Claims
- 1. A method of manufacturing a solid state imaging device, comprising the steps of:forming a first insulating film on a semiconductor substrate of a first conductivity type; selectively forming an element isolation region for separating an element region in the semiconductor substrate; forming a readout gate electrode on the element region with the first insulating film interposed therebetween and a gate electrode on the element isolation region with the first insulating film interposed therebetween; forming a diffusion region of a second conductivity type on a surface of the element region at one end of the readout gate electrode; forming a signal storage region of the second conductivity type on the surface of the element region at other end of the readout gate electrode; forming a second insulating film on an entire surface of a resultant structure; removing the second insulating film and forming a silicide block layer covering at least part of the signal storage region; forming a surface shield region of the first conductivity type on a surface of the signal storage region; removing the first insulating film and the second insulating film from the diffusion region to expose a surface of the diffusion region; and forming a metal silicide layer on the exposed surface of the diffusion region.
- 2. The method according to claim 1, wherein the semiconductor substrate is one of a well layer and an epitaxial growth layer.
- 3. The method according to claim 1, further comprising a step of removing the silicide block layer after the metal silicide layer is formed.
- 4. A method of manufacturing a solid state imaging device, comprising the steps of:forming a first insulating film on a semiconductor substrate of a first conductivity type; selectively forming an element isolation region for separating an element region in the semiconductor substrate; forming a readout gate electrode on the element region with the first insulating film interposed therebetween; forming a diffusion region of a second conductivity type on a surface of the element region at one end of the readout gate electrode; forming a signal storage region of the second conductivity type on the surface of the element region at other end of the readout gate electrode; and forming a surface shield region of the first conductivity type by selectively epitaxial-growing a silicon layer of the signal storage region.
- 5. The method according to claim 4, wherein the semiconductor substrate is one of a well layer and an epitaxial growth layer.
- 6. The method according to claim 4, wherein the surface shield region is formed by selectively growing a silicon layer into which no ions are implanted and then subjecting the selectively grown silicon layer to ion implantation and heat treatment.
- 7. The method according to claim 4, wherein the surface shield region is formed by selectively growing a silicon layer into which ions are implanted.
- 8. A method of manufacturing a solid state imaging device, comprising the steps of:forming a first insulating film on a semiconductor substrate of a first conductivity type; selectively forming an element isolation region for separating an element region in the semiconductor substrate; forming a readout gate electrode on the element region with the first insulating film interposed therebetween; forming a diffusion region of a second conductivity type on a surface of the element region at one end of the readout gate electrode; forming a signal storage region of the second conductivity type on the surface of the element region at other end of the readout gate electrode; forming a selective growth silicon layer by selectively epitaxial-growing a silicon layer of the signal storage region and the diffusion region; forming a surface shield region of the first conductivity type in the selective growth silicon layer on the signal storage region; forming a second insulating film on an entire surface of a resultant structure; removing the second insulating film so as to expose at least a surface of the selective growth silicon layer on the diffusion region and forming a silicide block layer covering at least part of the signal storage region; and forming a metal silicide layer on the exposed surface of the selective growth silicon layer on the diffusion region.
- 9. The method according to claim 8, wherein the semiconductor substrate is one of a well layer and an epitaxial growth layer.
- 10. The method according to claim 8, wherein the surface shield region is formed by selectively growing a silicon layer into which no ions are implanted and then subjecting the selectively grown silicon layer to ion implantation and heat treatment.
- 11. The method according to claim 8, wherein the surface shield region is formed by selectively growing a silicon layer into which ions are implanted.
- 12. The method according to claim 8, further comprising a step of removing the silicide block layer after the metal silicide layer is formed.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2000-088971 |
Mar 2000 |
JP |
|
2000-302660 |
Oct 2000 |
JP |
|
Parent Case Info
This application is a division of application Ser. No. 09/801,919 filed on Mar. 9, 2001.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
5463232 |
Yamashita et al. |
Oct 1995 |
A |
6023081 |
Drowley et al. |
Feb 2000 |
A |
6040592 |
McDaniel et al. |
Mar 2000 |
A |
6040593 |
Park |
Mar 2000 |
A |
6194242 |
Uchiya |
Feb 2001 |
B1 |
Foreign Referenced Citations (3)
Number |
Date |
Country |
10-150182 |
Jun 1998 |
JP |
11-045989 |
Feb 1999 |
JP |
2001-44404 |
Feb 2001 |
JP |