Claims
- 1. A process for forming a dielectric film on a substrate comprising:
depositing a coating solution on a surface of the substrate, the coating solution comprising a dielectric material and a formulation solvent; and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate.
- 2. The process of claim 1 wherein the aromatic aliphatic ether solvent is a solvent having the formula
- 3. The process of claim 1 wherein the aromatic aliphatic ether solvent is a solvent selected from the group consisting of anisole, methylanisole, phenetole and mixtures thereof.
- 4. The process of claim 1 wherein the dielectric material is a poly(arylene ether).
- 5. The process of claim 4 wherein the formulation solvent comprises an aromatic aliphatic ether.
- 6. The process of claim 4 wherein the poly(arylene ether) is selected from the group consisting of a polymer of the formulas:
- 7. The process of claim 6 wherein the formulation solvent is an aromatic aliphatic ether.
- 8. The process of claim 4 wherein the poly(arylene ether) is selected from the group consisting of a polymer of the formula:
- 9 The process of claim 8 wherein the formulation solvent is an aromatic aliphatic ether.
- 10. The process of claim 1 wherein the dielectric material is selected from the group consisting of poly(arylene ether) (PAE), poly(arylene ether ether ketone) (PAEEK), poly(arylene ether ether acetylene) (PAEEA), poly(arylene ether ether acetylene ether ether ketone) (PAEEAEEK), poly(arylene ether ether acetylene ketone) (PAEEAK), poly(naphthenyl ether) (PNE), and phenyl-ethynylated aromatic monomers and oligomers.
- 11. The process of claim 1 wherein the dielectric material is an organohydridosiloxane resin having a general formula:
- 12. The process of claim 1 wherein the dielectric material is a partially hydrolyzed and partially condensed alkoxysilane composition, and wherein the process further comprises curing the alkoxysilane composition to form a nanoporous dielectric silica coating.
- 13. The process of claim 1 wherein the dielectric material is a spin-on-glass material.
- 14. The process of claim 1 wherein the dielectric material is poly(perhydrido)silazane.
- 15. The process of claim 14 wherein the formulation solvent is an aromatic aliphatic ether.
- 16. The process of claim 1 further comprising rinsing the wafer backside using an aromatic aliphatic ether solvent.
- 17. The process of claim 1 further comprising rinsing parts of the coating equipment using an aromatic aliphatic ether solvent.
- 18. The process of claim 17 wherein the process is performed on a spin coater and wherein rinsing parts of the coating equipment comprises spin-coater cup rinsing and nozzle rinsing.
- 19. A polymeric solution comprising an inorganic spin-on polymer dissolved in an aromatic aliphatic ether solvent.
- 20. The solution of claim 19 wherein the polymer is poly(perhydrido)silazane.
- 21. The solution of claim 19 wherein the solvent is a solvent having the formula
- 22. The solution of claim 19 wherein the solvent is selected from the group consisting of anisole, methylanisole, phenetole and mixtures thereof.
- 23. A microelectronic device comprising a dielectric film formed on a substrate by the process comprising:
depositing a coating solution on a surface of the substrate, the coating solution comprising a dielectric material and a formulation solvent; and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate.
RELATED APPLICATIONS
[0001] This application is a continuation-in-part of U.S. patent application Ser. No. 09/235,141 entitled “Solvent Systems for Low Dielectric Constant Polymeric Materials,” filed Jan. 21, 1999.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09340976 |
Jun 1999 |
US |
Child |
10143039 |
May 2002 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09235141 |
Jan 1999 |
US |
Child |
09340976 |
Jun 1999 |
US |