Patent Grant
9136818
Transducers generally convert electrical signals to mechanical signals or vibrations, and/or mechanical signals or vibrations to electrical signals. Acoustic transducers, in particular, convert electrical signals to acoustic signals (sound waves) in a transmit mode and/or convert received acoustic waves to electrical signals in a receive mode. Acoustic transducers generally include acoustic resonators, such as thin film bulk acoustic resonators (FBARs), surface acoustic wave (SAW) resonators or bulk acoustic wave (BAW) resonators, and may be used in a wide variety of electronic applications, such as cellular telephones, personal digital assistants (PDAs), electronic gaming devices, laptop computers and other portable communications devices. For example, FBARs may be used for electrical filters and voltage transformers. Generally, an acoustic resonator has a layer of piezoelectric material between two conductive plates (electrodes), which may be formed on a thin membrane. FBAR devices, in particular, generate longitudinal acoustic waves and lateral (or transverse) acoustic waves when stimulated by an applied time-varying electric field, as well as higher order harmonic mixing products. The lateral modes and the higher order harmonic mixing products may have a deleterious impact on functionality.
A stacked bulk acoustic resonator (SBAR), also referred to as a double bulk acoustic resonator (DBAR), includes two layers of piezoelectric materials between three electrodes in a single stack, forming a single resonant cavity. That is, a first layer of piezoelectric material is formed between a first (bottom) electrode and a second (middle) electrode, and a second layer of piezoelectric material is formed between the second (middle) electrode and a third (top) electrode. Generally, the stacked bulk acoustic resonator device allows reduction of the area of a single bulk acoustic resonator device by about half.
In FBAR devices, mitigation of acoustic losses at the boundaries and the resultant mode confinement in the active region of the FBAR (the region of overlap of the top electrode, the piezoelectric layer, and the bottom electrode) has been effected through various methods. Notably, frames are provided along one or more sides of the FBARs. The frames create an acoustic impedance mismatch that reduces losses by reflecting desired modes back to the active area of the resonator, thus improving the confinement of desired modes within the active region of the FBAR.
While the incorporation of frames has resulted in improved mode confinement and attendant improvement in the quality (Q) factor of the FBAR, direct application of known frame elements has not resulted in significant improvement in mode confinement and Q of known DBARs.
What is needed, therefore, is a DBAR that overcomes at least the known shortcomings described above.
The illustrative embodiments are best understood from the following detailed description when read with the accompanying drawing figures. It is emphasized that the various features are not necessarily drawn to scale. In fact, the dimensions may be arbitrarily increased or decreased for clarity of discussion. Wherever applicable and practical, like reference numerals refer to like elements.
It is to be understood that the terminology used herein is for purposes of describing particular embodiments only, and is not intended to be limiting. The defined terms are in addition to the technical and scientific meanings of the defined terms as commonly understood and accepted in the technical field of the present teachings.
As used in the specification and appended claims, the terms ‘a’, ‘an’ and ‘the’ include both singular and plural referents, unless the context clearly dictates otherwise. Thus, for example, ‘a device’ includes one device and plural devices.
As used in the specification and appended claims, and in addition to their ordinary meanings, the terms ‘substanial’ or ‘substantially’ mean to within acceptable limits or degree. For example, ‘substantially cancelled’ means that one skilled in the art would consider the cancellation to be acceptable.
As used in the specification and the appended claims and in addition to its ordinary meaning, the term ‘approximately’ means to within an acceptable limit or amount to one having ordinary skill in the art. For example, ‘approximately the same’ means that one of ordinary skill in the art would consider the items being compared to be the same.
In the following detailed description, for purposes of explanation and not limitation, specific details are set forth in order to provide a thorough understanding of illustrative embodiments according to the present teachings. However, it will be apparent to one having ordinary skill in the art having had the benefit of the present disclosure that other embodiments according to the present teachings that depart from the specific details disclosed herein remain within the scope of the appended claims. Moreover, descriptions of well-known apparatuses and methods may be omitted so as to not obscure the description of the illustrative embodiments. Such methods and apparatuses are clearly within the scope of the present teachings.
Generally, it is understood that the drawings and the various elements depicted therein are not drawn to scale. Further, relative terms, such as “above,” “below,” “top,” “bottom,” “upper” and “lower” are used to describe the various elements' relationships to one another, as illustrated in the accompanying drawings. It is understood that these relative terms are intended to encompass different orientations of the device and/or elements in addition to the orientation depicted in the drawings. For example, if the device were inverted with respect to the view in the drawings, an element described as “above” another element, for example, would now be below that element.
The present teachings relate generally to BAW resonator structures comprising DBARs. In certain applications, the BAW resonator structures provide DBAR-based filters (e.g., ladder filters). Certain details of DBARs, BAW resonator filters, materials thereof and their methods of fabrication may be found in one or more of the following commonly owned U.S. Patents and Patent Applications: U.S. Pat. No. 6,107,721, to Lakin; U.S. Pat. Nos. 5,587,620, 5,873,153, 6,507,983, and 7,629,865 to Ruby, et al.; U.S. Pat. No. 7,280,007, to Feng, et al.; U.S. Patent Publication No. 20070205850 to Jamneala, et al.; U.S. Pat. No 7,388,454, to Ruby, et al.; U.S. Patent Publication No. 20100327697 to Choy, et al.; and U.S. Patent Publication No. 20100327994 to Choy, et al. The disclosures of these patents and patent applications are specifically incorporated herein by reference. It is emphasized that the components, materials and method of fabrication described in these patents and patent applications are representative and other methods of fabrication and materials within the purview of one of ordinary skill in the art are contemplated.
A first electrode 107 is disposed over the substrate 105 and partially over the cavity 106 (or Bragg mirror). A planarization layer 107′ is provided over the substrate as shown. In a representative embodiment, the planarization layer 107′ comprises non-etchable borosilicate glass (NEBSG). A first piezoelectric layer 108 is disposed over the first electrode 107. A planarization layer 109 is disposed over the first piezoelectric layer 108 and generally does not overlap the cavity 106. In a representative embodiment, the planarization layer 109 comprises non-etchable borosilicate glass (NEBSG). As should be appreciated by one of ordinary skill in the art, the structure provided by the first electrode 107, the first piezoelectric layer 108 and a second electrode 111 is a bulk acoustic wave (BAW) resonator, which in this illustrative embodiment comprises a first BAW resonator of the DBAR 100. When the BAW resonator is disposed over a cavity, it is a so-called FBAR; and when the BAW resonator is disposed over an acoustic reflector (e.g., Bragg mirror) it is a so-called solidly mounted resonator (SMR). The present teachings contemplate the use of either FBARs or SMRs in a variety of applications, including filters (e.g., ladder filters comprising a plurality of BAW resonators).
A first bridge 110 is provided at an interface of a second electrode 111 and the planarization layer 109, and is disposed along all sides of the DBAR 100 (i.e., forms a perimeter of the DBAR 100). In representative embodiments first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) have a trapezoidal cross-sectional shape. It is emphasized that the trapezoidal cross-sectional shape of the bridges of the representative embodiments is merely illustrative and the bridges are not limited to a trapezoidal cross-sectional shape. For example, the cross-sectional shape of the bridges of the representative embodiments could be square or rectangular, or of an irregular shape. The “slanting” walls of first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) is beneficial to the quality of layers (e.g., the quality of the crystalline piezoelectric layer(s)) grown over the first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below). Notably, the first bridge 110 and the second bridge 104 (and other bridges described in connection with representative embodiments below) are not necessarily the same shape (e.g., one could have trapezoidal cross-sectional shape and one could have a rectangular cross-sectional in shape). Typical dimensions of the first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) are approximately 2.0 μm to approximately 10.0 μm in width (x-dimension in the coordinate system shown in
Generally, first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) need to be wide enough to ensure suitable decay of evanescent waves at the boundary of an active region 114 (also referred to herein as a DBAR region) and the decoupling region 113 in order to minimize tunneling of modes into a field region 115 where propagating modes exist at the frequency of operation. On the other hand, if the first and second bridges 110, 104 are too wide, reliability issues can arise and can also limit the placement of similar DBARs (not shown) from being placed in proximity (thus unnecessary increasing the total area of a chip). As such, the optimum width of the first and second bridges 110, 104 is determined experimentally.
In addition, the width and position of the first and second bridges 110, 104 (and other bridges described in connection with representative embodiments) and overlap 113 with the cavity 106 are selected to improve Q-enhancement of the odd resonant mode. In general, the greater the overlap 113 of each bridge 104, 110 with the cavity 106 of the DBAR 100, the greater the improvement Qo with the improvement realized being fairly small after an initial increase. The improvement in Qo must be weighed against a decrease in the electromechanical effective coupling coefficient kt2, which decreases with increasing overlap 113 of the first and second bridges 110, 104 with the cavity 106. Degradation of kt2 results in a degradation of insertion loss (S21) of a filter comprising DBARs. As such, the overlap 113 of the first and second bridges 110, 104 with the cavity 106 is typically optimized experimentally.
The first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) have a height (y-dimension in the coordinate system of
A second piezoelectric layer 112 is provided over the second electrode 111. The third electrode 101 is provided over the second piezoelectric layer 112. The second bridge 104 is disposed along all sides (i.e., along the perimeter) of the DBAR 100. As should be appreciated by one of ordinary skill in the art, the structure provided by the second electrode 111, the second piezoelectric layer 112 and the third electrode 101 is a (BAW) resonator, which in this illustrative embodiment comprises a second BAW resonator of the DBAR 100. As mentioned above, when the BAW resonator is disposed over a cavity, it is a so-called FBAR; and when the BAW resonator is disposed over an acoustic reflector (e.g., Bragg mirror) it is a so-called solidly mounted resonator (SMR). The present teachings contemplate the use of either FBARs or SMRs to form DBARs. The DBARs are contemplated for a variety of uses, including filters (e.g., ladder filters comprising a plurality of BAW resonators).
Illustratively, the first electrode 107, second electrode 111 and the third electrode 101 are tungsten (W) having a thickness of approximately 3000 A to approximately 10000 A. Other materials may be used for the first electrode 107, second electrode 111 and the third electrode 101, including but not limited to molybdenum (Mo) or a bi-metal material. Illustratively, the first piezoelectric layer 108 and the second piezoelectric layer 112 are aluminum nitride (AlN) having a thickness of approximately 5000 A to approximately 15000 A. Other materials may be used for the first piezoelectric layer 108 and the second piezoelectric layer 112, including but not limited to ZnO.
The first and second bridges 110, 104 are formed by patterning a sacrificial material over the first piezoelectric layer 108 and the second piezoelectric layer 112, and forming the depicted layers thereover. After the layers of the DBAR 100 are formed as desired, the sacrificial material is released leaving the first and second bridges 110, 104 “filled” with air. In a representative embodiment, the sacrificial material used to form the first and second bridges 110, 104 is the same as the sacrificial material used to form the cavity 106 (e.g., PSG).
In a representative embodiment, the first bridge 110 and the second bridge 104 define a perimeter along the active region 114 of the DBAR 100. The active region 114 thus includes the portions of the first BAW resonator and the second BAW resonator disposed over the cavity 106 and bounded by the perimeter provided by the first bridge 110 and the second bridge 104. As should be appreciated by one of ordinary skill in the art, the active region of the DBAR 100 is bordered around its perimeter by an acoustic impedance discontinuity created at least in part by the first and second bridges 110, 104, and above and below (cavity 106) by an acoustic impedance discontinuity due to the presence of air. Thus, a resonant cavity is beneficially provided in the active region of the DBAR 100. In certain embodiments, the first bridge 110 and the second bridge 104 are unfilled (i.e., contain air), as is the cavity 106. In other embodiments described more full below, the first bridge 110, or the second bridge 104, or both, are filled with a material to provide the desired acoustic impedance discontinuity.
It is noted that the first bridge 110, or the second bridge 104, or both, do not necessarily have to extend along all edges of the DBAR 100, and therefore not along the perimeter of the DBAR 100. For example, the first bridge 110 or the second bridge 104, or both, may be provided on four “sides” of the five-sided DBAR 100 shown in
The acoustic impedance mismatch provided by the first bridge 110 and the second bridge 104 causes reflection of acoustic waves at the boundary that may otherwise propagate out of the active region and be lost, resulting in energy loss. The first bridge 110 and the second bridge 104 serve to confine the modes of interest within the active region 114 of the DBAR 100 and reduce energy losses in the DBAR 100. Reducing such losses serves to increase the Q-factor (Qo) of the modes of interest in the DBAR 100. In filter applications of the DBAR 100, as a result of the reduced energy loss, the insertion loss (S21) is beneficially improved.
In the representative embodiment shown and described in connection with
The first electrode 107 is disposed over the substrate 105 and partially over the acoustic reflector 120. The planarization layer 107′ is provided over the substrate as shown. In a representative embodiment, the planarization layer 107′ comprises non-etchable borosilicate glass (NEBSG). The first piezoelectric layer 108 is disposed over the first electrode 107. The planarization layer 109 is disposed over the first piezoelectric layer 108 and generally does not overlap the acoustic reflector 120. In a representative embodiment, the planarization layer 109 comprises non-etchable borosilicate glass (NEBSG). As should be appreciated by one of ordinary skill in the art, the structure provided by the first electrode 107, the first piezoelectric layer 108 and a second electrode 111 is a bulk acoustic wave (BAW) resonator, which in this illustrative embodiment comprises a first BAW resonator of the DBAR 100.
The first bridge 110 is provided at an interface of the second electrode 111 and the planarization layer 109, and is disposed along all sides of the DBAR 100 (i.e., forms a perimeter of the DBAR 100). In representative embodiments first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) have a trapezoidal cross-sectional shape. It is emphasized that the trapezoidal cross-sectional shape of the bridges of the representative embodiments is merely illustrative and the bridges are not limited to a trapezoidal cross-sectional shape. For example, the cross-sectional shape of the bridges of the representative embodiments could be square or rectangular, or of an irregular shape. The “slanting” walls of first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) is beneficial to the quality of layers (e.g., the quality of the crystalline piezoelectric layer(s)) grown over the first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below). Notably, the first bridge 110 and the second bridge 104 (and other bridges described in connection with representative embodiments below) are not necessarily the same shape (e.g., one could have trapezoidal cross-sectional shape and one could have a rectangular cross-sectional in shape). Typical dimensions of the first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) are approximately 2.0 μm to approximately 10.0 μm in width (x-dimension in the coordinate system shown in
Generally, first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) need to be wide enough to ensure suitable decay of evanescent waves at the boundary of the active region 114 (also referred to herein as a DBAR region) and the decoupling region 113 in order to minimize tunneling of modes into a field region 115 where propagating modes exist at the frequency of operation. On the other hand, if the first and second bridges 110, 104 are too wide, reliability issues can arise and can also limit the placement of similar DBARs (not shown) from being placed in proximity (thus unnecessary increasing the total area of a chip). As such, the optimum width of the first and second bridges 110, 104 is determined experimentally.
In addition, the width and position of the first and second bridges 110, 104 (and other bridges described in connection with representative embodiments) and overlap 113 with the acoustic reflector 120 are selected to improve Q-enhancement of the odd resonant mode. In general, the greater the overlap 113 of each bridge 104, 110 with the acoustic reflector 120 of the DBAR 100, the greater the improvement Qo with the improvement realized being fairly small after an initial increase. The improvement in Qo must be weighed against a decrease in the electromechanical effective coupling coefficient kt2, which decreases with increasing overlap 113 of the first and second bridges 110, 104 with the acoustic reflector 120. Degradation of kt2 results in a degradation of insertion loss (S21) of a filter comprising DBARs. As such, the overlap 113 of the first and second bridges 110, 104 with the acoustic reflector 120 is typically optimized experimentally.
The first and second bridges 110, 104 (and other bridges described in connection with representative embodiments below) have a height (y-dimension in the coordinate system of
A second piezoelectric layer 112 is provided over the second electrode 111. The third electrode 101 is provided over the second piezoelectric layer 112. The second bridge 104 is disposed along all sides (i.e., along the perimeter) of the DBAR 100. As should be appreciated by one of ordinary skill in the art, the structure provided by the second electrode 111, the second piezoelectric layer 112 and the third electrode 101 is a (BAW) resonator, which in this illustrative embodiment comprises a second BAW resonator of the DBAR 100.
Illustratively, the first electrode 107, second electrode 111 and the third electrode 101 are tungsten (W) having a thickness of approximately 3000 A to approximately 10000 A. Other materials may be used for the first electrode 107, second electrode 111 and the third electrode 101, including but not limited to molybdenum (Mo) or a bi-metal material. Illustratively, the first piezoelectric layer 108 and the second piezoelectric layer 112 are aluminum nitride (AlN) having a thickness of approximately 5000 A to approximately 15000 A. Other materials may be used for the first piezoelectric layer 108 and the second piezoelectric layer 112, including but not limited to ZnO.
The first and second bridges 110, 104 are formed by patterning a sacrificial material over the first piezoelectric layer 108 and the second piezoelectric layer 112, and forming the depicted layers thereover. After the layers of the DBAR 100 are formed as desired, the sacrificial material is released leaving the first and second bridges 110, 104 “filled” with air.
In a representative embodiment, the first bridge 110 and the second bridge 104 define a perimeter along the active region 114 of the DBAR 100. The active region 114 thus includes the portions of the first BAW resonator and the second BAW resonator disposed over the acoustic resonator 120 and bounded by the perimeter provided by the first bridge 110 and the second bridge 104. As should be appreciated by one of ordinary skill in the art, the active region of the DBAR 100 is bordered around its perimeter by an acoustic impedance discontinuity created at least in part by the first and second bridges 110, 104, above by an acoustic impedance discontinuity due to the presence of air, and below by the acoustic reflector 120. Thus, a resonant cavity is beneficially provided in the active region of the DBAR 100. In certain embodiments, the first bridge 110 and the second bridge 104 are unfilled (i.e., contain air). In other embodiments described more fully below, the first bridge 110, or the second bridge 104, or both, are filled with a material to provide the desired acoustic impedance discontinuity.
It is noted that the first bridge 110, or the second bridge 104, or both, do not necessarily have to extend along all edges of the DBAR 100, and therefore not along the perimeter of the DBAR 100. For example, the first bridge 110 or the second bridge 104, or both, may be provided on four “sides” of the five-sided DBAR 100 shown in
The acoustic impedance mismatch provided by the first bridge 110 and the second bridge 104 causes reflection of acoustic waves at the boundary that may otherwise propagate out of the active region and be lost, resulting in energy loss. The first bridge 110 and the second bridge 104 serve to confine the modes of interest within the active region 114 of the DBAR 100 and reduce energy losses in the DBAR 100. Reducing such losses serves to increase the Q-factor (Qo) of the modes of interest in the DBAR 100. In filter applications of the DBAR 100, as a result of the reduced energy loss, the insertion loss (S21) is beneficially improved.
In the embodiments described presently, a single bridge is provided in an illustrative DBAR. The single bridge is provided at a single layer in each embodiment, and forms a perimeter that encloses the active region of the DBAR. By placing the bridge under different layers, the various embodiments can be studied to test the degree of coupling of modes in the active region (DBAR region) and the modes in the field region. Generally, the bridge decouples modes with a comparatively large propagation constant (kr) from the modes in the field region. As described below, certain embodiments comprise a “filled” bridge and certain embodiments comprise an “unfilled” bridge. Many details of the present embodiments are common to those described above in connection with the representative embodiments of
In the embodiments described presently, two bridges are provided in an illustrative DBAR. One bridge is provided in one layer of the DBAR and a second bridge is provided in another layer of the DBAR in each embodiment. The bridges are generally concentric, although not circular in shape, and are disposed about a perimeter that encloses the active region of the DBAR. By placing the bridges under different combinations of layers, the various embodiments can be studied to test the degree of coupling of modes in the active region 114 (DBAR region) and the modes in the field region 115. Generally, the bridge decouples modes with a comparatively large propagation constant (kr) from the modes in the field region 115. As described below, certain embodiments comprise a “filled” bridge and certain embodiments comprise an “unfilled” bridge.
An inner raised region 1101 is provided over the third electrode 101 in the active region 114. The inner raised region 1101 is separated from the edges of the active region by gaps 1102, each having a width (in the x-dimension of the coordinate system shown in
The combination of the first and second bridges 104, 110, the inner raised region 1101 and outer raised region 1103 further improves mode confinement in the active region 114 of the DBAR 1100.
The DBAR 1100 comprises a plurality of layers disposed over a substrate 105 having an acoustic reflector 1120. The acoustic reflector 1120 is a so-called Bragg mirror, and comprises alternating layers 1121-1126 of low acoustic impedance material and high acoustic impedance materials, with the “odd” numbered layers being low acoustic impedance materials and the “even” numbered layers being high acoustic impedance materials.
An inner raised region 1101 is provided over the third electrode 101 in the active region 114. The inner raised region 1101 is separated from the edges of the active region by gaps 1102, each having a width (in the x-dimension of the coordinate system shown in
In accordance with illustrative embodiments, BAW resonator structures comprising bridges and their methods of fabrication are described. One of ordinary skill in the art appreciates that many variations that are in accordance with the present teachings are possible and remain within the scope of the appended claims. These and other variations would become clear to one of ordinary skill in the art after inspection of the specification, drawings and claims herein. The invention therefore is not to be restricted except within the spirit and scope of the appended claims.
This application is a continuation-in-part application of commonly owned U.S. patent application Ser. No. 13/036,489 entitled “Coupled Resonator Filter Comprising Bridge” filed on Feb. 28, 2011 to Dariusz Burak. The present application claims priority under 35 U.S.C. §120 to U.S. patent application Ser. No. 13/036,489, the disclosure of which is hereby incorporated by reference in its entirety.
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| WO-0106646 | Jan 2001 | WO |
| WO-0106647 | Jan 2001 | WO |
| WO-0199276 | Dec 2001 | WO |
| WO-02103900 | Dec 2002 | WO |
| WO-03030358 | Apr 2003 | WO |
| WO-03043188 | May 2003 | WO |
| WO-03050950 | Jun 2003 | WO |
| WO-03058809 | Jul 2003 | WO |
| WO-2004034579 | Apr 2004 | WO |
| WO-2004051744 | Jun 2004 | WO |
| WO-2004102688 | Nov 2004 | WO |
| WO-2005043752 | May 2005 | WO |
| WO-2005043753 | May 2005 | WO |
| WO-2005043756 | May 2005 | WO |
| WO-2006018788 | Feb 2006 | WO |
| 2006079353 | Aug 2006 | WO |
| 2013065488 | May 2013 | WO |
| Entry |
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| Number | Date | Country | |
|---|---|---|---|
| 20120218055 A1 | Aug 2012 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13036489 | Feb 2011 | US |
| Child | 13074262 | US |
