Stacked dielectric filter

Information

  • Patent Grant
  • 6828881
  • Patent Number
    6,828,881
  • Date Filed
    Thursday, June 27, 2002
    22 years ago
  • Date Issued
    Tuesday, December 7, 2004
    20 years ago
Abstract
A stacked dielectric filter includes a filter section which has first and second input side resonant electrodes and first and second output side resonant electrodes of two ¼ wavelength resonators, a converting section which has a plurality of strip lines, and a connecting section which connects the filter section and the converting section, wherein the filter section, the converting section, and the connecting section are formed in a dielectric substrate. The filter section is formed at an upper portion in the stacking direction of dielectric layers. The converting section is formed at a lower portion in the stacking direction. The connecting section is formed between the filter section and the converting section.
Description




This application claims the benefit of Japanese Application 2001-201419, filed Jul. 2, 2001, and Japanese Application 2002-057107, filed Mar. 4, 2002, the entireties of which are incorporated herein by reference.




BACKGROUND OF THE INVENTION




1. Field of the Invention




The present invention relates to a stacked dielectric filter which constitutes a resonance circuit in a microwave band of several hundreds MHz to several GHz. In particular, the present invention relates to a stacked dielectric filter which makes it possible to effectively miniaturize communications equipment and electronics equipment.




2. Description of the Related Art




In recent years, there has been a strong demand to realize a small-sized and thin high frequency filter to be used for wireless communication equipment. Therefore, it is indispensable to use a stacked dielectric filter.




In general, as shown in

FIG. 30

, such a stacked dielectric filter, for example, a stacked dielectric filter


400


using a ¼ wavelength resonator has a plurality of resonant electrodes


402


,


404


, inner layer ground electrodes


406


,


408


,


410


,


412


, and a coupling-adjusting electrode


414


. Each of the plurality of resonant electrodes


402


,


404


has an end electrically connected to a ground electrode. Each of the inner layer ground electrodes


406


,


408


,


410


,


412


has an end electrically connected to the ground electrode. The inner layer ground electrodes


406


,


410


are stacked to sandwich a part of an open end of the resonant electrode


402


and a dielectric layer. The inner layer ground electrodes


408


,


412


are stacked to sandwich a part of an open end of the resonant electrode


404


and the dielectric layer. The coupling-adjusting electrode


414


electromagnetically couples the respective resonant electrodes


402


,


404


.




However, in the stacked dielectric filter


400


as shown in

FIG. 30

, the ground electric potential is used as the reference electric potential for inputting/outputting a signal of an unbalanced form. Therefore, for example, in order to connect the stacked dielectric filter


400


to a high frequency amplifying circuit of the balanced input type, it is necessary to use a balun (balanced-unbalanced converter) additionally between them. Consequently, a certain limit arises in the miniaturization.




In the above example, the stacked dielectric filter using the ¼ wavelength resonator is described. Additionally, stacked dielectric filters of the balanced type using ½ wavelength resonators have been also suggested (see, for example, Japanese Laid-Open Patent Publication 11-317603, 2000-353904, and 2000-22404).




In each of the stacked dielectric filters of the balanced type, the resonator length is inevitably increased, because the stacked dielectric filter is composed of the ½ wavelength resonator. Therefore, such a stacked dielectric filter is disadvantageous to realize a small sized filter.




SUMMARY OF THE INVENTION




It is therefore an object of the present invention to provide a stacked dielectric filter of a small size which enables a balanced input/output for connection to a high frequency amplifying circuit or the like.




Another object of the present invention is to provide a stacked dielectric filter in which it is unnecessary to separately insert any circuit for connecting a DC power source to an IC when the IC is connected to an unbalanced-balanced converting section, while reducing the number of parts, suppressing the insertion loss, and miniaturizing the size of electronic devices including the IC.




Still another object of the present invention is to provide a stacked dielectric filter in which it is unnecessary to separately insert any circuit for matching the impedance between an unbalanced-balanced converting section and an IC when the IC is connected to the unbalanced-balanced converting section, and it is possible to reduce the number of parts, while suppressing the insertion loss, and miniaturizing the size of the electronic devices including the IC.




Still another object of the present invention is to provide a stacked dielectric filter which enables an increased degree of flexibility of design.




Still another object of the present invention is to provide a stacked dielectric filter in which it is possible to reduce the electrode area in a filter section, and it is possible to suppress the stray coupling in an unbalanced-balanced converting section.




The present invention provides a stacked dielectric filter comprising a filter section having a plurality of resonators for filtering an unbalanced signal, and at least one unbalanced-balanced converting section having strip lines. The filter section and the unbalanced-balanced converting sections are in a dielectric substrate including a plurality of stacked dielectric layers.




Accordingly, the filter section can be composed of the ¼ wavelength resonator by which it is advantageous to realize the miniaturization. It is possible to realize compact or small sized devices as compared with stacked dielectric filters of the balanced type composed of ½ wavelength resonators.




Further, it is unnecessary to set the characteristic impedance between the filter section and the unbalanced-balanced converting section to have a specified value (for example, 50Ω). The characteristic impedance can be arbitrarily determined. Therefore, it is possible to enhance the degree of flexibility of design. Further, the filter section can be easily formed, and it is possible to widen the line width of the strip line of the balun section, because the characteristic impedance can be determined to be low. Therefore, it is possible to reduce the loss in the unbalanced-balanced converting section.




As described above, the present invention provides the stacked dielectric filter of the small size which enables the balanced input/output for connection to the high frequency amplifying circuit or the like.




In the stacked dielectric filter, the plurality of dielectric layers of different materials may be laminated or stacked to provide the dielectric substrate. Preferably, a dielectric constant of the dielectric layer corresponding to the filter section is higher than a dielectric constant of the dielectric layer corresponding tothe unbalanced-balanced converting section.




Accordingly, it is possible to reduce the electrode area in the filter section, and it is possible to suppress the stray coupling in the unbalanced-balanced converting section.




The stacked dielectric filter may be exemplarily constructed as follows. For example, the filter section is formed at an upper portion or a lower portion in a stacking direction of the plurality of dielectric layers of the dielectric substrate, and the unbalanced-balanced converting section is formed at a portion other than the upper portion and the lower portion. In this arrangement, an inner layer ground electrode for isolating the filter section from the unbalanced-balanced converting section can be easily formed between the filter section and the unbalanced-balanced converting section. Thus, it is possible to improve the characteristics.




Alternatively, the filter section may be formed at a left portion or a right portion in a stacking direction of the plurality of dielectric layers of the dielectric substrate, and the unbalanced-balanced converting section may be formed at a portion other than the left portion and the right portion.




Further, ground electrodes may be formed on both principal surfaces of the dielectric substrate, and planes on which resonant electrodes of the plurality of resonators are formed and planes on which the ground electrodes are formed may be parallel to one another. Planes on which input/output terminals of the filter section are formed and planes on which the strip lines of the unbalanced-balanced converting section are formed may be perpendicular to one another.




Alternatively, ground electrodes may be formed on both principal surfaces of the dielectric substrate, and planes on which resonant electrodes of the plurality of resonators are formed and planes on which the ground electrodes are formed may be perpendicular to one another. In this arrangement, planes on which input/output terminals of the filter section are formed and planes on which the strip lines of the unbalanced-balanced converting section are formed may be parallel to one another. The input/output terminals of the filter section and the strip lines can be arranged away from each other. Therefore, it is possible to eliminate any unnecessary interference between the input/output terminals of the filter section and the strip lines of the unbalanced-balanced converting section. Thus, it is possible to improve the characteristics.




Further, the unbalanced-balanced converting section may be connected via a connecting section to an input side and/or an output side of the filter section. In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to a ground electrode, wherein the connecting section is formed separately from the unbalanced-balanced converting section with the inner layer ground electrode interposed therebetween, and the connecting section is electrically connected to an unbalanced input/output section of the unbalanced-balanced converting section. It is preferable that the inner layer ground electrode is formed for at least isolating the filter section from the unbalanced-balanced converting section.




It is preferable that the connecting section has a connecting electrode which is connected to the filter section via a capacitor. If the filter section is directly connected to the unbalanced-balanced converting section, then unnecessary matching issues are caused between the filter section and the unbalanced-balanced converting section in the attenuation region of the bandpass characteristics, and an unnecessary peak is formed in the attenuation region. Accordingly, when the filter section is connected to the unbalanced-balanced converting section via the capacitor as in the present invention, then the phase of the unbalanced-balanced converting section is shifted by the capacitor, and it is possible to suppress the unnecessary matching with respect to the filter section. If the connecting electrode is arranged on the side of the unbalanced-balanced converting section, the connecting electrode may be coupled to the unbalanced-balanced converting section, and the bandpass characteristics may be deteriorated. Therefore, it is preferable that the connecting electrode is arranged on the side of the filter section.




On the other hand, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on the line; and a third strip line which is formed on the first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the ground electrode at an arbitrary position on the line.




In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to the ground electrode, wherein second ends of the second and third strip lines are connected to the inner layer ground electrode through via-holes.




Alternatively, when a DC electrode, which is connected to a DC power source, is formed on a surface of the dielectric substrate, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line; and a third strip line which is formed on the first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line.




In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to a ground electrode, wherein the second and third strip lines are connected to the DC electrode at respective arbitrary positions on the second and third strip lines through viaholes respectively beyond the inner layer ground electrode. Alternatively, the stacked dielectric filter may further comprise an inner layer DC electrode which is provided in the dielectric substrate and which is connected to the DC electrode, wherein the second and third strip lines are connected to the inner layer DC electrode at respective arbitrary positions on the second and third strip lines through the via-holes respectively.




Explanation will now be made for an exemplary form of use of the stacked dielectric filter. When the stacked dielectric filter is used, an IC is connected to the stacked dielectric filter in many cases. In such cases, the DC voltage is separately supplied to the IC in some types.




Usually, it is necessary to provide a dedicated circuit for supplying the DC voltage between the stacked dielectric filter and the IC. However, in the present invention, the balanced signal, in which the received signal component is superimposed on the DC voltage, is outputted. Therefore, it is unnecessary to connect the dedicated circuit. Accordingly, it is possible to miniaturize the circuit system including the stacked dielectric filter and the IC.




It is preferable that the second and third strip lines are arranged in linear symmetry about a center of a line by which a line segment for connecting the plurality of balanced input/output terminals is equally divided into two, and respective physical lengths of the second and third strip lines are substantially identical with each other. Accordingly, it is possible to obtain the good balance for the input/output characteristics of the respective balanced input/output terminals.




In the present invention, a width of a first portion of the first strip line corresponding to the second strip line, a length of the first portion, a width of a second portion of the first strip line corresponding to the third strip line, a length of the second portion, a width of the second strip line, an electrically effective length of the second strip line, a width of the third strip line, an electrically effective length of the third strip line, and a dielectric constant of the dielectric layer disposed between the first strip line and the second and third strip lines are appropriately changed. By doing so, it is possible to easily establish an output impedance, level balance, and phase balance of the unbalanced-balanced converting section.




Usually, the output impedance of the unbalanced-balanced converting section is twice the input impedance of the unbalanced-balanced converting section. For example, when the input impedance of the unbalanced-balanced converting section is 50Ω, the output impedance is 100Ω. However, for example, when the impedance, which is required to effect the matching to the IC to be connected to the unbalanced-balanced converting section, is 50Ω, then the impedance matching is not satisfied, and an additional circuit is required to effect the impedance matching.




However, in the present invention, even when the input impedance of the unbalanced-balanced converting section is 50Ω, the output impedance of the unbalanced-balanced converting section can be easily matched to the input impedance of the IC by appropriately setting the various parameters described above.




Alternatively, the input impedance of the unbalanced-balanced converting section may have a value other than 50Ω. For example, when the input impedance is 25Ω, the output impedance of the unbalanced-balanced converting section can be 50Ω. In the above example, it is possible to satisfy the impedance matching with respect to the IC without separately inserting any impedance-matching circuit, helping the size of the circuit system including the stacked dielectric filter and the IC to be reduced.




Alternatively, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on the line; a third strip line which is formed on a first principal surface of the dielectric layer and which has a first end connected to a second end of the first strip line; and a fourth strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the ground electrode at an arbitrary position on the line.




In this arrangement, planes on which input/output terminals of the filter section are formed and respective planes on which the first to fourth strip lines of the unbalanced-balanced converting section are formed can be parallel to one another. Accordingly, the input/output terminals of the filter section and the strip lines are arranged away from each other. Therefore, it is possible to eliminate any unnecessary interference between the input/output terminals of the filter section and the strip lines of the unbalanced-balanced converting section. Thus, it is possible to improve the characteristics.




The stacked dielectric filter may further comprise an inner layer ground electrode connected to the ground electrode, the inner layer ground electrode being formed between the dielectric layer on which the second strip line is formed and the dielectric layer on which the third strip line is formed, wherein the second strip line is connected to the inner layer ground electrode at an arbitrary position on the second strip line. In this arrangement, one coupling line based on the first strip line and the second strip line is separated from the other coupling line based on the third strip line and the fourth strip line by the second inner layer ground electrode. Therefore, it is possible to suppress any interference between the coupling lines, and it is possible to obtain the good balance of the input/output characteristics of the unbalanced-balanced converting section.




When a DC electrode, which is connected to a DC power source, is formed on a surface of the dielectric substrate, the unbalanced-balanced converting section may comprise a first strip line which is formed on a first principal surface of the dielectric layer and which has a first end constituting an unbalanced input/output section; a second strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line; a third strip line which is formed on a first principal surface of the dielectric layer and which has a first end connected to a second end of the first strip line; and a fourth strip line which is formed on a first principal surface of the dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to the DC electrode at an arbitrary position on the line.




In this arrangement, the stacked dielectric filter may further comprise an inner layer ground electrode which is provided in the dielectric substrate and which is connected to a ground electrode, wherein the second and fourth strip lines are connected to the DC electrode at respective arbitrary positions on the second and fourth strip lines through via-holes respectively beyond the inner layer ground electrode. Alternatively, the stacked dielectric filter may further comprise an inner layer DC electrode which is provided in the dielectric substrate and which is connected to the DC electrode, wherein the second and fourth strip lines are connected to the inner layer DC electrode at respective arbitrary positions on the second and fourth strip lines through the via-holes respectively.




Further, in the present invention, a width of the first strip line, a length of the first strip line, a width of the second strip line, an electrically effective length of the second strip line, a width of the third strip line, a length of the third strip line, a width of the fourth strip line, an electrically effective length of the fourth strip line, and a dielectric constant or dielectric constants of one or more of the dielectric layers disposed in a region ranging from the first strip line to the fourth strip line are appropriately determined. Accordingly, it is possible to easily determine an output impedance, level balance, and phase balance of the unbalanced-balanced converting section.




In this arrangement, an input impedance of the unbalanced-balanced converting section may have a value other than 50Ω.




In the present invention, a coupling-adjusting electrode for adjusting a coupling degree for the plurality of resonators is formed at a position separated from the connecting section with the resonators interposed therebetween. In this arrangement, if the coupling-adjusting electrode is formed near the connecting section, any stray coupling may be generated between the coupling-adjusting electrode and the connecting section (or the connecting electrode when the connecting section has the connecting electrode connected to the filter section via the capacitor), and it is impossible to eliminate the unnecessary matching. For this reason, it is preferable that the coupling-adjusting electrode is formed at the position separated from the connecting section with the resonators interposed therebetween.




When the resonators are composed of a plurality of resonant electrodes arranged in a stacking direction, the coupling-adjusting electrode may be formed on a first principal surface of one dielectric layer of one or more of the dielectric layers arranged between the resonant electrodes.




In the present invention, the plurality of resonators of the filter section may have different resonance frequencies respectively, and an apparent reactance element may be equivalently connected to an output side of the unbalanced-balanced balanced converting section. Accordingly, when an IC is connected to the unbalanced-balanced converting section, the impedance matching between the unbalanced-balanced converting section and the IC can be realized without inserting any additional matching circuit. Thus, the size of the circuit system including the stacked dielectric filter and the IC can be compact.




As described above, the stacked dielectric filter according to the present invention provides the following effects.




(1) It is possible to effectively realize the miniaturization while realizing the balanced input/output taking the connection of the high frequency amplifying circuit or the like into consideration.




(2) When the IC is connected to the unbalanced-balanced converting section, it is unnecessary to separately insert the circuit for connecting the DC power source to the IC. It is possible to reduce the number of parts, suppress the insertion loss, and miniaturize the size of the electronic devices including the IC.




(3) When the IC is connected to the unbalanced-balanced converting section, it is unnecessary to insert the circuit for matching the impedance between the unbalanced-balanced converting section and IC. It is possible to reduce the number of parts, suppress the insertion loss, and miniaturize the size of the electronic devices including the IC.




(4) It is possible to increase the degree of flexibility of the design.




(5) It is possible to reduce the electrode area in the filter section, and it is possible to suppress the stray coupling in the unbalanced-balanced converting section.




The above and other objects, features, and advantages of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings in which a preferred embodiment of the present invention is shown by way of illustrative example.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

shows a perspective view illustrating a stacked dielectric filter according to a first embodiment;





FIG. 2

shows an exploded perspective view illustrating the stacked dielectric filter according to the first embodiment;





FIG. 3

shows the bandpass characteristics and the reflection characteristics of Comparative Example and Working Example;





FIG. 4

shows an equivalent circuit of a converting section of the stacked dielectric filter according to the first embodiment;





FIG. 5A

illustrates an example in which the width of a first portion is narrowed in a first strip line;





FIG. 5B

illustrates an example in which the width of a second strip line of second and third strip lines is narrowed;





FIG. 6

illustrates the relationship of respective dielectric constants of stacked dielectric layers in the converting section;





FIG. 7

shows a circuit diagram illustrating a form of use adopted when an IC is connected to an unbalanced-balanced converting element;





FIG. 8

shows a circuit diagram illustrating a form of use adopted when an IC is connected to the stacked dielectric filter according to the first embodiment;





FIG. 9

shows a circuit diagram illustrating an example in which an apparent reactance circuit is equivalently connected to the output side of the converting section;





FIG. 10

shows a circuit diagram illustrating another example in which an apparent reactance circuit is equivalently connected to the output side of the converting section;





FIG. 11

shows a circuit diagram illustrating an example of the method for adjusting the input impedance of the converting section;





FIG. 12

shows a circuit diagram illustrating another example of the method for adjusting the input impedance of the converting section;





FIG. 13

shows an equivalent circuit of a converting section of a modified embodiment of the stacked dielectric filter according to the first embodiment;





FIG. 14

shows a perspective view illustrating the modified embodiment of the stacked dielectric filter according to the first embodiment;





FIG. 15

shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the first embodiment;





FIG. 16

illustrates a general form of use of the stacked dielectric filter;





FIG. 17

shows a perspective view illustrating a stacked dielectric filter according to a second embodiment;





FIG. 18

shows an exploded perspective view illustrating the stacked dielectric filter according to the second embodiment;





FIG. 19

illustrates the relationship of respective dielectric constants of stacked dielectric layers in a converting section;





FIG. 20

shows a perspective view illustrating a modified embodiment of the stacked dielectric filter according to the second embodiment;





FIG. 21

shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the second embodiment;





FIG. 22

shows a perspective view illustrating a stacked dielectric filter according to a third embodiment;





FIG. 23

shows an exploded perspective view illustrating the stacked dielectric filter according to the third embodiment;





FIG. 24

shows a perspective view illustrating a modified embodiment of the stacked dielectric filter according to the third embodiment;





FIG. 25

shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the third embodiment;





FIG. 26

shows a perspective view illustrating a stacked dielectric filter according to a fourth embodiment;





FIG. 27

shows an exploded perspective view illustrating the stacked dielectric filter according to the fourth embodiment;





FIG. 28

shows a perspective view illustrating a modified embodiment of the stacked dielectric filter according to the fourth embodiment;





FIG. 29

shows an exploded perspective view illustrating the modified embodiment of the stacked dielectric filter according to the fourth embodiment; and





FIG. 30

shows an exploded perspective view illustrating a conventional stacked dielectric filter.











DESCRIPTION OF THE PREFERRED EMBODIMENTS




Several illustrative embodiments of a dielectric filter of a stacked type according to the present invention will be explained below with reference to

FIGS. 1

to


29


. In the following embodiments, explanation will be made principally for a case in which an input side is of an unbalanced type and an output side is of a balanced type. The present invention is also applicable to a case reverse to the above, as well as to the case in which both the input side and output side are balanced.




As shown in

FIG. 1

, a stacked dielectric filter


10


A according to a first embodiment has a dielectric substrate


14


. The dielectric substrate


14


comprises a plurality of dielectric layers (S


1


to S


10


, see

FIG. 2

) which are stacked, sintered, and integrated into one unit. Ground electrodes


12




a


,


12




b


are formed on both principal surfaces (first principal surface of the first dielectric layer S


1


and first principal surface of the tenth dielectric layer S


10


) of the dielectric substrate


14


.




As shown in

FIG. 2

, a filter section


20


, an unbalanced-balanced converting section (converting section


28


), and a connecting section


30


are provided in the dielectric substrate


14


. The filter section


20


has first and second input side resonant electrodes


16




a


,


16




b


(¼ wavelength input side resonator) and first and second output side resonant electrodes


18




a


,


18




b


(¼ wavelength output side resonator). The converting section


28


has a plurality of strip lines


22


,


24


,


26


. The connecting section


30


connects the filter section


20


and the converting section


28


. In this embodiment, one input side resonator is constructed by the first and second input side resonant electrodes


16




a


,


16




b


which are aligned in the stacking direction, and one output side resonator is constructed by the first and second output side resonant electrodes


18




a


,


18




b


which are aligned in the stacking direction.




As shown in

FIG. 2

, the dielectric substrate


14


comprises the first dielectric layer S


1


to the tenth dielectric layer S


10


which are piled up in this order from the top. Each of the first to tenth dielectric layers S


1


to S


10


has one layer or a plurality of layers.




The filter section


20


and the converting section


28


are formed in regions which are separated vertically in the stacking direction of the dielectric layers S


1


to S


10


in the dielectric substrate


14


respectively. For example, as viewed in

FIG. 2

, the filter section


20


is formed at an upper portion in the stacking direction, the converting section


28


is formed at a lower portion in the stacking direction, and the connecting section


30


is formed between the filter section


20


and the converting section


28


.




In other words, the filter section


20


is formed in the region ranging from the second dielectric layer S


2


to the fifth dielectric layer S


5


, the converting section


28


is formed in the region including the eighth and ninth dielectric layers S


8


, S


9


, and the connecting section


30


is formed in the region including the fifth and sixth dielectric layers S


5


, S


6


. Further, an inner layer ground electrode


32


, which is provided in order to isolate the filter section


20


from the converting section


28


, is formed in the dielectric substrate


14


.




The first and second input side resonant electrodes


16




a


,


16




b


and the first and second output side resonant electrodes


18




a


,


18




b


constitute the two ¼ resonators respectively. Therefore, for example, as shown in

FIG. 1

, the short circuit end of each of the resonant electrodes


16




a


,


16




b


,


18




a


,


18




b


is connected to a ground electrode


12




c


which is formed on a first side surface


14




a


of the dielectric substrate


14


.




In the filter


10


A, as shown in

FIG. 1

, an unbalanced input terminal


34


is formed at a central portion of a second side surface


14




b


of the outer circumferential surface of the dielectric substrate


14


, and ground electrodes


12




d


are formed on both sides of the unbalanced input terminal


34


. First and second balanced output terminals


36




a


,


36




b


are formed on a third side surface


14




c


which is disposed on the side opposite to the second side surface


14




b


. There are areas for insulating the unbalanced input terminal


34


and the balanced output terminals


36




a


,


36




b


from the ground electrodes (including the inner layer ground electrode).




As shown in

FIG. 2

, the first input side resonant electrode


16




a


and the first output side resonant electrode


18




a


are formed on the first principal surface of the third dielectric layer S


3


. A first lead electrode


38


is formed between a position in the vicinity of the open end of the first input side resonant electrode


16




a


and the unbalanced input terminal


34


(see FIG.


1


).




The second input side resonant electrode


16




b


and the second output side resonant electrode


18




b


are formed on the first principal surface of the fourth dielectric layer S


4


. A second lead electrode


41


is formed between a position in the vicinity of the open end of the second input side resonant electrode


16




b


and the unbalanced input terminal


34


.




First and second inner layer ground electrodes


40


,


42


and a coupling-adjusting electrode


44


are formed on the first principal surface of the second dielectric layer S


2


. Both first ends of the inner layer ground electrodes


40


,


42


are connected to the ground electrode


12




e


. The ground electrode


12




e


is formed on the fourth side surface


14




d


of the dielectric substrate


14


(see FIG.


1


). The second dielectric layer S


2


is interposed between the inner layer ground electrode


40


and the open end of the first input side resonant electrode


16




a


and between the inner layer ground electrode


42


and the open end of the first output side resonant electrode


18




a


. The coupling-adjusting electrode


44


is an electrode for adjusting the coupling degree for the input side resonator and the output side resonator.




Third and fourth inner layer ground electrodes


46


,


48


and an output capacitor electrode


50


are formed on the first principal surface of the fifth dielectric layer S


5


. Both first ends of the third and fourth inner layer ground electrodes


46


,


48


are connected to the ground electrode


12




e


. The fourth dielectric layer S


4


is interposed between the inner layer ground electrode


46


and the open end of the second input side resonant electrode


16




b


, between the inner layer ground electrode


48


and the open end of the second output side resonant electrode


18




b


, and between the output capacitor electrode


50


and the second output side resonant electrode


18




b


. The output capacitor electrode


50


is electrically connected to a connecting electrode


54


through a via-hole


52


which is provided for the fifth dielectric layer S


5


.




The connecting electrode


54


, which is provided in order to connect the output side of the filter section


20


and the input side of the converting section


28


, is formed on the first principal surface of the sixth dielectric layer S


6


. The first end of the connecting electrode


54


is connected to the via-hole


52


described above. The fourth and fifth dielectric layers S


4


, S


5


are interposed between the second end of the connecting electrode


54


and the second input side resonant electrode


16




b


. The second end of the connecting electrode


54


is connected to a via-hole


56


which is communicated with the converting section


28


. The connecting section


30


is constructed by the output capacitor electrode


50


, the via-hole


52


, and the connecting electrode


54


.




The inner layer ground electrode


32


is formed on the first principal surface of the seventh dielectric layer S


7


. There is an area for insulating the inner layer ground electrode


32


from the via-hole


56


, i.e., the area on which no electrode film is formed.




The first strip line


22


of the converting section


28


is formed on the first principal surface of the eighth dielectric layer S


8


. The first strip line


22


is patterned in a spiral form from a start end


60


(first start end


60


). The first strip line


22


is configured to be converged in a spiral form toward a terminal end


62


arranged at a position in linear symmetry to the first start end


60


(position in linear symmetry about a line m by which a line segment for connecting the first and second balanced output terminals


36




a


,


36




b


is equally divided into two). The second end of the connecting electrode


54


described above is electrically connected through the via-hole


56


at the first start end


60


or at a position in the vicinity of the first start end


60


of the first strip line


22


. In the following description, the position of connection with respect to the via-hole


56


on the first strip line


22


is referred to as “first connection position


61


”.




The second and third strip lines


24


,


26


in the converting section


28


are formed on the first principal surface of the ninth dielectric layer S


9


. The second strip line


24


is configured to be patterned in a spiral form from a start end (second start end


64


) corresponding to the first start end


60


of the first strip line


22


described above toward the first balanced output terminal


36




a


. The third strip line


26


is configured to be patterned in a spiral form from a start end (third start end


66


) corresponding to the terminal end


62


of the first strip line


22


described above toward the second balanced output terminal


36




b.






It is preferable that the spiral shapes of the second and third strip lines


24


,


26


are mutually in linear symmetry (linear symmetry about the line m). Physical lengths of the second and third strip lines


24


,


26


are substantially identical with each other.




The second strip line


24


is electrically connected to the ground electrode


12




b


through the via-hole


68


at the second start end


64


or at a position in the vicinity of the second start end


64


(second connection portion


65


). The third strip line


26


is electrically connected to the ground electrode


12




b


through the via-hole


70


at the third start end


66


or at a position in the vicinity of the third start end


66


(third connection portion


67


).




In other words, in the filter


10


A, the planes, on which the respective resonant electrodes


16




a


,


16




b


,


18




a


,


18




b


of the input side resonator and the output side resonator are formed, are parallel to the planes on which the ground electrodes


12




a


,


12




b


are formed. Further, in the filter


10


A, the plane (second side surface


14




b


), on which the unbalanced input terminal


34


of the filter section


20


is formed, is perpendicular to the planes on which the respective strip lines


22


,


24


,


26


in the converting section


28


are formed.




Further, in the filter


10


A, the first to tenth dielectric layers S


1


to S


10


of arbitrarily established different materials are used as the plurality of dielectric layers of the dielectric substrate


14


, and the dielectric layers are stacked, sintered, and integrated into one unit.




It is preferable that dielectric layers having high dielectric constants (for example, ∈=25) are used as the dielectric layers (first to sixth dielectric layers S


1


to S


6


) of the portion for forming the capacitor in the filter section


20


. The dielectric layers having low dielectric constants (for example, ∈=7) are used as the dielectric layers (seventh to tenth dielectric layers S


7


to S


10


) for the converting section


28


.




As described above, in the filter


10


A, the filter section


20


of the unbalanced input system and the converting section


28


having the first to third strip lines


22


,


24


,


26


are integrated into one unit in the dielectric substrate


14


. Therefore, the filter


10


A can be constructed with the ¼ wavelength resonator which is advantageous to realize the small size as the filter section


20


. It is possible to miniaturize the filter as compared with a stacked dielectric filter of the balanced type of the ½ wavelength resonator.




When the components are integrated into one unit, it is unnecessary for the characteristic impedance between the filter section


20


and the converting section


28


to have a specified value (for example, 50Ω). It is possible to arbitrarily determine the characteristic impedance between the filter section


20


and the converting section


28


. Therefore, it is possible to flexibly design filters. Further, the filter section


20


can be easily formed, and the line widths of the strip lines


22


,


24


,


26


in the converting section


28


can be widened, because the characteristic impedance between both can be low. Therefore, the loss in the converting section


28


can be also reduced.




It is preferable in the filter


10


A, that the dielectric layer of the portion for forming the capacitor in the filter section


20


is made of material different from the material of the dielectric layer for the converting section


28


. The dielectric constant of the dielectric layer of the portion for forming the capacitor in the filter section


20


should be higher than the dielectric constant of the dielectric layer for the converting section


28


. Therefore, it is possible to reduce the electrode area in the filter section


20


. Further, it is possible to suppress the stray coupling in the converting section


28


.




The filter section


20


is formed at the upper portion in the stacking direction of the dielectric layers of the dielectric substrate


14


, and the converting section


28


is formed at the lower portion in the stacking direction. Therefore, the inner layer ground electrode


32


, which is provided in order to isolate the filter section


20


from the converting section


28


, can be easily formed between the filter section


20


and the converting section


28


. Thus, it is possible to improve the characteristics. The mounting area is also reduced by arranging the filter section


20


and the converting section


28


at the upper and lower portions of the dielectric substrate


14


respectively.




When the tap structure, in which the second output side resonant electrode


18




b


is directly connected to the converting section


28


, is adopted, then the filter section


20


and the converting section


28


may cause unnecessary matching issues in an attenuation region of the bandpass characteristic, and an unnecessary peak may be formed in the attenuation region. However, in the filter


10


A, the filter section


20


is connected to the converting section


28


via the capacitor by the output capacitor electrode


50


with respect to the second output side resonant electrode


18




b


. Therefore, it is possible to shift the phase of the converting section


28


with the capacitor, and it is possible to suppress the unnecessary matching issues with respect to the filter section


20


. Further, the connecting electrode


54


is formed on the side of the filter section


20


(at the position close to the filter section


20


as compared with the inner layer ground electrode


32


). Therefore, no unnecessary peak is generated in the bandpass characteristic.




The second and third strip lines


24


,


26


are in linear symmetry about the line m by which the line segment for connecting the first and second balanced output terminals


36




a


,


36




b


is equally divided into two. Therefore, it is possible to obtain the good balance for the output characteristics of the respective balanced output terminals


36




a


,


36




b.






In the filter


10


A, a relief


80


in a spiral shape is formed in each of the first to third strip lines


22


,


24


,


26


in the converting section


28


so that the interference with the unbalanced input terminal


34


is suppressed. In the filter


10


A, each of the first to third strip lines


22


,


24


,


26


is partially bent so that a certain distance is maintained from the unbalanced input terminal


34


.




An exemplary experiment will now be described. In this exemplary experiment, the bandpass characteristic and the reflection characteristic were investigated for a Comparative Example and a Working Example.




The Comparative Example was a stacked dielectric filter of the unbalanced type. Specifically, the stacked dielectric filter of the unbalanced type was constructed in the same manner as the filter


400


shown in FIG.


30


. The Working Example was constructed in the same manner as the filter


10


A described above.




Experimental results are shown in FIG.


3


. In

FIG. 3

, Solid Line A indicates the bandpass characteristic of the Comparative Example, and Broken Line B indicates the bandpass characteristic of the Working Example. Solid Line C indicates the reflection characteristic of the Comparative Example, and Broken Line D indicates the reflection characteristic of the Working Example. The characteristics of the Comparative Example were illustrative of the results obtained by performing the measurement without using a balun.




According to the experimental results, it is understandable that the attenuation pole is located at the position close to the band of use, signals in regions other than the bandpass region can be efficiently attenuated, and the reflection is reduced in the Working Example as compared with the Comparative Example. It is clear that the characteristics are further deteriorated when the balun is separately connected to the filter of the Comparative Example. On the contrary, it is understandable that the characteristics are remarkably improved in the Working Example as compared with the Comparative Example, because it is unnecessary to separately connect the balun in the Working Example.




Next, explanation will be made with reference to an equivalent circuit shown in

FIG. 4

for the adjustment of the output impedance, the level balance, and the phase balance of the converting section


28


of the filter


10


A.




The equivalent circuit shown in

FIG. 4

is illustrative of the converting section


28


of the filter


10


A. As for the first strip line


22


, the portion (first portion


22




a


) corresponding to the second strip line


24


and the portion (second portion


22




b


) corresponding to the third strip line


26


are connected in series. The first end (terminal end


62


) of the second portion


22




b


is the open end.




The second strip line


24


is connected between GND and the first balanced output terminal


36




a


, and the third strip line


26


is connected between GND and the second balanced output terminal


36




b.






The level balance herein refers to whether an identical signal level (absolute value) is outputted from the first and second balanced output terminals


36




a


,


36




b


. The phase balance herein refers to whether phases of signals outputted from the first and second balanced output terminals


36




a


,


36




b


are related by 180°.




At first, the level balance can be adjusted by appropriately changing the widths W


3


, W


4


of the second and third strip lines


24


,


26


. For example, it is assumed that the first signal level outputted from the first balanced output terminal


36




a


is lower than the second signal level outputted from the second balanced output terminal


36




b


. When the width W


3


of the second strip line


24


is widened, or when the width W


4


of the third strip line


26


is narrowed, then the first signal level is raised, or the second signal level is lowered. Accordingly, it is possible to adjust the level balance.




As for this feature, the level balance can be also adjusted by appropriately changing the width W


1


of the first portion


22




a


of the first strip line


22


or the width W


2


of the second portion


22




b


.

FIGS. 5A and 5B

are illustrative of the case in which the width W


1


of the first portion


22




a


of the first strip line


22


and the width W


3


of the second strip line


24


are narrowed.




When the level balance is adjusted, the phase difference between the first and second signal levels may be deviated from 180°. Accordingly, the phase balance can be adjusted by appropriately changing any one or more electrically effective length or lengths of the electrically effective length L


1


of the first portion


22




a


of the first strip line


22


, the electrically effective length L


2


of the second portion


22




b


, the electrically effective length L


3


of the second strip line


24


, and the electrically effective length L


4


of the third strip line


26


.




When the electrically effective length L


1


of the first portion


22




a


is changed, the first connection position


61


on the first strip line


22


may be appropriately changed. When the electrically effective length L


2


of the second portion


22




b


is changed, the position of the terminal end


62


may be changed. When the electrically effective length L


3


of the second strip line


24


is changed, the connection portion


65


on the second strip line


24


may be appropriately changed. When the electrically effective length L


4


of the third strip line


26


is changed, the third connection portion


67


on the third strip line


26


may be appropriately changed.




On the other hand, the output impedance of the converting section


28


can be also easily adjusted by appropriately changing the widths W


1


, W


2


and the electrically effective lengths L


1


, L


2


of the first and second portions


22




a


,


22




b


of the first strip line


22


described above, the width W


3


and the electrically effective length L


3


of the second strip line


24


, and the width W


4


and the electrically effective length L


4


of the third strip line


26


. However, the output impedance of the converting section


28


can be easily adjusted as well by changing the dielectric constant of the eighth dielectric layer S


8


existing between the first strip line


22


and the second and third strip lines


24


,


26


.




For example, as shown in

FIG. 6

, it is assumed that ∈


1


represents the dielectric constant of the eighth dielectric layer S


8


, and ∈


2


represents the respective dielectric constants of the seventh dielectric layer S


7


and the ninth dielectric layer S


9


. When ∈


1


<∈


2


is established, the output impedance of the converting section


28


is raised. When ∈


1


>∈


2


is established, the output impedance is lowered.




Usually, as shown in

FIG. 7

, the output impedance of the unbalanced-balanced converting element


200


is twice the input impedance of the unbalanced-balanced converting element


200


. For example, when the input impedance of the unbalanced-balanced converting element


200


is 50Ω, the output impedance is 100Ω. However, assuming that an IC


202


is connected to the unbalanced-balanced converting element


200


, when the impedance necessary to effect the matching to the IC


202


is, for example, 50Ω, the impedance matching is not satisfied. It is necessary to additionally provide a circuit


204


for effecting the impedance matching between the unbalanced-balanced converting element


200


and the IC


202


.




However, in the case of the filter


10


A, even when the input impedance of the converting section


28


is 50Ω as described above, the output impedance of the converting section


28


can be easily matched to the input impedance of the IC


202


by appropriately setting the various parameters described above. As shown in

FIG. 8

, it is unnecessary to connect any additional matching circuit, and it is possible to directly connect the IC


202


to the output terminal of the converting section


28


. This results in the miniaturization of the circuit system including the filter


10


A and the IC.




The technique for adjusting the output impedance of the converting section


28


includes the setting of the various parameters as described above, and a method for equivalently connecting an apparent reactance circuit


206


(see

FIGS. 9 and 10

) to the output side of the converting section


28


. This method can be realized by allowing the plurality of resonators of the filter section


20


to have different resonance frequencies. For example, as shown in

FIG. 9

, the physical length of the output side resonant electrode


18


is shorter than the physical length of the input side resonant electrode


16


. Further, for example, as shown in

FIG. 10

, the area of the open end of the input side resonant electrode


16


is larger than the area of the open end of the output side resonant electrode


18


.




Accordingly, for example, when the filter section


20


is a single unit, the filter section


20


operates as if the reactance circuit is connected for making the resonance frequencies of the resonators equivalent. However, in the first embodiment, the filter section


20


and the converting section


28


are integrated into one unit. Therefore, the reactance circuit


206


operates as if the reactance circuit


206


is connected to the output terminal of the converting section


28


. The reactance circuit


206


contributes to the adjustment of the output impedance of the converting section


28


.




In the filter


10


A, the filter section


20


and the converting section


28


are integrated into one unit as described above. Therefore, it is unnecessary to set a specified value (for example, 50Ω) for the characteristic impedance between the filter section


20


and the converting section


28


. In other words, it is possible to set a value other than 50Ω for the input impedance of the converting section


28


. For example, as shown in

FIG. 11

, the input impedance of the converting section


28


can be adjusted to have an arbitrary value by appropriately changing the capacitance value of the capacitor C


1


formed between the output side resonant electrode


18


(or second output side resonant electrode


18




b


in

FIG. 2

) of the filter section


20


and the output capacitor electrode


50


of the connecting section


30


.




When the output side resonant electrode


18


(


18




b


) of the filter section


20


is directly connected through the via-hole


52


to the connecting electrode


54


of the connecting section


30


as shown in

FIG. 2

, the input impedance of the converting section


28


can be adjusted to have an arbitrary value by appropriately changing the connection position of the via-hole


52


with respect to the output side resonant electrode


18


as shown in FIG.


12


.




Next, a modified embodiment of the filter


10


A will be explained with reference to

FIGS. 13

to


16


.




A filter


10


A


a


is constructed in approximately the same manner as the filter


10


A described above. However, as illustrated in an equivalent circuit shown in

FIG. 13

, the former is different from the latter in that a DC power source is connected to the second and third strip lines


24


,


26


in the converting section


28


.




Specifically, as shown in

FIG. 14

, a DC electrode


210


, which is connected to the DC power source, is formed at a portion of the third side surface


14




c


of the dielectric substrate


14


between the first and second balanced output terminals


36




a


,


36




b.






Further, as shown in

FIG. 15

, an inner layer DC electrode


212


, which is connected to the DC electrode


210


, is formed on a first principal surface of an eleventh dielectric layer S


11


positioned under the tenth dielectric layer S


10


. The second connection portion


65


of the second strip line


24


and the third connection portion


67


of the third strip line


26


are connected to the inner layer DC electrode


212


through the via-holes


68


,


70


respectively. In this arrangement, areas


214


,


216


for insulating the via-holes


68


,


70


from the ground electrode


12




b


are formed on the first principal surface of the tenth dielectric layer S


10


.




Accordingly, as shown in

FIG. 13

, the DC power source is connected at the second and third connection portions


65


,


67


of the second and third strip lines


24


,


26


respectively. Further, capacitors C


2


, C


3


are formed between the second and third strip lines


24


,


26


and the ground electrode


12




b


(GND).




Explanation will now be made for use of the stacked dielectric filter. In general, when the stacked dielectric filter is used, for example, as shown in

FIG. 16

, the unbalanced-balanced converting element


222


is connected to the stacked dielectric filter


220


, and the IC


202


is further connected to the unbalanced-balanced converting element


222


. In this case, a DC voltage is separately supplied to the IC


202


.




Usually, as shown in

FIG. 16

, it is necessary to provide a dedicated circuit


224


for supplying the DC voltage between the stacked dielectric filter


220


and the IC


202


. However, it is unnecessary to connect the dedicated circuit


224


with the present invention, because the balanced signal, in which the received signal component is superimposed on the DC voltage, is outputted from the converting section


28


of the filter


10


A


a


shown in

FIGS. 13

to


15


described above. Therefore, it is possible to realize the miniaturization of the circuit system including the filter


10


A


a


and the IC


202


.




Next, a stacked dielectric filter


10


B according to a second embodiment will be explained with reference to

FIGS. 17 and 18

.




As shown in

FIG. 17

, the filter


10


B has a dielectric substrate


14


. The dielectric substrate


14


is constructed by stacking, sintering, and integrating a plurality of dielectric layers (S


1


to S


12


, see

FIG. 18

) into one unit. Ground electrodes


12




a


,


12




b


are formed on both principal surfaces of the dielectric substrate


14


(first principal surface of the first dielectric layer S


1


and first principal surface of the twelfth dielectric layer S


12


) respectively.




As shown in

FIG. 18

, a filter section


20


is formed at a left portion of the dielectric substrate


14


in the stacking direction of the dielectric layers S


1


to S


12


, a converting section


28


is formed at a right portion in the stacking direction, and a connecting section


30


is formed at a lower portion in the stacking direction.




As shown in

FIG. 17

, an unbalanced input terminal


34


is formed at a central portion of a fourth side surface


14




d


of the outer circumferential surface of the dielectric substrate


14


, and ground electrodes


12




e


are formed on both sides of the unbalanced input terminal


34


. First and second balanced output terminals


36




a


,


36




b


are formed on a first side surface


14




a


disposed on the side opposite to the fourth side surface


14




d


. Ground electrodes


12




d


,


12




f


are formed on second and third side surfaces


14




b


,


14




c


respectively. There are areas for insulating the unbalanced input terminal


34


and the balanced output terminals


36




a


,


36




b


from the ground electrodes (including inner layer ground electrodes described later on).




As shown in

FIG. 18

, the filter section


20


has an input side resonant electrode


16


(¼ wavelength input side resonator) which is formed on the first principal surface of the fourth dielectric layer S


4


, and an output side resonant electrode


18


(¼ wavelength output side resonator) which is formed on the first principal surface of the eighth dielectric layer S


8


. Each of the resonant electrodes


16


,


18


has an L-shaped configuration in which the pattern is bent at an intermediate position. Respective short circuit ends are connected to the ground electrode


12




e


on the fourth side surface


14




d


(see FIG.


17


), and respective open ends are formed to be wider than intermediate portions.




An input electrode


90


, which has a first end connected to the unbalanced input terminal


34


, is formed on the first principal surface of the second dielectric layer S


2


. The input electrode


90


is electrically connected to the input side resonant electrode


16


through a via-hole


92


which is formed between the second and third dielectric layers S


2


, S


3


.




An inner layer ground electrode


94


is formed on the first principal surface of the third dielectric layer S


3


. The inner layer ground electrode


94


has a first end which is connected to the ground electrode


12




e


. The third dielectric layer S


3


is interposed between the inner layer ground electrode


94


and the open end of the input side resonant electrode


16


.




A first electrode


44




a


of a coupling-adjusting electrode


44


and an inner layer ground electrode


96


are formed on the first principal surface of the fifth dielectric layer S


5


. The fourth dielectric layer S


4


is interposed between the first electrode


44




a


and the input side resonant electrode


16


. The inner layer ground electrode


96


has a first end which is connected to the ground electrode


12




e


. The fourth dielectric layer S


4


is interposed between the inner layer ground electrode


96


and the open end of the input side resonant electrode


16


.




A second electrode


44




b


of the coupling-adjusting electrode


44


and an inner layer ground electrode


98


are formed on the first principal surface of the seventh dielectric layer S


7


. The seventh dielectric layer S


7


is interposed between the second electrode


44




b


and the output side resonant electrode


18


. The inner layer ground electrode


98


has a first end which is connected to the ground electrode


12




e


. The seventh dielectric layer S


7


is interposed between the inner layer ground electrode


98


and the open end of the output side resonant electrode


18


.




An inner layer ground electrode


100


is formed on the first principal surface of the ninth dielectric layer


90


. The inner layer ground electrode


100


has a first end which is connected to the ground electrode


12




e


. The eighth dielectric layer S


8


is interposed between the inner layer ground electrode


100


and the open end of the output side resonant electrode


18


.




The coupling-adjusting electrode


44


is constructed by the first electrode


44




a


, the second electrode


44




b


, and the via-hole


44




c


. The via-hole


44




c


is formed in a region ranging over the fifth and sixth dielectric layers S


5


, S


6


, and the via-hole


44




c


electrically connects the first and second electrodes


44




a


,


44




b.






Additionally, the converting section


28


has inner layer ground electrodes


102


,


104


,


106


, and first to fourth strip lines


22


,


24


,


26


,


108


. The inner layer ground electrode


102


is formed on the first principal surface of the third dielectric layer S


3


, the inner layer ground electrode


104


is formed on the first principal surface of the seventh dielectric layer S


7


, and the inner layer ground electrode


106


is formed on the first principal surface of the tenth dielectric layer S


10


. The first strip line


22


is formed on the first principal surface of the ninth dielectric layer S


9


, the second strip line


24


is formed on the first principal surface of the eighth dielectric layer S


8


, the third strip line


26


is formed on the first principal surface of the sixth dielectric layer S


6


, and the fourth strip line


108


is formed on the first principal surface of the fifth dielectric layer S


5


.




The first strip line


22


is configured to be patterned in a spiral form from a first start end


60


to a terminal end


62


(position disposed closely to the first side surface


14




a


of the dielectric substrate


14


). A second end of the connecting electrode


54


described above is electrically connected through a via-hole


120


at the first start end


60


or at a position in the vicinity of the first start end


60


(first connection position


61


) of the first strip line


22


.




The second strip line


24


is configured to be patterned in a spiral form toward the first balanced output terminal


36




a


from a second start end


64


formed at a position corresponding to the first start end


60


of the first strip line


22


. The inner layer ground electrode


104


is electrically connected through a via-hole


110


at the second start end


64


or at a position in the vicinity of the second start end


64


(second connection portion


65


) of the second strip line


22


.




The third strip line


26


is configured to be converged in a spiral form to a terminal end


112


from a third start end


66


corresponding to the terminal end


62


of the first strip line


22


described above. The terminal end


62


of the first strip line


22


and the third start end


66


of the third strip line


26


are electrically connected to one another through a via-hole


114


formed in a region ranging over the sixth to eighth dielectric layers S


6


to S


8


.




The fourth strip line


108


is configured to be patterned in a spiral form toward the second balanced output terminal


36




b


from a fourth start end


118


formed at a position corresponding to the terminal end


112


of the third strip line


26


. The fourth strip line


108


is electrically connected to the inner layer ground electrode


102


through a via-hole


116


at the fourth start end


118


or at a position in the vicinity of the fourth start end


118


(third connection position


119


) of the fourth strip line


108


.




In other words, in the converting section


28


, one coupling line of the first strip line


22


and the second strip line


24


is separated by the inner layer ground electrode


104


from the other coupling line of the third strip line


26


and the fourth strip line


108


.




The connecting section


30


has an output capacitor electrode


50


and the connecting electrode


54


. The output capacitor electrode


50


is formed at a position opposed to a central portion of the output side resonant electrode


18


on the first principal surface of the tenth dielectric layer S


10


. The connecting electrode


54


is formed on the first principal surface of the eleventh dielectric layer S


11


. A first end of the connecting electrode


54


is connected to the output capacitor electrode


50


through a via-hole


52


. A second end of the connecting electrode


54


is connected to the first connection position


61


of the first strip line


22


through a via-hole


120


. There is an area for insulating the via-hole


120


from the inner layer ground electrode


106


, i.e., an area in which no electrode film is formed.




In the filter


10


B, it is possible to effectively realize the miniaturization, and it is possible to increase the degree of flexibility of designing of each of the components in the same manner as in the filter


10


A.




In the converting section


28


; the one coupling line of the first and second strip lines


22


,


24


is separated by the inner layer ground electrode


104


from the other coupling line of the third and fourth strip lines


26


,


108


. Therefore, unnecessary coupling is not formed between the filter section


20


and the converting section


28


, even though the filter section


20


is not isolated from the converting section


28


. Consequently, it is possible to suppress the interference between the coupling lines, and it is possible to obtain the good balance of the input/output characteristics in the converting section


28


.




Also in the filter


10


B, the planes, on which the respective resonant electrodes


16


,


18


of the input side resonator and the output side resonator are formed, are parallel to the planes on which the ground electrodes


12




a


,


12




b


, are formed in the same manner as in the filter


10


A. The plane, on which the unbalanced input terminal


34


of the filter section


20


is formed, is perpendicular to the planes on which the respective strip lines


22


,


24


,


26


,


108


of the converting section


28


are formed. The unbalanced input terminal


34


is formed at the position separated from the respective strip lines


22


,


24


,


26


,


108


. Accordingly, it is possible to eliminate any unnecessary interference between the unbalanced input terminal


34


and the respective strip lines


22


,


24


,


26


,


108


. It is therefore unnecessary to provide any relief


80


as shown in

FIG. 2

for the respective strip lines


22


,


24


,


26


,


108


. This results in the improvement in characteristics.




Also in the filter


10


B, the output impedance, the level balance, and the phase balance of the converting section


28


can be adjusted by appropriately changing the widths and the electrically effective lengths of the first to fourth strip lines


22


,


24


,


26


,


108


and the dielectric constants of the third to ninth dielectric layers S


3


to S


9


.




When the electrically effective length of the first strip line


22


requires change, that change can be easily realized by appropriately changing the first connection position


61


on the first strip line


22


. When the electrically effective length of the second strip line


24


requires change, that change can be easily realized by appropriately changing the second connection portion


65


.




When the electrically effective length of the third strip line


26


requires change, that change can be easily realized by changing the position of the terminal end


112


of the third strip line


26


. When the electrically effective length of the fourth strip line


108


requires change, that change can be easily realized by appropriately changing the third connection position


119


on the fourth strip line


108


.




For example, as shown in

FIG. 19

, it is assumed that ∈


1


represents the dielectric constants of the fifth and eighth dielectric layers S


5


, S


8


, and ∈


2


represents the respective dielectric constants of the third, fourth, sixth, seventh, and ninth dielectric layers S


3


, S


4


, S


6


, S


7


, S


9


. When ∈


1


<∈


2


is established, the output impedance of the converting section


28


is raised. When ∈


1


>∈


2


is established, the output impedance is lowered.




Also in the filter


10


B, an arrangement can be adopted, in which an apparent reactance circuit is equivalently connected to the output terminal of the converting section


28


. Accordingly, the output impedance of the converting section


28


can be appropriately changed. Further, the input impedance of the converting section


28


can be adjusted to have an arbitrary value.




Next, a modified embodiment of the filter


10


B will be explained with reference to

FIGS. 20 and 21

.




A filter


10


B


a


is constructed in approximately the same manner as the filter


10


B described above. However, the former is different from the latter in the following points.




That is, as shown in

FIG. 20

, a DC electrode


210


, which is connected to a DC power source, is formed between the first and second balanced output terminals


36




a


,


36




b


on the first side surface


14




a


of the dielectric substrate


14


.




Further, as shown in

FIG. 21

, a twentieth dielectric layer S


20


is stacked between the sixth dielectric layer S


6


and the seventh dielectric layer S


7


. A twenty-first dielectric layer S


21


is stacked between the second dielectric layer S


2


and the third dielectric layer S


3


. A first inner layer DC electrode


230


is formed on a first principal surface of the twentieth dielectric layer S


20


. The first inner layer DC electrode


230


is connected to the DC electrode


210


. A second inner layer DC electrode


232


is formed on a first principal surface of the twenty-first dielectric layer S


21


. The first and second inner layer DC electrodes


230


,


232


are connected to the DC electrode


210


.




The second connection portion


65


of the second strip line


24


is connected to the first inner layer DC electrode


230


through the via-hole


110


. The third connection position


119


of the fourth strip line


108


is connected to the second inner layer DC electrode


232


through the via-hole


116


. In this arrangement, areas


234


,


236


for insulating the via-holes


110


,


116


from the inner layer ground electrodes


104


,


102


are formed on the respective first principal surfaces of the seventh dielectric layer S


7


and the third dielectric layer S


3


.




In the filter


10


B


a


, when an IC of the type of the separate supply of the DC voltage is connected to the filter


10


B


a


, the balanced signal, in which the received signal component is superimposed on the DC voltage, is outputted from the converting section


28


. Therefore, it is unnecessary to connect any dedicated circuit for supplying the DC voltage to the IC


202


. As a result, it is possible to realize the miniaturization of the circuit system including the filter


10


B


a


and the IC


202


.




Next, a stacked dielectric filter


10


C according to a third embodiment will be explained with reference to

FIGS. 22 and 23

.




As shown in

FIG. 22

, the filter


10


C has a dielectric substrate


14


. The dielectric substrate


14


is constructed by stacking, sintering, and integrating a plurality of dielectric layers (S


1


to S


15


, see

FIG. 23

) into one unit. Ground electrodes


12




a


,


12




b


are formed on both principal surfaces of the dielectric substrate


14


respectively. It is preferable that in the filter


10


C, respective first principal surfaces of the first to fifteenth dielectric layers S


1


to S


15


are perpendicular to the planes on which the ground electrodes


12




a


,


12




b


are formed.




As shown in

FIG. 23

, a filter section


20


is formed at a former half portion in the stacking direction of the dielectric layers S


1


to S


15


of the dielectric substrate


14


, a converting section


28


is formed at a latter half portion in the stacking direction, and a connecting section


30


is formed at a central portion in the stacking direction.




As shown in

FIG. 22

, an unbalanced input terminal


34


is formed at a central portion of a second side surface


14




b


of the outer circumferential surface of the dielectric substrate


14


. A first balanced output terminal


36




a


is formed on a fourth side surface


14




d


. A second balanced output terminal


36




b


is formed on a first side surface


14




a


. Further, there are areas for insulating the unbalanced input terminal


34


and the respective balanced output terminals


36




a


,


36




b


from the ground electrodes (including inner layer ground electrodes).




As shown in

FIG. 23

, the filter section


20


has an input side resonant electrode


16


(¼ wavelength input side resonator) and an output side resonant electrode


18


(¼ wavelength output side resonator). The input side resonant electrode


16


is formed on the first principal surface of the fourth dielectric layer S


4


. The output side resonant electrode


18


is formed on the first principal surface of the seventh dielectric layer S


7


. Open ends of the resonant electrodes


16


,


18


are formed to be wider than intermediate portions. Respective short circuit end portions of the resonant electrodes


16


,


18


are configured to be branched into two so that they are connected to the upper and lower ground electrodes


12




a


,


12




b


(see FIG.


22


).




An input electrode


90


is formed on the first principal surface of the second dielectric layer S


2


. The input electrode


90


is electrically connected to the unbalanced input terminal


34


through a via-hole


130


which is formed for the first dielectric layer S


1


. The input electrode


90


is electrically connected to the input side resonant electrode


16


through a via-hole


92


which is formed in a region ranging over the second and third dielectric layers S


2


, S


3


. The input electrode


90


is an electrode for adjusting the impedance. In this embodiment, the adjustment is made to 50Ω.




An inner layer ground electrode


94


is formed on the first principal surface of the third dielectric layer S


3


. Both ends of the inner-layer ground electrode


94


are connected to the ground electrodes


12




a


,


12




b


respectively. The third dielectric layer S


3


is interposed between the inner layer ground electrode


94


and the open end of the input side resonant electrode


16


.




A first electrode


44




a


of a coupling-adjusting electrode


44


and an inner layer ground electrode


96


are formed on the first principal surface of the fifth dielectric layer S


5


. The fourth dielectric layer S


4


is interposed between the first electrode


44




a


and the input side resonant electrode


16


. Both ends of the inner layer ground electrode


96


are connected to the ground electrodes


12




a


,


12




b


respectively. The fourth dielectric layer S


4


is interposed between the inner layer ground electrode


96


and the open end of the input side resonant electrode


16


.




A second electrode


44




b


of the coupling-adjusting electrode


44


and an inner layer ground electrode


98


are formed on the first principal surface of the sixth dielectric layer S


6


. The sixth dielectric layer S


6


is interposed between the second electrode


44




b


and the output side resonant electrode


18


. Both ends of the inner layer ground electrode


98


are connected to the ground electrodes


12




a


,


12




b


respectively. The sixth dielectric layer S


6


is interposed between the inner layer ground electrode


98


and the open end of the output side resonant electrode


18


.




The coupling-adjusting electrode


44


is constructed by the first electrode


44




a


, the second electrode


44




b


, and a via-hole


44




c


. The via-hole


44




c


is formed for the fifth dielectric layer S


5


, and it electrically connects the first and second electrodes


44




a


,


44




b.






An inner layer ground electrode


100


and an L-shaped connecting electrode


54


are formed on the first principal surface of the eighth dielectric layer S


8


. Both ends of the inner layer ground electrode


100


are connected to the ground electrodes


12




a


,


12




b


respectively. The seventh dielectric layer S


7


is interposed between the inner layer ground electrode


100


and the open end of the output side resonant electrode


18


. The connecting electrode


54


is formed at a position opposed to the central portion of the output side resonant electrode


18


on the first principal surface of the eighth dielectric layer S


8


. The seventh dielectric layer S


7


is interposed between the connecting electrode


54


and the output side resonant electrode


18


. The connecting electrode


54


has a first end which is connected to the converting section


28


. The connecting electrode


54


also functions as an output capacitor electrode


50


. The connecting section


30


is constructed by the connecting electrode


54


.




An inner layer ground electrode


32


, which is connected to the ground electrodes


12




a


,


12




b


respectively and which is provided in order to isolate the filter section


20


from the converting section


28


, is formed on the first principal surface of the ninth dielectric layer S


9


.




Additionally, the converting section


28


has inner layer ground electrodes


104


,


132


and first to fourth strip lines


22


,


24


,


26


,


108


. The inner layer ground electrode


104


is formed on the first principal surface of the twelfth dielectric layer S


12


, and the inner layer ground electrode


132


is formed on the first principal surface of the fifteenth dielectric layer S


15


. The first strip line


22


is formed on the first principal surface of the tenth dielectric layer S


10


, the second strip line


24


is formed on the first principal surface of the eleventh dielectric layer S


11


, the third strip line


26


is formed on the first principal surface of the thirteenth dielectric layer S


13


, and the fourth strip line


108


is formed on the first principal surface of the fourteenth dielectric layer S


14


.




The first strip line


22


, which is formed on the first principal surface of the tenth dielectric layer S


10


, is configured to be converged in a spiral form from a first start end


60


formed at a position close to the lower surface of the dielectric substrate


14


to a terminal end


62


(approximately central portion of the tenth dielectric layer S


10


). A second end of the connecting electrode


54


described above is electrically connected through a via-hole


120


at the first start end


60


or at a position in the vicinity of the first start end


60


on the first strip line


22


(first connection position


61


).




The second strip line


24


is configured to be patterned in a spiral form toward the first balanced output terminal


36




a


from a second start end


64


formed at an approximately central portion of the eleventh dielectric layer S


11


. The inner layer ground electrode


104


is electrically connected through a via-hole


110


at the second start end


64


or at a position in the vicinity of the second start end


64


on the second strip line


22


(second connection portion


65


).




The third strip line


26


is configured to be patterned in a spiral form from a third start end


66


corresponding to the terminal end of the first strip line


22


described above toward a terminal end


112


(formed at a position close to the lower surface of the dielectric substrate


14


). The first start end


62


and the third start end


66


are electrically connected to one another through a via-hole


114


formed in a region ranging over the tenth to twelfth dielectric layers S


10


to S


12


. There is an area for insulating the via-hole


114


from the inner layer ground electrode


104


, i.e., an area in which no electrode film is formed on the first principal surface of the twelfth dielectric layer S


12


.




The fourth strip line


108


is configured to be patterned in a spiral form from a fourth start end


118


formed at an approximately central portion of the fourteenth dielectric layer S


14


toward the second balanced output terminal


36




b


. The fourth strip line


108


is electrically connected to the inner layer ground electrode


132


through a via-hole


116


at the fourth start end


118


or at a position in the vicinity of the fourth start end


118


(third connection position


119


) on the fourth strip line


108


.




In other words, the converting section


28


is the same as the converting section


28


of the stacked dielectric filter


10


B according to the second embodiment described above. That is, one coupling line of the first and second strip lines


22


,


24


is separated by the inner layer ground electrode


104


from the other coupling line of the third and fourth strip lines


26


,


108


.




Also in the third embodiment, in the same manner as in the first embodiment, the first to fifteenth dielectric layers S


1


to S


15


of different materials are used as the plurality of dielectric layers of the dielectric substrate


14


. The dielectric layers S


1


to S


15


are stacked, sintered, and integrated into one unit.




It is preferable that the dielectric layers having high dielectric constants (for example, ∈=25) are used as the dielectric layers (first to eighth dielectric layers S


1


to S


8


) of the portion for forming the capacitor in the filter section


20


. The dielectric layers having low dielectric constants (for example, ∈=7) are used as the dielectric layers (ninth to fifteenth dielectric layers S


9


to S


15


) for the converting section


28


.




As for the filter


10


C, in the same manner as in the filter


10


A, it is possible to effectively realize the miniaturization, and it is possible to increase the degree of flexibility of designing of each of the components. Further, the filter section


20


is isolated from the converting section


28


by the inner layer ground electrode


32


. Therefore, it is possible to effectively avoid any unnecessary coupling between the filter section


20


and the converting section


28


.




In the converting section


28


, the one coupling line of the first and second strip lines


22


,


24


is separated by the inner layer ground electrode


104


from the other coupling line of the third and fourth strip lines


26


,


108


. Therefore, it is possible to suppress the interference between the coupling lines, and it is possible to obtain the good balance of the output characteristics of the converting section


28


.




Further, in the filter


10


C, the planes, on which the respective resonant electrodes


16


,


18


of the input side resonator and the output side resonator are formed, are perpendicular to the planes on which the ground electrodes


12




a


,


12




b


are formed. Further, the plane, on which the unbalanced input terminal


34


of the filter section


20


is formed, is parallel to the planes on which the respective strip lines


22


,


24


,


26


,


108


of the converting section


28


are formed. Therefore, the unbalanced input terminal


34


and the respective strip lines


22


,


24


,


26


,


108


can be separated from each other. It is possible to eliminate any unnecessary interference between the unbalanced input terminal


34


and the respective strip lines


22


,


24


,


26


,


108


.




The dielectric constants of the dielectric layers of the portion for forming the capacitor in the filter section


20


are higher than the dielectric constants of the dielectric layers of the converting section


28


. Therefore, it is possible to reduce the electrode area in the filter section


20


. Further, it is possible to suppress the stray coupling in the converting section


28


.




Also in the filter


10


C, the output impedance of the converting section


28


, the level balance, and the phase balance can be adjusted by appropriately changing the widths and the electrically effective lengths of the first to fourth strip lines


22


,


24


,


26


,


108


and the dielectric constants of the ninth to fifteenth dielectric layers S


9


to S


15


.




In the filter


10


C, an apparent reactance circuit is equivalently connected to the output terminal of the converting section


28


. No reactance circuit is connected to the output terminal of the converting section


28


. However, the converting section


28


operates as if it is connected to a reactance circuit. The output impedance of the converting section


28


can be appropriately changed. Further, the input impedance of the converting section


28


can be adjusted to have an arbitrary value.




Next, a modified embodiment of the filter


10


C will be explained with reference to

FIGS. 24 and 25

.




A filter


10


C


a


is constructed in approximately the same manner as the filter


10


C described above. However, the former is different from the latter in the following points.




That is, as shown in

FIG. 24

, a DC electrode


210


, which is connected to a DC power source, is formed between first and second balanced output terminals


36




a


,


36




b


on a third side surface


14




c


of a dielectric substrate


14


.




Further, as shown in

FIG. 25

, an inner layer DC electrode


240


is formed on a first principal surface of a sixteenth dielectric layer S


16


. The inner layer DC electrode


240


is connected to the DC electrode


210


. The second connection portion


65


of the second strip line


24


is connected through the via-hole


110


to the inner layer DC electrode


240


. The third connection position


119


of the fourth strip line


108


is connected to the inner layer DC electrode


240


through the via-hole


116


. In this arrangement, an area


242


for insulating the via-hole


110


from the inner layer ground electrode


104


formed on the first principal surface of the twelfth dielectric layer S


12


. Further, an area


244


for insulating the via-hole


116


from the inner layer ground electrode


132


is formed on the first principal surface of the fifteenth dielectric layer S


15


.




Also in the filter


10


C


a


, when an IC


202


which requires a DC voltage is connected to the filter


10


C


a


, it is unnecessary to connect any dedicated circuit for supplying the DC voltage to the IC


202


. As a result, it is possible to realize the miniaturization of the circuit system including the stacked dielectric filter and the IC.




Next, a stacked dielectric filter


10


D according to a fourth embodiment will be explained with reference to

FIGS. 26 and 27

.




The filter


10


D is based on the balanced input system and the balanced output system unlike the filters


10


A to


10


C described above.




As shown in

FIG. 26

, the filter


10


D has a dielectric substrate


14


. The dielectric substrate


14


is constructed by stacking, sintering, and integrating a plurality of dielectric layers (S


1


to S


15


, see

FIG. 27

) into one unit. Ground electrodes


12




a


,


12




b


are formed on both principal surfaces (first principal surface of the first dielectric layer S


1


and first principal surface of the fifteenth dielectric layer S


15


) of the dielectric substrate


14


respectively.




As shown in

FIG. 27

, an input side converting section


28


A is formed at an upper portion in the stacking direction of the dielectric layers S


1


to S


15


of the dielectric substrate


14


, an output side converting section


28


B is formed at a lower portion in the stacking direction, and a filter section


20


is formed at a central portion in the stacking direction. An input side connecting section


30


A is formed between the input side converting section


28


A and the filter section


20


. An output side connecting section


30


B is formed between the output side converting section


28


B and the filter section


20


. In other words, the filter


10


D is constructed such that the input side converting section


28


A and the output side connecting section


30


A are added to the filter


10


A.




Therefore, the constitutive members, which correspond to those of the filter


10


A, are designated by the same reference numerals, duplicate explanation of which will be omitted. As for the respective constitutive members of the input side converting section


28


A, the output side converting section


28


B, the input side connecting section


30


A, and the output side connecting section


30


B, reference numerals for those on the input side are affixed with A, and reference numerals for those on the output side are affixed with B. Duplicate explanation will be omitted for the converting sections


28


A,


28


B and the connecting sections


30


A,


30


B.




In the filter


10


D, the input side converting section


28


A is arranged over the filter section


20


. For this reason, a coupling-adjusting electrode


44


is formed on the first principal surface of the eighth dielectric layer S


8


. A first input side resonant electrode


16




a


and a first output side resonant electrode


18




a


are formed on the first principal surface of the seventh dielectric layer S


7


. A second input side resonant electrode


16




b


and a second output side resonant electrode


18




b


are formed on the first principal surface of the ninth dielectric layer S


9


.




A via-hole


150


for electrically connecting the respective open ends is formed between the first and second input side resonant electrodes


16




a


,


16




b


. A via-hole


152


for electrically connecting the respective open ends is formed between the first and second output side resonant electrodes


18




a


,


18




b.






As shown in

FIG. 26

, a ground electrode


12




d


is formed at a central portion of the second side surface


14




b


of the outer circumferential surface of the dielectric substrate


14


. First and second balanced input terminals


34




a


,


34




b


are formed on both sides of the ground electrode


12




d


. A ground electrode


12




f


is formed at a central portion of the third side surface


14




c


. First and second balanced output terminals


36




a


,


36




b


are formed on both sides of the ground electrode


12




f


. Ground electrodes


12




c


,


12




e


are formed on the first and fourth side surfaces


14




a


,


14




d


respectively. There are areas for insulating the balanced input terminals


34




a


,


34




b


and the balanced output terminals


36




a


,


36




b


from the ground electrodes (including inner layer ground electrodes) respectively.




When the filter


10


D is employed, it is possible to easily manufacture a stacked dielectric filter of the balanced input/output system using the ¼ wavelength resonator. Further, it is also possible to realize the miniaturization of the stacked dielectric filter.




Also in the filter


10


D, the output impedance of the output side converting section


28


B, the level balance, and the phase balance can be adjusted by appropriately changing the respective widths and the electrically effective lengths of the first portion


22


B


a


and the second portion


22


B


b


of the first strip line


22


B, the second strip line


24


B, and the third strip line


26


B of the output side converting section


28


B, and the dielectric constants of the twelfth to fourteenth dielectric layers S


12


to S


14


.




Also in the filter


10


D, an apparent reactance circuit may be equivalently connected to the output terminal of the output side converting section


28


B. It is possible to appropriately change the output impedance of the output side converting section


28


B. Further, the input impedance of the output side converting section


28


B can be adjusted to have an arbitrary value.




Next, a modified embodiment of the filter


10


D will be explained with reference to

FIGS. 28 and 29

.




A filter


10


D


a


is constructed in approximately the same manner as the filter


10


D described above. However, the former is different from the latter in the following points. That is, as shown in

FIG. 28

, a DC electrode


210


, which is connected to a DC power source, is formed between first and second balanced output terminals


36




a


,


36




b


on a third side surface


14




c


of a dielectric substrate


14


.




Further, as shown in

FIG. 29

, an inner layer DC electrode


250


, which is connected to the DC electrode


210


, is formed on a first principal surface of a sixteenth dielectric layer S


16


. The second connection portion


65


B of the second strip line


24


B is connected to the inner layer DC electrode


250


through the via-hole


68


B. The third connection portion


67


B of the third strip line


26


B is connected to the inner layer DC electrode


250


through the via-hole


70


B. In this arrangement, areas


252


and


254


for insulating the via-holes


68


B,


70


B from the ground electrode


12




b


are formed on the first principal surface of the tenth dielectric layer S


10


.




As for the filter


10


D


a


, when an IC


202


which requires the DC voltage is connected to the filter


10


D


a


, it is unnecessary to connect any dedicated circuit for supplying the DC voltage to the IC


202


. As a result, it is possible to realize the miniaturization of the circuit system including the stacked dielectric filter


10


D


a


and the IC


202


.




It is a matter of course that the stacked dielectric filter according to the present invention is not limited to the embodiments described above. Various modifications can be made without deviating from the scope of the present invention.



Claims
  • 1. A stacked dielectric filter comprising a filter section having a plurality of resonators for filtering an unbalanced signal, and at least one unbalanced-balanced converting section having strip lines, said filter section and said unbalanced-balanced converting section being in a dielectric substrate including a plurality of stacked dielectric layers, wherein said unbalanced-balanced converting section is connected via a connecting section to an input side and/or an output side of said filter section.
  • 2. The stacked dielectric filter according to claim 1, wherein said dielectric substrate includes said plurality of stacked dielectric layers made of different materials.
  • 3. The stacked dielectric filter according to claim 2, wherein a dielectric constant of said dielectric layer corresponding to said filter section is higher than a dielectric constant of said dielectric layer corresponding to said unbalanced-balanced converting section.
  • 4. The stacked dielectric filter according to claim 1, wherein said filter section is formed at an upper portion or a lower portion in a stacking direction of said plurality of dielectric layers of said dielectric substrate, and said unbalanced-balanced converting section is formed at a portion other than said upper portion and said lower portion.
  • 5. The stacked dielectric filter according to claim 4, whereinground electrodes are formed on both principal surfaces of said dielectric substrate; and planes on which resonant electrodes of said plurality of resonators are formed and planes on which said ground electrodes are formed are parallel to one another.
  • 6. The stacked dielectric filter according to claim 5, wherein planes on which input/output terminals of said filter section are formed and planes on which said strip lines of said unbalanced-balanced converting section are formed are perpendicular to one another.
  • 7. The stacked dielectric filter according to claim 4, whereinground electrodes are formed on both principal surfaces of said dielectric substrate; and planes on which resonant electrodes of said plurality of resonators are formed and planes on which said ground electrodes are formed are perpendicular to one another.
  • 8. The stacked dielectric filter according to claim 4, wherein planes on which input/output terminals of said filter section are formed and planes on which said strip lines of said unbalanced-balanced converting section are formed are parallel to one another.
  • 9. The stacked dielectric filter according to claim 1, wherein said filter section is formed at a left portion or a right portion in a stacking direction of said plurality of dielectric layers of said dielectric substrate, and said unbalanced-balanced converting section is formed at a portion other than said left portion and said right portion.
  • 10. The stacked dielectric filter according to claim 9, whereinground electrodes are formed on both principal surfaces of said dielectric substrate; and planes on which resonant electrodes of said plurality of resonators are formed and planes on which said ground electrodes are formed are parallel to one another.
  • 11. The stacked dielectric filter according to claim 10, wherein planes on which input/output terminals of said filter section are formed and planes on which said strip lines of said unbalanced-balanced converting section are formed are perpendicular to one another.
  • 12. The stacked dielectric filter according to claim 1, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to a ground electrode, wherein said connecting section is formed separately from said unbalanced-balanced converting section with said inner layer ground electrode interposed therebetween, and said connecting section is electrically connected to an unbalanced input/output section of said unbalanced-balanced converting section.
  • 13. The stacked dielectric filter according to claim 12, wherein said inner layer ground electrode isolates said filter section from said unbalanced-balanced converting section.
  • 14. The stacked dielectric filter according to claim 1, wherein said connecting section has a connecting electrode which is connected to said filter section via a capacitor.
  • 15. The stacked dielectric filter according to claim 1, wherein said unbalanced-balanced converting section comprises:a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on said second strip line; and a third strip line which is formed on said first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said ground electrode at an arbitrary position on said third strip line.
  • 16. The stacked dielectric filter according to claim 15, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to said ground electrode, wherein second ends of said second and third strip lines are connected to said inner layer ground electrode through via-holes.
  • 17. The stacked dielectric filter according to claim 15, wherein said second and third strip lines are arranged in linear symmetry about a line by which a line segment for connecting said plurality of balanced input/output terminals is equally divided into two, and respective physical lengths of said second and third strip lines are substantially identical with each other.
  • 18. The stacked dielectric filter according to claim 15, wherein a width of a first portion of said first strip line corresponding to said second strip line, a length of said first portion, a width of a second portion of said first strip line corresponding to said third strip line, a length of said second portion, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, an electrically effective length of said third strip line, and a dielectric coolant of said dielectric layer disposed between said first strip line and said second and third strip lines are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
  • 19. The stacked dielectric filter according to claim 18, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
  • 20. The stacked dielectric filter according to claim 1, further comprising:a DC electrode which is formed on a surface of said dielectric substrate and which is connected to a DC power source, wherein said unbalanced-balanced converting section comprises: a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said second strip line; and a third strip line which is formed on said first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said third strip line.
  • 21. The stacked dielectric filter according to claim 20, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to a ground electrode, wherein said second and third strip lines are connected to said DC electrode at respective arbitrary positions on said second and third strip lines through via-holes respectively beyond said inner layer ground electrode.
  • 22. The stacked dielectric filter according to claim 21, further comprising:an inner layer DC electrode which is provided in said dielectric substrate and which is connected to said DC electrode, wherein said second and third strip lines are connected to said inner layer DC electrode at respective arbitrary positions on said second and third strip fines through said via-holes respectively.
  • 23. The stacked dielectric filter according to claim 20, wherein said second and third strip lines are arranged in linear symmetry about a center of a line by which a line segment for connecting said plurality of balanced input/output terminals is equally divided into two, and respective physical lengths of said second and third strip lines are substantially identical with each other.
  • 24. The stacked dielectric filter according to claim 20, wherein a width of a first portion of said first strip line corresponding to said second strip line, a length of said first portion, a width of a second portion of said first strip line corresponding to said third strip line, a length of said second portion, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, an electrically effective length of said third strip line, and a dielectric constant of said dielectric layer disposed between said first strip line and said second and third strip lines are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
  • 25. The stacked dielectric filter according to claim 24, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
  • 26. The stacked dielectric filter according to claim 1, wherein said unbalanced-balanced converting section comprises:a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to a ground electrode at an arbitrary position on said second strip line; a third strip line which is formed on a first principal surface of said dielectric layer and which has a first end connected to a second end of said first strip line; and a fourth strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said ground electrode at an arbitrary position on said fourth strip line.
  • 27. The stacked dielectric filter according to claim 26, further comprising:an inner layer ground electrode connected to said ground electrode, said inner layer ground electrode being formed between said dielectric layer on which said second strip line is formed and said dielectric layer on which said third strip line is formed, wherein said second strip line is connected to said inner layer ground electrode at an arbitrary position on said second strip line.
  • 28. The stacked dielectric filter according to claim 26, wherein a width of said first strip line, a length of said first strip line, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, a length of said third strip line, a width of said fourth strip line, an electrically effective length of said fourth strip line, and a dielectric constant or dielectric constants of one or more of said dielectric layers disposed in a region ranging from said first strip line to said fourth strip line are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
  • 29. The stacked dielectric filter according to claim 28, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
  • 30. The stacked dielectric filter according to claim 1, further comprising:a DC electrode which is formed on a surface of said dielectric substrate and which is connected to a DC power source, wherein said unbalanced-balanced converting section comprises: a first strip line which is formed on a first principal surface of said dielectric layer and which has a first end of an unbalanced input/output section; a second strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to one balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said second strip line; a third strip line which is formed on a first principal surface of said dielectric layer and which has a first end connected to a second end of said first strip line; and a fourth strip line which is formed on a first principal surface of said dielectric layer, which has a first end connected to the other balanced input/output terminal, and which is connected to said DC electrode at an arbitrary position on said fourth strip line.
  • 31. The stacked dielectric filter according to claim 30, further comprising:an inner layer ground electrode which is provided in said dielectric substrate and which is connected to a ground electrode, wherein said second and fourth strip lines are connected to said DC electrode at respective arbitrary positions on said second and fourth strip lines through via-holes respectively beyond said inner layer ground electrode.
  • 32. The stacked dielectric filter according to claim 31, further comprising:an inner layer DC electrode which is provided in said dielectric substrate and which is connected to said DC electrode, wherein said second and fourth strip lines are connected to said inner layer DC electrode at respective arbitrary positions on said second and fourth strip lines through said via-holes respectively.
  • 33. The stacked dielectric filter according to claim 30, wherein a width of said first strip line, a length of said first strip line, a width of said second strip line, an electrically effective length of said second strip line, a width of said third strip line, a length of said third strip line, a width of said fourth strip line, an electrically effective length of said fourth strip line, and a dielectric constant or dielectric constants of one or more of said dielectric layers disposed in a region ranging from said first strip line to said fourth strip line are determined corresponding to an output impedance, level balance, and phase balance of said unbalanced-balanced converting section.
  • 34. The stacked dielectric filter according to claim 33, wherein an input impedance of said unbalanced-balanced converting section has a value other than 50Ω.
  • 35. The stacked dielectric filter according to claim 1, wherein a coupling-adjusting electrode for adjusting a coupling degree for said plurality of resonators is formed at a position separated from said connecting section with said resonators interposed therebetween.
  • 36. The stacked dielectric filter according to claim 35, wherein said coupling-adjusting electrode is formed on a first principal surface of one dielectric layer of one or more of said dielectric layers arranged between a plurality of resonant electrodes when said resonators include said plurality of resonant electrodes arranged in a stacking direction.
  • 37. The stacked dielectric filter according to claim 1, whereinsaid plurality of resonators of said filter section have different resonance frequencies respectively; and an apparent reactance element is equivalently connected to an output side of said unbalanced-balanced converting section.
  • 38. The stacked dielectric filter according to claim 1, comprising two unbalanced-balanced converting sections.
  • 39. The stacked dielectric filter according to claim 38, wherein one of said unbalanced-balanced converting sections is arranged prior to the input of the filter section and the other one of said unbalanced-balanced converting sections is arranged after the filter section.
Priority Claims (2)
Number Date Country Kind
2001-201419 Jul 2001 JP
2002-057107 Mar 2002 JP
US Referenced Citations (6)
Number Name Date Kind
5497137 Fujiki Mar 1996 A
5705960 Izumiyama Jan 1998 A
5793265 Spielman Aug 1998 A
5949299 Harada Sep 1999 A
20010010507 Hiroshima et al. Aug 2001 A1
20020171508 Harada et al. Nov 2002 A1
Foreign Referenced Citations (7)
Number Date Country
2351615 Jan 2001 GB
2370921 Jul 2002 GB
2773617 Apr 1998 JP
2840814 Oct 1998 JP
11-317603 Nov 1999 JP
2000-22404 Jan 2000 JP
2000-353904 Dec 2000 JP