Number | Date | Country | Kind |
---|---|---|---|
93830482 | Nov 1993 | EP |
Number | Name | Date | Kind |
---|---|---|---|
3805095 | Lee et al. | Apr 1974 | A |
4000429 | Yoshida et al. | Dec 1976 | A |
4096382 | Numata et al. | Jun 1978 | A |
4307307 | Parekh | Dec 1981 | A |
4754168 | Liran | Jun 1988 | A |
4843265 | Jiang | Jun 1989 | A |
4914316 | Rossi et al. | Apr 1990 | A |
4920280 | Cho et al. | Apr 1990 | A |
4947056 | Jinbo | Aug 1990 | A |
Entry |
---|
Patent Abstracts of Japan, vol. 10, No. 127, (P-455 (2184) May 13, 1986, and JP-A-60 252 923 (Hitachi K.K.) Dec. 13, 1985. |
Patent Abstracts of Japan vol.10 No. 111 (P-451) (2168) Apr. 25, 1986, and JP-A-60 243 717 (Hitachi K.K.). |
Oguey et al., “MOS Voltage Reference Based on Polysilicon Gate Work Function Difference,” IEEE Journal of Solid-State Circuits, vol. SC-15, No. 3, Jun. 1980, pp. 264-269. |