Typically, automated tools are employed to assist semiconductor designers in manufacturing a circuit, including taking a functional design of a circuit to a finished layout of the circuit. Integrated circuit (IC) automated design tools are used to transform the circuit design into a circuit layout to be manufactured. This process includes turning a behavioral description of the circuit into a functional description, which is then decomposed into logic functions and mapped into rows of cells using a standard cell library that includes standard cells for predetermined logical functions, such as NAND, NOR, latch, and flip-flop functions. The standard cells may include a transistors, diodes, resistors, inductors, capacitors, or other suitable device, or a combination of one or more such devices formed in a substrate to perform the predetermined logical functions. Automatic place and route (APR) methods and systems may be employed to construct the IC layouts where selected standard cells are placed next to one another in the IC layout. Once mapped into rows of cells, a synthesis is performed to turn the structural design into a physical layout, a clock tree is built to synchronize the structural elements, and the design is optimized post layout. Certain portions of the design and manufacturing process tend to be manual, such as checking quality of the standard cells.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. In addition, the drawings are illustrative as examples of embodiments of the invention and are not intended to be limiting.
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
Automated tools often used to assist semiconductor designers in manufacturing a circuit, including taking a functional design of a circuit to a finished layout of the circuit. The IC design typically includes standard cells or “intellectual property” (IP) blocks (used interchangeably herein), which refer to a reusable, custom designed logic components, storage components, and the like.
In integrated circuit (IC) manufacturing processes, many aspects are automated. However, some portions of the process remain manual, such as checking quality of standard cells during design, optimization, physical implementation, and manufacturing processes for improving power, performance, and area (PPA) of the IC. Such quality checks typically rely on human experience and manual examination of the standard cell. While guidelines for standard cell quality checks may be developed, a systematic approach to checking standard cell quality from the design stage through physical implementation and wafer manufacturing is lacking. Moreover, standard cell quality issues may surface later in the process, such as during physical implementation or wafer manufacturing steps, possibly resulting inferior IC designs quality of return (QoR). For instance, a lack of standard cell design quality review could result in circuits with increased area requirements and/or reduced performance (e.g. slower speed).
The standard cell design process thus relies on human experience for design items such as the cell's size, location, and connections, middle and beginning end of the line (MEOL, BEOL) planning and connections, IO pin accessibility, and the like. Often, standard cell to standard cell spacing is not considered during designing stage. Systematic and well defined checking mechanisms evaluating and comparing the QoR between two cells under a given environment are lacking. Further, while spacing between standard cells can be important in the design process, it can be difficult to model the constraint between two cells for automated processes.
Aspects of this disclosure relate to a standard cell level spacing quality checking methodology. Cell to cell spacing checking is provided for designs under various environments such as power delivery (PG) network structures, pre-placed cell locations, etc. A scoring system is used to represent the cell quality. A cell design flow is used to incorporate the quality checking process, including providing feedback regarding the QoR of the cell so that the cell design quality can ensured prior to release. Further aspects relate to using results of the quality checking process to refine and optimize the standard cell design. Such processes can reduce the cell design turnaround time between design and implementation of cells. Moreover, the standard cell designs can be further optimized for items such as the PPA once the cells have been optimized and pass the validation process.
In some embodiments, one or more of the operations and/or functionality of the tools and/or systems described herein are implemented by specifically configured hardware (e.g., by one or more application specific integrated circuits or ASIC(s)) which are included) separate from or in lieu of the processor 101. Some embodiments incorporate more than one of the described operations and/or functionality in a single ASIC.
In some embodiments, the operations and/or functionality are realized as functions of a program stored in a non-transitory computer readable recording medium such as the storage 110 and/or memory 102. Examples of a non-transitory computer readable recording medium include, but are not limited to, external/removable and/or internal/built-in storage or memory unit, e.g., one or more of an optical disk, such as a DVD, a magnetic disk, such as a hard disk, a semiconductor memory, such as a ROM, a RAM, a memory card, or other suitable non-transitory computer readable recording medium.
The computer system 100 may further include fabrication tools 150 for implementing the processes and/or methods stored in the storage 110, such as fabricating an IC. For instance, a synthesis may be performed on a design in which the behavior and/or functions desired from the design are transformed to a functionally equivalent logic gate-level circuit description by matching the design to standard cells selected from a layout unit library. The synthesis results in a functionally equivalent logic gate-level circuit description, such as a gate-level netlist. Based on the gate-level netlist, a photolithographic mask may be generated that is used to fabricate the integrated circuit by the fabrication tools 150. Further aspects of device fabrication are disclosed in conjunction with
The design house (or design team) 220 generates an IC design layout diagram 222. The IC design layout diagram 222 includes various geometrical patterns, or IC layout diagrams designed for an IC device 260. The geometrical patterns correspond to patterns of metal, oxide, or semiconductor layers that make up the various components of IC device 260 to be fabricated. The various layers combine to form various IC features. For example, a portion of the IC design layout diagram 222 includes various IC features, such as an active region, gate electrode, source and drain, metal lines or vias of an interlayer interconnection, and openings for bonding pads, to be formed in a semiconductor substrate (such as a silicon wafer) and various material layers disposed on the semiconductor substrate. The design house 220 implements a design procedure to form an IC design layout diagram 222. The design procedure includes one or more of logic design, physical design or place and route. The IC design layout diagram 222 is presented in one or more data files having information of the geometrical patterns. For example, IC design layout diagram 222 can be expressed in a GDSII file format or DFII file format.
The mask house 230 includes a data preparation 232 and a mask fabrication 244. The mask house 230 uses the IC design layout diagram 222 to manufacture one or more masks 245 to be used for fabricating the various layers of the IC device 260 according to the IC design layout diagram 222. The mask house 230 performs mask data preparation 232, where the IC design layout diagram 222 is translated into a representative data file (“RDF”). The mask data preparation 232 provides the RDF to the mask fabrication 244. The mask fabrication 244 includes a mask writer. A mask writer converts the RDF to an image on a substrate, such as a mask (reticle) 245 or a semiconductor wafer 253. The design layout diagram 222 is manipulated by the mask data preparation 232 to comply with particular characteristics of the mask writer and/or requirements of the IC fab 250. In
In some embodiments, the mask data preparation 232 includes an optical proximity correction (OPC) which uses lithography enhancement techniques to compensate for image errors, such as those that can arise from diffraction, interference, other process effects and the like. The OPC adjusts the IC design layout diagram 222. In some embodiments, the mask data preparation 232 includes further resolution enhancement techniques (RET), such as off-axis illumination, sub-resolution assist features, phase-shifting masks, other suitable techniques, and the like or combinations thereof. In some embodiments, inverse lithography technology (ILT) is also used, which treats OPC as an inverse imaging problem.
In some embodiments, the mask data preparation 232 includes a mask rule checker (MRC) that checks the IC design layout diagram 222 that has undergone processes in OPC with a set of mask creation rules which contain certain geometric and/or connectivity restrictions to ensure sufficient margins, to account for variability in semiconductor manufacturing processes, and the like. In some embodiments, the MRC modifies the IC design layout diagram 222 to compensate for limitations during the mask fabrication 244, which may undo part of the modifications performed by OPC in order to meet mask creation rules.
In some embodiments, the mask data preparation 232 includes lithography process checking (LPC) that simulates processing that will be implemented by the IC fab 250 to fabricate the IC device 260. LPC simulates this processing based on the IC design layout diagram 222 to create a simulated manufactured device, such as the IC device 260. The processing parameters in LPC simulation can include parameters associated with various processes of the IC manufacturing cycle, parameters associated with tools used for manufacturing the IC, and/or other aspects of the manufacturing process. LPC takes into account various factors, such as aerial image contrast, depth of focus (“DOF”), mask error enhancement factor (“MEEF”), other suitable factors, and the like or combinations thereof. In some embodiments, after a simulated manufactured device has been created by LPC, if the simulated device is not close enough in shape to satisfy design rules, OPC and/or MRC are be repeated to further refine the IC design layout diagram 222.
It should be understood that the above description of mask data preparation 232 has been simplified for the purposes of clarity. In some embodiments, data preparation 232 includes additional features such as a logic operation (LOP) to modify the IC design layout diagram 222 according to manufacturing rules. Additionally, the processes applied to the IC design layout diagram 222 during data preparation 232 may be executed in a variety of different orders.
After the mask data preparation 232 and during the mask fabrication 244, a mask 245 or a group of masks 245 are fabricated based on the modified IC design layout diagram 222. In some embodiments, the mask fabrication 244 includes performing one or more lithographic exposures based on the IC design layout diagram 222. In some embodiments, an electron-beam (e-beam) or a mechanism of multiple e-beams is used to form a pattern on a mask (photomask or reticle) 245 based on the modified IC design layout diagram 222. The mask 245 can be formed in various technologies. In some embodiments, the mask 245 is formed using binary technology. In some embodiments, a mask pattern includes opaque regions and transparent regions. A radiation beam, such as an ultraviolet (UV) beam, used to expose the image sensitive material layer (e.g., photoresist) which has been coated on a wafer, is blocked by the opaque region and transmits through the transparent regions. In one example, a binary mask version of the mask 245 includes a transparent substrate (e.g., fused quartz) and an opaque material (e.g., chromium) coated in the opaque regions of the binary mask. In another example, the mask 245 is formed using a phase shift technology. In a phase shift mask (PSM) version of the mask 245, various features in the pattern formed on the phase shift mask are configured to have proper phase difference to enhance the resolution and imaging quality. In various examples, the phase shift mask can be attenuated PSM or alternating PSM. The mask(s) generated by the mask fabrication 244 is used in a variety of processes. For example, such a mask(s) is used in an ion implantation process to form various doped regions in the semiconductor wafer 253, in an etching process to form various etching regions in the semiconductor wafer 253, and/or in other suitable processes.
The IC fab 250 includes wafer fabrication 252. The IC fab 250 is an IC fabrication business that includes one or more manufacturing facilities for the fabrication of a variety of different IC products. In some embodiments, the IC Fab 250 is a semiconductor foundry. For example, there may be a manufacturing facility for the front end fabrication of a plurality of IC products (FEOL fabrication), while a second manufacturing facility may provide the back end fabrication for the interconnection and packaging of the IC products (BEOL fabrication), and a third manufacturing facility may provide other services for the foundry business.
The IC fab 250 uses mask(s) 245 fabricated by the mask house 230 to fabricate the IC device 260. Thus, the IC fab 250 at least indirectly uses the IC design layout diagram 222 to fabricate the IC device 260. In some embodiments, the semiconductor wafer 253 is fabricated by the IC fab 250 using mask(s) 245 to form the IC device 260. In some embodiments, the IC fabrication includes performing one or more lithographic exposures based at least indirectly on the IC design layout diagram 222. The Semiconductor wafer 253 includes a silicon substrate or other proper substrate having material layers formed thereon. The semiconductor wafer 253 further includes one or more of various doped regions, dielectric features, multilevel interconnects, and the like (formed at subsequent manufacturing steps).
Disclosed embodiments further include an IP or standard cell quality check process 300, which may be implemented by the computer system 100 as part of the design house 220. An example of a first standard cell quality checking process 300a is shown in
The process 300a includes providing standard cell designs at operation 310 along with design environments at operation 312, which may include items such as power distribution (i.e. power-ground “PG) networks, pre-placed cells and cell components, and the like. A cell abstraction operation 314 for spacing quality checking uses the provided cells and design environments provided at operations 310 and 312. The cell abstraction provided at operation 314 is then used in a cell spacing quality checking operation 316, where inter-cell spacing is evaluated. The spacing evaluation provided by operation 316 is input to a cell quality scoring operation 318, where a spacing quality score is calculated, which may be compared to a threshold to determine whether the evaluated cell has passed the quality check.
The various objects of the cell may be arranged along tracks 326 having a pitch 328 defined as the distance between the tracks 326. In some embodiments, the pitch 328 corresponds to a contact poly pitch (CPP) of an IC process. In some embodiments, pitch 328 corresponds to a metal one pitch of an IC process that is the same as a poly pitch of the IC process. In some embodiments, pitch 328 corresponds to a metal one pitch of an IC process that is different from a poly pitch of the IC process. In some embodiments, pitch 328 corresponds to a multiple of a metal one pitch of an IC process.
At stages 314b and 314c, available locations/solutions are marked on the cell c1 according to environment constraints such as PG networks, pre-placed cell locations, etc. Thus, at stage 314b, PG locations 330 are identified on the cell c1, and based on the locations of the physical objects modeled at stage 314a (i.e. shapes 320, electrical interfaces 322, blockages 324) together with the PG locations 330 identified at stage 314b, available locations 332 for the PG network 330 and unavailable locations 334 for the PG network 330 are marked at stage 314c.
The following equation is used in some embodiments to evaluate the cell-to-cell spacing between cell c1 and another cell ci:
In some embodiments, inputs to equation (1) (and other equations disclosed below) are input into a computer memory such as the storage 110 and/or memory 102 of the system 100 illustrated in
If equation (1) is true, s is the feasible cell-to-cell spacing between the cells c1 and c2. The closer the result of equation (1) is to 0, the better the design quality with regard to cell-to-cell spacing. Moreover, this cell spacing quality check process 300a can be used as part of a larger scale quality check process for checking a design including a plurality of standard cells.
It should be noted that dl and dr will change depending on the orientation of the cell.
At operation 318 of
For instance, a standard cell spacing score g for the first cell c1 as it relates to another cell ci can be determined according to equation (2):
The feasible spacing number determined by equation (1) is thus used in equation (2) to determine a spacing quality score for spacing between the first cell c1 and another cell ci.
An overall spacing quality score S can then be determined for the cell c1 as it relates to all of the other cells ci in the design according to equation (3).
In equation (3), the spacing quality scores gi for the cell c1 to n other cells ci is summed and divided by the number n of other cells ci. The overall score S for a particular design, which represents the cell-to-cell spacing quality score for the standard cells of a design, may then compared to a threshold T to determine a quality check pass/fail.
In the process 300b of
In
These design specific environment constraints may be used in the standard cell level spacing quality check process 300a to determine feasible boundary locations for input to equations (1) and (2) disclosed above. If results of the cell spacing quality check process 300a meet a predetermined threshold in operation 366, the cell is released for use in the design. If the threshold is not met in operation 366, the process repeats and the design may be revised and optimized for cell-to-cell spacing. The design with the optimized cell(s) may then be released in operation 368 for IC manufacturing, such as by the fab 250 shown in
In accordance with further aspects, an existing design may be evaluated for cell-to-cell spacing quality to diagnose and improve quality issues for the existing designs.
At operation 392, environment constraints are extracted from the design 410. In
Disclosed embodiments thus disclose processes and systems for checking and evaluating the spacing quality between standard cells based on a design environment. Moreover, such cell-to-cell spacing quality checking may be formed in an objective and automated fashion, using disclosed process flows for standard cell level design checking to insure cell design quality before releasing the design, as well as process flows for cell spacing quality for existing designs or wafers. This facilitates further improvements for factors such PPA for existing designs. This may reduce standard cell design turnaround time and further boost performance (e.g. PPA) by insuring all standard cell designs meet intercell spacing criteria.
In accordance with some disclosed aspects, a method for checking standard cell spacing in a design includes providing a first standard cell. A cell environment of the first standard cell is determined and a first feasible distance between a first boundary of the standard cell and a boundary of a first adjacent cell based on the cell environment is determined. A second feasible distance between a second boundary of the standard cell and a boundary of a second adjacent cell based on the cell environment is determined. A feasible spacing between the first standard cell and a second standard cell is provided, and the feasible spacing is evaluated based on the first feasible distance, the second feasible distance and a cell pitch of the first standard cell. An integrated circuit is fabricated that includes the first standard cell in response on the evaluating.
In accordance with further disclosed aspects, a method for checking standard cell spacing in a design includes providing a first standard cell and providing a plurality of additional standard cells. A plurality of feasible spacings between the first standard cell and the respective plurality of additional standard cells are evaluated, which includes determining a plurality of spacing scores for each of the plurality of feasible spacings and determining an overall spacing score based on the plurality of spacing scores. An integrated circuit is fabricated in response to the overall spacing score.
In accordance with additional disclosed aspects, a system includes a processor and a memory storage accessible by the processor that storing instructions that when executed by the processor perform a method that includes evaluating a feasible spacing between a first standard cell and a second standard cell. The feasible spacing is based on a first feasible distance between a first boundary of the standard cell and a boundary of a first adjacent cell, a second feasible distance between a second boundary of the standard cell and a boundary of a second adjacent cell, and a cell pitch of the first standard cell.
This disclosure outlines various embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.