Claims
- 1. A stacked capacitor comprising:a first electrode; a plug for electrically accessing the first electrode, the plug being coupled to the first electrode; a barrier layer disposed inside material of the first electrode for preventing diffusion of materials which reduce conductivity between the first electrode and the plug; and a second electrode separated from the first electrode by a dielectric layer.
- 2. The stacked capacitor as recited in claim 1, wherein the barrier layer includes a nitrogen layer.
- 3. The stacked capacitor as recited in claim 2, wherein the barrier layer is between about 50 Å and about 150 Å in thickness.
- 4. The stacked capacitor as recited in claim 1, wherein the barrier layer has a thickness that prevents diffusion and permits electrical conduction therethrough.
- 5. The stacked capacitor as recited in claim 1, wherein an additional diffusion barrier is included between the plug and the electrode.
- 6. The stacked capacitor as recited in claim 5, wherein the additional diffusion barrier is between about 100 Å and about 500 Å in thickness.
- 7. The stacked capacitor as recited in claim 5, wherein the additional diffusion barrier includes TaSiN.
- 8. The stacked capacitor as recited in claim 1, wherein the first electrode includes platinum.
- 9. The stacked capacitor as recited in claim 1, wherein the plug includes polysilicon.
- 10. A stacked capacitor comprising:a first electrode; a plug for electrically accessing the first electrode, the plug being coupled to the first electrode; a barrier region disposed within the plug for preventing diffusion of materials which reduce conductivity between the first electrode and the plug, the barrier region including a dielectric layer mixed with conductive materials from adjacent conductive regions to permit electrical conduction through the barrier region; and a second electrode separated from the first electrode by a capacitor dielectric.
- 11. The stacked capacitor as recited in claim 10, wherein the barrier region includes at least one of Si, C, N and Ge.
- 12. The stacked capacitor as recited in claim 10, wherein the barrier region has a thickness that prevents diffusion and permits electrical conduction therethrough.
- 13. The stacked capacitor as recited in claim 10, wherein an additional diffusion barrier is included between the plug and the electrode.
Parent Case Info
This is a divisional of application Ser. No. 09/074,882 filed on May 8, 1998 now U.S. Pat. No. 6,046,059 issued Apr. 4, 2000.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5828129 |
Roh |
Oct 1998 |
|