Patent Application
20180161942
The present invention relates to (i) a solder connection structure to be connected with a member via a solder material and (ii) a film forming method for forming a metal film on an aluminium base material.
It is being demanded in recent years that an electrical component be, for example, smaller, lighter, higher in performance, and more reliable. Examples of the electrical component include an electric power source, a cell, a circuit board, and a connector. Generally, cold spray, a screw, soldering, welding, or the like is used to connect such an electrical component to a substrate, a terminal, or the like.
Patent Literature 1 discloses the following arrangement. Specifically, metal layers each of which is made of an electrically conductive metal that is easily soldered are provided at regular intervals on a part of a surface of a belt-shaped flat conductor that is made of aluminium or an aluminium alloy. Then, an insulative resin film is attached to either side of the flat conductor between the respective metal layers. The electrically conductive metal can be any of Ni, Sn, Au, Zn, Ag, and Cu, or a combination thereof. The metal layer is formed by cold spray or the like.
Patent Literature 2 discloses a radiator. The radiator includes plated layers obtained by coating a surface of an aluminum member with Ni and Sn. According to the radiator, the plated layers are provided so that Ni has a weight ratio of not less than 0.18% and not more than 0.48% relatively to an entirety of the radiator and Sn has a weight ratio of not less than 0.10% and not more than 0.38% relatively to the entirety of the radiator. According to the radiator, the plated layer is coated with a urethane resin so that the urethane resin has a weight ratio of not less than 0.01% and not more than 0.08% relatively to the entirety of the radiator.
Patent Literature 3 discloses a soldering composition. The soldering composition contains a first metal component and a second metal component without containing lead. The first metal component has a melting point of not less than 183° C. and not more than 260° C. A kind of the second metal component and a relative amount of the first metal component and the second metal component allow an alloy having a melting point of not less than 260° C. and not more than 1500° C. to be formed by diffusion of the second metal component into the first metal component which is in a molten state. Patent Literature 3 takes, as an example of the first metal component, Sn alone or an alloy of two or more kinds of metallic elements selected from the group consisting of Sn, Ag, Cu, In, Bi, Sb, Zn, and Ni.
Patent Literature 4 discloses a solder composition that contains a mixture of Ni particles and Sn particles as a metal body filler.
[Patent Literature 1]
[Patent Literature 2]
[Patent Literature 3]
[Patent Literature 4]
Note, however, that the techniques disclosed in Patent Literatures 1 to 4 have the following problems.
According to the technique disclosed in Patent Literature 1, an Ni layer is formed, by a cold spray method, on the surface of the belt-shaped flat conductor that is made of aluminium or an aluminium alloy. Note, however, that since Ni whose film is formed by the cold spray method has a low surface density, such an Ni film has insufficient solder wettability.
According to the technique disclosed in Patent Literature 2, the Ni plated layer and the Sn plated layer are formed, in this order, on the surface of the aluminum member. This requires much time and cost. Further, in the technique disclosed in Patent Literature 2, no cold spray technique is used. Thus, the technique disclosed in Patent Literature 2 makes it impossible to enjoy an advantage of cold spray, i.e., an advantage of enabling partial processing.
The techniques disclosed in Patent Literatures 3 and 4 each relate to a soldering composition, and neither of the techniques disclosed in Patent Literatures 3 and 4 relates to a solder connection structure to be connected with a member via a solder material. Thus, neither of the techniques disclosed in Patent Literatures 3 and 4 provides a solder connection structure that enhances solder wettability.
Further, examples of a technique that is generally used to join (connect) dissimilar metals include a screw, soldering, and various welding techniques. Note, however, that corrosion may be caused depending on a material of a metal. For example, an aluminium base material and a copper wire which are screwed to each other may cause galvanization and consequently cause corrosion of the aluminium base material. Further, fixation by welding of an aluminium base material and a metallic material different from the aluminium base material requires a step of, for example, removing an oxide film. This requires much time and cost.
In view of the problems, the present invention has an object to provide (i) a solder connection structure for enhancing solder wettability and (ii) a film forming method, carried out so as to enhance solder wettability, for forming a metal film on an aluminium base material.
In order to attain the object, a solder connection structure in accordance with an embodiment of the present invention is a solder connection structure to be connected with a member via a solder material, including: an aluminium base material; and a metal film provided on the aluminium base material, the metal film being formed by a cold spray method in which a mixed powder material is used, the mixed powder material being a mixture of (i) a first powder material that contains any of nickel (Ni), gold (Au), zinc (Zn), silver (Ag), and copper (Cu), or an alloy of two or more kinds thereof and (ii) a second powder material that contains tin (Sn) or an Sn-containing alloy.
In order to attain the object, a film forming method in accordance with an embodiment of the present invention is a film forming method for forming a metal film on an aluminium base material, including the step of: cold spraying, onto the aluminium base material, a mixed powder material, which is a mixture of (i) a first powder material that contains any of nickel (Ni), gold (Au), zinc (Zn), silver (Ag), and copper (Cu), or an alloy of two or more kinds thereof and (ii) a second powder material that contains tin (Sn) or an Sn-containing alloy, so as to form the metal film on the aluminium base material.
The solder connection structure in accordance with an embodiment of the present invention which solder connection structure includes the above feature and the film forming method in accordance with an embodiment of the present invention which film forming method includes the above feature yield the following effects. Specifically, in a case where the mixed powder material is cold sprayed onto the aluminium base material, Sn, which is contained in the second powder material, is more likely to be in a semi-molten state than ingredients (Ni, Au, Zn, Ag, and Cu) of the first powder material, which ingredients are higher in melting point than Sn. Thus, Sn (i) enters a space between respective particles constituting the ingredients of the first powder material so as to carry out a function of coupling the particles, and (ii) allows the metal film to be a continuous film that has fewer irregularities.
With the arrangement, the solder connection structure in accordance with an embodiment of the present invention and the film forming method in accordance with an embodiment of the present invention can further enhance solder wettability than the following solder connection structures (1) and (2):
The solder connection structure in accordance with an embodiment of the present invention is preferably arranged such that: the first powder material contains Ni; the second powder material contains Sn; and the mixed powder material contains the first powder material in a weight ratio of not less than 80% and not more than 95%.
The film forming method in accordance with an embodiment of the present invention is preferably arranged such that: the first powder material contains Ni; the second powder material contains Sn; and the mixed powder material contains the first powder material in a weight ratio of not less than 80% and not more than 95%.
The solder connection structure in accordance with an embodiment of the present invention which solder connection structure includes the above feature and the film forming method in accordance with an embodiment of the present invention which film forming method includes the above feature can further enhance solder wettability. Specifically, in a case where the mixed powder material is cold sprayed onto the aluminium base material, Sn, which is contained in the second powder material, is more likely to be in a semi-molten state than the ingredients (Ni, Au, Zn, Ag, and Cu) of the first powder material, which ingredients are higher in melting point than Sn. Thus, Sn (i) enters a space between respective particles constituting the ingredients of the first powder material so as to carry out a function of coupling the particles, and (ii) allows the metal film to be a continuous film that has fewer irregularities.
In addition, the first powder material which has a weight ratio of not less than 80% and not more than 95% relatively to the mixed powder material allows a density of the first powder material to be maintained at a high level in the metal film. Further, a layer made of the first powder material is covered with a layer made of the second powder material. This also makes it possible to prevent an oxide from being generated in the layer made of the first powder material. For the above reasons, the solder connection structure in accordance with an embodiment of the present invention and the film forming method in accordance with an embodiment of the present invention can further enhance solder wettability.
An aspect of the present invention makes it possible to provide (i) a solder connection structure for enhancing solder wettability and (ii) a film forming method, carried out so as to enhance solder wettability, for forming a metal film on an aluminium base material.
Embodiments are described below with reference to the drawings. In the following description, identical components and identical constituent elements are given respective identical reference signs. Such components and constituent elements are also identical in name and function. Thus, a specific description of those components and constituent elements is not repeated.
[Cold Spray]
In recent years, a film forming method that is called a cold spray method has been used. The cold spray method is a method for (1) causing a carrier gas whose temperature is lower than a melting point or a softening temperature of metallic powder, of which a metal film is to be made, to flow at a high speed, (2) introducing the metallic powder into the flow of the carrier gas and then increasing the speed of the carrier gas into which the metallic powder has been introduced, and (3) forming the metal film by causing the metallic powder to collide with, for example, a substrate at a high speed while the metallic powder is in a solid phase.
A principle of film formation by the cold spray method is understood as below.
A collision speed of not less than a certain critical value is required for metallic powder to adhere to and accumulate on a substrate so as to form a film. Such a collision speed is referred to as a critical speed. In a case where the metallic powder collides with the substrate at a speed that is less than the critical speed, the substrate is worn, so that small crater-shaped cavities are merely formed in the substrate. The critical speed is changed by, for example, a material, a size, a shape, a temperature, and/or an oxygen content of the metallic powder, or a material of the substrate.
In a case where the metallic powder collides with the substrate at a speed that is not less than the critical speed, plastic deformation caused by a great shearing force occurs near an interface between the metallic powder and the substrate (or the film which has already been formed). The plastic deformation and generation of a great shock wave in a solid due to the collision cause an increase in temperature near the interface. In the above process, solid phase bonding occurs between the metallic powder and the substrate and between the metallic powder and the film (or the metallic powder which has already adhered to the substrate).
A cold spray device 100 in accordance with an embodiment of the present invention is described below with reference to
(Cold Spray Device 100)
The tank 110 stores therein a carrier gas. The carrier gas is supplied from the tank 110 to the heater 120. Examples of the carrier gas include nitrogen, helium, air, or a mixed gas of nitrogen, helium, and air. A pressure of the carrier gas is adjusted so that the pressure is, for example, not less than 70 PSI and not more than 150 PSI (not less than approximately 0.48 Mpa and not more than approximately 1.03 Mpa) at an exit of the tank 110. Note, however, that the pressure of the carrier gas at the exit of the tank 110 does not necessarily need to fall within the above range, and is appropriately adjusted in accordance with, for example, material(s) and/or a size of metallic powder, or material(s) of a substrate.
The heater 120 heats the carrier gas which has been supplied from the tank 110. More specifically, the carrier gas is heated to a temperature that is lower than a melting point of the metallic powder which is supplied from the feeder 140 to the nozzle 130. For example, the carrier gas which is subjected to measurement at an exit of the heater 120 is heated to a temperature in a range of not less than 50° C. and not more than 500° C., and preferably of not less than 150° C. and not more than 250° C. Note, however, that a heating temperature of the carrier gas does not necessarily need to fall within the above range, and is appropriately adjusted in accordance with, for example, the material(s) and/or the size of the metallic powder, or the material(s) of the substrate.
The carrier gas is heated by the heater 120 and then is supplied to the nozzle 130.
The nozzle 130 (i) causes an increase in speed of the carrier gas which has been heated by the heater 120 to a speed in a range of not less than 300 m/s and not more than 1200 m/s and (ii) causes the carrier gas whose speed has been increased to be sprayed therethrough onto a base material 10. Note, however, that the speed of the carrier gas does not necessarily need to fall within the above range, and is appropriately adjusted in accordance with, for example, the material(s) and/or the size of the metallic powder, or the material(s) of the substrate.
The feeder 140 supplies the metallic powder to the flow of the carrier gas whose speed is increased by the nozzle 130. The metallic powder which is supplied from the feeder 140 has a particle size of, for example, not less than 1 μm and not more than 50 μm. Together with the carrier gas, the metallic powder which has been supplied from the feeder 140 is sprayed through the nozzle 130 onto the base material 10.
The base material holder 150 fixes the base material 10. Onto the base material 10 which has been fixed by the base material holder 150, the carrier gas and the metallic powder are sprayed through the nozzle 130. A distance between a surface of the base material 10 and a tip of the nozzle 130 is adjusted so that the distance falls within a range of, for example, not less than 5 mm and not more than 30 mm. Note, however, that the distance between the surface of the base material 10 and the tip of the nozzle 130 does not necessarily need to fall within the above range, and is appropriately adjusted in accordance with, for example, the material(s) and/or the size of the metallic powder, or the material(s) of the substrate.
The control device controls the cold spray device 100 in accordance with information stored therein in advance and/or an input by an operator. Specifically, the control device controls, for example, (i) the pressure of the carrier gas which is supplied from the tank 110 to the heater 120, (ii) the temperature of the carrier gas which is heated by the heater 120, and a kind and an amount of the metallic powder which is supplied from the feeder 140, and/or the distance between the surface of the base material 10 and the nozzle 130.
(Formation of Metal Film on Aluminium Substrate 30)
With reference to
As shown in
Sn is lower in melting point than Ni. Thus, the Sn powder 42 which is cold sprayed is highly likely to be in a semi-molten state, and Sn enters a space between respective Ni particles so as to carry out a function of coupling the Ni particles. Further, the function of Sn allows the metal film 40 to have a surface that has fewer irregularities.
The following description discusses Example 1 in accordance with an embodiment of the present invention. The solder connection structure illustrated in
In Example 1, the aluminium substrate 30 illustrated in
In Example 1, the mixed powder material, which is a mixture of the Ni powder 41 and the Sn powder 42, is used. The Ni powder 41 has an average particle size of approximately 10 μm, and the Sn powder 42 has an average particle size of approximately 38 μm. The Ni powder 41 and the Sn powder 42 are mixed together in an Ni to Sn weight ratio of 95:5. The mixed powder material is sprayed through the nozzle 130 onto the aluminium substrate 30.
A distance between the tip of the nozzle 130 and the aluminium substrate 30 is 10 mm.
From the tank 110, air is supplied as the carrier gas. The pressure of the carrier gas is set at 120 PSI (approximately 0.83 Mpa) at the exit of the tank 110. The heater 120 has a preset temperature of 250° C., and the carrier gas which contacts Ni and Sn has a temperature that is lower than each of the melting point (1453° C.) of Ni and the melting point (231.97° C.) of Sn.
The mixed powder material which is sprayed through the nozzle 130 onto the aluminium substrate 30 reaches the aluminium substrate 30 at a temperature of approximately 103° C.
The solder connection structure 50 illustrated in
The following description discusses Comparative Example 1 with reference to
According to Comparative Example 1, an aluminium substrate 30 is a plate material made of aluminium, is rectangular, and has a thickness of 0.5 mm. Ni powder 41 has an average particle size of approximately 10 μm and is sprayed through a nozzle 130 onto the aluminium substrate 30.
A distance between a tip of the nozzle 130 and the aluminium substrate 30 is 10 mm.
From a tank 110, air is supplied as a carrier gas. The pressure of the carrier gas is set at 120 PSI (approximately 0.83 Mpa) at an exit of the tank 110. A heater 120 has a preset temperature of 350° C., and the carrier gas which contacts Ni has a temperature that is lower than the melting point (1453° C.) of Ni.
The following description discusses Comparative Example 2 with reference to
According to Comparative Example 2, an aluminium substrate 30 is a plate material made of aluminium, is rectangular, and has a thickness of 0.5 mm. Ni powder 41 has an average particle size of approximately 10 μm, and Sn powder 42 has an average particle size of approximately 38 μm. The Ni powder 41 and the Sn powder 42 are sprayed, in this order, through a nozzle 130 onto the aluminium substrate 30.
A distance between a tip of the nozzle 130 and the aluminium substrate 30 is 10 mm.
A pressure of a carrier gas is set at 120 PSI (approximately 0.83 Mpa) at an exit of a tank 110 in either of a case where the Ni powder 41 is sprayed through the nozzle 130 and a case where the Sn powder 42 is sprayed through the nozzle 130.
Regarding a heating temperature of the carrier gas, in a case where the Ni powder 41 is sprayed through the nozzle 130, a heater 120 has a preset temperature of 350° C., and the carrier gas which contacts Ni has a temperature that is lower than the melting point (1453° C.) of Ni. Meanwhile, in a case where the Sn powder 42 is sprayed through the nozzle 130, the heater 120 has a preset temperature of 250° C., and the carrier gas which contacts Sn has a temperature that is lower than the melting point (231.97° C.) of Sn.
The Ni powder 41 which is sprayed through the nozzle 130 onto the aluminium substrate 30 reaches the aluminium substrate 30 at a temperature of approximately 200° C. Meanwhile, the Sn powder 42 which is sprayed through the nozzle 130 onto the aluminium substrate 30 reaches the aluminium substrate 30 at a temperature of approximately 103° C.
Sn is lower in melting point than Ni. Thus, the Sn powder 42 which is cold sprayed is highly likely to be in a semi-molten state. This causes the Sn film 43 to have a surface that has fewer irregularities than the surface of the Ni film 41a.
(Evaluation of Wettability by Sn Bath)
The following description discusses a wettability evaluation test on each of the solder connection structures formed in Example (
The wettability evaluation test is carried out as below. Specifically, in view of the fact that many of solder materials are Sn-based metals, a film-formed surface to which flux for removing an oxide film is applied is immersed, for 5 seconds, in a crucible in which Sn is melted. The wettability evaluation test is thus carried out. Note here that the “film-formed surface” refers to a surface of each of the solder connection structure 50, the solder connection structure 52, and the solder connection structure 54 on which surface a metal film is formed by cold spray.
The following description discusses results of the wettability evaluation test with reference to
First, a result obtained in Comparative Example 1 is described. In a case where the solder connection structure 52 in accordance with Comparative Example 1 is immersed in the Sn bath for 5 seconds, a plurality of places where the Ni film 41a, to which no Sn adheres, is exposed is found in the solder connection structure 52 (see
According to the cold spray method, a film is formed by causing metallic particles to collide with a substrate at a high speed while the metallic particles are in a solid phase. Thus, according to the solder connection structure 52, an aggregate of particles of the Ni powder 41 is placed on the aluminium substrate 30 in a direction in which the Ni powder 41 is sprayed. Meanwhile, in a direction perpendicular to the direction in which the Ni powder 41 is sprayed, a gap or a recess is easily made between the respective particles of the Ni powder 41, so that the Ni film has many irregularities on a surface thereof. Thus, for, for example, (1) the reason that Ni has a lower surface density and (2) the reason that the Ni film 41a is influenced by an oxide, the solder connection structure 52 has lower solder wettability as shown by observation of
Next, a result obtained in Comparative Example 2 is described. According to the solder connection structure 54 in accordance with Comparative Example 2, the Ni film 41a is formed on the aluminium substrate 30 first as described earlier with reference to
Note, however, that in a case where the solder connection structure 54 in accordance with Comparative Example 2 is immersed in the Sn bath for 5 seconds, a part of the Sn film 43 is melted in the Sn bath, so that a part of the Ni film 41a, which is a layer under the Sn film 43, is exposed (see
Next, a result obtained in Example 1 is described. As described earlier with reference to
Note here that Sn is lower in melting point than Ni. Thus, the Sn powder 42 which is cold sprayed is highly likely to be in a semi-molten state, and Sn enters a space between respective Ni particles so as to carry out a function of coupling the Ni particles.
(Remark 1)
The following is the reason why the solder connection structure 52 and the solder connection structure 54 are employed as respective Comparative Examples 1 and 2.
A connection structure in which Ni powder is cold sprayed onto an aluminium substrate is regarded as a conventional technique. Note, however, that the inventors of the present invention found (a) that the connection structure has unfavorable solder wettability and (b) that the reason for the above (a) seems to be because Ni has a low surface density. In order to confirm the above (a) and (b), the inventors of the present invention employed the solder connection structure 52 as Comparative Example 1.
The inventors of the present invention studied a possibility that the above (a) of Comparative Example 1 will be overcome by forming an Ni film on an aluminium substrate and forming an Sn film on the Ni film.
(Remark 2)
The above-described comparative test is not in conformity with “JIS C60068-2-54⋅JIS Z3198-4” in which a solder checker for evaluating wettability of each of molten solder and an electronic component is used. This is because evaluation of solder wettability by appearance observation is also highly reliable.
(Mixing Ratio Between Ni Powder and Sn Powder)
The following description discusses an influence of a mixing ratio between the Ni powder 41 and the Sn powder 42 on solder wettability. In Example 1, the Ni powder 41 and the Sn powder 42 are mixed together in an Ni to Sn weight ratio of 95:5. In light of this, the following description discusses, with reference to
According to
As described earlier, according to the cold spray method, a film is formed by causing metallic particles to collide with a substrate at a high speed while the metallic particles are in a solid phase. Thus, according to the solder connection structure 52, an aggregate of particles of the Ni powder 41 is placed on the aluminium substrate 30 in a direction in which the Ni powder 41 is sprayed. Meanwhile, in a direction perpendicular to the direction in which the Ni powder 41 is sprayed, a gap or a recess is easily made between the respective particles of the Ni powder 41, so that the Ni film has many irregularities on a surface thereof. Thus, according to the solder connection structure 52, (1) Ni has a lower surface density and, (2) the Ni film 41a is influenced by an oxide 70 (see the drawing on the left of
Sn is lower in melting point than Ni. Thus, the Sn powder 42 which is cold sprayed is highly likely to be in a semi-molten state, and Sn enters a space between respective Ni particles so as to carry out a function of coupling the Ni particles. Further, the function of Sn allows a surface of the metal film 40 to be a continuous film that has fewer irregularities. Moreover, since the Ni powder 41 accounts for a high percentage of the mixed powder, the metal film 40 has a high Ni density accordingly. In addition, such an influence by the oxide 70 as described earlier with reference to
Sn enters a space between a respective plurality of Ni particles so as to carry out a function of coupling the plurality of Ni particles. Further, the Sn powder 42, which is highly likely to be in a semi-molten state while being cold sprayed, allows the metal film 40 to be a continuous film that has fewer irregularities. In addition, such an influence by the oxide 70 as described earlier with reference to
For the above reasons, in a case where the metal film 40 which contains the mixed powder of the Ni powder 41 and the Sn powder 42 is formed on the aluminium substrate 30, the solder connection structure can have higher wettability by maintaining, at not less than 80% and not more than 95%, a weight ratio in which the Ni powder is contained in the mixed powder.
(Others)
According to the solder connection structure in accordance with an embodiment of the present invention, instead of the Ni powder, a powder material which contains any of gold (Au), zinc (Zn), silver (Ag), and copper (Cu), or an alloy of two or more kinds of Ni, Au, Zn, Ag, and Cu can be used as the first powder material. Further, according to the solder connection structure in accordance with an embodiment of the present invention, instead of the Sn powder, a powder material which contains an Sn-containing alloy can be used as the second powder material.
Note here that an “alloy” refers to a metallic mixture of a plurality of metallic elements or a metallic mixture of a metallic element and a non-metallic element. An alloy, which can be in various states, is exemplified by, for example, (1) a solid solution in which substances of the alloy are completely melted together, (2) an eutectic crystal in which metals of the alloy are independent of each other at a crystal level, and (3) an intermetallic compound in which metals of the alloy are coupled together in respective constant ratios at an atomic level. According to an embodiment of the present invention, examples of a state of an “alloy” include such various states as described above.
Further, an “aluminium substrate”, which only needs to be a component or a member that allows a certain function to be carried out, can be generically referred to as an “aluminium base material”. For example, the solder connection structure in accordance with an embodiment of the present invention can be used for, for example, a cell tab or a bus bar.
Examples of a technique that is generally used to join (connect) dissimilar metals mainly include a screw, soldering, and various welding techniques. Note, however, that corrosion may be caused depending on a material of a metal. For example, an aluminium base material and a copper wire which are screwed to each other may cause galvanization and consequently cause corrosion of the aluminium base material. Further, fixation by welding of an aluminium base material and a metallic material different from the aluminium base material requires a step of, for example, removing an oxide film. This requires much time and cost. In view of such a problem of a conventional technique for joining (connecting) dissimilar metals, cold spray is used for the solder connection structure in accordance with an embodiment of the present invention. This allows the solder connection structure in accordance with an embodiment of the present invention (1) to be wider in range of combination of materials than conventional plating, vapor deposition, and clad techniques, (2) to be partially processed, and (3) to be lower in cost.
The present invention is not limited to the embodiments, but can be altered by a skilled person in the art within the scope of the claims. The present invention also encompasses, in its technical scope, any embodiment derived by combining technical means disclosed in differing embodiments.
The present invention is applicable to a solder connection structure to be connected with a member via a solder material.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2015-101235 | May 2015 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2016/064122 | 5/12/2016 | WO | 00 |
