Claims
- 1. A method of fabricating a solid-state image sensor, comprising the steps of:(a) forming a first region in which light is converted into electricity, in a silicon substrate, said first region having an electrical conductivity opposite to an electrical conductivity of said silicon substrate; and (b) forming a second region composed of silicide, said second region forming a border area of said first region at a surface of said first region.
- 2. The method as set forth in claim 1, wherein said step (b) is carried out by silicifying a border area of said first region.
- 3. The method as set forth in claim 1, wherein said step (b) is carried out by depositing a refractory metal film and heating said refractory metal film.
- 4. The method as set forth in claim 1, further comprising the step of forming a light-impermeable film having an opening situated above said first region.
- 5. A method of fabricating a solid-state image sensor, comprising the steps of:(a) forming a first region in which light is converted into electricity, in a silicon substrate, said first region having an electrical conductivity opposite to an electrical conductivity of said silicon substrate; (b) forming a reset gate on said silicon substrate; (c) forming a reset drain region in said silicon substrate, said reset drain region having an electrical conductivity opposite to an electrical conductivity of said silicon substrate; and (d) forming a second region composed of suicide, said second region forming a border area of said first region at a surface of said first region.
- 6. A method as set forth in claim 5, wherein said step (d) is carried out by silicifying a border area of said region.
- 7. The method as set forth in claim 5, wherein said step (d) is carried out by depositing a refractory metal film and heating said refractory metal film.
- 8. The method as set forth in claim 5, further comprising the step of forming a light-impermeable film having an opening situated above said first region.
- 9. The method as set forth in claim 5, further comprising the step of forming a third region on a surface of said reset drain region, said third region being composed of silicide.
- 10. The method as set forth in claim 9, wherein said second and third regions are simultaneously formed.
- 11. A method of fabricating a solid-state image sensor, comprising the steps of:(a) forming a well in a silicon substrate; (b) forming a first region in which light is converted into electricity, in said well, said first region having an electrical conductivity opposite to an electrical conductivity of said well; (c) forming a reset gate on said well; (d) forming a reset drain region in said well, said reset drain region having an electrical conductivity opposite to an electrical conductivity of said well; and (e) forming a second region composed of silicide, said second region forming a border area of said first region at a surface of said first region.
- 12. The method as set forth in claim 11, wherein said step (e) is carried out by silicifying a border area of said first region.
- 13. The method as set forth in claim 11, wherein said step (e) is carried out by depositing a refractory metal film and heating said refractory metal film.
- 14. The method as set forth in claim 11, further comprising the step of forming a light-impermeable film having an opening situated above said first region.
- 15. The method as set forth in claim 11, further comprising the step of forming a third region on a surface of said reset drain region, said third region being composed of silicide.
- 16. The method as set forth in claim 11, where in said second and third regions are simultaneously formed.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-241322 |
Aug 1998 |
JP |
|
Parent Case Info
This is a divisional of application Ser. No. 09/382,643 filed Aug. 25, 1999, now U.S. Pat. No. 6,326,653, the disclosure of which is incorporated herein by reference.
US Referenced Citations (4)
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