The present invention relates to materials and structures for thin film electroluminescent devices, and more particularly the present invention relates to sphere-supported thin film phosphor electroluminescent (SSTFEL) devices.
Thin film electroluminescent (TFEL) devices typically consist of a laminar stack of thin films deposited on an insulating substrate. The thin films include a transparent electrode layer and an electroluminescent (EL) layer structure, comprising an EL phosphor material sandwiched between a pair of insulating layers. A second electrode layer completes the laminate structure. In matrix addressed TFEL panels the front and rear electrodes form orthogonal arrays of rows and columns to which voltages are applied by electronic drivers, and light is emitted by the EL phosphor in the overlap area between the rows and columns when sufficient voltage is applied in excess of a voltage threshold.
TFEL devices have the advantages of long life (50,000 hours or more to half brightness), wide operating temperature range, high contrast, wide viewing angle and high brightness.
In designing an EL device, a number of different requirements have to be satisfied by the substrates, the laminate layers and the interfaces between these layers. To enhance electroluminescent performance, the dielectric constants of the insulator layers should be high. To work reliably however, self-healing operation is desired, in which electric breakdown is limited to a small localized area of the EL device: The electrode material covering the dielectric layer fails at the local area, preventing further breakdown. Only certain dielectric and electrode combinations have this self-healing characteristic. At the interface between the phosphor and insulator layers, compatibility between materials is required to promote charge injection and charge trapping, and to prevent the interdiffusion of atomic species under the influence of the high electric fields during operation, and also at the temperatures required to fabricate the EL device.
Standard EL thin film insulators, such as SiO2, Si3N4, Al2O3, SiOxNy, SiAlOxNy and Ta2O5 typically have relative dielectric constants (K) in the range of 3 to 60 which we shall refer to as low K dielectrics. These dielectrics do not always provide optimum EL performance due to their relatively low dielectric constants. A second class of dielectrics, called high K dielectrics, offer higher performance. This class includes materials such as SrTiO3, BaTiO3, PbTiO3 which have relative dielectric constants generally in the range of 100 to 20,000, and are crystalline with the perovskite structure. While all of these dielectrics exhibit a sufficiently high figure of merit (defined as the product of the breakdown electric field and the relative dielectric constant) to function in the presence of high electric fields, not all of these materials offer sufficient chemical stability and compatibility in the presence of high processing temperatures that may be required to fabricate an EL device. Also, it is difficult to form high dielectric constant insulating jayers as thin films with good breakdown protection.
Substrates are also of fundamental importance for TFEL devices. Glass substrates are in commercial production. At temperatures significantly higher than 500° C., glass softens and mechanical deformation may occur due to stresses within the glass. For this reason, the maximum processing temperature of TFEL phosphors is of great significance. Yellow-emitting ZnS:Mn TFEL displays are compatible with glass substrates, however, many TFEL phosphors require higher processing temperatures. Example include blue emitting BaAl2S4:Eu, which is typically annealed at 750° C. (Noboru Miura, Mitsuhiro Kawanishi, Hironaga Matsumoto and Ryotaro Nakano, Jpn. J. Appi. Phys., Vol.38 (1999) pp. L1291-L1292), and green-emitting Zn2Si0.5Ge0.5O4:Mn, which is annealed at 7000° C. or more (A. H. Kitai, Y. Zhang, D. Ho, D. V. Stevanovic, Z. Huang, A. Nakua, Oxide Phosphor Green EL Devices on Glass Substrates, SID 99 Digest, p596-599).
Substrates other than glass may be used, and Wu in U.S. Pat. No. 5,432,015 teaches the application of ceramic substrates such as alumina sheets for TFEL devices. In such devices, thick film, high dielectric constant dielectrics are prepared. These dielectrics are in the range of 20 μm thick and are deposited by a combination of screen printing and sol-gel methods onto metallized alumina substrates, and are generally based on lead-containing materials such as PbTiO3 and related compounds. Although, due to their thickness, these dielectrics offer good breakdown protection, they limit the processing temperature of phosphors that are on top of the dielectric layer, and phosphors that require processing temperatures of 700° C. or higher may be contaminated by the dielectric formulation at these temperatures. Also, substrate cost is much higher for ceramics than for glass, particularly for large size ceramics over ˜30 cm in length or width, since cracking and warping of large ceramic sheets is hard to control.
Although glass substrates may also be considered for processing temperatures at which they soften, (generally above 500 to 600° C.), warping or compaction of the glass will occur, particularly if longer annealing time are required.
Spray drying is a technique for ceramic synthesis that offers the ability to create spherical or almost spherical ceramic particles of a wide range of ceramic materials. It produces particles by atomizing a solution or slurry and evaporating moisture from the resulting droplets by suspending them in a hot gas. The schematic diagram of the spray drying apparatus is indicated in
The spray drying process mainly comprises four main steps, each of which influences the final product properties. The four steps are: slurry preparation, atomization, evaporation and particle separation.
In the case of spraying drying BaTiO3 particles, the quality of slurry has an important influence on the atomizing procedure and the properties of the final spherical particles (Stanley J. Lukasiewicz, “Spray-Drying Ceramic Powders”, J. Am. Ceram. Soc., 72(4) 617-624, 1989). The slurry is prepared from ultrafine BaTiO3 primary particles dispersed in distilled water. Care is taken to make sure of uniformly dispersed slurry. If aggregates are present, they must be eliminated through a milling procedure. If necessary, organic dispersant should be added into the slurry, which could be absorbed on the surface of the particles by coulombic or Van der Waals forces or hydrogen bonding to keep the slurry in the deflocculated state. Two important properties of slurry are volume percent of solid and viscosity of slurry. These two conflicting parameters must be optimized to obtain optimum spray-dried particles.
Atomization takes place in {circle around (2)} of
The main advantages of spray drying are spherical or near-spherical particle shape and closely controlled particle size distribution over range 10-500 μm (David. E. Oakley, “produce uniform particles by spray drying”, Chemical engineering progress, Oct., p48-54, 1997). The surface finish of spray-dried particles can be controlled by adjusting processing parameters. Grain size of the particles can be maintained in sub-micron range by adjusting the starting primary particles. Sintering of the ceramic particles is accomplished after spray drying, and grain growth is generally observed to depend on sintering temperature and time.
Flexible polymer substrates for electronic displays are desireable due to their low cost, low weight and robustness. For vehicles they also offer safety advantages in that glass-related injury is eliminated. Manufacturing of displays on flexible substrates also offers the promise of roll-to-roll processing which is a low cost volume production method.
EL devices on plastic substrates are well known in which a powder phosphor layer is deposited between two electrodes. These are known as powder EL devices that are used in low brightness lamps and backlights for liquid crystal displays.
Present powder EL lamps are based on ZnS:Cu (S. Chadha, Solid State Luminescence, A. H. kitai, editor, Chapman and Hall, pp. 159-227). In these powders, Cu2−xS forms inclusions as shown in
During operation, these Cu2−xS tips lose their sharpness, and the electric field decreases, resulting in weaker luminescence. In careful observation using an optical microscope, A. G. Fischer (A. G. Fischer, J. Electrochem. Soc., 118, 1396, 1971) saw comet-shaped light emission extending away from the tips, which decreased in length as the phosphor aged.
Other reports (S. Roberts, J. AppL Phys., 28, 245, 1957) suggested ion diffusion and linked deterioration of these phosphors to moisture.
The observed time-dependent luminance available from powder EL is shown in
By suitable co-activation in ZnS:Cu with Cl, Mn and other ions, the colour may be altered to achieve blue, green and yellow emission (see Table 1).
Therefore, it would be very advantageous to provide a TFEL device structure in which no high temperature substrate is necessary, and which offers mechanical flexibility. Such a device would possess the excellent stability, high brightness and threshold-voltage characteristics of TFEL devices, along with the low cost, light weight and robustness of a plastic substrate.
It is an object of the present invention to develop SSTFEL devices that include substantially spherical dielectric particles (preferably spherical BaTiO3 particles) and polymer substrates.
To achieve this objective, spherical spray-dried BaTiO3 particles were used as the starting material. After sintering and sieving, an oxide phosphor layer was deposited and annealed on the top surface of mono-dispersed BaTiO3 spheres. The phosphor-coated spheres were subsequently embedded into polypropylene film. This functional SSTFEL device was finished by depositing a front transparent ITO electrode and a rear gold electrode.
The present invention provides an electroluminescent display device, comprising;
a flexible, electrically insulated substrate having opposed surfaces;
an array of generally spherical dielectric particles embedded in the flexible, electrically insulated substrate with each of the spherical dielectric particles having a first portion protruding through one of the opposed surfaces and a second portion protruding through the other of said opposed surfaces;
an electroluminescent phosphor layer deposited on the first portion of each spherical dielectric particles;
a continuous electrically conductive, substantially transparent electrode layer located on the top surfaces of the electroluminescent phosphor layer and areas of the flexible electrically insulating substrate located between the top surfaces of the electroluminescent phosphor layer; and
a continuous electrically conductive electrode layer coated on the second portion of the spherical dielectric particles and areas of the flexible, electrically insulated substrate located between the second portions of the spherical dielectric particles, means for applying a voltage between the continuous electrically conductive, substantially transparent electrode layer and the continuous electrically conductive electrode layer.
The present invention also provides a capacitor, comprising;
a flexible, electrically insulated substrate having opposed surfaces;
an array of generally spherical dielectric particles embedded in the flexible, electrically insulated substrate with each of the spherical dielectric particles having a first portion protruding through one of the opposed surfaces and a second portion protruding through the other of said opposed surfaces;
a first continuous electrically conductive layer covering the first portion of the spherical dielectric particles and areas of the flexible electrically insulating substrate located between the first portions of the spherical dielectric particles;
a continuous electrically conductive electrode layer covering the second portions of the spherical dielectric particles and areas of the flexible, electrically insulated substrate located between the second portions of the spherical dielectric particles.
The present invention also provides a p-n semiconductor device, comprising;
a flexible, electrically insulated substrate having opposed surfaces;
an array of generally spherical semiconductor particles made of an n-type semiconductor embedded in the flexible, electrically insulated substrate with each of the spherical semiconductor particles having a first portion protruding through one of the opposed surfaces and a second portion protruding through the other of said opposed surfaces;
p-type semiconductor layer deposited on the first portion of each spherical semiconductor particles;
a first continuous electrically conductive electrode layer located on the top surfaces of the p-type semiconductor layer and areas of the flexible electrically insulating substrate located between the top surfaces of the p-type semiconductor layer; and
a second continuous electrically conductive electrode layer coated on the second portion of the spherical semiconductor particles and areas of the flexible, electrically insulated substrate located between the second portions of the spherical semiconductor particles, means for applying a voltage between the first and second continuous electrically conductive electrode layers.
The invention will now be described, by way of example only, reference being had to the accompanying drawings, in which:
a is cross-sectional view of another embodiment of an SSTFEL structure;
b is top view of an embodiment of SSTFEL structure;
The inventors have shown for the first time that thin film phosphor electroluminescent devices can be prepared using dielectric spheres, preferably BaTiO3 spheres for electroluminescent (EL) display applications. The device possesses a novel structure and is prepared through a special processing route in order to perform high temperature annealing processes required before applying the spheres into a low temperature substrate.
Any EL phosphor material may be used including but not limited to metal oxide or sulphide based EL materials. For example, the sulphide phosphor may be any one of ZnS:Mn or BaAl2S4:Eu, or BaAl4S7:Eu. The oxide phosphors may preferably be any one of Zn2Si0.5GeO.5O4:Mn, Zn2SiO4:Mn, or Ga2O3:Eu and CaAl2O4:Eu.
A specific embodiment of the SSTFEL structure that has been fabricated and tested is shown in
Details of a non-limiting, exemplary fabrication process will now be provided.
Spray-dried BaTiO3 particles used comprise NanOxidem™ HPB-1000 Barium Titanate Powder (Lot# BTA020516AC), which is produced by TPL, Inc. The particles had almost spherical shape, very smooth surface, and a large size distribution range of approximately 1˜120μm. While spherical particles are preferred, it will be understood that the particles do not need to be perfectly spherical and for example may be slightly ellipsoidal or flattened in shape.
Sintering of the as-received spheres was performed at 1120° C. for 2 hours in air within an open-end furnace. The shrinkage due to sintering is approximately 20%, grain size after sintering is 0.4˜0.8 μm and surface roughness is less than 0.5 μm. Sintered BaTiO3 spheres with size range of 53˜63μm were selected by U.S.A standard test sieves (Laval Lab Inc).
In order to make a specific positional arrangement of BaTiO3 spheres embedded in the polypropylene film, a pattern of circular depressions is used to hold BaTiO3 spheres on an alumina substrate during the sputtering, annealing and embedding processes. This pattern of circular depressions on a high purity Al2O3 plate is shown in
To provide a sufficient bond for each BaTiO3 sphere to stay in each pit, a polymer is melted into each pit first. In order to keep the alumina surface between pits from being covered by polymer, solid poly (α-methylstyrene) [PAMS, Mw=80, 800, d=1.075] powder is used to accomplish the patterning process, and is introduced into the pits and then melted. The PAMS powder is prepared by mechanical pulverization of PAMS pellets. Particle size is approximately in the range of 1˜10 μm. It has no specific melting point. There is a temperature range (˜50° C.) between softening point and fully melted state.
At room temperature, solid PAMS powder is put into each pit and there is little PAMS powder on the surface area among pits. Then, still at room temperature, BaTiO3 spheres are spread onto the Al2O3 plate to form one layer of a closed packed pattem. After increasing the temperature to ˜115° C., PAMS powder in each pit forms an adhesive gel. When BaTiO3 spheres are pressed gently, one sphere adheres to each pit. After cooling to room temperature, excess BaTiO3 spheres is brushed away, leaving the same pattern of spheres as that of pits indicated in
After patteming, the Al2O3 plate loaded with BaTiO3 spheres and is baked at 1000°C. for 10 minutes in air to bum off the PAMS completely. After baking, the spheres are still weakly adhered to the Al2O3 plate due to weak bonding forces that result from the bum-off of PAMS. The sticky force is large enough to keep the spheres stationary during the following sputtering, annealing and embedding processes.
A 50 nm thick Al2O3 barrier layer was first deposited on the top area of BT spheres by RF sputtering, followed by a green emitting Zn2Si0.5Ge0.5O4:Mn phosphor layer sputtered in the same chamber. The spheres were kept at 250° C. and the EL film thickness was about 800 μm. After sputtering, the spheres, still sitting on the Al2O3 plate, were annealed at 800° C. for 12 hours in vacuum with an oxygen pressure of 2.0×10−4Torr. This annealing procedure is to activate and crystallize the phosphor layer. The Al2O3 barrier layer improves the phosphor performance since it acts as a diffusion barrier between the BT and the phosphor.
After annealing, the procedure to embed phosphor-coated BaTiO3 spheres into a polypropylene film is shown in
After the resultant film of
It can be seen that the exposed top and bottom areas of the BT spheres are symmetric with the pp film. The thickness of the composite film is dependent on the original pp film thickness, BT sphere density, applied pressure and other processing parameters during the embedding process.
When an AC applied voltage is above the threshold value across the ITO and gold electrodes, the phosphor-coated top area of each individual BT sphere emits green EL. It is observed in prototype devices that the light-emitting area varies in each BT sphere due to variations of the size of BT spheres and the uniformity of the pp-BT composite film which also affects the size of the light-emitting area.
It should be noted that a transparent, thin film dielectric layer deposited on top of the phosphor layer is generally understood to improve the EL characteristics, and should be considered as within the scope of this invention. As mentioned above, although an oxide EL phosphor was used in some of the examples disclosed herein, other EL materials may be used such as sulphide phosphors.
The spheres may also be coated by thin film phosphor and dielectric layers using other methods. For example, instead of sputtering, films may be grown by evaporation or chemical vapour deposition techniques.
Rather than only coating the top portion of the spheres, the thin film EL phosphor and thin film dielectric layers may be coated uniformly on the entire surface of the spheres. This may be achieved by rolling the spheres during deposition, or by using a chemical vapour deposition process with the spheres in a fluid bed allowing the vapour stream to pass through the bed. After embedding the spheres into the polymer substrate the portion of the spheres protruding from the back of the polymer film may be etched in a weak acid, for example, to remove the thin films in this region, resulting in a structure very similar to that shown in
Dielectric materials other than barium titanate could be employed to make spheres such as strontium titanate (SrTiO3) and lead zirconium-titanates (Pb(Zr,Ti)O3), for example. The diameter of the spheres could be as small as about 5 microns or as large as about 500 microns.
Polymers other than polypropylene could be employed. Possible materials include polyethylene, polystyrene or polyester. In general, electrically insulating polymers capable of bonding to the spheres and being coated with electrode layers could be employed. For maximum contrast, or for specific applications black or coloured polymers could be considered, to give the resulting EL device a specific black or coloured appearance.
Spheres emitting several different colours could be deposited into the polymer in a spatially patterned manner. For example, red, green and blue emitting EL phosphors are known, and could be arranged in pixels to form an array of picture elements capable of representing colour images. Each pixel could consist of one sphere emitting each colour, or of many spheres emitting each colour. By depositing row and column electrodes appropriately placed relative to the various colour-emitting regions of the EL device, a colour EL display that can be addressed electronically may be realized, see FIGS. 12 to 14 showing details of fabricating such EL display arrays.
Patterning of the spheres of various colours could be achieved using well known printing methods for inks and toners. These include silk-screening and printing from metal plates, as well as the photocopying processes in which electrically charged toners are electrostatically patterned by means of a photosensitive plate or drum.
Spheres emitting various colours could be blended to achieve a desired pre-selected colour due to the combination of two or more colours.
Additional protective layers of suitable materials such as polymer or glass sheets could be added above and below the EL device to provide electrical protection or to provide for a sealed device.
An improvement to the device of
It is also anticipated by the inventors that alternative uses of the spherical structures provided herein exist. For example, referring to
The portion of the spheres protruding from the back of the polymer film could also be used to advantage. For-example, a thin film of a suitable semiconducting material could be grown such that it provided switching characteristics to improve the matrix addressing properties of a display device which had many row and column electrodes. Other switching devices could also be formed by a patterning process on the said portion of the spheres to create circuitry capable of controlling the electric current flowing through each sphere, or allowing each sphere to become a device that could store information relevant to its brightness level.
In the examples presented above, the portions of the spheres protruding from the front and back of the polymer film were about equal in area. However if in
All the above description relates to visual display applications of this technology. With appropriate modifications, other applications could include flexible capacitors. The capacitor would be formed as shown at 50 in
As used herein, the terms “comprises” and “comprising” are to be construed as being inclusive and open ended, and not exclusive. Specifically, when used in this specification including claims, the terms “comprises” and “comprising” and variations thereof mean the specified features, steps or components are included. These terms are not to be interpreted to exclude the presence of other features, steps or components.
The foregoing description of the preferred embodiments of the invention has been presented to illustrate the principles of the invention and not to limit the invention to the particular embodiment illustrated. It is intended that the scope of the invention be defined by all of the embodiments encompassed within the following claims.
This patent application claims the priority benefit from U.S. Provisional Patent Application Ser. No. 60/500,375 filed on Sep. 5, 2003 entitled SPHERE-SUPPORTED THIN FILM PHOSPHOR ELECTROLUMINESCENT DEVICES, and which is incorporated herein in its entirety.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/CA04/01592 | 9/3/2004 | WO | 10/25/2006 |
Number | Date | Country | |
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60500375 | Sep 2003 | US |