Claims
- 1. A solar energy absorbing article comprising:
- an aluminum-silicon alloy base having predominantly aluminum and from small amounts up to 18% by weight of silicon;
- an aluminum oxide matrix layer grown from, a part of and extending internally of an original surface of said base and forming a physical and chemical bond with said base; and
- a plurality of silicon dioxide crystals firmly embedded in and having a portion projecting from a surface of the aluminum-oxide matrix layer, the longitudinal axis of a plurality of said crytals being substantially perpendicular to the surface of said matrix layer to conduct solar energy to the alloy base.
- 2. A solar energy absorbing article as set forth in claim 1 wherein said crystals have a hexagonal form and terminate beyond the matrix layer in a point.
- 3. A solar energy absorbing article as set forth in claim 1 wherein the surface of aluminum oxide matrix layer and silicon dioxide crystals has less than about 1% reflectivity from about 0.35 to about 15 microns wavelength.
- 4. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a specific gravity of about 2.5 to 3.0.
- 5. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a dielectric constant of about 8.4 to 9.6.
- 6. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a dielectric strength of about 400 to 600 volts per mil.
- 7. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a melting point of about 2678.degree. to 3722 F.degree..
- 8. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a specific heat of about 0.16 to 0.20.
- 9. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a coefficient thermal expansion of about 4.0-6.7.times.10.sup.-.sup.6 in/in/F.degree..
- 10. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have thermal conductivity of about 13.0-15.0 BTU/hr.sup.. ft.sup.2. F.degree./ft.
- 11. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have a surface hardness of about 8 to 9 Mohs.
- 12. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have modulus elasticity of about 50-55 .times. 10.sup.6 lb/in.sup.2.
- 13. A solar energy absorbing article as set forth in claim 1 wherein said aluminum oxide matrix layer and plurality of silicon dioxide crystals have tensile strength of about 109-144 .times. 10.sup.3 lb/in.sup.2.
- 14. An article as set forth in claim 1 wherein the thermal conductivity along the longitudinal axis of the crystals is approximately twice that of the conductivity of thermal energy in a direction along the layer normal to the longitudinal axis of the crystals.
- 15. An article as set forth in claim 1 wherein said alloy base has about 7.5% by weight of silicon.
- 16. A solar energy absorbing article comprising:
- an aluminum-silicon alloy base having predominantly aluminum and from small amounts up to 18% by weight of silicon;
- an aluminum oxide matrix layer grown from, a part of and extending internally of an original surface of said base and forming a physical and chemical bond with said base;
- a plurality of silicon dioxide crystals firmly embedded in and having a portion projecting from a surface of the aluminum-oxide matrix layer, the longitudinal axis of a plurality of said crystals being substantially perpendicular to the surface of said matrix layer to conduct solar energy to the alloy base;
- the surface of aluminum oxide matrix layer and silicon dioxide crystals having less than about 1% reflectivity from about 0.35 to about 15 microns wavelength;
- said aluminum oxide matrix layer and plurality of silicon dioxide crystals having a specific gravity of about 2.5 to 3.0, a dielectric constant of about 8.4 to 9.6, a dielectric strength of about 400 to 600 volts per mil, a melting point of about 2678.degree. to 3722 F.degree., a specific heat of about 0.16 to 0.20, a coefficient thermal expansion of about 4.0-6.7 .times. 10.sup.-.sup.6 in/in/F.degree., thermal conductivity of about 13.0-15.0 BTU/hr.sup.. ft.sup.2. F.degree./ft, surface hardness of about 8 to 9 Mohs, modulus elasticity of about 50-55 .times. 10.sup.6 lb/in.sup.2, and tensile strength of about 109-144 .times. 10.sup.3 lb/in.sup.2.
- 17. A method of making a solar energy absorbing article consisting essentially of the steps of:
- providing an aluminum-silicon alloy base having predominantly aluminum and from trace amounts up to 18% by weight silicon;
- treating a surface of the base with a solution that selectively etches aluminum from the surface to provide etched aluminum surfaces and exposes silicon surfaces between the etched aluminum surfaces that protrude above the etched aluminum surfaces; and
- anodizing the exposed protruding silicon surfaces and etched aluminum surfaces to grow silicon dioxide crystals and an aluminum oxide supporting matrix layer from the etched aluminum surface so that the silicon dioxide crystals are embedded in, protrude from a surface of said matrix layer and are substantially perpendicular to said matrix layer to conduct solar energy to said alloy base and said aluminum oxide matrix layer forms a physical and chemical bond with the original surface of said alloy base treated by said solution.
- 18. A method of absorbing solar energy comprising the steps of:
- providing an aluminum-silicon alloy base having predominantly aluminum and small amounts up to 18% by weight of silicon; and
- forming a plurality of silicon dioxide crystals in an aluminum oxide matrix layer on a surface of the base with the silicon dioxide crystals having the longitudinal axis thereof substantially perpendicular to the surface of the matrix layer and having a portion projecting from a surface of the aluminum oxide layer to conduct solar energy applied to the projecting portions of said crystals to the alloy base via said crystals, said aluminum oxide matrix layer forming a physical and chemical bond with the original surface of said alloy base.
Parent Case Info
This is a continuation-in-part of my co-pending application Ser. No. 303,393, filed Nov. 3, 1972 which was a continuation-in-part of my co-pending application Ser. No. 210,072 filed Dec. 22, 1971 both now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3400057 |
Coates et al. |
Sep 1968 |
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Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
303393 |
Nov 1972 |
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Parent |
210072 |
Dec 1971 |
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