Information
-
Patent Grant
-
6828881
-
Patent Number
6,828,881
-
Date Filed
Thursday, June 27, 200222 years ago
-
Date Issued
Tuesday, December 7, 200420 years ago
-
Inventors
-
Original Assignees
-
Examiners
- Pascal; Robert
- Glenn; Kimberly
Agents
-
CPC
-
US Classifications
Field of Search
US
- 333 204
- 333 25
- 333 26
- 333 185
-
International Classifications
-
Abstract
A stacked dielectric filter includes a filter section which has first and second input side resonant electrodes and first and second output side resonant electrodes of two ¼ wavelength resonators, a converting section which has a plurality of strip lines, and a connecting section which connects the filter section and the converting section, wherein the filter section, the converting section, and the connecting section are formed in a dielectric substrate. The filter section is formed at an upper portion in the stacking direction of dielectric layers. The converting section is formed at a lower portion in the stacking direction. The connecting section is formed between the filter section and the converting section.
Description
This application claims the benefit of Japanese Application 2001-201419, filed Jul. 2, 2001, and Japanese Application 2002-057107, filed Mar. 4, 2002, the entireties of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a stacked dielectric filter which constitutes a resonance circuit in a microwave band of several hundreds MHz to several GHz. In particular, the present invention relates to a stacked dielectric filter which makes it possible to effectively miniaturize communications equipment and electronics equipment.
2. Description of the Related Art
In recent years, there has been a strong demand to realize a small-sized and thin high frequency filter to be used for wireless communication equipment. Therefore, it is indispensable to use a stacked dielectric filter.
In general, as shown in
FIG. 30
, such a stacked dielectric filter, for example, a stacked dielectric filter
400
using a ¼ wavelength resonator has a plurality of resonant electrodes
402
,
404
, inner layer ground electrodes
406
,
408
,
410
,
412
, and a coupling-adjusting electrode
414
. Each of the plurality of resonant electrodes
402
,
404
has an end electrically connected to a ground electrode. Each of the inner layer ground electrodes
406
,
408
,
410
,
412
has an end electrically connected to the ground electrode. The inner layer ground electrodes
406
,
410
are stacked to sandwich a part of an open end of the resonant electrode
402
and a dielectric layer. The inner layer ground electrodes
408
,
412
are stacked to sandwich a part of an open end of the resonant electrode
404
and the dielectric layer. The coupling-adjusting electrode
414
electromagnetically couples the respective resonant electrodes
402
,
404
.
However, in the stacked dielectric filter
400
as shown in
FIG. 30
, the ground electric potential is used as the reference electric potential for inputting/outputting a signal of an unbalanced form. Therefore, for example, in order to connect the stacked dielectric filter
400
to a high frequency amplifying circuit of the balanced input type, it is necessary to use a balun (balanced-unbalanced converter) additionally between them. Consequently, a certain limit arises in the miniaturization.
In the above example, the stacked dielectric filter using the ¼ wavelength resonator is described. Additionally, stacked dielectric filters of the balanced type using ½ wavelength resonators have been also suggested (see, for example, Japanese Laid-Open Patent Publication 11-317603, 2000-353904, and 2000-22404).
In each of the stacked dielectric filters of the balanced type, the resonator length is inevitably increased, because the stacked dielectric filter is composed of the ½ wavelength resonator. Therefore, such a stacked dielectric filter is disadvantageous to realize a small sized filter.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a stacked dielectric filter of a small size which enables a balanced input/output for connection to a high frequency amplifying circuit or the like.
Another object of the present invention is to provide a stacked dielectric filter in which it is unnecessary to separately insert any circuit for connecting a DC power source to an IC when the IC is connected to an unbalanced-balanced converting section, while reducing the number of parts, suppressing the insertion loss, and miniaturizing the size of electronic devices including the IC.
Still another object of the present invention is to provide a stacked dielectric filter in which it is unnecessary to separately insert any circuit for matching the impedance between an unbalanced-balanced converting section and an IC when the IC is connected to the unbalanced-balanced converting section, and it is possible to reduce the number of parts, while suppressing the insertion loss, and miniaturizing the size of the electronic devices including the IC.
Still another object of the present invention is to provide a stacked dielectric filter which enables an increased degree of flexibility of design.
Still another object of the present invention is to provide a stacked dielectric filter in which it is possible to reduce the electrode area in a filter section, and it is possible to suppress the stray coupling in an unbalanced-balanced converting section.
The present invention provides a stacked dielectric filter comprising a filter section having a plurality of resonators for filtering an unbalanced signal, and at least one unbalanced-balanced converting section having strip lines. The filter section and the unbalanced-balanced converting sections are in a dielectric substrate including a plurality of stacked dielectric layers.
Accordingly, the filter section can be composed of the ¼ wavelength resonator by which it is advantageous to realize the miniaturization. It is possible to realize compact or small sized devices as compared with stacked dielectric filters of the balanced type composed of ½ wavelength resonators.
Further, it is unnecessary to set the characteristic impedance between the filter section and the unbalanced-balanced converting section to have a specified value (for example, 50Ω). The characteristic impedance can be arbitrarily determined. Therefore, it is possible to enhance the degree of flexibility of design. Further, the filter section can be easily formed, and it is possible to widen the line width of the strip line of the balun section, because the characteristic impedance can be determined to be low. Therefore, it is possible to reduce the loss in the unbalanced-balanced converting section.
As described above, the present invention provides the stacked dielectric filter of the small size which enables the balanced input/output for connection to the high frequency amplifying circuit or the like.
In the stacked dielectric filter, the plurality of dielectric layers of different materials may be laminated or stacked to provide the dielectric substrate. Preferably, a dielectric constant of the dielectric layer corresponding to the filter section is higher than a dielectric constant of the dielectric layer corresponding tothe unbalanced-balanced converting section.
Accordingly, it is possible to reduce the electrode area in the filter section, and it is possible to suppress the stray coupling in the unbalanced-balanced converting section.
The stacked dielectric filter may be exemplarily constructed as follows. For example, the filter section is formed at an upper portion or a lower portion in a stacking direction of the plurality of dielectric layers of the dielectric substrate, and the unbalanced-balanced converting section is formed at a portion other than the upper portion and the lower portion. In this arrangement, an inner layer ground electrode for isolating the filter section from the unbalanced-balanced converting section can be easily formed between the filter section and the unbalanced-balanced converting section. Thus, it is possible to improve the characteristics.
Alternatively, the filter section may be formed at a left portion or a right portion in a stacking direction of the plurality of dielectric layers of the dielectric substrate, and the unbalanced-balanced converting section may be formed at a portion other than the left portion and the right portion.
Further, ground electrodes may be formed on both principal surfaces of the dielectric substrate, and planes on which resonant electrodes of the plurality of resonators are formed and planes on which the ground electrodes are formed may be parallel to one another. Planes on which input/output terminals of the filter section are formed and planes on which the strip lines of the unbalanced-balanced converting section are formed may be perpendicular to one another.
Alternatively, ground electrodes may be formed on both principal surfaces of the dielectric substrate, and planes on which resonant electrodes of the plurality of resonators are formed and planes on which the ground electrodes are formed may be perpendicular to one another. In this arrangement, planes on which input/output terminals of the filter section are formed and planes on which the strip lines of the unbalanced-balanced converting section are formed may be parallel to one another. The input/output terminals of the filter section and the strip lines can be arranged away from each other. Therefore, it is possible to eliminate any unnecessary interference between the input/output terminals of the filter section and the strip lines of the unbalanced-balanced converting section. Thus, it is possible to improve the characteristics.
Further, the unbalanced-balanced converting section may be connected via a connecting section to an input side and/or an output side of the filter section. In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to a ground electrode, wherein the connecting section is formed separately from the unbalanced-balanced converting section with the inner layer ground electrode interposed therebetween, and the connecting section is electrically connected to an unbalanced input/output section of the unbalanced-balanced converting section. It is preferable that the inner layer ground electrode is formed for at least isolating the filter section from the unbalanced-balanced converting section.
It is preferable that the connecting section has a connecting electrode which is connected to the filter section via a capacitor. If the filter section is directly connected to the unbalanced-balanced converting section, then unnecessary matching issues are caused between the filter section and the unbalanced-balanced converting section in the attenuation region of the bandpass characteristics, and an unnecessary peak is formed in the attenuation region. Accordingly, when the filter section is connected to the unbalanced-balanced converting section via the capacitor as in the present invention, then the phase of the unbalanced-balanced converting section is shifted by the capacitor, and it is possible to suppress the unnecessary matching with respect to the filter section. If the connecting electrode is arranged on the side of the unbalanced-balanced converting section, the connecting electrode may be coupled to the unbalanced-balanced converting section, and the bandpass characteristics may be deteriorated. Therefore, it is preferable that the connecting electrode is arranged on the side of the filter section.
On the other hand, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on the line; and a third strip line which is formed on the first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the ground electrode at an arbitrary position on the line.
In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to the ground electrode, wherein second ends of the second and third strip lines are connected to the inner layer ground electrode through via-holes.
Alternatively, when a DC electrode, which is connected to a DC power source, is formed on a surface of the dielectric substrate, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line; and a third strip line which is formed on the first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line.
In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to a ground electrode, wherein the second and third strip lines are connected to the DC electrode at respective arbitrary positions on the second and third strip lines through viaholes respectively beyond the inner layer ground electrode. Alternatively, the stacked dielectric filter may further comprise an inner layer DC electrode which is provided in the dielectric substrate and which is connected to the DC electrode, wherein the second and third strip lines are connected to the inner layer DC electrode at respective arbitrary positions on the second and third strip lines through the via-holes respectively.
Explanation will now be made for an exemplary form of use of the stacked dielectric filter. When the stacked dielectric filter is used, an IC is connected to the stacked dielectric filter in many cases. In such cases, the DC voltage is separately supplied to the IC in some types.
Usually, it is necessary to provide a dedicated circuit for supplying the DC voltage between the stacked dielectric filter and the IC. However, in the present invention, the balanced signal, in which the received signal component is superimposed on the DC voltage, is outputted. Therefore, it is unnecessary to connect the dedicated circuit. Accordingly, it is possible to miniaturize the circuit system including the stacked dielectric filter and the IC.
It is preferable that the second and third strip lines are arranged in linear symmetry about a center of a line by which a line segment for connecting the plurality of balanced input/output terminals is equally divided into two, and respective physical lengths of the second and third strip lines are substantially identical with each other. Accordingly, it is possible to obtain the good balance for the input/output characteristics of the respective balanced input/output terminals.
In the present invention, a width of a first portion of the first strip line corresponding to the second strip line, a length of the first portion, a width of a second portion of the first strip line corresponding to the third strip line, a length of the second portion, a width of the second strip line, an electrically effective length of the second strip line, a width of the third strip line, an electrically effective length of the third strip line, and a dielectric constant of the dielectric layer disposed between the first strip line and the second and third strip lines are appropriately changed. By doing so, it is possible to easily establish an output impedance, level balance, and phase balance of the unbalanced-balanced converting section.
Usually, the output impedance of the unbalanced-balanced converting section is twice the input impedance of the unbalanced-balanced converting section. For example, when the input impedance of the unbalanced-balanced converting section is 50Ω, the output impedance is 100Ω. However, for example, when the impedance, which is required to effect the matching to the IC to be connected to the unbalanced-balanced converting section, is 50Ω, then the impedance matching is not satisfied, and an additional circuit is required to effect the impedance matching.
However, in the present invention, even when the input impedance of the unbalanced-balanced converting section is 50Ω, the output impedance of the unbalanced-balanced converting section can be easily matched to the input impedance of the IC by appropriately setting the various parameters described above.
Alternatively, the input impedance of the unbalanced-balanced converting section may have a value other than 50Ω. For example, when the input impedance is 25Ω, the output impedance of the unbalanced-balanced converting section can be 50Ω. In the above example, it is possible to satisfy the impedance matching with respect to the IC without separately inserting any impedance-matching circuit, helping the size of the circuit system including the stacked dielectric filter and the IC to be reduced.
Alternatively, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on the line; a third strip line which is formed on a first principal surface of the dielectric layer and which has a first end connected to a second end of the first strip line; and a fourth strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the ground electrode at an arbitrary position on the line.
In this arrangement, planes on which input/output terminals of the filter section are formed and respective planes on which the first to fourth strip lines of the unbalanced-balanced converting section are formed can be parallel to one another. Accordingly, the input/output terminals of the filter section and the strip lines are arranged away from each other. Therefore, it is possible to eliminate any unnecessary interference between the input/output terminals of the filter section and the strip lines of the unbalanced-balanced converting section. Thus, it is possible to improve the characteristics.
The stacked dielectric filter may further comprise an inner layer ground electrode connected to the ground electrode, the inner layer ground electrode being formed between the dielectric layer on which the second strip line is formed and the dielectric layer on which the third strip line is formed, wherein the second strip line is connected to the inner layer ground electrode at an arbitrary position on the second strip line. In this arrangement, one coupling line based on the first strip line and the second strip line is separated from the other coupling line based on the third strip line and the fourth strip line by the second inner layer ground electrode. Therefore, it is possible to suppress any interference between the coupling lines, and it is possible to obtain the good balance of the input/output characteristics of the unbalanced-balanced converting section.
When a DC electrode, which is connected to a DC power source, is formed on a surface of the dielectric substrate, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line; a third strip line which is formed on a first principal surface of the dielectric layer and which has a first end connected to a second end of the first strip line; and a fourth strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line.
In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to a ground electrode, wherein the second and fourth strip lines are connected to the DC electrode at respective arbitrary positions on the second and fourth strip lines through via-holes respectively beyond the inner layer ground electrode. Alternatively, the stacked dielectric filter may further comprise an inner layer DC electrode which is provided in the dielectric substrate and which is connected to the DC electrode, wherein the second and fourth strip lines are connected to the inner layer DC electrode at respective arbitrary positions on the second and fourth strip lines through the via-holes respectively.
Further, in the present invention, a width of the first strip line, a length of the first strip line, a width of the second strip line, an electrically effective length of the second strip line, a width of the third strip line, a length of the third strip line, a width of the fourth strip line, an electrically effective length of the fourth strip line, and a dielectric constant or dielectric constants of one or more of the dielectric layers disposed in a region ranging from the first strip line to the fourth strip line are appropriately determined. Accordingly, it is possible to easily determine an output impedance, level balance, and phase balance of the unbalanced-balanced converting section.
In this arrangement, an input impedance of the unbalanced-balanced converting section may have a value other than 50Ω.
In the present invention, a coupling-adjusting electrode for adjusting a coupling degree for the plurality of resonators is formed at a position separated from the connecting section with the resonators interposed therebetween. In this arrangement, if the coupling-adjusting electrode is formed near the connecting section, any stray coupling may be generated between the coupling-adjusting electrode and the connecting section (or the connecting electrode when the connecting section has the connecting electrode connected to the filter section via the capacitor), and it is impossible to eliminate the unnecessary matching. For this reason, it is preferable that the coupling-adjusting electrode is formed at the position separated from the connecting section with the resonators interposed therebetween.
When the resonators are composed of a plurality of resonant electrodes arranged in a stacking direction, the coupling-adjusting electrode may be formed on a first principal surface of one dielectric layer of one or more of the dielectric layers arranged between the resonant electrodes.
In the present invention, the plurality of resonators of the filter section may have different resonance frequencies respectively, and an apparent reactance element may be equivalently connected to an output side of the unbalanced-balanced balanced converting section. Accordingly, when an IC is connected to the unbalanced-balanced converting section, the impedance matching between the unbalanced-balanced converting section and the IC can be realized without inserting any additional matching circuit. Thus, the size of the circuit system including the stacked dielectric filter and the IC can be compact.
As described above, the stacked dielectric filter according to the present invention provides the following effects.
(1) It is possible to effectively realize the miniaturization while realizing the balanced input/output taking the connection of the high frequency amplifying circuit or the like into consideration.
(2) When the IC is connected to the unbalanced-balanced converting section, it is unnecessary to separately insert the circuit for connecting the DC power source to the IC. It is possible to reduce the number of parts, suppress the insertion loss, and miniaturize the size of the electronic devices including the IC.
(3) When the IC is connected to the unbalanced-balanced converting section, it is unnecessary to insert the circuit for matching the impedance between the unbalanced-balanced converting section and IC. It is possible to reduce the number of parts, suppress the insertion loss, and miniaturize the size of the electronic devices including the IC.
(4) It is possible to increase the degree of flexibility of the design.
(5) It is possible to reduce the electrode area in the filter section, and it is possible to suppress the stray coupling in the unbalanced-balanced converting section.
The above and other objects, features, and advantages of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings in which a preferred embodiment of the present invention is shown by way of illustrative example.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
shows a perspective view illustrating a stacked dielectric filter according to a first embodiment;
FIG. 2
shows an exploded perspective view illustrating the stacked dielectric filter according to the first embodiment;
FIG. 3
shows the bandpass characteristics and the reflection characteristics of Comparative Example and Working Example;
FIG. 4
shows an equivalent circuit of a converting section of the stacked dielectric filter according to the first embodiment;
FIG. 5A
illustrates an example in which the width of a first portion is narrowed in a first strip line;
FIG. 5B
illustrates an example in which the width of a second strip line of second and third strip lines is narrowed;
FIG. 6
illustrates the relationship of respective dielectric constants of stacked dielectric layers in the converting section;
FIG. 7
shows a circuit diagram illustrating a form of use adopted when an IC is connected to an unbalanced-balanced converting element;
FIG. 8
shows a circuit diagram illustrating a form of use adopted when an IC is connected to the stacked dielectric filter according to the first embodiment;
FIG. 9
shows a circuit diagram illustrating an example in which an apparent reactance circuit is equivalently connected to the output side of the converting section;
FIG. 10
shows a circuit diagram illustrating another example in which an apparent reactance circuit is equivalently connected to the output side of the converting section;
FIG. 11
shows a circuit diagram illustrating an example of the method for adjusting the input impedance of the converting section;
FIG. 12
shows a circuit diagram illustrating another example of the method for adjusting the input impedance of the converting section;
FIG. 13
shows an equivalent circuit of a converting section of a modified embodiment of the stacked dielectric filter according to the first embodiment;
FIG. 14
shows a perspective view illustrating the modified embodiment of the stacked dielectric filter according to the first embodiment;
FIG. 15
shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the first embodiment;
FIG. 16
illustrates a general form of use of the stacked dielectric filter;
FIG. 17
shows a perspective view illustrating a stacked dielectric filter according to a second embodiment;
FIG. 18
shows an exploded perspective view illustrating the stacked dielectric filter according to the second embodiment;
FIG. 19
illustrates the relationship of respective dielectric constants of stacked dielectric layers in a converting section;
FIG. 20
shows a perspective view illustrating a modified embodiment of the stacked dielectric filter according to the second embodiment;
FIG. 21
shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the second embodiment;
FIG. 22
shows a perspective view illustrating a stacked dielectric filter according to a third embodiment;
FIG. 23
shows an exploded perspective view illustrating the stacked dielectric filter according to the third embodiment;
FIG. 24
shows a perspective view illustrating a modified embodiment of the stacked dielectric filter according to the third embodiment;
FIG. 25
shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the third embodiment;
FIG. 26
shows a perspective view illustrating a stacked dielectric filter according to a fourth embodiment;
FIG. 27
shows an exploded perspective view illustrating the stacked dielectric filter according to the fourth embodiment;
FIG. 28
shows a perspective view illustrating a modified embodiment of the stacked dielectric filter according to the fourth embodiment;
FIG. 29
shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the fourth embodiment; and
FIG. 30
shows an exploded perspective view illustrating a conventional stacked dielectric filter.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Several illustrative embodiments of a dielectric filter of a stacked type according to the present invention will be explained below with reference to
FIGS. 1
to
29
. In the following embodiments, explanation will be made principally for a case in which an input side is of an unbalanced type and an output side is of a balanced type. The present invention is also applicable to a case reverse to the above, as well as to the case in which both the input side and output side are balanced.
As shown in
FIG. 1
, a stacked dielectric filter
10
A according to a first embodiment has a dielectric substrate
14
. The dielectric substrate
14
comprises a plurality of dielectric layers (S
1
to S
10
, see
FIG. 2
) which are stacked, sintered, and integrated into one unit. Ground electrodes
12
a
,
12
b
are formed on both principal surfaces (first principal surface of the first dielectric layer S
1
and first principal surface of the tenth dielectric layer S
10
) of the dielectric substrate
14
.
As shown in
FIG. 2
, a filter section
20
, an unbalanced-balanced converting section (converting section
28
), and a connecting section
30
are provided in the dielectric substrate
14
. The filter section
20
has first and second input side resonant electrodes
16
a
,
16
b
(¼ wavelength input side resonator) and first and second output side resonant electrodes
18
a
,
18
b
(¼ wavelength output side resonator). The converting section
28
has a plurality of strip lines
22
,
24
,
26
. The connecting section
30
connects the filter section
20
and the converting section
28
. In this embodiment, one input side resonator is constructed by the first and second input side resonant electrodes
16
a
,
16
b
which are aligned in the stacking direction, and one output side resonator is constructed by the first and second output side resonant electrodes
18
a
,
18
b
which are aligned in the stacking direction.
As shown in
FIG. 2
, the dielectric substrate
14
comprises the first dielectric layer S
1
to the tenth dielectric layer S
10
which are piled up in this order from the top. Each of the first to tenth dielectric layers S
1
to S
10
has one layer or a plurality of layers.
The filter section
20
and the converting section
28
are formed in regions which are separated vertically in the stacking direction of the dielectric layers S
1
to S
10
in the dielectric substrate
14
respectively. For example, as viewed in
FIG. 2
, the filter section
20
is formed at an upper portion in the stacking direction, the converting section
28
is formed at a lower portion in the stacking direction, and the connecting section
30
is formed between the filter section
20
and the converting section
28
.
In other words, the filter section
20
is formed in the region ranging from the second dielectric layer S
2
to the fifth dielectric layer S
5
, the converting section
28
is formed in the region including the eighth and ninth dielectric layers S
8
, S
9
, and the connecting section
30
is formed in the region including the fifth and sixth dielectric layers S
5
, S
6
. Further, an inner layer ground electrode
32
, which is provided in order to isolate the filter section
20
from the converting section
28
, is formed in the dielectric substrate
14
.
The first and second input side resonant electrodes
16
a
,
16
b
and the first and second output side resonant electrodes
18
a
,
18
b
constitute the two ¼ resonators respectively. Therefore, for example, as shown in
FIG. 1
, the short circuit end of each of the resonant electrodes
16
a
,
16
b
,
18
a
,
18
b
is connected to a ground electrode
12
c
which is formed on a first side surface
14
a
of the dielectric substrate
14
.
In the filter
10
A, as shown in
FIG. 1
, an unbalanced input terminal
34
is formed at a central portion of a second side surface
14
b
of the outer circumferential surface of the dielectric substrate
14
, and ground electrodes
12
d
are formed on both sides of the unbalanced input terminal
34
. First and second balanced output terminals
36
a
,
36
b
are formed on a third side surface
14
c
which is disposed on the side opposite to the second side surface
14
b
. There are areas for insulating the unbalanced input terminal
34
and the balanced output terminals
36
a
,
36
b
from the ground electrodes (including the inner layer ground electrode).
As shown in
FIG. 2
, the first input side resonant electrode
16
a
and the first output side resonant electrode
18
a
are formed on the first principal surface of the third dielectric layer S
3
. A first lead electrode
38
is formed between a position in the vicinity of the open end of the first input side resonant electrode
16
a
and the unbalanced input terminal
34
(see FIG.
1
).
The second input side resonant electrode
16
b
and the second output side resonant electrode
18
b
are formed on the first principal surface of the fourth dielectric layer S
4
. A second lead electrode
41
is formed between a position in the vicinity of the open end of the second input side resonant electrode
16
b
and the unbalanced input terminal
34
.
First and second inner layer ground electrodes
40
,
42
and a coupling-adjusting electrode
44
are formed on the first principal surface of the second dielectric layer S
2
. Both first ends of the inner layer ground electrodes
40
,
42
are connected to the ground electrode
12
e
. The ground electrode
12
e
is formed on the fourth side surface
14
d
of the dielectric substrate
14
(see FIG.
1
). The second dielectric layer S
2
is interposed between the inner layer ground electrode
40
and the open end of the first input side resonant electrode
16
a
and between the inner layer ground electrode
42
and the open end of the first output side resonant electrode
18
a
. The coupling-adjusting electrode
44
is an electrode for adjusting the coupling degree for the input side resonator and the output side resonator.
Third and fourth inner layer ground electrodes
46
,
48
and an output capacitor electrode
50
are formed on the first principal surface of the fifth dielectric layer S
5
. Both first ends of the third and fourth inner layer ground electrodes
46
,
48
are connected to the ground electrode
12
e
. The fourth dielectric layer S
4
is interposed between the inner layer ground electrode
46
and the open end of the second input side resonant electrode
16
b
, between the inner layer ground electrode
48
and the open end of the second output side resonant electrode
18
b
, and between the output capacitor electrode
50
and the second output side resonant electrode
18
b
. The output capacitor electrode
50
is electrically connected to a connecting electrode
54
through a via-hole
52
which is provided for the fifth dielectric layer S
5
.
The connecting electrode
54
, which is provided in order to connect the output side of the filter section
20
and the input side of the converting section
28
, is formed on the first principal surface of the sixth dielectric layer S
6
. The first end of the connecting electrode
54
is connected to the via-hole
52
described above. The fourth and fifth dielectric layers S
4
, S
5
are interposed between the second end of the connecting electrode
54
and the second input side resonant electrode
16
b
. The second end of the connecting electrode
54
is connected to a via-hole
56
which is communicated with the converting section
28
. The connecting section
30
is constructed by the output capacitor electrode
50
, the via-hole
52
, and the connecting electrode
54
.
The inner layer ground electrode
32
is formed on the first principal surface of the seventh dielectric layer S
7
. There is an area for insulating the inner layer ground electrode
32
from the via-hole
56
, i.e., the area on which no electrode film is formed.
The first strip line
22
of the converting section
28
is formed on the first principal surface of the eighth dielectric layer S
8
. The first strip line
22
is patterned in a spiral form from a start end
60
(first start end
60
). The first strip line
22
is configured to be converged in a spiral form toward a terminal end
62
arranged at a position in linear symmetry to the first start end
60
(position in linear symmetry about a line m by which a line segment for connecting the first and second balanced output terminals
36
a
,
36
b
is equally divided into two). The second end of the connecting electrode
54
described above is electrically connected through the via-hole
56
at the first start end
60
or at a position in the vicinity of the first start end
60
of the first strip line
22
. In the following description, the position of connection with respect to the via-hole
56
on the first strip line
22
is referred to as “first connection position
61
”.
The second and third strip lines
24
,
26
in the converting section
28
are formed on the first principal surface of the ninth dielectric layer S
9
. The second strip line
24
is configured to be patterned in a spiral form from a start end (second start end
64
) corresponding to the first start end
60
of the first strip line
22
described above toward the first balanced output terminal
36
a
. The third strip line
26
is configured to be patterned in a spiral form from a start end (third start end
66
) corresponding to the terminal end
62
of the first strip line
22
described above toward the second balanced output terminal
36
b.
It is preferable that the spiral shapes of the second and third strip lines
24
,
26
are mutually in linear symmetry (linear symmetry about the line m). Physical lengths of the second and third strip lines
24
,
26
are substantially identical with each other.
The second strip line
24
is electrically connected to the ground electrode
12
b
through the via-hole
68
at the second start end
64
or at a position in the vicinity of the second start end
64
(second connection portion
65
). The third strip line
26
is electrically connected to the ground electrode
12
b
through the via-hole
70
at the third start end
66
or at a position in the vicinity of the third start end
66
(third connection portion
67
).
In other words, in the filter
10
A, the planes, on which the respective resonant electrodes
16
a
,
16
b
,
18
a
,
18
b
of the input side resonator and the output side resonator are formed, are parallel to the planes on which the ground electrodes
12
a
,
12
b
are formed. Further, in the filter
10
A, the plane (second side surface
14
b
), on which the unbalanced input terminal
34
of the filter section
20
is formed, is perpendicular to the planes on which the respective strip lines
22
,
24
,
26
in the converting section
28
are formed.
Further, in the filter
10
A, the first to tenth dielectric layers S
1
to S
10
of arbitrarily established different materials are used as the plurality of dielectric layers of the dielectric substrate
14
, and the dielectric layers are stacked, sintered, and integrated into one unit.
It is preferable that dielectric layers having high dielectric constants (for example, ∈=25) are used as the dielectric layers (first to sixth dielectric layers S
1
to S
6
) of the portion for forming the capacitor in the filter section
20
. The dielectric layers having low dielectric constants (for example, ∈=7) are used as the dielectric layers (seventh to tenth dielectric layers S
7
to S
10
) for the converting section
28
.
As described above, in the filter
10
A, the filter section
20
of the unbalanced input system and the converting section
28
having the first to third strip lines
22
,
24
,
26
are integrated into one unit in the dielectric substrate
14
. Therefore, the filter
10
A can be constructed with the ¼ wavelength resonator which is advantageous to realize the small size as the filter section
20
. It is possible to miniaturize the filter as compared with a stacked dielectric filter of the balanced type of the ½ wavelength resonator.
When the components are integrated into one unit, it is unnecessary for the characteristic impedance between the filter section
20
and the converting section
28
to have a specified value (for example, 50Ω). It is possible to arbitrarily determine the characteristic impedance between the filter section
20
and the converting section
28
. Therefore, it is possible to flexibly design filters. Further, the filter section
20
can be easily formed, and the line widths of the strip lines
22
,
24
,
26
in the converting section
28
can be widened, because the characteristic impedance between both can be low. Therefore, the loss in the converting section
28
can be also reduced.
It is preferable in the filter
10
A, that the dielectric layer of the portion for forming the capacitor in the filter section
20
is made of material different from the material of the dielectric layer for the converting section
28
. The dielectric constant of the dielectric layer of the portion for forming the capacitor in the filter section
20
should be higher than the dielectric constant of the dielectric layer for the converting section
28
. Therefore, it is possible to reduce the electrode area in the filter section
20
. Further, it is possible to suppress the stray coupling in the converting section
28
.
The filter section
20
is formed at the upper portion in the stacking direction of the dielectric layers of the dielectric substrate
14
, and the converting section
28
is formed at the lower portion in the stacking direction. Therefore, the inner layer ground electrode
32
, which is provided in order to isolate the filter section
20
from the converting section
28
, can be easily formed between the filter section
20
and the converting section
28
. Thus, it is possible to improve the characteristics. The mounting area is also reduced by arranging the filter section
20
and the converting section
28
at the upper and lower portions of the dielectric substrate
14
respectively.
When the tap structure, in which the second output side resonant electrode
18
b
is directly connected to the converting section
28
, is adopted, then the filter section
20
and the converting section
28
may cause unnecessary matching issues in an attenuation region of the bandpass characteristic, and an unnecessary peak may be formed in the attenuation region. However, in the filter
10
A, the filter section
20
is connected to the converting section
28
via the capacitor by the output capacitor electrode
50
with respect to the second output side resonant electrode
18
b
. Therefore, it is possible to shift the phase of the converting section
28
with the capacitor, and it is possible to suppress the unnecessary matching issues with respect to the filter section
20
. Further, the connecting electrode
54
is formed on the side of the filter section
20
(at the position close to the filter section
20
as compared with the inner layer ground electrode
32
). Therefore, no unnecessary peak is generated in the bandpass characteristic.
The second and third strip lines
24
,
26
are in linear symmetry about the line m by which the line segment for connecting the first and second balanced output terminals
36
a
,
36
b
is equally divided into two. Therefore, it is possible to obtain the good balance for the output characteristics of the respective balanced output terminals
36
a
,
36
b.
In the filter
10
A, a relief
80
in a spiral shape is formed in each of the first to third strip lines
22
,
24
,
26
in the converting section
28
so that the interference with the unbalanced input terminal
34
is suppressed. In the filter
10
A, each of the first to third strip lines
22
,
24
,
26
is partially bent so that a certain distance is maintained from the unbalanced input terminal
34
.
An exemplary experiment will now be described. In this exemplary experiment, the bandpass characteristic and the reflection characteristic were investigated for a Comparative Example and a Working Example.
The Comparative Example was a stacked dielectric filter of the unbalanced type. Specifically, the stacked dielectric filter of the unbalanced type was constructed in the same manner as the filter
400
shown in FIG.
30
. The Working Example was constructed in the same manner as the filter
10
A described above.
Experimental results are shown in FIG.
3
. In
FIG. 3
, Solid Line A indicates the bandpass characteristic of the Comparative Example, and Broken Line B indicates the bandpass characteristic of the Working Example. Solid Line C indicates the reflection characteristic of the Comparative Example, and Broken Line D indicates the reflection characteristic of the Working Example. The characteristics of the Comparative Example were illustrative of the results obtained by performing the measurement without using a balun.
According to the experimental results, it is understandable that the attenuation pole is located at the position close to the band of use, signals in regions other than the bandpass region can be efficiently attenuated, and the reflection is reduced in the Working Example as compared with the Comparative Example. It is clear that the characteristics are further deteriorated when the balun is separately connected to the filter of the Comparative Example. On the contrary, it is understandable that the characteristics are remarkably improved in the Working Example as compared with the Comparative Example, because it is unnecessary to separately connect the balun in the Working Example.
Next, explanation will be made with reference to an equivalent circuit shown in
FIG. 4
for the adjustment of the output impedance, the level balance, and the phase balance of the converting section
28
of the filter
10
A.
The equivalent circuit shown in
FIG. 4
is illustrative of the converting section
28
of the filter
10
A. As for the first strip line
22
, the portion (first portion
22
a
) corresponding to the second strip line
24
and the portion (second portion
22
b
) corresponding to the third strip line
26
are connected in series. The first end (terminal end
62
) of the second portion
22
b
is the open end.
The second strip line
24
is connected between GND and the first balanced output terminal
36
a
, and the third strip line
26
is connected between GND and the second balanced output terminal
36
b.
The level balance herein refers to whether an identical signal level (absolute value) is outputted from the first and second balanced output terminals
36
a
,
36
b
. The phase balance herein refers to whether phases of signals outputted from the first and second balanced output terminals
36
a
,
36
b
are related by 180°.
At first, the level balance can be adjusted by appropriately changing the widths W
3
, W
4
of the second and third strip lines
24
,
26
. For example, it is assumed that the first signal level outputted from the first balanced output terminal
36
a
is lower than the second signal level outputted from the second balanced output terminal
36
b
. When the width W
3
of the second strip line
24
is widened, or when the width W
4
of the third strip line
26
is narrowed, then the first signal level is raised, or the second signal level is lowered. Accordingly, it is possible to adjust the level balance.
As for this feature, the level balance can be also adjusted by appropriately changing the width W
1
of the first portion
22
a
of the first strip line
22
or the width W
2
of the second portion
22
b
.
FIGS. 5A and 5B
are illustrative of the case in which the width W
1
of the first portion
22
a
of the first strip line
22
and the width W
3
of the second strip line
24
are narrowed.
When the level balance is adjusted, the phase difference between the first and second signal levels may be deviated from 180°. Accordingly, the phase balance can be adjusted by appropriately changing any one or more electrically effective length or lengths of the electrically effective length L
1
of the first portion
22
a
of the first strip line
22
, the electrically effective length L
2
of the second portion
22
b
, the electrically effective length L
3
of the second strip line
24
, and the electrically effective length L
4
of the third strip line
26
.
When the electrically effective length L
1
of the first portion
22
a
is changed, the first connection position
61
on the first strip line
22
may be appropriately changed. When the electrically effective length L
2
of the second portion
22
b
is changed, the position of the terminal end
62
may be changed. When the electrically effective length L
3
of the second strip line
24
is changed, the connection portion
65
on the second strip line
24
may be appropriately changed. When the electrically effective length L
4
of the third strip line
26
is changed, the third connection portion
67
on the third strip line
26
may be appropriately changed.
On the other hand, the output impedance of the converting section
28
can be also easily adjusted by appropriately changing the widths W
1
, W
2
and the electrically effective lengths L
1
, L
2
of the first and second portions
22
a
,
22
b
of the first strip line
22
described above, the width W
3
and the electrically effective length L
3
of the second strip line
24
, and the width W
4
and the electrically effective length L
4
of the third strip line
26
. However, the output impedance of the converting section
28
can be easily adjusted as well by changing the dielectric constant of the eighth dielectric layer S
8
existing between the first strip line
22
and the second and third strip lines
24
,
26
.
For example, as shown in
FIG. 6
, it is assumed that ∈
1
represents the dielectric constant of the eighth dielectric layer S
8
, and ∈
2
represents the respective dielectric constants of the seventh dielectric layer S
7
and the ninth dielectric layer S
9
. When ∈
1
<∈
2
is established, the output impedance of the converting section
28
is raised. When ∈
1
>∈
2
is established, the output impedance is lowered.
Usually, as shown in
FIG. 7
, the output impedance of the unbalanced-balanced converting element
200
is twice the input impedance of the unbalanced-balanced converting element
200
. For example, when the input impedance of the unbalanced-balanced converting element
200
is 50Ω, the output impedance is 100Ω. However, assuming that an IC
202
is connected to the unbalanced-balanced converting element
200
, when the impedance necessary to effect the matching to the IC
202
is, for example, 50Ω, the impedance matching is not satisfied. It is necessary to additionally provide a circuit
204
for effecting the impedance matching between the unbalanced-balanced converting element
200
and the IC
202
.
However, in the case of the filter
10
A, even when the input impedance of the converting section
28
is 50Ω as described above, the output impedance of the converting section
28
can be easily matched to the input impedance of the IC
202
by appropriately setting the various parameters described above. As shown in
FIG. 8
, it is unnecessary to connect any additional matching circuit, and it is possible to directly connect the IC
202
to the output terminal of the converting section
28
. This results in the miniaturization of the circuit system including the filter
10
A and the IC.
The technique for adjusting the output impedance of the converting section
28
includes the setting of the various parameters as described above, and a method for equivalently connecting an apparent reactance circuit
206
(see
FIGS. 9 and 10
) to the output side of the converting section
28
. This method can be realized by allowing the plurality of resonators of the filter section
20
to have different resonance frequencies. For example, as shown in
FIG. 9
, the physical length of the output side resonant electrode
18
is shorter than the physical length of the input side resonant electrode
16
. Further, for example, as shown in
FIG. 10
, the area of the open end of the input side resonant electrode
16
is larger than the area of the open end of the output side resonant electrode
18
.
Accordingly, for example, when the filter section
20
is a single unit, the filter section
20
operates as if the reactance circuit is connected for making the resonance frequencies of the resonators equivalent. However, in the first embodiment, the filter section
20
and the converting section
28
are integrated into one unit. Therefore, the reactance circuit
206
operates as if the reactance circuit
206
is connected to the output terminal of the converting section
28
. The reactance circuit
206
contributes to the adjustment of the output impedance of the converting section
28
.
In the filter
10
A, the filter section
20
and the converting section
28
are integrated into one unit as described above. Therefore, it is unnecessary to set a specified value (for example, 50Ω) for the characteristic impedance between the filter section
20
and the converting section
28
. In other words, it is possible to set a value other than 50Ω for the input impedance of the converting section
28
. For example, as shown in
FIG. 11
, the input impedance of the converting section
28
can be adjusted to have an arbitrary value by appropriately changing the capacitance value of the capacitor C
1
formed between the output side resonant electrode
18
(or second output side resonant electrode
18
b
in
FIG. 2
) of the filter section
20
and the output capacitor electrode
50
of the connecting section
30
.
When the output side resonant electrode
18
(
18
b
) of the filter section
20
is directly connected through the via-hole
52
to the connecting electrode
54
of the connecting section
30
as shown in
FIG. 2
, the input impedance of the converting section
28
can be adjusted to have an arbitrary value by appropriately changing the connection position of the via-hole
52
with respect to the output side resonant electrode
18
as shown in FIG.
12
.
Next, a modified embodiment of the filter
10
A will be explained with reference to
FIGS. 13
to
16
.
A filter
10
A
a
is constructed in approximately the same manner as the filter
10
A described above. However, as illustrated in an equivalent circuit shown in
FIG. 13
, the former is different from the latter in that a DC power source is connected to the second and third strip lines
24
,
26
in the converting section
28
.
Specifically, as shown in
FIG. 14
, a DC electrode
210
, which is connected to the DC power source, is formed at a portion of the third side surface
14
c
of the dielectric substrate
14
between the first and second balanced output terminals
36
a
,
36
b.
Further, as shown in
FIG. 15
, an inner layer DC electrode
212
, which is connected to the DC electrode
210
, is formed on a first principal surface of an eleventh dielectric layer S
11
positioned under the tenth dielectric layer S
10
. The second connection portion
65
of the second strip line
24
and the third connection portion
67
of the third strip line
26
are connected to the inner layer DC electrode
212
through the via-holes
68
,
70
respectively. In this arrangement, areas
214
,
216
for insulating the via-holes
68
,
70
from the ground electrode
12
b
are formed on the first principal surface of the tenth dielectric layer S
10
.
Accordingly, as shown in
FIG. 13
, the DC power source is connected at the second and third connection portions
65
,
67
of the second and third strip lines
24
,
26
respectively. Further, capacitors C
2
, C
3
are formed between the second and third strip lines
24
,
26
and the ground electrode
12
b
(GND).
Explanation will now be made for use of the stacked dielectric filter. In general, when the stacked dielectric filter is used, for example, as shown in
FIG. 16
, the unbalanced-balanced converting element
222
is connected to the stacked dielectric filter
220
, and the IC
202
is further connected to the unbalanced-balanced converting element
222
. In this case, a DC voltage is separately supplied to the IC
202
.
Usually, as shown in
FIG. 16
, it is necessary to provide a dedicated circuit
224
for supplying the DC voltage between the stacked dielectric filter
220
and the IC
202
. However, it is unnecessary to connect the dedicated circuit
224
with the present invention, because the balanced signal, in which the received signal component is superimposed on the DC voltage, is outputted from the converting section
28
of the filter
10
A
a
shown in
FIGS. 13
to
15
described above. Therefore, it is possible to realize the miniaturization of the circuit system including the filter
10
A
a
and the IC
202
.
Next, a stacked dielectric filter
10
B according to a second embodiment will be explained with reference to
FIGS. 17 and 18
.
As shown in
FIG. 17
, the filter
10
B has a dielectric substrate
14
. The dielectric substrate
14
is constructed by stacking, sintering, and integrating a plurality of dielectric layers (S
1
to S
12
, see
FIG. 18
) into one unit. Ground electrodes
12
a
,
12
b
are formed on both principal surfaces of the dielectric substrate
14
(first principal surface of the first dielectric layer S
1
and first principal surface of the twelfth dielectric layer S
12
) respectively.
As shown in
FIG. 18
, a filter section
20
is formed at a left portion of the dielectric substrate
14
in the stacking direction of the dielectric layers S
1
to S
12
, a converting section
28
is formed at a right portion in the stacking direction, and a connecting section
30
is formed at a lower portion in the stacking direction.
As shown in
FIG. 17
, an unbalanced input terminal
34
is formed at a central portion of a fourth side surface
14
d
of the outer circumferential surface of the dielectric substrate
14
, and ground electrodes
12
e
are formed on both sides of the unbalanced input terminal
34
. First and second balanced output terminals
36
a
,
36
b
are formed on a first side surface
14
a
disposed on the side opposite to the fourth side surface
14
d
. Ground electrodes
12
d
,
12
f
are formed on second and third side surfaces
14
b
,
14
c
respectively. There are areas for insulating the unbalanced input terminal
34
and the balanced output terminals
36
a
,
36
b
from the ground electrodes (including inner layer ground electrodes described later on).
As shown in
FIG. 18
, the filter section
20
has an input side resonant electrode
16
(¼ wavelength input side resonator) which is formed on the first principal surface of the fourth dielectric layer S
4
, and an output side resonant electrode
18
(¼ wavelength output side resonator) which is formed on the first principal surface of the eighth dielectric layer S
8
. Each of the resonant electrodes
16
,
18
has an L-shaped configuration in which the pattern is bent at an intermediate position. Respective short circuit ends are connected to the ground electrode
12
e
on the fourth side surface
14
d
(see FIG.
17
), and respective open ends are formed to be wider than intermediate portions.
An input electrode
90
, which has a first end connected to the unbalanced input terminal
34
, is formed on the first principal surface of the second dielectric layer S
2
. The input electrode
90
is electrically connected to the input side resonant electrode
16
through a via-hole
92
which is formed between the second and third dielectric layers S
2
, S
3
.
An inner layer ground electrode
94
is formed on the first principal surface of the third dielectric layer S
3
. The inner layer ground electrode
94
has a first end which is connected to the ground electrode
12
e
. The third dielectric layer S
3
is interposed between the inner layer ground electrode
94
and the open end of the input side resonant electrode
16
.
A first electrode
44
a
of a coupling-adjusting electrode
44
and an inner layer ground electrode
96
are formed on the first principal surface of the fifth dielectric layer S
5
. The fourth dielectric layer S
4
is interposed between the first electrode
44
a
and the input side resonant electrode
16
. The inner layer ground electrode
96
has a first end which is connected to the ground electrode
12
e
. The fourth dielectric layer S
4
is interposed between the inner layer ground electrode
96
and the open end of the input side resonant electrode
16
.
A second electrode
44
b
of the coupling-adjusting electrode
44
and an inner layer ground electrode
98
are formed on the first principal surface of the seventh dielectric layer S
7
. The seventh dielectric layer S
7
is interposed between the second electrode
44
b
and the output side resonant electrode
18
. The inner layer ground electrode
98
has a first end which is connected to the ground electrode
12
e
. The seventh dielectric layer S
7
is interposed between the inner layer ground electrode
98
and the open end of the output side resonant electrode
18
.
An inner layer ground electrode
100
is formed on the first principal surface of the ninth dielectric layer
90
. The inner layer ground electrode
100
has a first end which is connected to the ground electrode
12
e
. The eighth dielectric layer S
8
is interposed between the inner layer ground electrode
100
and the open end of the output side resonant electrode
18
.
The coupling-adjusting electrode
44
is constructed by the first electrode
44
a
, the second electrode
44
b
, and the via-hole
44
c
. The via-hole
44
c
is formed in a region ranging over the fifth and sixth dielectric layers S
5
, S
6
, and the via-hole
44
c
electrically connects the first and second electrodes
44
a
,
44
b.
Additionally, the converting section
28
has inner layer ground electrodes
102
,
104
,
106
, and first to fourth strip lines
22
,
24
,
26
,
108
. The inner layer ground electrode
102
is formed on the first principal surface of the third dielectric layer S
3
, the inner layer ground electrode
104
is formed on the first principal surface of the seventh dielectric layer S
7
, and the inner layer ground electrode
106
is formed on the first principal surface of the tenth dielectric layer S
10
. The first strip line
22
is formed on the first principal surface of the ninth dielectric layer S
9
, the second strip line
24
is formed on the first principal surface of the eighth dielectric layer S
8
, the third strip line
26
is formed on the first principal surface of the sixth dielectric layer S
6
, and the fourth strip line
108
is formed on the first principal surface of the fifth dielectric layer S
5
.
The first strip line
22
is configured to be patterned in a spiral form from a first start end
60
to a terminal end
62
(position disposed closely to the first side surface
14
a
of the dielectric substrate
14
). A second end of the connecting electrode
54
described above is electrically connected through a via-hole
120
at the first start end
60
or at a position in the vicinity of the first start end
60
(first connection position
61
) of the first strip line
22
.
The second strip line
24
is configured to be patterned in a spiral form toward the first balanced output terminal
36
a
from a second start end
64
formed at a position corresponding to the first start end
60
of the first strip line
22
. The inner layer ground electrode
104
is electrically connected through a via-hole
110
at the second start end
64
or at a position in the vicinity of the second start end
64
(second connection portion
65
) of the second strip line
22
.
The third strip line
26
is configured to be converged in a spiral form to a terminal end
112
from a third start end
66
corresponding to the terminal end
62
of the first strip line
22
described above. The terminal end
62
of the first strip line
22
and the third start end
66
of the third strip line
26
are electrically connected to one another through a via-hole
114
formed in a region ranging over the sixth to eighth dielectric layers S
6
to S
8
.
The fourth strip line
108
is configured to be patterned in a spiral form toward the second balanced output terminal
36
b
from a fourth start end
118
formed at a position corresponding to the terminal end
112
of the third strip line
26
. The fourth strip line
108
is electrically connected to the inner layer ground electrode
102
through a via-hole
116
at the fourth start end
118
or at a position in the vicinity of the fourth start end
118
(third connection position
119
) of the fourth strip line
108
.
In other words, in the converting section
28
, one coupling line of the first strip line
22
and the second strip line
24
is separated by the inner layer ground electrode
104
from the other coupling line of the third strip line
26
and the fourth strip line
108
.
The connecting section
30
has an output capacitor electrode
50
and the connecting electrode
54
. The output capacitor electrode
50
is formed at a position opposed to a central portion of the output side resonant electrode
18
on the first principal surface of the tenth dielectric layer S
10
. The connecting electrode
54
is formed on the first principal surface of the eleventh dielectric layer S
11
. A first end of the connecting electrode
54
is connected to the output capacitor electrode
50
through a via-hole
52
. A second end of the connecting electrode
54
is connected to the first connection position
61
of the first strip line
22
through a via-hole
120
. There is an area for insulating the via-hole
120
from the inner layer ground electrode
106
, i.e., an area in which no electrode film is formed.
In the filter
10
B, it is possible to effectively realize the miniaturization, and it is possible to increase the degree of flexibility of designing of each of the components in the same manner as in the filter
10
A.
In the converting section
28
; the one coupling line of the first and second strip lines
22
,
24
is separated by the inner layer ground electrode
104
from the other coupling line of the third and fourth strip lines
26
,
108
. Therefore, unnecessary coupling is not formed between the filter section
20
and the converting section
28
, even though the filter section
20
is not isolated from the converting section
28
. Consequently, it is possible to suppress the interference between the coupling lines, and it is possible to obtain the good balance of the input/output characteristics in the converting section
28
.
Also in the filter
10
B, the planes, on which the respective resonant electrodes
16
,
18
of the input side resonator and the output side resonator are formed, are parallel to the planes on which the ground electrodes
12
a
,
12
b
, are formed in the same manner as in the filter
10
A. The plane, on which the unbalanced input terminal
34
of the filter section
20
is formed, is perpendicular to the planes on which the respective strip lines
22
,
24
,
26
,
108
of the converting section
28
are formed. The unbalanced input terminal
34
is formed at the position separated from the respective strip lines
22
,
24
,
26
,
108
. Accordingly, it is possible to eliminate any unnecessary interference between the unbalanced input terminal
34
and the respective strip lines
22
,
24
,
26
,
108
. It is therefore unnecessary to provide any relief
80
as shown in
FIG. 2
for the respective strip lines
22
,
24
,
26
,
108
. This results in the improvement in characteristics.
Also in the filter
10
B, the output impedance, the level balance, and the phase balance of the converting section
28
can be adjusted by appropriately changing the widths and the electrically effective lengths of the first to fourth strip lines
22
,
24
,
26
,
108
and the dielectric constants of the third to ninth dielectric layers S
3
to S
9
.
When the electrically effective length of the first strip line
22
requires change, that change can be easily realized by appropriately changing the first connection position
61
on the first strip line
22
. When the electrically effective length of the second strip line
24
requires change, that change can be easily realized by appropriately changing the second connection portion
65
.
When the electrically effective length of the third strip line
26
requires change, that change can be easily realized by changing the position of the terminal end
112
of the third strip line
26
. When the electrically effective length of the fourth strip line
108
requires change, that change can be easily realized by appropriately changing the third connection position
119
on the fourth strip line
108
.
For example, as shown in
FIG. 19
, it is assumed that ∈
1
represents the dielectric constants of the fifth and eighth dielectric layers S
5
, S
8
, and ∈
2
represents the respective dielectric constants of the third, fourth, sixth, seventh, and ninth dielectric layers S
3
, S
4
, S
6
, S
7
, S
9
. When ∈
1
<∈
2
is established, the output impedance of the converting section
28
is raised. When ∈
1
>∈
2
is established, the output impedance is lowered.
Also in the filter
10
B, an arrangement can be adopted, in which an apparent reactance circuit is equivalently connected to the output terminal of the converting section
28
. Accordingly, the output impedance of the converting section
28
can be appropriately changed. Further, the input impedance of the converting section
28
can be adjusted to have an arbitrary value.
Next, a modified embodiment of the filter
10
B will be explained with reference to
FIGS. 20 and 21
.
A filter
10
B
a
is constructed in approximately the same manner as the filter
10
B described above. However, the former is different from the latter in the following points.
That is, as shown in
FIG. 20
, a DC electrode
210
, which is connected to a DC power source, is formed between the first and second balanced output terminals
36
a
,
36
b
on the first side surface
14
a
of the dielectric substrate
14
.
Further, as shown in
FIG. 21
, a twentieth dielectric layer S
20
is stacked between the sixth dielectric layer S
6
and the seventh dielectric layer S
7
. A twenty-first dielectric layer S
21
is stacked between the second dielectric layer S
2
and the third dielectric layer S
3
. A first inner layer DC electrode
230
is formed on a first principal surface of the twentieth dielectric layer S
20
. The first inner layer DC electrode
230
is connected to the DC electrode
210
. A second inner layer DC electrode
232
is formed on a first principal surface of the twenty-first dielectric layer S
21
. The first and second inner layer DC electrodes
230
,
232
are connected to the DC electrode
210
.
The second connection portion
65
of the second strip line
24
is connected to the first inner layer DC electrode
230
through the via-hole
110
. The third connection position
119
of the fourth strip line
108
is connected to the second inner layer DC electrode
232
through the via-hole
116
. In this arrangement, areas
234
,
236
for insulating the via-holes
110
,
116
from the inner layer ground electrodes
104
,
102
are formed on the respective first principal surfaces of the seventh dielectric layer S
7
and the third dielectric layer S
3
.
In the filter
10
B
a
, when an IC of the type of the separate supply of the DC voltage is connected to the filter
10
B
a
, the balanced signal, in which the received signal component is superimposed on the DC voltage, is outputted from the converting section
28
. Therefore, it is unnecessary to connect any dedicated circuit for supplying the DC voltage to the IC
202
. As a result, it is possible to realize the miniaturization of the circuit system including the filter
10
B
a
and the IC
202
.
Next, a stacked dielectric filter
10
C according to a third embodiment will be explained with reference to
FIGS. 22 and 23
.
As shown in
FIG. 22
, the filter
10
C has a dielectric substrate
14
. The dielectric substrate
14
is constructed by stacking, sintering, and integrating a plurality of dielectric layers (S
1
to S
15
, see
FIG. 23
) into one unit. Ground electrodes
12
a
,
12
b
are formed on both principal surfaces of the dielectric substrate
14
respectively. It is preferable that in the filter
10
C, respective first principal surfaces of the first to fifteenth dielectric layers S
1
to S
15
are perpendicular to the planes on which the ground electrodes
12
a
,
12
b
are formed.
As shown in
FIG. 23
, a filter section
20
is formed at a former half portion in the stacking direction of the dielectric layers S
1
to S
15
of the dielectric substrate
14
, a converting section
28
is formed at a latter half portion in the stacking direction, and a connecting section
30
is formed at a central portion in the stacking direction.
As shown in
FIG. 22
, an unbalanced input terminal
34
is formed at a central portion of a second side surface
14
b
of the outer circumferential surface of the dielectric substrate
14
. A first balanced output terminal
36
a
is formed on a fourth side surface
14
d
. A second balanced output terminal
36
b
is formed on a first side surface
14
a
. Further, there are areas for insulating the unbalanced input terminal
34
and the respective balanced output terminals
36
a
,
36
b
from the ground electrodes (including inner layer ground electrodes).
As shown in
FIG. 23
, the filter section
20
has an input side resonant electrode
16
(¼ wavelength input side resonator) and an output side resonant electrode
18
(¼ wavelength output side resonator). The input side resonant electrode
16
is formed on the first principal surface of the fourth dielectric layer S
4
. The output side resonant electrode
18
is formed on the first principal surface of the seventh dielectric layer S
7
. Open ends of the resonant electrodes
16
,
18
are formed to be wider than intermediate portions. Respective short circuit end portions of the resonant electrodes
16
,
18
are configured to be branched into two so that they are connected to the upper and lower ground electrodes
12
a
,
12
b
(see FIG.
22
).
An input electrode
90
is formed on the first principal surface of the second dielectric layer S
2
. The input electrode
90
is electrically connected to the unbalanced input terminal
34
through a via-hole
130
which is formed for the first dielectric layer S
1
. The input electrode
90
is electrically connected to the input side resonant electrode
16
through a via-hole
92
which is formed in a region ranging over the second and third dielectric layers S
2
, S
3
. The input electrode
90
is an electrode for adjusting the impedance. In this embodiment, the adjustment is made to 50Ω.
An inner layer ground electrode
94
is formed on the first principal surface of the third dielectric layer S
3
. Both ends of the inner-layer ground electrode
94
are connected to the ground electrodes
12
a
,
12
b
respectively. The third dielectric layer S
3
is interposed between the inner layer ground electrode
94
and the open end of the input side resonant electrode
16
.
A first electrode
44
a
of a coupling-adjusting electrode
44
and an inner layer ground electrode
96
are formed on the first principal surface of the fifth dielectric layer S
5
. The fourth dielectric layer S
4
is interposed between the first electrode
44
a
and the input side resonant electrode
16
. Both ends of the inner layer ground electrode
96
are connected to the ground electrodes
12
a
,
12
b
respectively. The fourth dielectric layer S
4
is interposed between the inner layer ground electrode
96
and the open end of the input side resonant electrode
16
.
A second electrode
44
b
of the coupling-adjusting electrode
44
and an inner layer ground electrode
98
are formed on the first principal surface of the sixth dielectric layer S
6
. The sixth dielectric layer S
6
is interposed between the second electrode
44
b
and the output side resonant electrode
18
. Both ends of the inner layer ground electrode
98
are connected to the ground electrodes
12
a
,
12
b
respectively. The sixth dielectric layer S
6
is interposed between the inner layer ground electrode
98
and the open end of the output side resonant electrode
18
.
The coupling-adjusting electrode
44
is constructed by the first electrode
44
a
, the second electrode
44
b
, and a via-hole
44
c
. The via-hole
44
c
is formed for the fifth dielectric layer S
5
, and it electrically connects the first and second electrodes
44
a
,
44
b.
An inner layer ground electrode
100
and an L-shaped connecting electrode
54
are formed on the first principal surface of the eighth dielectric layer S
8
. Both ends of the inner layer ground electrode
100
are connected to the ground electrodes
12
a
,
12
b
respectively. The seventh dielectric layer S
7
is interposed between the inner layer ground electrode
100
and the open end of the output side resonant electrode
18
. The connecting electrode
54
is formed at a position opposed to the central portion of the output side resonant electrode
18
on the first principal surface of the eighth dielectric layer S
8
. The seventh dielectric layer S
7
is interposed between the connecting electrode
54
and the output side resonant electrode
18
. The connecting electrode
54
has a first end which is connected to the converting section
28
. The connecting electrode
54
also functions as an output capacitor electrode
50
. The connecting section
30
is constructed by the connecting electrode
54
.
An inner layer ground electrode
32
, which is connected to the ground electrodes
12
a
,
12
b
respectively and which is provided in order to isolate the filter section
20
from the converting section
28
, is formed on the first principal surface of the ninth dielectric layer S
9
.
Additionally, the converting section
28
has inner layer ground electrodes
104
,
132
and first to fourth strip lines
22
,
24
,
26
,
108
. The inner layer ground electrode
104
is formed on the first principal surface of the twelfth dielectric layer S
12
, and the inner layer ground electrode
132
is formed on the first principal surface of the fifteenth dielectric layer S
15
. The first strip line
22
is formed on the first principal surface of the tenth dielectric layer S
10
, the second strip line
24
is formed on the first principal surface of the eleventh dielectric layer S
11
, the third strip line
26
is formed on the first principal surface of the thirteenth dielectric layer S
13
, and the fourth strip line
108
is formed on the first principal surface of the fourteenth dielectric layer S
14
.
The first strip line
22
, which is formed on the first principal surface of the tenth dielectric layer S
10
, is configured to be converged in a spiral form from a first start end
60
formed at a position close to the lower surface of the dielectric substrate
14
to a terminal end
62
(approximately central portion of the tenth dielectric layer S
10
). A second end of the connecting electrode
54
described above is electrically connected through a via-hole
120
at the first start end
60
or at a position in the vicinity of the first start end
60
on the first strip line
22
(first connection position
61
).
The second strip line
24
is configured to be patterned in a spiral form toward the first balanced output terminal
36
a
from a second start end
64
formed at an approximately central portion of the eleventh dielectric layer S
11
. The inner layer ground electrode
104
is electrically connected through a via-hole
110
at the second start end
64
or at a position in the vicinity of the second start end
64
on the second strip line
22
(second connection portion
65
).
The third strip line
26
is configured to be patterned in a spiral form from a third start end
66
corresponding to the terminal end of the first strip line
22
described above toward a terminal end
112
(formed at a position close to the lower surface of the dielectric substrate
14
). The first start end
62
and the third start end
66
are electrically connected to one another through a via-hole
114
formed in a region ranging over the tenth to twelfth dielectric layers S
10
to S
12
. There is an area for insulating the via-hole
114
from the inner layer ground electrode
104
, i.e., an area in which no electrode film is formed on the first principal surface of the twelfth dielectric layer S
12
.
The fourth strip line
108
is configured to be patterned in a spiral form from a fourth start end
118
formed at an approximately central portion of the fourteenth dielectric layer S
14
toward the second balanced output terminal
36
b
. The fourth strip line
108
is electrically connected to the inner layer ground electrode
132
through a via-hole
116
at the fourth start end
118
or at a position in the vicinity of the fourth start end
118
(third connection position
119
) on the fourth strip line
108
.
In other words, the converting section
28
is the same as the converting section
28
of the stacked dielectric filter
10
B according to the second embodiment described above. That is, one coupling line of the first and second strip lines
22
,
24
is separated by the inner layer ground electrode
104
from the other coupling line of the third and fourth strip lines
26
,
108
.
Also in the third embodiment, in the same manner as in the first embodiment, the first to fifteenth dielectric layers S
1
to S
15
of different materials are used as the plurality of dielectric layers of the dielectric substrate
14
. The dielectric layers S
1
to S
15
are stacked, sintered, and integrated into one unit.
It is preferable that the dielectric layers having high dielectric constants (for example, ∈=25) are used as the dielectric layers (first to eighth dielectric layers S
1
to S
8
) of the portion for forming the capacitor in the filter section
20
. The dielectric layers having low dielectric constants (for example, ∈=7) are used as the dielectric layers (ninth to fifteenth dielectric layers S
9
to S
15
) for the converting section
28
.
As for the filter
10
C, in the same manner as in the filter
10
A, it is possible to effectively realize the miniaturization, and it is possible to increase the degree of flexibility of designing of each of the components. Further, the filter section
20
is isolated from the converting section
28
by the inner layer ground electrode
32
. Therefore, it is possible to effectively avoid any unnecessary coupling between the filter section
20
and the converting section
28
.
In the converting section
28
, the one coupling line of the first and second strip lines
22
,
24
is separated by the inner layer ground electrode
104
from the other coupling line of the third and fourth strip lines
26
,
108
. Therefore, it is possible to suppress the interference between the coupling lines, and it is possible to obtain the good balance of the output characteristics of the converting section
28
.
Further, in the filter
10
C, the planes, on which the respective resonant electrodes
16
,
18
of the input side resonator and the output side resonator are formed, are perpendicular to the planes on which the ground electrodes
12
a
,
12
b
are formed. Further, the plane, on which the unbalanced input terminal
34
of the filter section
20
is formed, is parallel to the planes on which the respective strip lines
22
,
24
,
26
,
108
of the converting section
28
are formed. Therefore, the unbalanced input terminal
34
and the respective strip lines
22
,
24
,
26
,
108
can be separated from each other. It is possible to eliminate any unnecessary interference between the unbalanced input terminal
34
and the respective strip lines
22
,
24
,
26
,
108
.
The dielectric constants of the dielectric layers of the portion for forming the capacitor in the filter section
20
are higher than the dielectric constants of the dielectric layers of the converting section
28
. Therefore, it is possible to reduce the electrode area in the filter section
20
. Further, it is possible to suppress the stray coupling in the converting section
28
.
Also in the filter
10
C, the output impedance of the converting section
28
, the level balance, and the phase balance can be adjusted by appropriately changing the widths and the electrically effective lengths of the first to fourth strip lines
22
,
24
,
26
,
108
and the dielectric constants of the ninth to fifteenth dielectric layers S
9
to S
15
.
In the filter
10
C, an apparent reactance circuit is equivalently connected to the output terminal of the converting section
28
. No reactance circuit is connected to the output terminal of the converting section
28
. However, the converting section
28
operates as if it is connected to a reactance circuit. The output impedance of the converting section
28
can be appropriately changed. Further, the input impedance of the converting section
28
can be adjusted to have an arbitrary value.
Next, a modified embodiment of the filter
10
C will be explained with reference to
FIGS. 24 and 25
.
A filter
10
C
a
is constructed in approximately the same manner as the filter
10
C described above. However, the former is different from the latter in the following points.
That is, as shown in
FIG. 24
, a DC electrode
210
, which is connected to a DC power source, is formed between first and second balanced output terminals
36
a
,
36
b
on a third side surface
14
c
of a dielectric substrate
14
.
Further, as shown in
FIG. 25
, an inner layer DC electrode
240
is formed on a first principal surface of a sixteenth dielectric layer S
16
. The inner layer DC electrode
240
is connected to the DC electrode
210
. The second connection portion
65
of the second strip line
24
is connected through the via-hole
110
to the inner layer DC electrode
240
. The third connection position
119
of the fourth strip line
108
is connected to the inner layer DC electrode
240
through the via-hole
116
. In this arrangement, an area
242
for insulating the via-hole
110
from the inner layer ground electrode
104
formed on the first principal surface of the twelfth dielectric layer S
12
. Further, an area
244
for insulating the via-hole
116
from the inner layer ground electrode
132
is formed on the first principal surface of the fifteenth dielectric layer S
15
.
Also in the filter
10
C
a
, when an IC
202
which requires a DC voltage is connected to the filter
10
C
a
, it is unnecessary to connect any dedicated circuit for supplying the DC voltage to the IC
202
. As a result, it is possible to realize the miniaturization of the circuit system including the stacked dielectric filter and the IC.
Next, a stacked dielectric filter
10
D according to a fourth embodiment will be explained with reference to
FIGS. 26 and 27
.
The filter
10
D is based on the balanced input system and the balanced output system unlike the filters
10
A to
10
C described above.
As shown in
FIG. 26
, the filter
10
D has a dielectric substrate
14
. The dielectric substrate
14
is constructed by stacking, sintering, and integrating a plurality of dielectric layers (S
1
to S
15
, see
FIG. 27
) into one unit. Ground electrodes
12
a
,
12
b
are formed on both principal surfaces (first principal surface of the first dielectric layer S
1
and first principal surface of the fifteenth dielectric layer S
15
) of the dielectric substrate
14
respectively.
As shown in
FIG. 27
, an input side converting section
28
A is formed at an upper portion in the stacking direction of the dielectric layers S
1
to S
15
of the dielectric substrate
14
, an output side converting section
28
B is formed at a lower portion in the stacking direction, and a filter section
20
is formed at a central portion in the stacking direction. An input side connecting section
30
A is formed between the input side converting section
28
A and the filter section
20
. An output side connecting section
30
B is formed between the output side converting section
28
B and the filter section
20
. In other words, the filter
10
D is constructed such that the input side converting section
28
A and the output side connecting section
30
A are added to the filter
10
A.
Therefore, the constitutive members, which correspond to those of the filter
10
A, are designated by the same reference numerals, duplicate explanation of which will be omitted. As for the respective constitutive members of the input side converting section
28
A, the output side converting section
28
B, the input side connecting section
30
A, and the output side connecting section
30
B, reference numerals for those on the input side are affixed with A, and reference numerals for those on the output side are affixed with B. Duplicate explanation will be omitted for the converting sections
28
A,
28
B and the connecting sections
30
A,
30
B.
In the filter
10
D, the input side converting section
28
A is arranged over the filter section
20
. For this reason, a coupling-adjusting electrode
44
is formed on the first principal surface of the eighth dielectric layer S
8
. A first input side resonant electrode
16
a
and a first output side resonant electrode
18
a
are formed on the first principal surface of the seventh dielectric layer S
7
. A second input side resonant electrode
16
b
and a second output side resonant electrode
18
b
are formed on the first principal surface of the ninth dielectric layer S
9
.
A via-hole
150
for electrically connecting the respective open ends is formed between the first and second input side resonant electrodes
16
a
,
16
b
. A via-hole
152
for electrically connecting the respective open ends is formed between the first and second output side resonant electrodes
18
a
,
18
b.
As shown in
FIG. 26
, a ground electrode
12
d
is formed at a central portion of the second side surface
14
b
of the outer circumferential surface of the dielectric substrate
14
. First and second balanced input terminals
34
a
,
34
b
are formed on both sides of the ground electrode
12
d
. A ground electrode
12
f
is formed at a central portion of the third side surface
14
c
. First and second balanced output terminals
36
a
,
36
b
are formed on both sides of the ground electrode
12
f
. Ground electrodes
12
c
,
12
e
are formed on the first and fourth side surfaces
14
a
,
14
d
respectively. There are areas for insulating the balanced input terminals
34
a
,
34
b
and the balanced output terminals
36
a
,
36
b
from the ground electrodes (including inner layer ground electrodes) respectively.
When the filter
10
D is employed, it is possible to easily manufacture a stacked dielectric filter of the balanced input/output system using the ¼ wavelength resonator. Further, it is also possible to realize the miniaturization of the stacked dielectric filter.
Also in the filter
10
D, the output impedance of the output side converting section
28
B, the level balance, and the phase balance can be adjusted by appropriately changing the respective widths and the electrically effective lengths of the first portion
22
B
a
and the second portion
22
B
b
of the first strip line
22
B, the second strip line
24
B, and the third strip line
26
B of the output side converting section
28
B, and the dielectric constants of the twelfth to fourteenth dielectric layers S
12
to S
14
.
Also in the filter
10
D, an apparent reactance circuit may be equivalently connected to the output terminal of the output side converting section
28
B. It is possible to appropriately change the output impedance of the output side converting section
28
B. Further, the input impedance of the output side converting section
28
B can be adjusted to have an arbitrary value.
Next, a modified embodiment of the filter
10
D will be explained with reference to
FIGS. 28 and 29
.
A filter
10
D
a
is constructed in approximately the same manner as the filter
10
D described above. However, the former is different from the latter in the following points. That is, as shown in
FIG. 28
, a DC electrode
210
, which is connected to a DC power source, is formed between first and second balanced output terminals
36
a
,
36
b
on a third side surface
14
c
of a dielectric substrate
14
.
Further, as shown in
FIG. 29
, an inner layer DC electrode
250
, which is connected to the DC electrode
210
, is formed on a first principal surface of a sixteenth dielectric layer S
16
. The second connection portion
65
B of the second strip line
24
B is connected to the inner layer DC electrode
250
through the via-hole
68
B. The third connection portion
67
B of the third strip line
26
B is connected to the inner layer DC electrode
250
through the via-hole
70
B. In this arrangement, areas
252
and
254
for insulating the via-holes
68
B,
70
B from the ground electrode
12
b
are formed on the first principal surface of the tenth dielectric layer S
10
.
As for the filter
10
D
a
, when an IC
202
which requires the DC voltage is connected to the filter
10
D
a
, it is unnecessary to connect any dedicated circuit for supplying the DC voltage to the IC
202
. As a result, it is possible to realize the miniaturization of the circuit system including the stacked dielectric filter
10
D
a
and the IC
202
.
It is a matter of course that the stacked dielectric filter according to the present invention is not limited to the embodiments described above. Various modifications can be made without deviating from the scope of the present invention.
Claims
- 1. A stacked dielectric filter comprising a filter section having a plurality of resonators for filtering an unbalanced signal, and at least one unbalanced-balanced converting section having strip lines, said filter section and said unbalanced-balanced converting section being in a dielectric substrate including a plurality of stacked dielectric layers, wherein said unbalanced-balanced converting section is connected via a connecting section to an input side and/or an output side of said filter section.
- 2. The stacked dielectric filter according to claim 1, wherein said dielectric substrate includes said plurality of stacked dielectric layers made of different materials.
- 3. The stacked dielectric filter according to claim 2, wherein a dielectric constant of said dielectric layer corresponding to said filter section is higher than a dielectric constant of said dielectric layer corresponding to said unbalanced-balanced converting section.
- 4. The stacked dielectric filter according to claim 1, wherein said filter section is formed at an upper portion or a lower portion in a stacking direction of said plurality of dielectric layers of said dielectric substrate, and said unbalanced-balanced converting section is formed at a portion other than said upper portion and said lower portion.
- 5. The stacked dielectric filter according to claim 4, whereinground electrodes are formed on both principal surfaces of said dielectric substrate; and planes on which resonant electrodes of said plurality of resonators are formed and planes on which said ground electrodes are formed are parallel to one another.
- 6. The stacked dielectric filter according to claim 5, wherein planes on which input/output terminals of said filter section are formed and planes on which said strip lines of said unbalanced-balanced converting section are formed are perpendicular to one another.
- 7. The stacked dielectric filter according to claim 4, whereinground electrodes are formed on both principal surfaces of said dielectric substrate; and planes on which resonant electrodes of said plurality of resonators are formed and planes on which said ground electrodes are formed are perpendicular to one another.
- 8. The stacked dielectric filter according to claim 4, wherein planes on which input/output terminals of said filter section are formed and planes on which said strip lines of said unbalanced-balanced converting section are formed are parallel to one another.
- 9. The stacked dielectric filter according to claim 1, wherein said filter section is formed at a left portion or a right portion in a stacking direction of said plurality of dielectric layers of said dielectric substrate, and said unbalanced-balanced converting section is formed at a portion other than said left portion and said right portion.
- 10. The stacked dielectric filter according to claim 9, whereinground electrodes are formed on both principal surfaces of said dielectric substrate; and planes on which resonant electrodes of said plurality of resonators are formed and planes on which said ground electrodes are formed are parallel to one another.
- 11. The stacked dielectric filter according to claim 10, wherein planes on which input/output terminals of said filter section are formed and planes on which said strip lines of said unbalanced-balanced converting section are formed are perpendicular to one another.
- 12. The stacked dielectric filter according to claim 1, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to a ground electrode, wherein said connecting section is formed separately from said unbalanced-balanced converting section with said inner layer ground electrode interposed therebetween, and said connecting section is electrically connected to an unbalanced input/output section of said unbalanced-balanced converting section.
- 13. The stacked dielectric filter according to claim 12, wherein said inner layer ground electrode isolates said filter section from said unbalanced-balanced converting section.
- 14. The stacked dielectric filter according to claim 1, wherein said connecting section has a connecting electrode which is connected to said filter section via a capacitor.
- 15. The stacked dielectric filter according to claim 1, wherein said unbalanced-balanced converting section comprises:a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on said second strip line; and a third strip line which is formed on said first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said ground electrode at an arbitrary position on said third strip line.
- 16. The stacked dielectric filter according to claim 15, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to said ground electrode, wherein second ends of said second and third strip lines are connected to said inner layer ground electrode through via-holes.
- 17. The stacked dielectric filter according to claim 15, wherein said second and third strip lines are arranged in linear symmetry about a line by which a line segment for connecting said plurality of balanced input/output terminals is equally divided into two, and respective physical lengths of said second and third strip lines are substantially identical with each other.
- 18. The stacked dielectric filter according to claim 15, wherein a width of a first portion of said first strip line corresponding to said second strip line, a length of said first portion, a width of a second portion of said first strip line corresponding to said third strip line, a length of said second portion, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, an electrically effective length of said third strip line, and a dielectric coolant of said dielectric layer disposed between said first strip line and said second and third strip lines are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
- 19. The stacked dielectric filter according to claim 18, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
- 20. The stacked dielectric filter according to claim 1, further comprising:a DC electrode which is formed on a surface of said dielectric substrate and which is connected to a DC power source, wherein said unbalanced-balanced converting section comprises: a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said second strip line; and a third strip line which is formed on said first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said third strip line.
- 21. The stacked dielectric filter according to claim 20, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to a ground electrode, wherein said second and third strip lines are connected to said DC electrode at respective arbitrary positions on said second and third strip lines through via-holes respectively beyond said inner layer ground electrode.
- 22. The stacked dielectric filter according to claim 21, further comprising:an inner layer DC electrode which is provided in said dielectric substrate and which is connected to said DC electrode, wherein said second and third strip lines are connected to said inner layer DC electrode at respective arbitrary positions on said second and third strip fines through said via-holes respectively.
- 23. The stacked dielectric filter according to claim 20, wherein said second and third strip lines are arranged in linear symmetry about a center of a line by which a line segment for connecting said plurality of balanced input/output terminals is equally divided into two, and respective physical lengths of said second and third strip lines are substantially identical with each other.
- 24. The stacked dielectric filter according to claim 20, wherein a width of a first portion of said first strip line corresponding to said second strip line, a length of said first portion, a width of a second portion of said first strip line corresponding to said third strip line, a length of said second portion, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, an electrically effective length of said third strip line, and a dielectric constant of said dielectric layer disposed between said first strip line and said second and third strip lines are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
- 25. The stacked dielectric filter according to claim 24, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
- 26. The stacked dielectric filter according to claim 1, wherein said unbalanced-balanced converting section comprises:a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on said second strip line; a third strip line which is formed on a first principal surface of said dielectric layer and which has a first end connected to a second end of said first strip line; and a fourth strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said ground electrode at an arbitrary position on said fourth strip line.
- 27. The stacked dielectric filter according to claim 26, further comprising:an inner layer ground electrode connected to said ground electrode, said inner layer ground electrode being formed between said dielectric layer on which said second strip line is formed and said dielectric layer on which said third strip line is formed, wherein said second strip line is connected to said inner layer ground electrode at an arbitrary position on said second strip line.
- 28. The stacked dielectric filter according to claim 26, wherein a width of said first strip line, a length of said first strip line, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, a length of said third strip line, a width of said fourth strip line, an electrically effective length of said fourth strip line, and a dielectric constant or dielectric constants of one or more of said dielectric layers disposed in a region ranging from said first strip line to said fourth strip line are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
- 29. The stacked dielectric filter according to claim 28, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
- 30. The stacked dielectric filter according to claim 1, further comprising:a DC electrode which is formed on a surface of said dielectric substrate and which is connected to a DC power source, wherein said unbalanced-balanced converting section comprises: a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said second strip line; a third strip line which is formed on a first principal surface of said dielectric layer and which has a first end connected to a second end of said first strip line; and a fourth strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said fourth strip line.
- 31. The stacked dielectric filter according to claim 30, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to a ground electrode, wherein said second and fourth strip lines are connected to said DC electrode at respective arbitrary positions on said second and fourth strip lines through via-holes respectively beyond said inner layer ground electrode.
- 32. The stacked dielectric filter according to claim 31, further comprising:an inner layer DC electrode which is provided in said dielectric substrate and which is connected to said DC electrode, wherein said second and fourth strip lines are connected to said inner layer DC electrode at respective arbitrary positions on said second and fourth strip lines through said via-holes respectively.
- 33. The stacked dielectric filter according to claim 30, wherein a width of said first strip line, a length of said first strip line, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, a length of said third strip line, a width of said fourth strip line, an electrically effective length of said fourth strip line, and a dielectric constant or dielectric constants of one or more of said dielectric layers disposed in a region ranging from said first strip line to said fourth strip line are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
- 34. The stacked dielectric filter according to claim 33, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
- 35. The stacked dielectric filter according to claim 1, wherein a coupling-adjusting electrode for adjusting a coupling degree for said plurality of resonators is formed at a position separated from said connecting section with said resonators interposed therebetween.
- 36. The stacked dielectric filter according to claim 35, wherein said coupling-adjusting electrode is formed on a first principal surface of one dielectric layer of one or more of said dielectric layers arranged between a plurality of resonant electrodes when said resonators include said plurality of resonant electrodes arranged in a stacking direction.
- 37. The stacked dielectric filter according to claim 1, whereinsaid plurality of resonators of said filter section have different resonance frequencies respectively; and an apparent reactance element is equivalently connected to an output side of said unbalanced-balanced converting section.
- 38. The stacked dielectric filter according to claim 1, comprising two unbalanced-balanced converting sections.
- 39. The stacked dielectric filter according to claim 38, wherein one of said unbalanced-balanced converting sections is arranged prior to the input of the filter section and the other one of said unbalanced-balanced converting sections is arranged after the filter section.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2001-201419 |
Jul 2001 |
JP |
|
2002-057107 |
Mar 2002 |
JP |
|
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