direction orthogonal to the first direction and physically connected to the plurality of finger electrodes, and the back collector electrode may include a sheet electrode entirely covering a back surface of the back transparent conductive layer.
According to an experiment of the invention, in the laminated structure of the silicon/transparent conductive layer/metal electrode, when parasitic absorption loss is caused by the metal, it can be seen that as the thickness of the transparent conductive layer increases, the parasitic absorption loss decreases.
Therefore, in the instance of a mono-facial solar cell, by forming the second thickness of the back transparent conductive layer to be greater than the first thickness of the front transparent conductive layer, the amount of light reflected from the back surface of the semiconductor substrate to the inside of the semiconductor substrate can be increased, thereby improving the efficiency of the solar cell.
In the instance of a mono-facial solar cell, the first thickness of the front transparent conductive layer may be 70 nm to 100 nm, and the second thickness of the back transparent conductive layer may be 70 nm to 500 nm within a range larger than the first thickness of the front transparent conductive layer.
On the other hand, in the instance of a mono-facial solar cell, like a bifacial solar cell, a front passivation layer may be located between the front doped layer and the semiconductor substrate, and a back passivation layer may be located between the back doped layer and the semiconductor substrate.
The front doped layer and the back doped layer may be formed of amorphous silicon containing impurities, and the front passivation layer and the back passivation layer may be formed of intrinsic amorphous silicon or a tunnel oxide.
In the instance of a mono-facial solar cell, each of the front surface and the back surface of the semiconductor substrate may be formed as a texturing surface including a plurality of fine unevenness. Alternatively, the back surface of the semiconductor substrate may be formed of a substantially flat surface that does not include fine unevenness.
According to this configuration, since the front transparent conductive layer having an oxygen content smaller than that of the back transparent conductive layer is formed to have a lower sheet resistance than that of the back transparent conductive layer, although reducing the size (width, etc.) of the front collector electrodes to reduce a shading loss due to the front collector electrodes, the front transparent conductive layer can transfer the charge well.
Since the back transparent conductive layer having an oxygen content relatively larger than that of the front transparent conductive layer is formed to have a lower light absorptance than the front transparent conductive layer, the amount of light absorbed in the back transparent conductive layer can be reduced.
Therefore, in the instance of a bifacial solar cell, since the second thickness of the back transparent conductive layer is less than the first thickness of the front transparent conductive layer, the amount of light reflected from the back surface of the semiconductor substrate to the inside of the semiconductor substrate can be increased, thereby improving the efficiency of the solar cell.
Further, in the instance of a mono-facial solar cell, since the second thickness of the back transparent conductive layer is formed to be greater than the first thickness of the front transparent conductive layer, the amount of light reflected from the back surface of the semiconductor substrate to the inside of the semiconductor substrate can be increased, thereby improving the efficiency of the solar cell.
Reference will now be made in detail to embodiments of the invention, examples of which are illustrated in the accompanying drawings. Since the invention may be modified in various ways and may have various forms, specific embodiments are illustrated in the drawings and are described in detail in the specification. However, it should be understood that the invention are not limited to specific disclosed embodiments, but include all modifications, equivalents and substitutes included within the spirit and technical scope of the invention.
The terms ‘first’, ‘second’, etc., may be used to describe various components, but the components are not limited by such terms. The terms are used only for the purpose of distinguishing one component from other components.
For example, a first component may be designated as a second component without departing from the scope of the embodiments of the invention. In the same manner, the second component may be designated as the first component.
The term “and/or” encompasses both combinations of the plurality of related items disclosed and any item from among the plurality of related items disclosed.
When an arbitrary component is described as “being connected to” or “being linked to” another component, this should be understood to mean that still another component(s) may exist between them, although the arbitrary component may be directly connected to, or linked to, the second component.
On the other hand, when an arbitrary component is described as “being directly connected to” or “being directly linked to” another component, this should be understood to mean that no other component exists between them.
The terms used in this application are used to describe only specific embodiments or examples, and are not intended to limit the invention. A singular expression can include a plural expression as long as it does not have an apparently different meaning in context.
In this application, the terms “include” and “have” should be understood to be intended to designate that illustrated features, numbers, steps, operations, components, parts or combinations thereof exist and not to preclude the existence of one or more different features, numbers, steps, operations, components, parts or combinations thereof, or the possibility of the addition thereof.
In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.
Unless otherwise specified, all of the terms which are used herein, including the technical or scientific terms, have the same meanings as those that are generally understood by a person having ordinary knowledge in the art to which the invention pertains.
The terms defined in a generally used dictionary must be understood to have meanings identical to those used in the context of a related art, and are not to be construed to have ideal or excessively formal meanings unless they are obviously specified in this application.
The following example embodiments of the invention are provided to those skilled in the art in order to describe the invention more completely. Accordingly, shapes and sizes of elements shown in the drawings may be exaggerated for clarity.
Example embodiments of the invention will be described with reference to the accompanying drawings.
As shown in the drawings, a solar cell according to an embodiment of the invention includes a crystalline semiconductor substrate 110.
As shown in
In contrast, in an instance of a mono-facial solar cell shown in
A front passivation layer 120, a front doped layer 130, a front transparent conductive layer 140, and a front collector electrode 150 are sequentially stacked on the front surface of the semiconductor substrate 110. A back passivation layer 160, a back doped layer 170, a back transparent conductive layer 180, and a back collector electrode 190 are sequentially stacked on the back surface of the semiconductor substrate 110.
Hereinafter, the term “front surface” refers to a surface facing upward in the accompanying drawings, and the term “back surface” refers to a surface facing downward in the accompanying drawings.
The substrate 110 is a semiconductor substrate 110 made of crystalline silicon containing impurities of a first conductivity type, for example, an n-type. In this instance, silicon may be single crystal silicon or polycrystalline silicon.
Since the substrate 110 has the n-type, the substrate 110 contains impurities of a group V element such as phosphorus (P), arsenic (As), antimony (Sb), or the like.
Alternatively, however, the substrate 110 may be a p-type and may be made of a semiconductor material other than silicon. When the substrate 110 has the p-type, the substrate 110 may contain impurities of a group III element such as boron (B), gallium (Ga), indium (In), or the like.
Hereinafter, an instance that the substrate 110 has the n-type will be described as an example.
The substrate 110 has a texturing surface whose surface is textured. More specifically, the substrate 110 includes both a front surface, on which the front passivation layer 120 is located, and a back surface, on which the back passivation layer 160 is located, as a texturing surface.
The front passivation layer 120 and the back passivation layer 160 may be formed of substantially intrinsic (i-type) amorphous silicon or may be formed of a tunnel oxide. The front passivation layer 120 and the back passivation layer 160 may be formed to have a thickness of approximately 5 nm on substantially the entire area of the front and back surfaces of the substrate 110.
In this instance, each of the front passivation layer 120 and the back passivation layer 160 has the same surface shape as the texturing surface of the substrate 110. That is, each of the front passivation layer 120 and the back passivation layer 160 has a texturing surface.
The front doped layer 130 located on the front passivation layer 120 is an impurity doped region of a second conductive type (for example, a p-type) opposite the conductive type of the substrate 110. The front doped layer 130 is formed of p-type amorphous silicon (p-a-Si) and forms a p-n junction and a hetero junction with the substrate 110.
Therefore, because the substrate 110 has the n-type and the front doped layer 130 has the p-type, the separated electrons move toward the substrate 110 and the separated holes move toward the front doped layer 130.
Unlike the embodiment, when the substrate 110 has the p-type, the front doped layer 130 has the n-type. In this instance, the separated holes move toward the substrate 110, and the separated electrons move toward the front doped layer 130.
The front transparent conductive layer 140 formed on the front doped layer 130 may be formed of a layer containing indium oxide (In2O3) as a main component and containing tin (Sn), zinc (Zn), tungsten (W), cerium (Ce) or hydrogen (H) as impurities, or a layer containing indium oxide as a main component and containing at least one of titanium (Ti) and tantalum (Ta) as impurities, or a layer containing zinc oxide (ZnO) as a main component and containing aluminum (Al), boron (B), or gallium (Ga) as impurities, or a layer containing tin oxide (SnO2) as a main component and containing fluorine (F) as impurities.
The front transparent conductive layer 140 has an anti-reflection function for increasing the amount of light incident on the semiconductor substrate 110, and a function to transfer charges moved to the front doped layer 130 to the front collector electrode 150.
The front transparent conductive layer 140 having the above functions is formed with a first thickness T1 of approximately 70 nm to 100 nm in consideration of anti-reflection characteristics.
In this instance, the front doped layer 130 and the front transparent conductive layer 140 are formed to have the same surface shape as the texturing surface of the substrate 110.
The front collector electrode 150 located on the front transparent conductive layer 140 includes a plurality of finger electrodes 150a extending in a first direction X-X and spaced apart in parallel, and at least one bus bar electrode 150b extending in a second direction Y-Y orthogonal to the first direction X-X and physically connected to the plurality of finger electrodes 150a. The front collector electrode 150 is formed of a metal having excellent conductivity, for example, silver (Ag).
The back doped layer 170 is located under the back passivation layer 160 located on the back surface of the semiconductor substrate 110. The back doped layer 170 is an impurity doped region having a first conductivity type (for example, an n-type), which is the same as the conductive type of the substrate 110 and is made of n-type amorphous silicon. The back doped layer 170 forms a hetero junction with the substrate 110.
Thus, since the semiconductor substrate 110 and the back doped layer 170 have the n-type, the separated electrons move toward the back doped layer 170 and the separated holes move toward the front doped layer 130.
Unlike the embodiment, when the substrate 110 has the p-type, the back doped layer 170 has the p-type. In this instance, the separated holes move toward the back doped layer 170, and the separated electrons move toward the front doped layer 130.
The back transparent conductive layer 180 formed under the back doped layer 170, that is, on the back surface thereof, has a back reflect function, and a function to transfer charges moved to the back doped layer 170 to the back collector electrode 190.
The back transparent conductive layer 180 is formed of the same material as the front transparent conductive layer 140.
In this instance, “the same material” refers to a material having a main component and an impurity identical to each other, and the material having different types of impurities contained therein do not correspond to the same material.
That is, when the front transparent conductive layer 140 is made of In2O3:W (hereinafter referred to as “IWO”), that is, indium oxide (In2O3) as a main component containing tungsten (W) as an impurity, similarly to the front transparent conductive layer 140, the back transparent conductive layer 180 is made of IWO.
Alternatively, the front transparent conductive layer 140 and the back transparent conductive layer 180 may be formed of different materials.
Each of the back doped layer 170 and the back transparent conductive layer 180 has the same surface shape as the texturing surface of the substrate 110.
The back collector electrode 190 is located under the back transparent conductive layer 180, that is, on a lower part thereof.
As shown in
As shown in
In the bifacial and mono-facial solar cells, a region where the front collector electrode 150 is formed becomes a shading region where no light is incident.
Therefore, it is preferable but not required to reduce the size (width, etc.) of the front collector electrode 150 in order to reduce a shading loss due to the front collector electrode 150. However, if the size of the front collector electrode 150 is reduced, the charges moved toward the front doped layer 130 cannot be effectively collected.
Therefore, in the instance of the front transparent conductive layer 140, it is preferable but not required to consider the electrical characteristics rather than the optical characteristics.
However, in the instance of the back transparent conductive layer 180 located on the back surface of the semiconductor substrate 110, there is less restriction on the electrical characteristics as compared with the front transparent conductive layer 140.
Therefore, in the instance of the back transparent conductive layer 180, it is preferable but not required to further consider the optical characteristics rather than the electrical characteristics.
Thus, in the embodiment of the invention, by making content of a material, for example, oxygen, capable of controlling the electrical characteristics and optical characteristics of the transparent conductive layer depending on the content thereof different in the front transparent conductive layer 140 and the back transparent conductive layer 180, the sheet resistance of the front transparent conductive layer 140 is formed to be less than the sheet resistance of the back transparent conductive layer 180, and the light absorptance of the back transparent conductive layer 180 is formed to be less than the light absorptance of the front transparent conductive layer 140.
As a material capable of controlling the electrical characteristics and optical characteristics of the transparent conductive layer depending on the content thereof, there is hydrogen (H) in addition to oxygen. However, it is more preferable but not required to control the injection amount of oxygen when forming the transparent conductive layer because the control effect on the injection amount of oxygen is better than that of hydrogen (H).
Referring to
Referring to
Therefore, referring to
Since it is preferable but not required that the front transparent conductive layer 140 consider the electrical characteristics more than the optical characteristics as compared with the back transparent conductive layer 180, when the front transparent conductive layer 140 is formed, it can be seen that it is preferable but not required to inject oxygen in an amount less than 15 sccm, especially less than 10 sccm.
Therefore, in the solar cell according to an embodiment of the invention, the oxygen content of the front transparent conductive layer 140 is formed to be smaller than the oxygen content of the back transparent conductive layer 180. Accordingly, the sheet resistance of the front transparent conductive layer 140 is formed to be smaller than the sheet resistance of the back transparent conductive layer 180.
On the other hand, according to an experiment of the invention, in the laminated structure of the silicon/transparent conductive layer as the bifacial solar cell shown in
In the laminated structure of the silicon/transparent conductive layer/metal electrode as the mono-facial solar cell shown in
Therefore, in the bifacial solar cell of the invention, a second thickness T2 of the back transparent conductive layer 180 is formed to be less than a first thickness T1 of the front transparent conductive layer 140. In the mono-facial solar cell, a second thickness T2 of the back transparent conductive layer 180 is formed to be greater than a first thickness T1 of the front transparent conductive layer 140.
As described above, since the front transparent conductive layer 140 is formed with the first thickness T1 of approximately 70 nm to 100 nm in consideration of the anti-reflection characteristic, in the instance of the bifacial solar cell shown in
In
Split 4 is a sample formed with a thickness of 50 nm while injecting oxygen in an amount of 50 sccm. Split 5 is a sample formed with a thickness of 25 nm while injecting oxygen in an amount of 50 sccm.
Referring to
When the second thickness T2 of the back transparent conductive layer 180 is 25 nm or more, a good short circuit current density Jsc can be obtained.
Therefore, in a bifacial solar cell, it is preferable but not required that the second thickness T2 of the back transparent conductive layer 180 is formed to be 25 nm or more within a range less than the first thickness T1 of the front transparent conductive layer 140. In particular, it can be seen that it is preferable but not required that the second thickness T2 of the back transparent conductive layer 180 is formed to be 25 nm to 75 nm.
In the instance of a mono-facial solar cell, as the second thickness T2 of the back transparent conductive layer 180 increases, the back reflection characteristic increases. Thus, it is preferable but not required that the second thickness T2 is thickened. However, the second thickness T2 is preferably but not necessarily 500 nm or less considering the material cost of the back transparent conductive layer 180 and bowing of the substrate.
Accordingly, in a mono-facial solar cell, the second thickness T2 of the back transparent conductive layer 180 may be formed to be 70 nm to 500 nm within a range larger than the first thickness T1 of the front transparent conductive layer 140.
The above-described solar cells (bifacial type and mono-facial type) can be manufactured as a solar cell module by a modularization process.
The solar cell module can be manufactured by carrying out a lamination process by positioning a plurality of solar cells electrically connected with adjacent solar cells by an interconnector or a ribbon between a pair of substrates, and by placing a sealing material between both substrates.
Hereinafter, a method of manufacturing a solar cell according to an embodiment of the invention will be briefly described.
First, the n-type single crystal silicon substrate is cleaned to remove impurities, and etching is performed using an etching solution composed of an aqueous solution of sodium hydroxide. Thus, a semiconductor substrate 110 having texturing surfaces formed on front and back surfaces of the silicon substrate is prepared.
Next, for example, using Radio-frequency (RF) plasma chemical vapor deposition (CVD) method, a front passivation layer 120 made of i-type amorphous silicon and a front doped layer 130 made of p-type amorphous silicon are sequentially formed on the front surface of the substrate 110, and a back passivation layer 160 made of i-type amorphous silicon and a back doped layer 170 made of n-type amorphous silicon are sequentially formed on the back surface of the substrate 110.
Next, using the ion plating method, a front transparent conductive layer 140 is formed on the front doped layer 130. In this instance, as the layer material source, a sintered body of indium oxide powder containing a predetermined amount of tungsten powder for doping the impurity can be used.
Also, using the ion plating method, a back transparent conductive layer 180 is formed under the back doped layer 170, that is, on the back surface of the back doped layer 170.
In this instance, the back transparent conductive layer 180 is formed of the same material as the front transparent conductive layer 140. By injecting a larger amount of oxygen into the back transparent conductive layer 180 than the amount of oxygen to be injected during formation of the front transparent conductive layer 140, the back reflection characteristic by the back transparent conductive layer 180 is improved.
For example, when the front transparent conductive layer 140 is formed, oxygen is injected in an amount of less than 15 sccm, especially less than 10 sccm. When the back transparent conductive layer 180 is formed, oxygen is injected in an amount of 15 sccm to 50 sccm, preferably but not necessarily in an amount of 15 sccm to 30 sccm.
The front transparent conductive layer 140 is formed with a first thickness T1 of 70 nm to 100 nm. In the instance of the bifacial solar cell, the back transparent conductive layer 180 is formed with a second thickness T2 of 25 nm to 75 nm within a range less than the first thickness T1 of the front transparent conductive layer 140. In the instance of the mono-facial solar cell, the back transparent conductive layer 180 is formed with a second thickness T2 of 70 nm to 500 nm within a range larger than the first thickness T1 of the front transparent conductive layer 140.
Alternatively, the back transparent conductive layer 180 may be formed of a different material from the front transparent conductive layer 140.
An annealing process may be performed for a predetermined time at a predetermined temperature for crystallizing the front transparent conductive layer 140 and the back transparent conductive layer 180 formed by the manufacturing method described above.
Then, using a screen printing method, in a predetermined region on the front transparent conductive layer 140 and the back transparent conductive layer 180, a silver (Ag) paste formed by kneading a silver (Ag) powder into a thermosetting resin such as an epoxy resin is formed into a predetermined shape. By heating the predetermined shape for a set time at a set temperature, the silver (Ag) paste is cured to form the front collector electrode 150 and the back collector electrode 190.
In this instance, in the instance of the bifacial solar cell, a silver paste may be formed on the finger electrode region and the bus bar electrode region on the front transparent conductive layer 140 and the back transparent conductive layer 180. In the instance of the mono-facial solar cell, after the front collector electrode 150 is formed, the back collector electrode 190 may be formed by applying and curing a conductive paste as a whole on the back transparent conductive layer 180.
Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2016-0004964 | Jan 2016 | KR | national |
