Strained Layer Avalanche Photodiodes for Long Wavelength Applications

Information

• NSF Award
• 9461759

Owner

• Sensors Unlimited, Inc

• Award Id

  9461759

• Award Effective Date

  5/1/1995 - 29 years ago

• Award Expiration Date

  2/29/1996 - 28 years ago

• Award Amount

  $ 64,328.00

• Award Instrument

  Standard Grant

9461759 Olsen In this SBIR Phase I Sensors Unlimited, Inc. explores the design and optimization of a high-performance avalanche photodiode for the 1.0-1.65 micron spectral region. The innovation uses strained epitaxial layers combined with multiquantum-well (MQW) InGaAsP/InP layers. A strained layer distorts the valence band of the multiplying (gain) region to reduce the field at which ionization occurs. This reduces device operating voltage and would also increase the ratio of hole/electron ionization coefficients (compared to the unstrained case) and thus decrease noise. A strained layer InGaAsP/InP MQW device will be constructed, and ionization coefficients will be measured and compared with the unstrained case. In Phase II, fabrication and optimization of a reliable planar structure for light response out to 1.65 micron are planned to explore the advantages of low voltage, low noise operation, high gain, and high yield.

• Program Officer

  Ritchie B. Coryell

• Min Amd Letter Date

  4/20/1995 - 29 years ago

• Max Amd Letter Date

  4/20/1995 - 29 years ago

• ARRA Amount

• Name

  Sensors Unlimited, Inc

• City

  Princeton

• State

  NJ

• Country

  United States

• Address

  3490 U.S. Route 1, Building 12

• Postal Code

  085405920

• Phone Number

  6095200610

• First Name

  Gregory

• Last Name

  Olsen

• Email Address

  ghosensors@aol.com

• Start Date

  4/20/1995 12:00:00 AM

• Name

  Engineering-Electrical

• Code

  55