Claims
- 1. A solid-state image pick-up device of the CCD type, said device comprising:
- a n-type semiconductor substrate;
- a vertical overflow drain structure for draining excessive charges in a photodetecting area into said semiconductor substrate;
- a first p-type well layer buried in said semiconductor substrate;
- said photodetecting region comprising a plurality of charge transfer paths formed in said first p-type well layer;
- a second p-type well layer, formed separately from said first p-type well layer, and buried in said semiconductor substrate; and
- a first drive circuit formed in said second p-type well layer, and a second drive circuit formed in said second p-type well layer, wherein each of said first and second drive circuits comprises a plurality of transistors, and wherein, within each of said drive circuits, said plurality of transistors have the same structure.
- 2. A solid-state image pick-up device as claimed in claim 1, wherein said second p-type well layer comprises two p-type well regions, said first drive circuit being formed in one of said p-type well regions, and said second drive circuit being formed in the other of said p-type well regions.
Priority Claims (4)
Number |
Date |
Country |
Kind |
2-178654 |
Jul 1990 |
JPX |
|
2-178655 |
Jul 1990 |
JPX |
|
2-178656 |
Jul 1990 |
JPX |
|
2-237251 |
Sep 1990 |
JPX |
|
Parent Case Info
This is a divisional of application No. 08/169,769 filed Dec. 20, 1993, U.S. Pat. No. 3,410,349 which is a continuation of application No. 07/725,105 filed Jul. 3, 1991, now abandoned.
US Referenced Citations (11)
Foreign Referenced Citations (1)
Number |
Date |
Country |
60-35572 |
Feb 1985 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
169769 |
Dec 1993 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
725105 |
Jul 1991 |
|