SOLID-STATE IMAGING DEVICE, SIGNAL CHARGE DETECTION DEVICE, AND CAMERA

Abstract

The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, advantages and features of the invention will become apparent from the following description thereof taken in conjunction with the accompanying drawings that illustrate specific embodiments of the present invention. In the Drawings:

FIG. 1 is a schematic plane view showing a structure of the conventional CCD solid-state imaging device;

FIG. 2 is a circuit diagram showing an example of an amplifier;

FIG. 3 is an enlarged plan view showing a part of the conventional CCD solid-state imaging device;

FIG. 4 is a schematic plane view showing a structure of a CCD solid-state imaging device according to the present invention;

FIG. 5A is an enlarged plane view showing a final stage of a horizontal CCD of a CCD solid-state imaging device according to the first embodiment of the present invention;

FIG. 5B is a cross-sectional view taken along line A-A′ of FIG. 5A;

FIG. 6A is an explanatory view showing a finished dimension of an isolated resist pattern;

FIG. 6B is an explanatory view showing finished dimensions of crowded resist patterns;

FIG. 7 is a view showing variations of the first wire and the second wire;

FIG. 8 is an enlarged plane view showing a final stage of a horizontal CCD of a CCD solid-state imaging device according to the second embodiment of the present invention;

FIG. 9 is an enlarged plane view showing a final stage of a horizontal CCD of a CCD solid-state imaging device according to the third embodiment of the present invention;

FIG. 10 is an enlarged plane view showing a final stage of a horizontal CCD of a CCD solid-state imaging device according to the fourth embodiment of the present invention;

FIG. 11 is an enlarged plane view showing a final stage of a horizontal CCD of a CCD solid-state imaging device according to the fifth embodiment of the present invention; and

FIGS. 12A to 12C are cross-sectional views of a CCD solid-state imaging device according to the sixth embodiment of the present invention.

Claims

1. A solid-state imaging device comprising: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light;an amplifier which is operable to convert the signal charges held in said floating diffusion capacity unit into a voltage;a first wire which connects said floating diffusion capacity unit to an input of said amplifier; anda second wire which is made of the same material as said first wire, formed in the same layer as said first wire, arranged around said first wire at least along long sides of said first wire, and electrically insulated from said first wire.

2. The solid-state imaging device according to claim 1, wherein said second wire is arranged to surround said first wire.

3. The solid-state imaging device according to claim 1, wherein said second wire is arranged around said first wire but not on a part which is overlapped with at least a part of a reset gate that resets the signal charges in said floating diffusion capacity unit.

4. The solid-state imaging device according to claim 1 further comprising a plurality of third wires, each of which is made of the same material as said second wire, formed in the same layer as said second wire, arranged around said second wire at least along long sides of said second wire, and electrically insulated from said first wire.

5. The solid-state imaging device according to claim 1, wherein said second wire is connected to a source of a transistor included in said amplifier.

6. The solid-state imaging device according to claim 1, wherein said first wire includes:a first end connected to said floating diffusion capacity unit via a first contact;a second end connected to said amplifier via a second contact; anda connection wire connecting said first end with said second end and having a width smaller than respective widths of said first end and said second end, andrespective distances between (i) said second wire and (ii) said first end, said second end, and said connection wire are equal.

7. The solid-state imaging device according to claim 1, wherein a distance between said first wire and said second wire is greater than a distance between said semiconductor substrate and said first wire.

8. The solid-state imaging device according to claim 1, wherein a distance between said first wire and said second wire is 0.5 to 2 times as long as a length of a short side (width) of said first wire.

9. The solid-state imaging device according to claim 1, wherein a resin layer is formed above said first wire and said second wire.

10. A signal charge detection device comprising: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light;an amplifier which is operable to convert the signal charges held in said floating diffusion capacity unit into a voltage;a first wire which connects said floating diffusion capacity unit to an input of said amplifier; anda second wire which is made of the same material as said first wire, formed in the same layer as said first wire, arranged around to said first wire at least along long sides of said first wire, and electrically insulated from said first wire.

11. A camera comprising a solid-state imaging device, wherein said solid-state imaging device includes:a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light;an amplifier which is operable to convert the signal charges held in said floating diffusion capacity unit into a voltage;a first wire which connects said floating diffusion capacity unit to an input of said amplifier; anda second wire which is made of the same material as said first wire, formed in the same layer as said first wire, arranged around said first wire at least along long sides of said first wire, and electrically insulated from said first wire.