Solid state imaging device

Abstract

A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction; and a plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes. Each of the vertical transfer registers includes a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel. Each of the shunt interconnections is configured to surround the light receiving portions and having windows that expose the light receiving portions.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating an imaging section of a solid state imaging device according to a first embodiment of the present invention.

FIGS. 2A and 2B are sectional views taken along the lines IIa-IIa and IIb-IIb shown in FIG. 1, respectively, illustrating the imaging section of the solid state imaging device according to the first embodiment of the present invention.

FIG. 3 is a plan view illustrating an imaging section of a solid state imaging device according to a modification of the first embodiment of the present invention.

FIG. 4 is a plan view illustrating an imaging section of a solid state imaging device according to a modification of the first embodiment of the present invention.

FIG. 5 is a plan view illustrating an imaging section of a solid state imaging device according to a second embodiment of the present invention.

FIGS. 6A and 6B are sectional views taken along the lines VIa-VIa and VIb-VIb shown in FIG. 5, respectively, illustrating the imaging section of the solid state imaging device according to the second embodiment of the present invention.

FIG. 7 is a plan view illustrating an imaging section of a conventional solid state imaging device.

Claims

1. A solid state imaging device comprising: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity;a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction, each of the vertical transfer registers including a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel; anda plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes, each of the shunt interconnections being configured to surround the light receiving portions and having windows that expose the light receiving portions.

2. The solid state imaging device of claim 1, wherein the light receiving portions and the windows are shaped to have at least a symmetry axis along the line direction and a symmetry axis along the column direction when viewed in plan andeach of the light receiving portions is concentric with the corresponding window.

3. The solid state imaging device of claim 2, wherein the windows are rectangular-shaped when viewed in plan.

4. The solid state imaging device of claim 2, wherein the windows are shaped to have a four-fold or more rotational symmetry when viewed in plan.

5. The solid state imaging device of claim 4, wherein the windows are square-shaped when viewed in plan.

6. The solid state imaging device of claim 4, wherein the windows are round-shaped when viewed in plan.

7. The solid state imaging device of claim 1, wherein a boundary region between adjacent two shunt interconnections is positioned above the vertical transfer channel.

8. The solid state imaging device of claim 1 further comprising: an interlayer insulating film formed between the vertical transfer electrodes and the shunt interconnections; anda plurality of via plugs formed in the interlayer insulating film to electrically connect the vertical transfer electrodes to the corresponding shunt interconnections, whereinthe via plugs are formed not to overlap the vertical transfer registers.

9. The solid state imaging device of claim 1 further comprising: a light shield film formed between the vertical transfer electrodes and the shunt interconnections to block the entrance of light into a region of the substrate other than the light receiving portions.

10. The solid state imaging device of claim 1 further comprising: a supplementary light shield film formed on the shunt interconnections to block the entrance of light into boundary regions between the shunt interconnections.