1. Field of the Invention
The present invention relates to diode pumped solid-state laser amplifiers. More specifically, the present invention relates to a laser disk folded amplifier architecture wherein a series stack of laser gain disks are oriented at an angle of incidence that is perpendicular or approximately perpendicular to the propagation direction of a laser beam having a predetermined wavelength.
2. Description of Related Art
Solid state-laser amplifier technology is a well-developed field wherein numerous modes of operation and embodiments have been demonstrated. One of the embodiments comprises conventional disk architecture wherein pump arrays (e.g., rows of flash lamps or diode-laser arrays) are situated in planes located on either side of one or more disk amplifiers. The disks themselves are tilted at Brewster's angle with respect to the laser beam. This is the angle at which a p-polarized laser beam experiences no reflection losses at the input and output surface of each amplifier disk. This approach was invented to scale solid state lasers to very large beam apertures, and it has served the world very well in large, single shot systems.
However, non-uniform pumping due to Brewster angle architecture generates deleterious wavefront distortions caused by the non-uniform distribution of waste heat from the optically pumping process. The result of such thermal gradients is bulk thermal deformation, an undesired change in the index of refraction, and stress in the material, all of which contribute to optical distortions of the transmitted wavefront of a laser beam to be amplified.
Several techniques have been utilized to mitigate the effects of thermal gradients during Brewster angle laser operation. First, diode pumping to match absorption lines of dopant ions in the gain materials of laser disks, reduces the amount of waste heat generated. Second, convective gas flow across the surfaces of the gain material can help dissipate heat-generated gradients. Background for such a method is described by Sutton, et al., in “Heat Removal in a Gas Cooled Solid-State Laser Disk Amplifier,” AIAA Journal, Vol. 30, No. 2, pp. 431-435, (1992). Another technique is to allow a laser gain medium to temporarily store the deposited heat. During laser operation, the active laser gain medium will heat up until it reaches some maximum acceptable temperature. The cooling cycle is then begun, in the absence of lasing, and elapsed time between periods of laser operation depends largely on the efficiency of the cooling of the laser during the suspended lasing action. Background for this concept is described and claimed in U.S. Pat. No. 5,526,372, issued Jun. 11, 1996 to Albrecht, et al., and assigned to the assignee of the instant application. Regardless of which technique is applied, thermal gradients that produce bulk thermal deformation, changes in the index of refraction, and stress due to non-uniform pumping of Brewster angle disk amplifier architectures continues to be a problem in high-average power solid-state laser systems.
The emergence of high average power diode arrays beyond the conventional technologies in which typically only a single laser diode bar was attached to a single high performance heat sink have enabled monolithic laser diode packages in which multiple diode bars are attached to a single high performance heat sink. This technology advance has led to larger laser diode arrays and larger diode-pumped laser systems that are capable of emitting pump light at nonzero emission angles, which may be utilized to solve current non-uniform optical pumping as discussed above. Background for one such type of package, which utilizes Silicon Monolithic Microchannels (i.e., SiMM) is described and claimed in U.S. Pat. No. 5,548,605 issued Aug. 20, 1996 to Benett, et al., U.S. Pat. No. 5,828,683 issued Oct. 27, 1998 to Freitas, and U.S. Pat. No. 5,923,481 issued Jul. 13, 1999 to Skidmore, et al., and assigned to the assignee of the instant application.
SiMM technology incorporates the formation of V-grooves for positioning and mounting of laser diode bars by Anistropic etching of silicon substrates. In <110> oriented silicon wafers, (the surface of the wafer is a <110> plane), etch rate differences can be exploited to etch channels that are perpendicular to the surface of the wafer. This is accomplished by creating a mask on the surface of the wafer that is aligned with the <111> planes on the wafer. When etched, these slow-etching, perpendicular <111> planes then become the walls of the channels. With the appropriate angular orientation of an etch mask on a <110> oriented silicon wafer, the result of the above etching method is to produce V-grooves, wherein laser emitting diodes or laser diode bars are attached to the slanted surfaces, i.e., the <111> plane, and as such are oriented to produce an emission direction in a very specific way relative to the <110> normal direction (e.g., 55 degrees).
SiMM arrays with a 55 degree emission angle or any diode array with a nonzero emission angle, measured from the normal to the array surface are useful in pump configurations that are integrated in normal incidence large aperture laser disk architectures. Such architectures provide better energy extraction efficiencies, better beam quality despite any residual thermal gradients in the laser gain disks, polarization independent extraction, and denser, compact system packaging.
Accordingly, the present invention provides a solid-state laser amplifier operated at substantially a normal-incidence angle that is uniformly optically pumped at a selected angle θ.
Another aspect of the present invention is to provide a solid-state laser disk amplifier architecture wherein one or more laser disks can be stacked at substantially a normal incidence angle while uniformly optically pumped at a selected angle θ by a diode pump array surface.
A further aspect of the present invention is to provide a method of uniformly optically pumping a normal incidence stack solid-state laser disk amplifier.
Thus, the present invention addresses the problems associated with high repetition rate, diode array or conventional flash-lamp pumped, high-power solid state lasers by replacing the classical Brewster angle disk amplifier architecture by an architecture in which the disks are oriented substantially perpendicular to an incident beam. The normal incidence orientation due to uniform optical diode array pumping of the present invention has increased the power/energy per disk, laser efficiency, and decreased the manner in which slab perturbations imprint themselves as optical beam distortions in the transmitted wavefront.
Finally, the beam propagation is no longer restricted to only one direction of polarization, and the laser becomes so much more amenable to robust packaging wherein rugged field applications now become realistically possible.
The accompanying drawings, which are incorporated into and form a part of the disclosure, illustrate an embodiment of the invention and, together with the description, serve to explain the principles of the invention.
FIGS. 1(a-b) illustrates the conventional disk amplifier architecture wherein the pump arrays are in the x-z planes located on either side of laser gain disks oriented at Brewster's angle.
FIG. 2(a) shows Normal Incidence Stack (NISA) geometry.
FIG. 2(b) illustrates a generic representation of four-sided laser gain disk pumping.
FIG. 2(c) details an laser gain disk being pumped off the horizontal axis by diode array surface and illustrates how the pumping design interlocks with adjacent laser gain disks.
FIG. 2(d) shows the basic concept of SiMM and V-BASIS technology.
General Description
The present invention provides an apparatus and a resulting method for operating a laser disk amplifier architecture in a uniformly optically pumped normal incidence mode.
The interest of disk amplifiers, in which the conventional architecture of the active material is in the form of separate slabs or disks set at Brewster's angle, centered on the attractive means of producing a high average power solid-state laser without encountering the problems that beset large-rod amplification systems.
Specific Description
a-c illustrates the present invention in its most fundamental embodiment (herein referred to as a normal-incidence-stack disk amplifier 20 (NISA)). As shown in
b illustrates the generic case that any pump array configuration which has pump light A, B, C, D incident on laser gain disk 24i from four directions as indicated, will provide suitable pump light absorption within the disk. As opposed to the classical Brewster's angle arrangement, 14 in
c shows an example of optically pumping a laser gain disk 24i in a normal-incidence-stack disk amplifier 20. In this embodiment, exemplary diode array surfaces 28, 30, 36, 38 emit pump radiation A, B, C, D at an angle off the horizontal plane, (i.e., off of the z-direction 23, which is collinear to a beam 26 propagation direction) because of the construction principles of diode pump array technology, such as exemplified in SiMM architecture. Examples of Simm architecture are described and claimed as stated herein before, in U.S. Pat. No. 5,548,605 issued Aug. 20, 1996 to Benett, et al., U.S. Pat. No. 5,828,683 issued Oct. 27, 1998 to Freitas, and U.S. Pat. No. 5,923,481 issued Jul. 13, 1999 to Skidmore, et al., and assigned to the assignee of the instant application. However, any diode array with a nonzero emission angle, measured from the normal to an array surface, can be successfully applied to the present invention. The pumping by four diode pump array surfaces 28, 30, 36, 38 in
d shows the basic concept of SiMM and V-BASIS technology, as discussed above, that make up diode array surfaces, e.g., 28, 30, 32, 34, as shown in FIG. 2A. In
It should be noted that another difference between the classical Brewster's angle laser gain disk 14 shown in
There are a variety of other useful benefits that come with normal-incidence stack architecture. First, normal-incidence stack architecture reduces polarization effects. Brewster's angle disks 14 in
Second, normal-incidence stack architecture results in smaller beam distortions in the transmitted wavefront. There are two principal sources of thermally-induced optical distortions in solid-state amplifiers: (1) variations in the refractive index due to temperature and stress and (2) dimensional changes in the laser gain medium caused by the coefficient of thermal expansion (positive or negative). For the case of large aperture Brewster disks 14 in
In addition, thermal distortions experienced in a Brewster disk architecture imprint themselves on the transmitted beam wavefront to order linear in αT. Here, α is the coefficient of thermal expansion of the disk, ΔT is the temperature difference between two points on the disk which arises from pump deposition non-uniformities. Typical magnitudes of αΔT are of order 10−3 to 10−4. The derived expression also shows that for case of the normal-incidence-stack architecture, where disks are oriented perpendicular to the beam, the same distortions imprint themselves on the beam only to order (αΔT)2, which now is of order 10−6 to 10−8. It is through this simple but effective mechanism, that the beam distortions in a normal-incidence-stack architecture are orders of magnitude smaller than in a Brewster disk architecture, for the same slab distortions. A second consideration applies even in the absence of thermally-induced optical distortions. A useful power oscillator geometry for extracting energy from a large aperture amplifier is the unstable resonator. In the case of the unstable resonator, the extraction beam continuously diverges through the amplifier from pass to pass until the high power beam escapes from the cavity. The normal-incidence-disk architecture does not introduce the astigmatic beam distortion which is intrinsic to a diverging beam propagating through a Brewster angle disk and is therefore ideally suited for use in an unstable resonator geometry, (an unstable resonator makes use of deliberately diverging laser wavefronts as the output coupling mechanism).
A preferred embodiment, configured as a power oscillator, of a normal-incidence stack laser-disk resonator 30 is exemplified in
In the preferred power oscillator method of the present invention, diode arrays 63 begin to pump laser disks 61, causing their optical gain to increase. As the stored energy in disks 61 increases, small amounts of a spontaneous emitted radiation (not shown) emerges from the disks. In an exemplary power oscillator mode of operation, this spontaneous emitted radiation (not shown) is trapped by laser-disk resonator 30 as formed by output coupler 73 and high reflector 74. As the weak spontaneous emitted radiation (not shown) makes roundtrip reflective bounces between output coupler 73 and high reflector 74, it is amplified by the optical gain in amplifier disks 61, reaching high powers of at least 5 kW. Each time the circulating beam reflects from output coupler 73, a portion of beam 66 exits laser-disk resonator 30, forming output beam 66. Beam 66 coupled out through output coupler 73 can transmit through a partially reflecting optical coating, (not shown), or around past the edges of a mirror (not shown) that is smaller than an output aperture (not shown) such as in the case of an unstable resonator. Although output coupler 73 and/or a predetermined geometry, such as an unstable resonator, can operate as a means for extracting energy from resonator 30, any means of extracting energy, such as a passive quarter wave rotator and a polarizing beamsplitter 76 can also be employed without departing from the scope of the invention. In addition, passive quarter wave rotator and a polarizing beamsplitter 76 is capable of being substituted with optical devices known in the art, such as optical Q-switches and/or optical modulators to enable resonator 30 to be operated in a Q-switched, cavity dumped and/or mode locked condition.
Although the preferred embodiment of the present invention is that of a power oscillator 30 as illustrated in
Features and advantages of the present invention will become apparent from the following description. Applicants are providing this description, which includes drawings and examples of specific embodiments, to give a broad representation of the invention. Various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this description and by practice of the invention. The scope of the invention is not intended to be limited to the particular forms disclosed and the invention covers all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the claims.
This application claims the benefit of U.S. Provisional Application No. 60/300,325, filed Jun. 22, 2001, and entitled, “A New Solid State Laser Disk Amplifier Architecture: The Normal-Incidence-Stack,” which is incorporated herein by this reference.
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.
Number | Name | Date | Kind |
---|---|---|---|
5526372 | Albrecht et al. | Jun 1996 | A |
5546222 | Plaessmann et al. | Aug 1996 | A |
5548605 | Benett et al. | Aug 1996 | A |
5643252 | Waner et al. | Jul 1997 | A |
5839446 | Waner et al. | Nov 1998 | A |
5912910 | Sanders et al. | Jun 1999 | A |
6381392 | Hayden et al. | Apr 2002 | B1 |
6414973 | Hwu et al. | Jul 2002 | B1 |
6418156 | Peressini | Jul 2002 | B1 |
6466593 | Fukumoto | Oct 2002 | B1 |
6556339 | Smith et al. | Apr 2003 | B2 |
6570902 | Peressini | May 2003 | B2 |
Number | Date | Country | |
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20030053508 A1 | Mar 2003 | US |
Number | Date | Country | |
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60300325 | Jun 2001 | US |