Claims
- 1. A photocatalyst for use in photoelectrolysis, photovoltaic, or photocatalytic devices, comprising:
substrate having surface undulations of some depth and pitch semiconductor thin film layer(s) applied to said surface undulations. Where said undulations alter the bandgap of said semiconductor thin film to better match the wavelength(s) in an illuminant, thereby increasing absorption and conversion efficiency of the illuminant by said photocatalyst for use in said devices.
- 2. The photocatalyst in claim 1, where said undulations cause stress in said semiconductor thin film of a level and type sufficient to cause said alteration of bandgap.
- 3. The photocatalyst in claim 2, where said alteration means decreasing, broadening, or otherwise shifting the bandgap to better match said illuminant wavelength(s).
- 4. The photocatalyst in claim 1, where said undulations are substantially cylindrical, hemispherical, or sinusoidal in profile and shape.
- 5. The photocatalyst in claim 1, where said undulations have a pitch that is chosen relative to the illuminant wavelength(s) such that optical absorption in said semiconductor film is increased.
- 6. The photocatalyst in claim 1, where said undulations have a pitch that is chosen relative to the illuminant wavelength(s) such that the illuminant is diffracted into angles in said substrate that cause the illuminant to be waveguided in said substrate for further absorption efficiency.
- 7. The photocatalyst in claim 1, where said semiconductor is titania TiO2, doped titania (nTixOy), or compounds of titania such as SrTiO3.
- 8. The photocatalyst in claim 1, where thin film layer(s) are added between said substrate and said semiconductor layer to promote adhesion, conductivity, and/or additional stress control.
- 9. The photocatalyst in claim 1, where said substrate is polycarbonate.
- 10. The photocatalyst in claim 1, where said substrate is 0.3 mm to 1.2 mm thick.
- 11. The photocatalyst in claim 1, where said undulations are formed in said substrate by injection/compression molding or embossing said substrate with a stamper having the reverse of said undulations.
- 12. A photoelectrolytic cell device for dissociation and production of hydrogen gas from an aqueous solution when illuminated comprising some or all of the following:
working electrode(s) comprising thin layers of adhesion and/or conductivity promoting materials and titania semiconductor photocatalyst sputter coated onto the undulated surface of a polycarbonate substrate(s), housing, aqueous electrolyte, separation membrane, second electrode, bias voltage source, means for collecting, storing, or using said hydrogen gas.
- 13. The photoelectrolytic cell device in claim 12 in which said bias voltage source comprises a photovoltaic cell that is part of said working electrode.
- 14. The photoelectrolytic cell device in claim 12 in which said second electrode is the cathode.
- 15. The photoelectrolytic cell device in claim 12 in which said second electrode is the anode.
- 16. The photoelectrolytic cell device in claim 12 in which said working electrode is further coated on the side opposite the undulations with indium tin oxide (ITO) or other conducting layer such that both working and second electrodes are common to the substrate.
- 17. The photoelectrolytic cell device in claim 12 in which said electrolyte is sulfuric acid of 0.1 molarity (M).
- 18. The photoelectrolytic cell device in claim 12 in which the illumination is solar.
- 19. The photoelectrolytic cell device in claim 12 in which multiple said working electrodes are stacked to increase the total absorption of said illuminant over a given illumination area.
- 20. A method for manufacturing a photocatalytic semiconductor working electrode having a bandgap that is shifted for higher conversion efficiency of an available illuminant for use in photoelectrolytic, photovoltaic, or photocatalytic devices, said method comprising some or all of the following steps:
producing a master having undulations of a given pitch and depth using e-beam lithography, holographic lithography, or laser beam writing producing a stamper tool from said master using nickel replication embossing said undulations into polycarbonate web with said stamper in a roll-to-roll process molding said undulations into polycarbonate substrates with said stamper in an injection/compression molding process. Sputter coating the undulating side of said polycarbonate substrate in a vacuum chamber with ITO, gold, titanium, or other thin films to promote adhesion and conductivity. Sputter coating the undulating side of said polycarbonate with a photocatalyst semiconductor such as titania, doped titania, or compounds of titania. Sputter coating the flat side of said polycarbonate substrate with a transparent conductive film such as ITO or thin gold to form the second electrode.
- 21. The manufacturing method in claim 20 in which said the parameters of said sputter coating process, including deposition rate, substrate temperature, and vacuum level, are tuned to optimize the stress-induced bandgap shift in said photocatalytic semiconductor film.
- 22. The manufacturing method in claim 20 in which the thickness of said photocatalytic semiconductor thin film is typically 210 nm.
- 23. The manufacturing method in claim 20 in which said undulations are sinusoidal with a pitch of 370 nm and a depth of 180 nm.
- 24. A stress-induced bandgap-shifted semiconductor thin film on a substrate for more efficient photoelectrolysis, photocatalysis, and photovoltaic devices.
- 25. The stress-induced bandgap-shifted semiconductor in claim 24, where said stress is induced by some or all of the following means:
controlling the thickness of said semiconductor thin film, tuning the film coating parameters to optimize stress, forming nanoscale undulations in the substrate to cause local high-stress bending radii, controlling the pitch and depth of said undulations, controlling the mismatch in Young's modulus between the coating and the substrate, inducing photon stress by self-focusing of the illumination, inducing electron stress by adding a layer such as gold in contact with the semiconductor and in between the semiconductor and the substrate.
- 26. The stress-induced bandgap-shifted semiconductor in claim 24, where said semiconductor includes titania, compounds of titania, and doped titania.
- 27. The stress-induced bandgap-shifted semiconductor in claim 24, where said bandgap is shifted to lower values, or is broadened, or is otherwise tuned for most efficient matched absorption of the available illuminant wavelength(s).
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This utility patent application is the non-provisional form of provisional patent application No. 60/380,169, of the same title and inventor name, filed on May 7, 2002.
FEDERALLY SPONSORED R&D STATEMENT
[0002] Invention and development of this technology was self-funded by the inventor until Jan. 10, 2003, at which point additional development finding was received from N.A.S.A. in the form of a Phase 1 S.B.I.R. award that continues to July 10.
Provisional Applications (1)
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Number |
Date |
Country |
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60380169 |
May 2002 |
US |