"CW Lasing in GaInAsSb/GaSb Buried Channel Laser (T=20.degree. C., .lambda.=2.0 .mu.m)", A. N. Baranov, T. N. Danilova, B. E. Dzhurtanov, A. N. Imenkov, S. G. Konnikov, A. M. Litvak, V. E. Usmanskii, and Yu. P. Yakovlev, Sov. Tech. Phys. Lett. 14(9), Sep. 1988, pp. 727-729. |
"Efficient GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.29 .mu.m", S. J. Eglash and H. K. Choi, Appl. Phys. Lett. 57(13), Sep. 24, 1990, pp. 1292-1293. |
"High-Efficiency High-Power GaInAsSb-AlGaAsSb Double-Heterostructure Lasers Emitting at 2.3 .mu.m", Hong K. Choi and Stephen J. Eglash, IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1555-1559. |
"MBE-Grown InAs/GaInAs Strained-Layer MQW Lasers with GaInAs/AlInAs Modified SCH Structure", Y. Matsushima, H. Kato, and K. Utaka, Proc. GaAs Symp. Karuizawa 1989. |
"1.5.sub.= .lambda..sub.= 1.7 .mu.m Strained Multiquantum Well InGaAs/InGaAsP Diode Lasers", D. P. Bour, R. U. Martinelli, R. E. Enstrom, T. R. Stewart, N. G. DiGiuseppe, F. Z. Hawrylo and D. B. Cooper, Electron. Lett., Jan. 2, 1992, vol. 28, pp. 37-39. |
"Critical layer thickness in strained Ga.sub.1-x In.sub.x As/InP Quantum Wells", H. Temkin, D. G. Gershoni, S. N. G. Chu, J. M. Vandenberg, R. A. Hamm, and M. B. Panish, Appl. Phys. Lett. 55(16), Oct. 16, 1989, pp. 1668-1670. |
"Strained Multiple Quantum Well Lasers Emitting at 1.3 .mu.m Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy", D. Coblentz, T. Tanbun-Ek, R. A. Logan, A. M. Sergent, S. N. G. Chu, and P. S. Davisson, Appl. Phys. Lett. 59 (4), Jul. 22, 1991, pp. 405-407. |
"Properties of AlGaAsSb-GaSb Heterojunction Injection Lasers in the 1.4-1.8 .mu.Wavelength Range", Ya A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, and Ya. F. Friedentkhal, Sov. J. Quantum Electron. 10(1), Jan. 1980, pp. 50-53. |
"InAsPSb/InAs Diode Laser Emitting in the 2-5 .mu.m Range", S. Akiba, Y. Matsushima, T. Iketani, and M. Usami, Electronics Letters, Aug. 18, 1988, vol. 24, No. 17, pp. 1069-1071. |
"Growth of Strained InAs/InPQuantum Wells by Molecular Beam Epitaxy", M. Hopkinson, J. P. R. David, P. A. Claxton, and P. Kightley, Appl. Phys. Lett. 60 (7), Feb. 17, 1992, pp. 841-843. |
"Low Threshold Highly Efficient Strained Quantum Well Lasers at 1-5 Micrometer Wavelength", U. Koren, M. Oron, M. G. Young, B. I. Miller, J. L. De Miguel, G. Raybon, and M. Chien, Electronics Letters, Mar. 29, 1990, vol. 26, No. 7, pp. 465-467. |