Structural and low-frequency non-uniformity compensation

Information

  • Patent Grant
  • 10380944
  • Patent Number
    10,380,944
  • Date Filed
    Friday, August 24, 2018
    7 years ago
  • Date Issued
    Tuesday, August 13, 2019
    6 years ago
Abstract
A system for compensating for non-uniformities in an array of solid state devices in a display panel displays images in the panel, and extracts the outputs of a pattern based on structural non-uniformities of the panel, across the panel, for each area of the structural non-uniformities. Then the structural non-uniformities are quantified, based on the values of the extracted outputs, and input signals to the display panel are modified to compensate for the structural non-uniformities. Random non-uniformities are compensated by extracting low-frequency non-uniformities across the panel by applying patterns, and taking images of the pattern. The area and resolution of the image are adjusted to match the panel by creating values for pixels in the display, and then low-frequency non-uniformities across the panel are compensated, based on the created values.
Description
FIELD OF THE INVENTION

The present disclosure generally relates to displays such as active matrix organic light emitting diode displays that monitor the values of selected parameters of the display and compensate for non-uniformities in the display.


BACKGROUND

Displays can be created from an array of light emitting devices each controlled by individual circuits (i.e., pixel circuits) having transistors for selectively controlling the circuits to be programmed with display information and to emit light according to the display information. Thin film transistors (“TFTs”) fabricated on a substrate can be incorporated into such displays. TFTs tend to demonstrate non-uniform behavior across display panels and over time as the displays age. Compensation techniques can be applied to such displays to achieve image uniformity across the displays and to account for degradation in the displays as the displays age.


Some schemes for providing compensation to displays to account for variations across the display panel and over time utilize monitoring systems to measure time dependent parameters associated with the aging (i.e., degradation) and/or fabrication of the pixel circuits. The measured information can then be used to inform subsequent programming of the pixel circuits so as to ensure that any measured degradation is accounted for by adjustments made to the programming. Such monitored pixel circuits may require the use of additional transistors and/or lines to selectively couple the pixel circuits to the monitoring systems and provide for reading out information. The incorporation of additional transistors and/or lines may undesirably decrease pixel-pitch (i.e., “pixel density”).


SUMMARY

In accordance with one embodiment, a system is provided for compensating for structural non-uniformities in an array of solid state devices in a display panel. The system displays images in the panel, and extracts the outputs of a pattern based on structural non-uniformities of the panel, across the panel, for each area of the structural non-uniformities. Then the non-uniformities are quantified, based on the values of the extracted outputs, and input signals to the display panel are modified to compensate for the non-uniformities.


In one implementation, the extracting is done with image sensors, such as optical sensors, associated with a pattern matching the structural non-uniformities. The non-uniformities may be modified at multiple response points by modifying the input signals, and the response points may be used to interpolate an entire response curve for the display panel. The response curve can then be used to create a compensated image.


In another implementation, black values are inserted for selected areas of said pattern to reduce the effect of optical cross talk.


In accordance with another embodiment, a system is provided for compensating for random non-uniformities in an array of solid state devices in a display panel. The system extracts low-frequency non-uniformities across the panel by applying patterns, and takes images of the pattern. The area and resolution of the image are adjusted to match the panel by creating values for pixels in the display, and then low-frequency non-uniformities across the panel are compensated, based on the created values.


In accordance with a further embodiment, a system is provided for compensating for non-uniformities in an array of solid state devices in a display panel. The system creates target points in the input-output characteristics of the panel, extracts structural non-uniformities by optical measurement using patterns matching the structural non-uniformities, compensates for the structural non-uniformities, extracts low-frequency non-uniformities by applying flat field and extracting the patterns, and compensates for the low-frequency non-uniformities.


The foregoing and additional aspects and embodiments of the present invention will be apparent to those of ordinary skill in the art in view of the detailed description of various embodiments and/or aspects, which is made with reference to the drawings, a brief description of which is provided next.





BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages of the invention will become apparent upon reading the following detailed description and upon reference to the drawings.



FIG. 1 is a block diagram of an exemplary configuration of a system for driving an OLED display while monitoring the degradation of the individual pixels and providing compensation therefor.



FIG. 2A is a circuit diagram of an exemplary pixel circuit configuration.



FIG. 2B is a timing diagram of first exemplary operation cycles for the pixel shown in FIG. 2A.



FIG. 2C is a timing diagram of second exemplary operation cycles for the pixel shown in FIG. 2A.



FIG. 3 is a circuit diagram of another exemplary pixel circuit configuration.



FIG. 4 is a block diagram of a modified configuration of a system for driving an OLED display using a shared readout circuit, while monitoring the degradation of the individual pixels and providing compensation therefor.



FIG. 5 is an example of measurements taken by two different readout circuits from adjacent groups of pixels in the same row.



FIG. 6 is a sectional view of an active matrix display that includes integrated solar cell and semi-transparent OLED layers.



FIG. 7 is a plot of current efficiency vs. current density for the integrated device of FIG. 6 and a reference device.



FIG. 8 is a plot of current efficiency vs. voltage for the integrated device of FIG. 6 with the solar cell in a dark environment, under illumination of the OLED layer, and under illumination of both the OLED layer and ambient light.



FIG. 9 is a diagrammatic illustration of the integrated device of FIG. 6 operating as an optical-based touch screen.



FIG. 10 is a plot of current efficiency vs. voltage for the integrated device of FIG. 6 with the solar cell in a dark environment, under illumination of the OLED layer with and without touch.



FIG. 11A is an image of an AMOLED panel without compensation.



FIG. 11B is an image of an AMOLED panel with in-pixel compensation.



FIG. 11C is an image of an AMOLED panel with extra external calibration.



FIG. 12 is a flow chart of a structural and low-frequency compensation process.





While the invention is susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed. Rather, the invention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.


DETAILED DESCRIPTION


FIG. 1 is a diagram of an exemplary display system 50. The display system 50 includes an address driver 8, a data driver 4, a controller 2, a memory 6, a supply voltage 14, and a display panel 20. The display panel 20 includes an array of pixels 10 arranged in rows and columns. Each of the pixels 10 is individually programmable to emit light with individually programmable luminance values. The controller 2 receives digital data indicative of information to be displayed on the display panel 20. The controller 2 sends signals 32 to the data driver 4 and scheduling signals 34 to the address driver 8 to drive the pixels 10 in the display panel 20 to display the information indicated. The plurality of pixels 10 associated with the display panel 20 thus comprise a display array (“display screen”) adapted to dynamically display information according to the input digital data received by the controller 2. The display screen can display, for example, video information from a stream of video data received by the controller 2. The supply voltage 14 can provide a constant power voltage or can be an adjustable voltage supply that is controlled by signals from the controller 2. The display system 50 can also incorporate features from a current source or sink (not shown) to provide biasing currents to the pixels 10 in the display panel 20 to thereby decrease programming time for the pixels 10.


For illustrative purposes, the display system 50 in FIG. 1 is illustrated with only four pixels 10 in the display panel 20. It is understood that the display system 50 can be implemented with a display screen that includes an array of similar pixels, such as the pixels 10, and that the display screen is not limited to a particular number of rows and columns of pixels. For example, the display system 50 can be implemented with a display screen with a number of rows and columns of pixels commonly available in displays for mobile devices, monitor-based devices, and/or projection-devices.


Each pixel 10 includes a driving circuit (“pixel circuit”) that generally includes a driving transistor and a light emitting device. Hereinafter the pixel 10 may refer to the pixel circuit. The light emitting device can optionally be an organic light emitting diode (OLED), but implementations of the present disclosure apply to pixel circuits having other electroluminescence devices, including current-driven light emitting devices. The driving transistor in the pixel 10 can optionally be an n-type or p-type amorphous silicon thin-film transistor, but implementations of the present disclosure are not limited to pixel circuits having a particular polarity of transistor or only to pixel circuits having thin-film transistors. The pixel circuit can also include a storage capacitor for storing programming information and allowing the pixel circuit to drive the light emitting device after being addressed. Thus, the display panel 20 can be an active matrix display array.


As illustrated in FIG. 1, the pixel 10 illustrated as the top-left pixel in the display panel 20 is coupled to a select line 24i, a supply line 26i, a data line 22j, and a monitor line 28j. A read line may also be included for controlling connections to the monitor line. In one implementation, the supply voltage 14 can also provide a second supply line to the pixel 10. For example, each pixel can be coupled to a first supply line 26 charged with Vdd and a second supply line 27 coupled with Vss, and the pixel circuits 10 can be situated between the first and second supply lines to facilitate driving current between the two supply lines during an emission phase of the pixel circuit. The top-left pixel 10 in the display panel 20 can correspond to a pixel in the display panel in a “ith” row and “jth” column of the display panel 20. Similarly, the top-right pixel 10 in the display panel 20 represents a “jth” row and “mth” column; the bottom-left pixel 10 represents an “nth” row and “jth” column; and the bottom-right pixel 10 represents an “nth” row and “mth” column. Each of the pixels 10 is coupled to appropriate select lines (e.g., the select lines 24i and 24n), supply lines (e.g., the supply lines 26i and 26n), data lines (e.g., the data lines 22j and 22m), and monitor lines (e.g., the monitor lines 28j and 28m). It is noted that aspects of the present disclosure apply to pixels having additional connections, such as connections to additional select lines, and to pixels having fewer connections, such as pixels lacking a connection to a monitoring line.


With reference to the top-left pixel 10 shown in the display panel 20, the select line 24i is provided by the address driver 8, and can be utilized to enable, for example, a programming operation of the pixel 10 by activating a switch or transistor to allow the data line 22j to program the pixel 10. The data line 22j conveys programming information from the data driver 4 to the pixel 10. For example, the data line 22j can be utilized to apply a programming voltage or a programming current to the pixel 10 in order to program the pixel 10 to emit a desired amount of luminance. The programming voltage (or programming current) supplied by the data driver 4 via the data line 22j is a voltage (or current) appropriate to cause the pixel 10 to emit light with a desired amount of luminance according to the digital data received by the controller 2. The programming voltage (or programming current) can be applied to the pixel 10 during a programming operation of the pixel 10 so as to charge a storage device within the pixel 10, such as a storage capacitor, thereby enabling the pixel 10 to emit light with the desired amount of luminance during an emission operation following the programming operation. For example, the storage device in the pixel 10 can be charged during a programming operation to apply a voltage to one or more of a gate or a source terminal of the driving transistor during the emission operation, thereby causing the driving transistor to convey the driving current through the light emitting device according to the voltage stored on the storage device.


Generally, in the pixel 10, the driving current that is conveyed through the light emitting device by the driving transistor during the emission operation of the pixel 10 is a current that is supplied by the first supply line 26i and is drained to a second supply line 27i. The first supply line 26i and the second supply line 27i are coupled to the supply voltage 14. The first supply line 26i can provide a positive supply voltage (e.g., the voltage commonly referred to in circuit design as “Vdd”) and the second supply line 27i can provide a negative supply voltage (e.g., the voltage commonly referred to in circuit design as “Vss”). Implementations of the present disclosure can be realized where one or the other of the supply lines (e.g., the supply line 27i) is fixed at a ground voltage or at another reference voltage.


The display system 50 also includes a monitoring system 12. With reference again to the top left pixel 10 in the display panel 20, the monitor line 28j connects the pixel 10 to the monitoring system 12. The monitoring system 12 can be integrated with the data driver 4, or can be a separate stand-alone system. In particular, the monitoring system 12 can optionally be implemented by monitoring the current and/or voltage of the data line 22j during a monitoring operation of the pixel 10, and the monitor line 28j can be entirely omitted. Additionally, the display system 50 can be implemented without the monitoring system 12 or the monitor line 28j. The monitor line 28j allows the monitoring system 12 to measure a current or voltage associated with the pixel 10 and thereby extract information indicative of a degradation of the pixel 10. For example, the monitoring system 12 can extract, via the monitor line 28j, a current flowing through the driving transistor within the pixel 10 and thereby determine, based on the measured current and based on the voltages applied to the driving transistor during the measurement, a threshold voltage of the driving transistor or a shift thereof.


The monitoring system 12 can also extract an operating voltage of the light emitting device (e.g., a voltage drop across the light emitting device while the light emitting device is operating to emit light). The monitoring system 12 can then communicate signals 32 to the controller 2 and/or the memory 6 to allow the display system 50 to store the extracted degradation information in the memory 6. During subsequent programming and/or emission operations of the pixel 10, the degradation information is retrieved from the memory 6 by the controller 2 via memory signals 36, and the controller 2 then compensates for the extracted degradation information in subsequent programming and/or emission operations of the pixel 10. For example, once the degradation information is extracted, the programming information conveyed to the pixel 10 via the data line 22j can be appropriately adjusted during a subsequent programming operation of the pixel 10 such that the pixel 10 emits light with a desired amount of luminance that is independent of the degradation of the pixel 10. In an example, an increase in the threshold voltage of the driving transistor within the pixel 10 can be compensated for by appropriately increasing the programming voltage applied to the pixel 10.



FIG. 2A is a circuit diagram of an exemplary driving circuit for a pixel 110. The driving circuit shown in FIG. 2A is utilized to calibrate, program and drive the pixel 110 and includes a drive transistor 112 for conveying a driving current through an organic light emitting diode (OLED) 114. The OLED 114 emits light according to the current passing through the OLED 114, and can be replaced by any current-driven light emitting device. The OLED 114 has an inherent capacitance COLED. The pixel 110 can be utilized in the display panel 20 of the display system 50 described in connection with FIG. 1.


The driving circuit for the pixel 110 also includes a storage capacitor 116 and a switching transistor 118. The pixel 110 is coupled to a select line SEL, a voltage supply line Vdd, a data line Vdata, and a monitor line MON. The driving transistor 112 draws a current from the voltage supply line Vdd according to a gate-source voltage (Vgs) across the gate and source terminals of the drive transistor 112. For example, in a saturation mode of the drive transistor 112, the current passing through the drive transistor 112 can be given by Ids=β (Vgs−Vt)2, where β is a parameter that depends on device characteristics of the drive transistor 112, Ids is the current from the drain terminal to the source terminal of the drive transistor 112, and Vt is the threshold voltage of the drive transistor 112.


In the pixel 110, the storage capacitor 116 is coupled across the gate and source terminals of the drive transistor 112. The storage capacitor 116 has a first terminal, which is referred to for convenience as a gate-side terminal, and a second terminal, which is referred to for convenience as a source-side terminal. The gate-side terminal of the storage capacitor 116 is electrically coupled to the gate terminal of the drive transistor 112. The source-side terminal 116s of the storage capacitor 116 is electrically coupled to the source terminal of the drive transistor 112. Thus, the gate-source voltage Vgs of the drive transistor 112 is also the voltage charged on the storage capacitor 116. As will be explained further below, the storage capacitor 116 can thereby maintain a driving voltage across the drive transistor 112 during an emission phase of the pixel 110.


The drain terminal of the drive transistor 112 is connected to the voltage supply line Vdd, and the source terminal of the drive transistor 112 is connected to (1) the anode terminal of the OLED 114 and (2) a monitor line MON via a read transistor 119. A cathode terminal of the OLED 114 can be connected to ground or can optionally be connected to a second voltage supply line, such as the supply line Vss shown in FIG. 1. Thus, the OLED 114 is connected in series with the current path of the drive transistor 112. The OLED 114 emits light according to the magnitude of the current passing through the OLED 114, once a voltage drop across the anode and cathode terminals of the OLED achieves an operating voltage (VOLED) of the OLED 114. That is, when the difference between the voltage on the anode terminal and the voltage on the cathode terminal is greater than the operating voltage VOLED, the OLED 114 turns on and emits light. When the anode-to-cathode voltage is less than VOLED, current does not pass through the OLED 114.


The switching transistor 118 is operated according to the select line SEL (e.g., when the voltage on the select line SEL is at a high level, the switching transistor 118 is turned on, and when the voltage SEL is at a low level, the switching transistor is turned off). When turned on, the switching transistor 118 electrically couples node A (the gate terminal of the driving transistor 112 and the gate-side terminal of the storage capacitor 116) to the data line Vdata.


The read transistor 119 is operated according to the read line RD (e.g., when the voltage on the read line RD is at a high level, the read transistor 119 is turned on, and when the voltage RD is at a low level, the read transistor 119 is turned off). When turned on, the read transistor 119 electrically couples node B (the source terminal of the driving transistor 112, the source-side terminal of the storage capacitor 116, and the anode of the OLED 114) to the monitor line MON.



FIG. 2B is a timing diagram of exemplary operation cycles for the pixel 110 shown in FIG. 2A. During a first cycle 150, both the SEL line and the RD line are high, so the corresponding transistors 118 and 119 are turned on. The switching transistor 118 applies a voltage Vd1, which is at a level sufficient to turn on the drive transistor 112, from the data line Vdata to node A. The read transistor 119 applies a monitor-line voltage Vb, which is at a level that turns the OLED 114 off, from the monitor line MON to node B. As a result, the gate-source voltage Vgs is independent of VOLED (Vd1−Vb−Vds3, where Vds3 is the voltage drop across the read transistor 119). The SEL and RD lines go low at the end of the cycle 150, turning off the transistors 118 and 119.


During the second cycle 154, the SEL line is low to turn off the switching transistor 118, and the drive transistor 112 is turned on by the charge on the capacitor 116 at node A. The voltage on the read line RD goes high to turn on the read transistor 119 and thereby permit a first sample of the drive transistor current to be taken via the monitor line MON, while the OLED 114 is off. The voltage on the monitor line MON is Vref, which may be at the same level as the voltage Vb in the previous cycle.


During the third cycle 158, the voltage on the select line SEL is high to turn on the switching transistor 118, and the voltage on the read line RD is low to turn off the read transistor 119. Thus, the gate of the drive transistor 112 is charged to the voltage Vd2 of the data line Vdata, and the source of the drive transistor 112 is set to VOLED by the OLED 114. Consequently, the gate-source voltage Vgs of the drive transistor 112 is a function of VOLED (Vgs=Vd2−VOLED).


During the fourth cycle 162, the voltage on the select line SEL is low to turn off the switching transistor, and the drive transistor 112 is turned on by the charge on the capacitor 116 at node A. The voltage on the read line RD is high to turn on the read transistor 119, and a second sample of the current of the drive transistor 112 is taken via the monitor line MON.


If the first and second samples of the drive current are not the same, the voltage Vd2 on the Vdata line is adjusted, the programming voltage Vd2 is changed, and the sampling and adjustment operations are repeated until the second sample of the drive current is the same as the first sample. When the two samples of the drive current are the same, the two gate-source voltages should also be the same, which means that:










V
OLED

=




Vd





2

-
Vgs







=




Vd





2

-

(


Vd





1

-
Vb
-

Vds





3


)








=




Vd





2

-

Vd





1

+
Vb
+

Vds





3.









After some operation time (t), the change in VOLED between time 0 and time t is ΔVOLED=VOLED(t)−VOLED(0)=Vd2(t)−Vd2(0). Thus, the difference between the two programming voltages Vd2(t) and Vd2(0) can be used to extract the OLED voltage.



FIG. 2C is a modified schematic timing diagram of another set of exemplary operation cycles for the pixel 110 shown in FIG. 2A, for taking only a single reading of the drive current and comparing that value with a known reference value. For example, the reference value can be the desired value of the drive current derived by the controller to compensate for degradation of the drive transistor 112 as it ages. The OLED voltage VOLED can be extracted by measuring the difference between the pixel currents when the pixel is programmed with fixed voltages in both methods (being affected by VOLED and not being affected by VOLED). This difference and the current-voltage characteristics of the pixel can then be used to extract VOLED.


During the first cycle 200 of the exemplary timing diagram in FIG. 2C, the select line SEL is high to turn on the switching transistor 118, and the read line RD is low to turn off the read transistor 118. The data line Vdata supplies a voltage Vd2 to node A via the switching transistor 118. During the second cycle 201, SEL is low to turn off the switching transistor 118, and RD is high to turn on the read transistor 119. The monitor line MON supplies a voltage Vref to the node B via the read transistor 118, while a reading of the value of the drive current is taken via the read transistor 119 and the monitor line MON. This read value is compared with the known reference value of the drive current and, if the read value and the reference value of the drive current are different, the cycles 200 and 201 are repeated using an adjusted value of the voltage Vd2. This process is repeated until the read value and the reference value of the drive current are substantially the same, and then the adjusted value of Vd2 can be used to determine VOLED.



FIG. 3 is a circuit diagram of two of the pixels 110a and 110b like those shown in FIG. 2A but modified to share a common monitor line MON, while still permitting independent measurement of the driving current and OLED voltage separately for each pixel. The two pixels 110a and 110b are in the same row but in different columns, and the two columns share the same monitor line MON. Only the pixel selected for measurement is programmed with valid voltages, while the other pixel is programmed to turn off the drive transistor 12 during the measurement cycle. Thus, the drive transistor of one pixel will have no effect on the current measurement in the other pixel.



FIG. 4 illustrates a drive system that utilizes a readout circuit (ROC) 300 that is shared by multiple columns of pixels while still permitting the measurement of the driving current and OLED voltage independently for each of the individual pixels 10. Although only four columns are illustrated in FIG. 4, it will be understood that a typical display contains a much larger number of columns. Multiple readout circuits can be utilized, with each readout circuit sharing multiple columns, so that the number of readout circuits is significantly less than the number of columns. Only the pixel selected for measurement at any given time is programmed with valid voltages, while all the other pixels sharing the same gate signals are programmed with voltages that cause the respective drive transistors to be off. Consequently, the drive transistors of the other pixels will have no effect on the current measurement being taken of the selected pixel. Also, when the driving current in the selected pixel is used to measure the OLED voltage, the measurement of the OLED voltage is also independent of the drive transistors of the other pixels.


When multiple readout circuits are used, multiple levels of calibration can be used to make the readout circuits identical. However, there are often remaining non-uniformities among the readout circuits that measure multiple columns, and these non-uniformities can cause steps in the measured data across any given row. One example of such a step is illustrated in FIG. 5 where the measurements 1a-1j for columns 1-10 are taken by a first readout circuit, and the measurements 2a-2j for columns 11-20 are taken by a second readout circuit. It can be seen that there is a significant step between the measurements 1j and 2a for the adjacent columns 10 and 11, which are taken by different readout circuits. To adjust this non-uniformity between the last of a first group of measurements made in a selected row by the first readout circuit, and the first of an adjacent second group of measurements made in the same row by the second readout circuit, an edge adjustment can be made by processing the measurements in a controller coupled to the readout circuits and programmed to:

    • (1) determine a curve fit for the values of the parameter(s) measured by the first readout circuit (e.g., values 1a-1j in FIG. 5),
    • (2) determine a first value 2a′ of the parameter(s) of the first pixel in the second group from the curve fit for the values measured by the first readout circuit,
    • (3) determine a second value 2a of the parameter(s) measured for the first pixel in the second group from the values measured by the second readout circuit,
    • (4) determine the difference (2a′-2a), or “delta value,” between the first and second values for the first pixel in the second group, and
    • (5) adjust the values of the remaining parameter(s) 2b-2j measured for the second group of pixels by the second readout circuit, based on the difference between the first and second values for the first pixel in the second group.


      This process is repeated for each pair of adjacent pixel groups measured by different readout circuits in the same row.


The above adjustment technique can be executed on each row independently, or an average row may be created based on a selected number of rows. Then the delta values are calculated based on the average row, and all the rows are adjusted based on the delta values for the average row.


Another technique is to design the panel in a way that the boundary columns between two readout circuits can be measured with both readout circuits. Then the pixel values in each readout circuit can be adjusted based on the difference between the values measured for the boundary columns, by the two readout circuits.


If the variations are not too great, a general curve fitting (or low pass filter) can be used to smooth the rows and then the pixels can be adjusted based on the difference between real rows and the created curve. This process can be executed for all rows based on an average row, or for each row independently as described above.


The readout circuits can be corrected externally by using a single reference source (or calibrated sources) to adjust each ROC before the measurement. The reference source can be an outside current source or one or more pixels calibrated externally. Another option is to measure a few sample pixels coupled to each readout circuit with a single measurement readout circuit, and then adjust all the readout circuits based on the difference between the original measurement and the measured values made by the single measurement readout circuit.



FIG. 6 illustrates a display system that includes a semi-transparent OLED layer 10 integrated with a solar panel 11 separated from the OLED layer 10 by an air gap 12. The OLED layer 10 includes multiple pixels arranged in an X-Y matrix that is combined with programming, driving and control lines connected to the different rows and columns of the pixels. A peripheral sealant 13 (e.g., epoxy) holds the two layers 10 and 11 in the desired positions relative to each other. The OLED layer 210 has a glass substrate 214, the solar panel 11 has a glass cover 15, and the sealant 13 is bonded to the opposed surfaces of the substrate 14 and the cover 15 to form an integrated structure.


The OLED layer 210 includes a substantially transparent anode 220, e.g., indium-tin-oxide (ITO), adjacent the glass substrate 214, an organic semiconductor stack 221 engaging the rear surface of the anode 220, and a cathode 222 engaging the rear surface of the stack 221. The cathode 222 is made of a transparent or semi-transparent material, e.g., thin silver (Ag), to allow light to pass through the OLED layer 210 to the solar panel 211. (The anode 220 and the semiconductor stack 221 in OLEDs are typically at least semi-transparent, but the cathode in previous OLEDs has often been opaque and sometimes even light-absorbing to minimize the reflection of ambient light from the OLED.)


Light that passes rearwardly through the OLED layer 210, as illustrated by the right-hand arrow in FIG. 6, continues on through the air gap 212 and the cover glass cover 215 of the solar cell 211 to the junction between n-type and p-type semiconductor layers 230 and 231 in the solar cell. Optical energy passing through the glass cover 215 is converted to electrical energy by the semiconductor layers 230 and 231, producing an output voltage across a pair of output terminals 232 and 233. The various materials that can be used in the layers 230 and 231 to convert light to electrical energy, as well as the material dimensions, are well known in the solar cell industry. The positive output terminal 232 is connected to the n-type semiconductor layer 230 (e.g., copper phthalocyanine) by front electrodes 234 attached to the front surface of the layer 230. The negative output terminal 233 is connected to the p-type semiconductor layer 231 (e.g., 3, 4, 9, 10-perylenetetracarboxylic bis-benzimidazole) by rear electrodes 235 attached to the rear surface of the layer 231.


One or more switches may be connected to the terminals 232 and 233 to permit the solar panel 211 to be controllably connected to either (1) an electrical energy storage device such as a rechargeable battery or one or more capacitors, or (2) to a system that uses the solar panel 211 as a touch screen, to detect when and where the front of the display is “touched” by a user.


In the illustrative embodiment of FIG. 6, the solar panel 211 is used to form part of the encapsulation of the OLED layer 210 by forming the rear wall of the encapsulation for the entire display. Specifically, the cover glass 215 of the solar cell array forms the rear wall of the encapsulation for the OLED layer 210, the single glass substrate 214 forms the front wall, and the perimeter sealant 213 forms the side walls.


One example of a suitable semitransparent OLED layer 210 includes the following materials:


Anode 220

    • ITO (100 nm)


Semiconductor Stack 221

    • hole transport layer—N,N′-bis(naphthalen-1-yl)-N,N′-bis (phenyl)benzidine (NBP) (70 nm)
    • emitter layer—tris(8-hydroxyquinoline) aluminum (Alq3): 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H, [l] benzo-pyrano [6,7,8-ij] quinolizin-11-one (C545T) (99%:1%) (30 nm)
    • electron transport layer—Alq3 (40 nm)
    • electron injection layer—4,7-diphenyl-1,10-phenanthroline (Bphen): (Cs2CO3) (9:1) (10 nm)


Semitransparent Cathode 222

    • MoO3:NPB(1:1) (20 nm)
    • Ag (14 nm)
    • MoO3:NPB(1:1) (20 nm)


The performance of the above OLED layer in an integrated device using a commercial solar panel was compared with a reference device, which was an OLED with exactly the same semiconductor stack and a metallic cathode (Mg/Ag). The reflectance of the reference device was very high, due to the reflection of the metallic electrode; in contrast, the reflectance of the integrated device is very low. The reflectance of the integrated device with the transparent electrode was much lower than the reflectances of both the reference device (with the metallic electrode) and the reference device equipped with a circular polarizer.


The current efficiency-current density characteristics of the integrated device with the transparent electrode and the reference device are shown in FIG. 7. At a current density of 200 A/m2, the integrated device with the transparent electrode had a current efficiency of 5.88 cd/A, which was 82.8% of the current efficiency (7.1 cd/A) of the reference device. The current efficiency of the reference device with a circular polarizer was only 60% of the current efficiency of the reference device. The integrated device converts both the incident ambient light and a portion of the OLED internal luminance into useful electrical energy instead of being wasted.


For both the integrated device and the reference device described above, all materials were deposited sequentially at a rate of 1-3 Å/s using vacuum thermal evaporation at a pressure below 5×10−6 Torr on ITO-coated glass substrates. The substrates were cleaned with acetone and isopropyl alcohol, dried in an oven, and finally cleaned by UV ozone treatment before use. In the integrated device, the solar panel was a commercial Sanyo Energy AM-1456CA amorphous silicon solar cell with a short circuit current of 6 μA and a voltage output of 2.4V. The integrated device was fabricated using the custom cut solar cell as encapsulation glass for the OLED layer.


The optical reflectance of the device was measured by using a Shimadzu UV-2501PC UV-Visible spectrophotometer. The current density (J)-luminance (L)-voltage (V) characteristics of the device was measured with an Agilent 4155C semiconductor parameter analyzer and a silicon photodiode pre-calibrated by a Minolta Chromameter. The ambient light was room light, and the tests were carried out at room temperature. The performances of the fabricated devices were compared with each other and with the reference device equipped with a circular polarizer.



FIG. 8 shows current-voltage (I-V) characteristics of the solar panel (1) in dark, (20 under the illumination of OLED, and (3) under illumination of both ambient light and the OLED at 20 mA/cm2. The dark current of the solar cell shows a nice diode characteristic. When the solar cell is under the illumination of the OLED under 20 mA/cm2 current density, the solar cell shows a short circuit current (Isc) of −0.16 μA, an open circuit voltage (Voc) of 1.6V, and a filling factor (FF) of 0.31. The maximum converted electrical power is 0.08 μW, which demonstrates that the integrated device is capable of recycling a portion of the internal OLED luminance energy. When the solar cell is under the illumination of both ambient light and the overlying OLED, the solar cell shows a short circuit current (Isc) of −7.63 μA, an open circuit voltage (Voc) of 2.79V, and a filling factor (FF) of 0.65. The maximum converted electrical power is 13.8 μW in this case. The increased electrical power comes from the incident ambient light.


Overall, the integrated device shows a higher current efficiency than the reference device with a circular polarizer, and further recycles the energy of the incident ambient light and the internal luminance of the top OLED, which demonstrates a significant low power consumption display system.


Conventional touch displays stack a touch panel on top of an LCD or AMOLED display. The touch panel reduces the luminance output of the display beneath the touch panel and adds extra cost to the fabrication. The integrated device described above is capable of functioning as an optical-based touch screen without any extra panels or cost. Unlike previous optical-based touch screens which require extra IR-LEDs and sensors, the integrated device described here utilizes the internal illumination from the top OLED as an optical signal, and the solar cell is utilized as an optical sensor. Since the OLED has very good luminance uniformity, the emitted light is evenly spread across the device surface as well as the surface of the solar panel. When the front surface of the display is touched by a finger or other object, a portion of the emitted light is reflected off the object back into the device and onto the solar panel, which changes the electrical output of the solar panel. The system is able to detect this change in the electrical output, thereby detecting the touch. The benefit of this optical-based touch system is that it works for any object (dry finger, wet finger, gloved finger, stylus, pen, etc.), because detection of the touch is based on the optical reflection rather than a change in the refractive index, capacitance or resistance of the touch panel.



FIG. 9 is a diagrammatic illustration of the integrated device of FIG. 6 being used as a touch screen. To allow the solar cell to convert a significant amount of light that impinges on the front of the cell, the front electrodes 234 are spaced apart to leave a large amount of open area through which impinging light can pass to the front semiconductor layer 230. The illustrative electrode pattern in FIG. 9 has all the front electrodes 234 extending in the X direction, and all the back contacts 235 extending in the Y direction. Alternatively, one electrode can be patterned in both directions. An additional option is the addition of tall wall traces covered with metal so that they can be connected to the OLED transparent electrode to further reduce the resistance. Another option is to fill the gap 212 between the OLED layer 10 and the cover glass 215 with a transparent material that acts as an optical glue, for better light transmittance.


When the front of the display is touched or obstructed by a finger 240 (FIG. 9) or other object that reflects or otherwise changes the amount of light impinging on the solar panel at a particular location, the resulting change in the electrical output of the solar panel can be detected. The electrodes 234 and 235 are all individually connected to a touch screen controller circuit that monitors the current levels in the individual electrodes, and/or the voltage levels across different pairs of electrodes, and analyzes the location responsible for each change in those current and/or voltage levels. Touch screen controller circuits are well known in the touch-screen industry, and are capable of quickly and accurately reading the exact position of a “touch” that causes a change in the electrode currents and/or voltages being monitored. The touch screen circuits may be active whenever the display is active, or a proximity switch can be sued to activate the touch screen circuits only when the front surface of the display is touched.


The solar panel may also be used for imaging, as well as a touch screen. An algorithm may be used to capture multiple images, using different pixels of the display to provide different levels of brightness for compressive sensing.



FIG. 10 is a plot of normalized current Isc vs. voltage Voc characteristics of the solar panel under the illumination of the overlying OLED layer, with and without touch. When the front of the integrated device is touched, Isc and Voc of the solar cell change from −0.16 μA to −0.87 μA and 1.6 V to 2.46 V, respectively, which allows the system to detect the touch. Since this technology is based on the contrast between the illuminating background and the light reflected by a fingertip, for example, the ambient light has an influence on the touch sensitivity of the system. The changes in Isc or Voc in FIG. 10 are relatively small, but by improving the solar cell efficiency and controlling the amount of background luminance by changing the thickness of the semitransparent cathode of the OLED, the contrast can be further improved. In general, a thinner semitransparent OLED cathode will benefit the luminance efficiency and lower the ambient light reflectance; however, it has a negative influence on the contrast of the touch screen.


In a modified embodiment, the solar panel is calibrated with different OLED and/or ambient brightness levels, and the values are stored in a lookup table (LUT). Touching the surface of the display changes the optical behavior of the stacked structure, and an expected value for each cell can be fetched from the LUT based on the OLED luminance and the ambient light. The output voltage or current from the solar cells can then be read, and a profile created based on differences between expected values and measured values. A predefined library or dictionary can be used to translate the created profile to different gestures or touch functions.


In another modified embodiment, each solar cell unit represents a pixel or sub-pixel, and the solar cells are calibrated as smaller units (pixel resolution) with light sources at different colors. Each solar cell unit may represent a cluster of pixels or sub-pixels. The solar cells are calibrated as smaller units (pixel resolution) with reference light sources at different color and brightness levels, and the values stored in LUTs or used to make functions. The calibration measurements can be repeated during the display lifetime by the user or at defined intervals based on the usage of the display. Calibrating the input video signals with the values stored in the LUTs can compensate for non-uniformity and aging. Different gray scales may be applied while measuring the values of each solar cell unit, and storing the values in a LUT.


Each solar cell unit can represent a pixel or sub-pixel. The solar cell can be calibrated as smaller units (pixel resolution) with reference light sources at different colors and brightness levels and the values stored in LUTs or used to make functions. Different gray scales may be applied while measuring the values of each solar cell unit, and then calibrating the input video signals with the values stored in the LUTs to compensate for non-uniformity and aging. The calibration measurements can be repeated during the display lifetime by the user or at defined intervals based on the usage of the display.


Alternatively, each solar cell unit can represent a pixel or sub-pixel, calibrated as smaller units (pixel resolution) with reference light sources at different colors and brightness levels with the values being stored in LUTs or used to make functions, and then applying different patterns (e.g., created as described in U.S. Patent Application Publication No. 2011/0227964, which is incorporated by reference in its entirety herein) to each cluster and measuring the values of each solar cell unit. The functions and methods described in U.S. Patent Application Publication No. 2011/0227964 may be used to extract the non-uniformities/aging for each pixel in the clusters, with the resulting values being stored in a LUT. The input video signals may then be calibrated with the values stored in LUTs to compensate for non-uniformity and aging. The measurements can be repeated during the display lifetime either by the user or at defined intervals based on display usage.


The solar panel can also be used for initial uniformity calibration of the display. One of the major problems with OLED panels is non-uniformity. Common sources of non-uniformity are the manufacturing process and differential aging during use. While in-pixel compensation can improve the uniformity of a display, the limited compensation level attainable with this technique is not sufficient for some displays, thereby reducing the yield. With the integrated OLED/solar panel, the output current of the solar panel can be used to detect and correct non-uniformities in the display. Specifically, calibrated imaging can be used to determine the luminance of each pixel at various levels. The theory has also been tested on an AMOLED display, and FIG. 11 shows uniformity images of an AMOLED panel (a) without compensation, (b) with in-pixel compensation and (c) with extra external compensation. FIG. 11(c) highlights the effect of external compensation which increases the yield to a significantly higher level (some ripples are due to the interference between camera and display spatial resolution). Here the solar panel was calibrated with an external source first and then the panel was calibrated with the results extracted from the panel.


As can be seen from the foregoing description, the integrated display can be used to provide AMOLED displays with a low ambient light reflectance without employing any extra layers (polarizer), low power consumption with recycled electrical energy, and functionality as an optical based touch screen without an extra touch panel, LED sources or sensors. Moreover, the output of the solar panel can be used to detect and correct the non-uniformity of the OLED panel. By carefully choosing the solar cell and adjusting the semitransparent cathode of the OLED, the performance of this display system can be greatly improved.


Arrayed solid state devices, such as active matrix organic light emitting (AMOLED) displays, are prone to structural and/or random non-uniformity. The structural non-uniformity can be caused by several different sources such as driving components, fabrication procedure, mechanical structure, and more. For example, the routing of signals through the panel may cause different delays and resistive drop. Therefore, it can cause a non-uniformity pattern.


In one example of driver-induced structural non-uniformity, when the select (address lines) are generated by a central source at the edge of the panel and distributed to different columns or rows can experience different delays. Although some can match the delay by adjusting the trace widths by different patterning, the accuracy is limited due to the limited area available for routing.


In another example of driver-induced structural non-uniformity, the measurement units used to extract the pixel non-uniformity will not match accurately. Therefore the measured data can have an offset (or gain) variation across the measurement units


In an example of fabrication-induced structural non-uniformity, the patterning can cause a repeated pattern (especially if step-and-repeat is used. Here a smaller mask is used but it is moved across the substrate to pattern the entire area that has the same pattern).


In another example of fabrication-induced structural non-uniformity, the material development process such as laser annealing can create repeated pattern in orientation of the process.


An example of mechanical structural non-uniformity is the effect of mechanical stress caused by the conformal structure of the device.


Also, the random non-uniformity can consist of low frequency and high frequency patterns. Here, the low frequency patterns are considered as global non-uniformities and the high-frequency patterns are called local non-uniformity.


Invention Overview


Array structure solid state devices such as active matrix OLED (AMOLED) displays are prone to structural non-uniformity caused by drivers, fabrication process, and/or physical conditions. An example for driver structural non-uniformity can be the mismatches between different drivers used in one array device (panel). These drivers could be providing signals to the panels or extracting signals from the panels to be used for compensation. For example, multiple measurement units are used in an AMOLED panel to extract the electrical non-uniformity of the panel. The data is then used to compensate the non-uniformity. The fabrication non-uniformity can be caused by process steps. In one case, the step-and-repeat process in patterning can result in structural non-uniformity across the panel. Also, mechanical stress as the result of packaging can result in structural non-uniformity.


In one embodiment, some images (e.g. flat-field or patterns based on structural non-uniformity) are displayed in the panel; image/optical sensors in association with a pattern matching the structural non-uniformity are used to extract the output of the patterns across the panel for each area of the structural non-uniformity. For example, if the non-uniformities are vertical bands caused by the drivers (or measurement units), a value for each band is extracted. These values are used to quantify the non-uniformities and compensate for them by modifying the input signals.


In another aspect of the invention, some images (e.g. flat-field or patterns based on structural non-uniformity) are displayed on the panel; and image/optical sensors in association with a pattern matching the structural non-uniformity are used to extract the output of the patterns across the panel for each area of the structural non-uniformity. For example, if the non-uniformities are vertical bands caused by the drivers (or measurement units), a value for each band is extracted. These values are used to quantify the non-uniformities and compensate for them at several response points by modifying the input signals. Then use those response points to interpolate (or curve fit) the entire response curve of the pixels. Then the response curve is used to create a compensated image for each input signals.


In another aspect of the invention, one can insert black values (or different values) for some of the areas in the structural pattern to eliminate the optical cross talks.


For example, if the panel has vertical bands, one can replace the odds bands with black and the other one with a desired value. In this case, the effect of cross talk is reduced significantly.


In another example, in case of the structural non-uniformity that is in the shape of 2D (two dimensional) patterns, the checker board approach can be used. Or one area is programmed with the desired value and all the surrounding areas are programmed with different values (e.g., black).


This can be done for any pattern; more than two different values can be used for differentiating the areas in the pattern.


For example, if the patterns are too small (e.g., the vertical or horizontal bands are very narrow or the checker board boxes are very narrow) more than one adjacent area can be programmed with different values (e.g., black).


In another embodiment, low frequency non-uniformities across the panel are extracted by applying the patterns (flat field), images are taken of the panel; the image is corrected to eliminate the non-ideality such as field of view and other factors; and its area and resolution is adjusted to match the panel by creating values for each pixel in the display; and the value is used to compensate the low frequency non-uniformities across the panel.


Under ideal conditions, after compensation (either in-pixel or external compensation) the uniformity should be within expected specifications.


For external compensation, each measurement attained through system yields the voltage (or a current) required to produce a specified output current (or voltage) for each and every sub-pixel. Then these values are used to create a compensated value for the entire panel or for a point in the output response of the display. Thus, after applying the compensated values to create a flat-field, the display should produce a perfectly uniform response. In reality, however, several factors may contribute to a non-perfect response. For instance, a mismatch in calibration between measurement circuits may artificially induce parasitic vertical banding into each measurement. Alternatively, loading effects on the panel coupled with non-idealities in panel layout may introduce darker or brighter horizontal waves known as ‘gate bands.’ In general, these issues are easiest to solve through external, optical correction.


Two applications of optical correction are (1) structural non-uniformity correction and (2) global non-uniformity correction.


Structural Non-Uniformity Caused by Measurement Units


Here the process to fix the structural non-uniformity caused by measurement units is described, but it will be understood that the process can be modified to compensate the other structural non-uniformities.


After the panel is measured at a few different operating points, compensated patterns (e.g., flat-field images) are created based on the measurement.


The optical measurement equipment (e.g., camera) is tuned to the appropriate exposure for maximum variation detection. In the case of vertical (or horizontal) bands two templates can be used. The first template turns off the even bands and the second template turns off the odd band. In this way, regions can be easily detected and the average variation determined for each region. Once the photographs are taken, the average variation is calculated. As mentioned above, each measurement should have a uniform response. Thus, the goal is to apply the following inverse to the entire measurement:







M
corr

=


(

1

(


L
M


avg


(

L
M

)



)


)

*

M
raw







where Mraw is the raw measurement and LM is the optically measured luminance variation.



FIG. 12 is a flow chart of a structural and low-frequency compensation process for a raw display panel. The external measurement path creates target points in the input-output characteristics of the panel. Then structural non-uniformities are extracted by optical measurement using patterns matching the non-uniformities. The measurements are used to compensate for the structural non-uniformities. Low-frequency non-uniformities are extracted by applying flat fields and extracting the patterns, which are used to compensate for the low-frequency non-uniformity. The in-pixel compensation path in FIG. 12 selects target points for compensation, and then follows the same steps described for the external measurement path.


The following is one example of a detailed procedure:


1. Setup the Optical Measurement Device (e.g., Camera)


Adjust the optical measurement device (OMD) to be as straight and level as possible. The internal level on the optical measurement device can be used in conjunction with a level held vertically against the front face of the lens. Fix the position of the OMD.


2. Setup the Panel


The panel should be centered in the frame of the camera. This can be done using guides such as the grid lines in the view finder if available. In one method, physical levels can be used to check that the panel is aligned. Also, a pre-adjusted gantry can be used for the panels. Here, as the panels arrive for measurement, they are aligned with the gantry. The gantry can have some physical marker that the panel can be rest against them or aligned with them. In addition, some alignment patterns shown in the display can be used to align the panel by moving or rotating based on the output of the OMD (which can be the same as the main OMD) and the alignment pattern. Moreover, the measurement image of the alignment patterns can be used to preprocess the actual measurement images taken by the OMD for non-uniformity correction.


3. Photograph the Template Images


Two template files are created, one of which blacks out all the even bands and the other all the odd bands. These are used to create template images for extracting the measurement structural non-uniformity data. These masks can be directly applied to the target compensated images created based on the externally measured data. The resulting files can now be displayed with only the selected sub-pixel (for example white) enabled. Since the bands in this case are all of equal width, the OMD settings should be adjusted such that the pixel width of bright areas is approximately equal to the pixel width of dark areas in the resulting images. One picture is needed of each of the template variations. The same OMD settings should be used for both.


4. Photograph the Curve Fit Points


While the correction data can be extracted directly from the above two images, in another embodiment of the invention implementation, an image of each of the target points in the output response of the display is taken. Here, the target points are compensated first based on the electrically measured data. The same OMD settings and adjustments described in step 2 are used. It was found experimentally that extracting the variance in white and applying it to all colors gave good final results while reducing the number of images and amount of data processing required. The position of the camera and the panel should remain fixed throughout steps 3 and 4.


5. Image Correction


In an effort to produce optimal correction, both the template images and curve-fit points should be corrected for artifacts introduced by the OMD. For instance, image distortion and chromatic aberration are corrected using parameters specified by the OMD and applied using standard methods. As a result, the images attained from the OMD can directly be matched to defects seen in electrically measured data for each curve-fit point.


For template images, boundaries at the edges of mask regions are first de-skewed and then further cropped using a threshold. As a result, each of the resulting edges is smooth, preventing adjacent details in the underlying image from leaking in. For instance, the underlying image to which the mask is being applied may have a bright region adjacent to a dark region. Rough edges on the applied mask may introduce inaccuracy in later stages as the bright region's OMD reading may leak into that of the dark region.


6. Find Image Co-Ordinates


Here, the alignment mark images can be used to identify the image coordinate in relation to display pixels. Since the alignments are shown in known display pixel index, the image can now be cropped to roughly the panel area. This reduces the amount of data processing required in subsequent steps.


7. Generate the Template Image Masks


In this case, the target point images are used to extract non-uniformities; and the two patterned images are used as mask. The rough crop from step 6 can be used to only process the portion of the template image that contains the panel. Where the brightness in those template images is higher than threshold, the pixel is set to 1 (or another value) and where the brightness is lower than threshold it is set to zero. In this case, the pattern images will turn to bands of black and white. These bands can be used to identify the boundaries of bands in the target point images.


8. Apply Generated Templates to Curve-Fit Points


Either using the patterned images or the target point images, a value is created for each band based on the OMD output using a data/image processing tool (e.g.: MATLAB). The measured luminance values for each region is corrected for outliers (typically 2σ-3σ) and averaged.


9. Apply and Tune the Correction Factors


Using the overall panel average and the averages for each band, the created target points can be corrected by scaling each band by a fixed gain for each color and applying it to the original file. The gain required for each color of each level is determined by generating files with a range of gain factors, then displaying them on the panel.


In the case where the electrical measurement value is the grayscale required for each pixel to provide a fixed current, the target point is the measured data, although some correction may be applied to compensate for some of the non-idealities.


Low-Frequency Non-Uniformity Correction


Although low-frequency compensation can be applied to original target points or a raw panel, low-frequency uniformity compensation correction is generally applied once the other structural and high-frequency compensations procedure described above is completed for the panel. The following is one example of a detailed procedure:


1. Photograph the Structural Non-Uniformity Compensated Target Points


For each compensated target points, an image is captured for each of the sub-pixels (or combinations). For two target points, this will result in a total of 8 images. The exposure of OMD is then adjusted such that the histogram peak is approximately around 20%. This value can be different for different OMD devices and settings. To adjust, the target image is displayed with only the one sub-pixel enabled. The same settings are then used to image each of the remaining colors individually for a given level. However, one can use different setting for each sub-pixel.


2. Find the Corner Co-Ordinates


The same process as before can be applied to find the matching coordinate between images and display pixels using alignment marks. Also, if the display has not been moved, the same coordinates from previous setup can be used.


3. Correct the Image


Using the coordinates found in step 2, the image can be adjusted so that the resulting image matches the rectangular resolution of the display. In an effort to produce optimal correction, both the template images and curve-fit points should be corrected for artifacts introduced by the OMD. Image distortion and chromatic aberration are corrected using parameters specified by the OMD and applied using standard methods. If necessary a projective transform or other standard method can be used to square the image. Once square, the resolution can be scaled to match that of the panel. As a result, the images attained from the OMD can directly be matched to defects seen in electrically measured data for each curve-fit point.


4. Apply and Tune the Correction Factors


The images created from step 3 can be used to adjust the target points for global non-uniformity correction. Here, one method is to scale the extracted images and add them to the target points. In another method the extracted image can be scaled by a factor and then the target point images can be scaled by the modified images.


To extract the correction factors in any of the above methods, one can use sensors at few points in the panel and modified the factors till the variation in the reading of the sensors is within the specifications. In another method, one can use visual inspection to come up with correction factors. In both cases, the correction factor can be reused for other panels if the setup and the panel characteristics do not change.


While particular embodiments and applications of the present invention have been illustrated and described, it is to be understood that the invention is not limited to the precise construction and compositions disclosed herein and that various modifications, changes, and variations can be apparent from the foregoing descriptions without departing from the spirit and scope of the invention as defined in the appended claims.

Claims
  • 1. A method of compensating for spatially repeated patterns of structural non-uniformities in an array of solid state devices in a display panel, said method comprising: generating at least one image based on the spatially repeated patterns of the structural non-uniformities of the display panel, each of the at least one images matching one or more of the spatially repeated patterns;displaying the at least one image in the panel;extracting the outputs of the spatially repeated patterns across the panel, for each area of the structural non-uniformities;quantifying the non-uniformities based on the values of the extracted outputs; andmodifying input signals to the display panel to compensate for the non-uniformities.
  • 2. The method of claim 1, in which said extracting is performed with use of the image sensors in spatial association with the spatially repeated patterns of the structural non-uniformities.
  • 3. The method of claim 2, in which said image sensors are optical sensors.
  • 4. The method of claim 1, in which said non-uniformities are modified at multiple response points by modifying said at least one image, and which includes using those response points to interpolate an entire response curve for the display panel, and using said response curve to create a compensated image.
  • 5. The method of claim 1, in which black values are inserted for selected areas of said at least one image to reduce the effect of optical cross talk.
  • 6. A method of compensating for non-uniformities in an array of solid state devices in a display panel, said method comprising: extracting outputs of spatially repeated patterns of structural non-uniformities of the display panel with use of images based on the spatially repeated patterns; andcompensating for the structural non-uniformities with use of values of said extracted outputs.
  • 7. The method of claim 6, further comprising: extracting low-frequency non-uniformities across the panel by applying patterns matching the low-frequency non-uniformities;taking images of the pattern using an array of optical sensors;adjusting the spatial area and spatial resolution of the image to match the panel by creating values for pixels in the display; andcompensating low-frequency non-uniformities across the panel based on said created values.
  • 8. A method of compensating for non-uniformities in an array of solid state devices in a display panel, said method comprising: creating target points in the input-output characteristics of the panel;extracting structural non-uniformities by optical measurement of images based on spatially repeated patterns of the structural non-uniformities of the display; andcompensating for the structural non-uniformities.
  • 9. The method of claim 8, in which extracting is performed with optical sensors in spatial association with spatial patterns matching the spatially repeated patterns of the structural non-uniformities.
  • 10. The method of claim 8, further comprising: extracting low-frequency non-uniformities by applying flat field and extracting the patterns matching the low-frequency non-uniformities, andcompensating for the low-frequency non-uniformities.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 14/255,132, filed Apr. 17, 2014, now allowed, which is a continuation-in-part of and claims priority to U.S. patent application Ser. No. 14/204,209, filed Mar. 11, 2014, Now U.S. Pat. No. 9,324,268, which claims the benefit of U.S. Provisional Application No. 61/787,397, filed Mar. 15, 2013, each of which is hereby incorporated by reference herein in its entirety. U.S. patent application Ser. No. 14/255,132, filed Apr. 17, 2014, is also a continuation-in-part of and claims priority to U.S. patent application Ser. No. 13/689,241, filed Nov. 29, 2012, now U.S. Pat. No. 9,385,169, which claims the benefit of U.S. Provisional Application No. 61/564,634 filed Nov. 29, 2011, each of which is hereby incorporated by reference herein in its entirety.

US Referenced Citations (635)
Number Name Date Kind
3506851 Polkinghorn Apr 1970 A
3774055 Bapat Nov 1973 A
4090096 Nagami May 1978 A
4160934 Kirsch Jul 1979 A
4295091 Ponkala Oct 1981 A
4354162 Wright Oct 1982 A
4943956 Noro Jul 1990 A
4996523 Bell Feb 1991 A
5153420 Hack Oct 1992 A
5198803 Shie Mar 1993 A
5204661 Hack Apr 1993 A
5266515 Robb Nov 1993 A
5489918 Mosier Feb 1996 A
5498880 Lee Mar 1996 A
5557342 Eto Sep 1996 A
5561381 Jenkins Oct 1996 A
5572444 Lentz Nov 1996 A
5589847 Lewis Dec 1996 A
5619033 Weisfield Apr 1997 A
5648276 Hara Jul 1997 A
5670973 Bassetti Sep 1997 A
5684365 Tang Nov 1997 A
5691783 Numao Nov 1997 A
5714968 Ikeda Feb 1998 A
5723950 Wei Mar 1998 A
5744824 Kousai Apr 1998 A
5745660 Kolpatzik Apr 1998 A
5748160 Shieh May 1998 A
5815303 Berlin Sep 1998 A
5870071 Kawahata Feb 1999 A
5874803 Garbuzov Feb 1999 A
5880582 Sawada Mar 1999 A
5903248 Irwin May 1999 A
5917280 Burrows Jun 1999 A
5923794 McGrath Jul 1999 A
5945972 Okumura Aug 1999 A
5949398 Kim Sep 1999 A
5952789 Stewart Sep 1999 A
5952991 Akiyama Sep 1999 A
5982104 Sasaki Nov 1999 A
5990629 Yamada Nov 1999 A
6023259 Howard Feb 2000 A
6069365 Chow May 2000 A
6091203 Kawashima Jul 2000 A
6097360 Holloman Aug 2000 A
6144222 Ho Nov 2000 A
6177915 Beeteson Jan 2001 B1
6229506 Dawson May 2001 B1
6229508 Kane May 2001 B1
6246180 Nishigaki Jun 2001 B1
6252248 Sano Jun 2001 B1
6259424 Kurogane Jul 2001 B1
6262589 Tamukai Jul 2001 B1
6271825 Greene Aug 2001 B1
6288696 Holloman Sep 2001 B1
6304039 Appelberg Oct 2001 B1
6307322 Dawson Oct 2001 B1
6310962 Chung Oct 2001 B1
6320325 Cok Nov 2001 B1
6323631 Juang Nov 2001 B1
6329971 McKnight Dec 2001 B2
6356029 Hunter Mar 2002 B1
6373454 Knapp Apr 2002 B1
6377237 Sojourner Apr 2002 B1
6392617 Gleason May 2002 B1
6404139 Sasaki Jun 2002 B1
6414661 Shen Jul 2002 B1
6417825 Stewart Jul 2002 B1
6433488 Bu Aug 2002 B1
6437106 Stoner Aug 2002 B1
6445369 Yang Sep 2002 B1
6475845 Kimura Nov 2002 B2
6501098 Yamazaki Dec 2002 B2
6501466 Yamagishi Dec 2002 B1
6518962 Kimura Feb 2003 B2
6522315 Ozawa Feb 2003 B2
6525683 Gu Feb 2003 B1
6531827 Kawashima Mar 2003 B2
6541921 Luciano, Jr. Apr 2003 B1
6542138 Shannon Apr 2003 B1
6555420 Yamazaki Apr 2003 B1
6577302 Hunter Jun 2003 B2
6580408 Bae Jun 2003 B1
6580657 Sanford Jun 2003 B2
6583398 Harkin Jun 2003 B2
6583775 Sekiya Jun 2003 B1
6594606 Everitt Jul 2003 B2
6618030 Kane Sep 2003 B2
6639244 Yamazaki Oct 2003 B1
6668645 Gilmour Dec 2003 B1
6677713 Sung Jan 2004 B1
6680580 Sung Jan 2004 B1
6687266 Ma Feb 2004 B1
6690000 Muramatsu Feb 2004 B1
6690344 Takeuchi Feb 2004 B1
6693388 Oomura Feb 2004 B2
6693610 Shannon Feb 2004 B2
6697057 Koyama Feb 2004 B2
6720942 Lee Apr 2004 B2
6724151 Yoo Apr 2004 B2
6734636 Sanford May 2004 B2
6738034 Kaneko May 2004 B2
6738035 Fan May 2004 B1
6753655 Shih Jun 2004 B2
6753834 Mikami Jun 2004 B2
6756741 Li Jun 2004 B2
6756952 Decaux Jun 2004 B1
6756958 Furuhashi Jun 2004 B2
6756985 Hirotsune Jun 2004 B1
6765549 Yamazaki Jul 2004 B1
6771028 Winters Aug 2004 B1
6777712 Sanford Aug 2004 B2
6777888 Kondo Aug 2004 B2
6781306 Park Aug 2004 B2
6781567 Kimura Aug 2004 B2
6806497 Jo Oct 2004 B2
6806638 Lih Oct 2004 B2
6806857 Sempel Oct 2004 B2
6809706 Shimoda Oct 2004 B2
6815975 Nara Nov 2004 B2
6828950 Koyama Dec 2004 B2
6853371 Miyajima Feb 2005 B2
6859193 Yumoto Feb 2005 B1
6873117 Ishizuka Mar 2005 B2
6876346 Anzai Apr 2005 B2
6885356 Hashimoto Apr 2005 B2
6900485 Lee May 2005 B2
6903734 Eu Jun 2005 B2
6909243 Inukai Jun 2005 B2
6909419 Zavracky Jun 2005 B2
6911960 Yokoyama Jun 2005 B1
6911964 Lee Jun 2005 B2
6914448 Jinno Jul 2005 B2
6919871 Kwon Jul 2005 B2
6924602 Komiya Aug 2005 B2
6937215 Lo Aug 2005 B2
6937220 Kitaura Aug 2005 B2
6940214 Komiya Sep 2005 B1
6943500 LeChevalier Sep 2005 B2
6943761 Everitt Sep 2005 B2
6947022 McCartney Sep 2005 B2
6954194 Matsumoto Oct 2005 B2
6956547 Bae Oct 2005 B2
6975142 Azami Dec 2005 B2
6975332 Arnold Dec 2005 B2
6995510 Murakami Feb 2006 B2
6995519 Arnold Feb 2006 B2
7023408 Chen Apr 2006 B2
7027015 Booth, Jr. Apr 2006 B2
7027078 Reihl Apr 2006 B2
7034793 Sekiya Apr 2006 B2
7038392 Libsch May 2006 B2
7053875 Chou May 2006 B2
7057359 Hung Jun 2006 B2
7061263 Ong Jun 2006 B1
7061451 Kimura Jun 2006 B2
7064733 Cok Jun 2006 B2
7071932 Libsch Jul 2006 B2
7088051 Cok Aug 2006 B1
7088052 Kimura Aug 2006 B2
7102378 Kuo Sep 2006 B2
7106285 Naugler Sep 2006 B2
7112820 Chang Sep 2006 B2
7116058 Lo Oct 2006 B2
7119493 Fryer Oct 2006 B2
7122835 Ikeda Oct 2006 B1
7127380 Iverson Oct 2006 B1
7129914 Knapp Oct 2006 B2
7129938 Naugler Oct 2006 B2
7161566 Cok Jan 2007 B2
7164417 Cok Jan 2007 B2
7193589 Yoshida Mar 2007 B2
7199768 Ono Apr 2007 B2
7224332 Cok May 2007 B2
7227519 Kawase Jun 2007 B1
7245277 Ishizuka Jul 2007 B2
7246912 Burger Jul 2007 B2
7248236 Nathan Jul 2007 B2
7262753 Tanghe Aug 2007 B2
7274363 Ishizuka Sep 2007 B2
7310092 Imamura Dec 2007 B2
7315295 Kimura Jan 2008 B2
7321348 Cok Jan 2008 B2
7339560 Sun Mar 2008 B2
7355574 Leon Apr 2008 B1
7358941 Ono Apr 2008 B2
7368868 Sakamoto May 2008 B2
7394195 Kato Jul 2008 B2
7397485 Miller Jul 2008 B2
7411571 Huh Aug 2008 B2
7414600 Nathan Aug 2008 B2
7423617 Giraldo Sep 2008 B2
7453054 Lee Nov 2008 B2
7463222 Fish Dec 2008 B2
7474285 Kimura Jan 2009 B2
7502000 Yuki Mar 2009 B2
7528812 Tsuge May 2009 B2
7535449 Miyazawa May 2009 B2
7554512 Steer Jun 2009 B2
7569849 Nathan Aug 2009 B2
7576718 Miyazawa Aug 2009 B2
7580012 Kim Aug 2009 B2
7589707 Chou Sep 2009 B2
7605792 Son Oct 2009 B2
7609239 Chang Oct 2009 B2
7619594 Hu Nov 2009 B2
7619597 Nathan Nov 2009 B2
7633470 Kane Dec 2009 B2
7656370 Schneider Feb 2010 B2
7675485 Steer Mar 2010 B2
7800558 Routley Sep 2010 B2
7847764 Cok Dec 2010 B2
7859492 Kohno Dec 2010 B2
7868859 Tomida Jan 2011 B2
7876294 Sasaki Jan 2011 B2
7924249 Nathan Apr 2011 B2
7932883 Klompenhouwer Apr 2011 B2
7960917 Kimura Jun 2011 B2
7969390 Yoshida Jun 2011 B2
7978187 Nathan Jul 2011 B2
7994712 Sung Aug 2011 B2
8026876 Nathan Sep 2011 B2
8031180 Miyamoto Oct 2011 B2
8049420 Tamura Nov 2011 B2
8077123 Naugler, Jr. Dec 2011 B2
8115707 Nathan Feb 2012 B2
8208084 Lin Jun 2012 B2
8223177 Nathan Jul 2012 B2
8232939 Nathan Jul 2012 B2
8259044 Nathan Sep 2012 B2
8264431 Bulovic Sep 2012 B2
8279143 Nathan Oct 2012 B2
8294696 Min Oct 2012 B2
8310413 Fish Nov 2012 B2
8314783 Sambandan Nov 2012 B2
8339386 Leon Dec 2012 B2
8441206 Myers May 2013 B2
8493296 Ogawa Jul 2013 B2
8581809 Nathan Nov 2013 B2
8654114 Shimizu Feb 2014 B2
9125278 Nathan Sep 2015 B2
9368063 Chaji Jun 2016 B2
9418587 Chaji Aug 2016 B2
9430958 Chaji Aug 2016 B2
9472139 Nathan Oct 2016 B2
9489891 Nathan Nov 2016 B2
9489897 Jaffari Nov 2016 B2
9502653 Chaji Nov 2016 B2
9530349 Chaji Dec 2016 B2
9530352 Nathan Dec 2016 B2
9536460 Chaji Jan 2017 B2
9536465 Chaji Jan 2017 B2
9589490 Chaji Mar 2017 B2
9633597 Nathan Apr 2017 B2
9640112 Jaffari May 2017 B2
9721512 Soni Aug 2017 B2
9741279 Chaji Aug 2017 B2
9741282 Giannikouris Aug 2017 B2
9761170 Chaji Sep 2017 B2
9773439 Chaji Sep 2017 B2
9773441 Chaji Sep 2017 B2
9786209 Chaji Oct 2017 B2
10089924 Soni Oct 2018 B2
20010002703 Koyama Jun 2001 A1
20010009283 Arao Jul 2001 A1
20010024181 Kubota Sep 2001 A1
20010024186 Kane Sep 2001 A1
20010026257 Kimura Oct 2001 A1
20010030323 Ikeda Oct 2001 A1
20010035863 Kimura Nov 2001 A1
20010038367 Inukai Nov 2001 A1
20010040541 Yoneda Nov 2001 A1
20010043173 Troutman Nov 2001 A1
20010045929 Prache Nov 2001 A1
20010052606 Sempel Dec 2001 A1
20010052940 Hagihara Dec 2001 A1
20020000576 Inukai Jan 2002 A1
20020011796 Koyama Jan 2002 A1
20020011799 Kimura Jan 2002 A1
20020012057 Kimura Jan 2002 A1
20020014851 Tai Feb 2002 A1
20020018034 Ohki Feb 2002 A1
20020030190 Ohtani Mar 2002 A1
20020047565 Nara Apr 2002 A1
20020052086 Maeda May 2002 A1
20020067134 Kawashima Jun 2002 A1
20020084463 Sanford Jul 2002 A1
20020101152 Kimura Aug 2002 A1
20020101172 Bu Aug 2002 A1
20020105279 Kimura Aug 2002 A1
20020117722 Osada Aug 2002 A1
20020122308 Ikeda Sep 2002 A1
20020158587 Komiya Oct 2002 A1
20020158666 Azami Oct 2002 A1
20020158823 Zavracky Oct 2002 A1
20020167471 Everitt Nov 2002 A1
20020167474 Everitt Nov 2002 A1
20020169575 Everitt Nov 2002 A1
20020180369 Koyama Dec 2002 A1
20020180721 Kimura Dec 2002 A1
20020181276 Yamazaki Dec 2002 A1
20020183945 Everitt Dec 2002 A1
20020186214 Siwinski Dec 2002 A1
20020190924 Asano Dec 2002 A1
20020190971 Nakamura Dec 2002 A1
20020195967 Kim Dec 2002 A1
20020195968 Sanford Dec 2002 A1
20030020413 Oomura Jan 2003 A1
20030030603 Shimoda Feb 2003 A1
20030043088 Booth Mar 2003 A1
20030057895 Kimura Mar 2003 A1
20030058226 Bertram Mar 2003 A1
20030062524 Kimura Apr 2003 A1
20030063081 Kimura Apr 2003 A1
20030071821 Sundahl Apr 2003 A1
20030076048 Rutherford Apr 2003 A1
20030090447 Kimura May 2003 A1
20030090481 Kimura May 2003 A1
20030107560 Yumoto Jun 2003 A1
20030111966 Mikami Jun 2003 A1
20030122745 Miyazawa Jul 2003 A1
20030122749 Booth, Jr. Jul 2003 A1
20030122813 Ishizuki Jul 2003 A1
20030142088 LeChevalier Jul 2003 A1
20030146897 Hunter Aug 2003 A1
20030151569 Lee Aug 2003 A1
20030156101 Le Chevalier Aug 2003 A1
20030169241 LeChevalier Sep 2003 A1
20030174152 Noguchi Sep 2003 A1
20030179626 Sanford Sep 2003 A1
20030185438 Osawa Oct 2003 A1
20030197663 Lee Oct 2003 A1
20030210256 Mori Nov 2003 A1
20030230141 Gilmour Dec 2003 A1
20030230980 Forrest Dec 2003 A1
20030231148 Lin Dec 2003 A1
20040032382 Cok Feb 2004 A1
20040036457 Tokioka Feb 2004 A1
20040036708 Evanicky Feb 2004 A1
20040041750 Abe Mar 2004 A1
20040051469 Ha Mar 2004 A1
20040066357 Kawasaki Apr 2004 A1
20040070557 Asano Apr 2004 A1
20040070565 Nayar Apr 2004 A1
20040090186 Kanauchi May 2004 A1
20040090400 Yoo May 2004 A1
20040095297 Libsch May 2004 A1
20040100427 Miyazawa May 2004 A1
20040108518 Jo Jun 2004 A1
20040135749 Kondakov Jul 2004 A1
20040140982 Pate Jul 2004 A1
20040145547 Oh Jul 2004 A1
20040150592 Mizukoshi Aug 2004 A1
20040150594 Koyama Aug 2004 A1
20040150595 Kasai Aug 2004 A1
20040155841 Kasai Aug 2004 A1
20040174347 Sun Sep 2004 A1
20040174349 Libsch Sep 2004 A1
20040174354 Ono Sep 2004 A1
20040178743 Miller Sep 2004 A1
20040178974 Miller Sep 2004 A1
20040183759 Stevenson Sep 2004 A1
20040196275 Hattori Oct 2004 A1
20040207615 Yumoto Oct 2004 A1
20040227697 Mori Nov 2004 A1
20040233125 Tanghe Nov 2004 A1
20040239596 Ono Dec 2004 A1
20040246246 Tobita Dec 2004 A1
20040252089 Ono Dec 2004 A1
20040257313 Kawashima Dec 2004 A1
20040257353 Imamura Dec 2004 A1
20040257355 Naugler Dec 2004 A1
20040263437 Hattori Dec 2004 A1
20040263444 Kimura Dec 2004 A1
20040263445 Inukai Dec 2004 A1
20040263541 Takeuchi Dec 2004 A1
20050007355 Miura Jan 2005 A1
20050007357 Yamashita Jan 2005 A1
20050007392 Kasai Jan 2005 A1
20050017650 Fryer Jan 2005 A1
20050024081 Kuo Feb 2005 A1
20050024393 Kondo Feb 2005 A1
20050030267 Tanghe Feb 2005 A1
20050057484 Diefenbaugh Mar 2005 A1
20050057580 Yamano Mar 2005 A1
20050067943 Sakaguchi Mar 2005 A1
20050067970 Libsch Mar 2005 A1
20050067971 Kane Mar 2005 A1
20050068270 Awakura Mar 2005 A1
20050068275 Kane Mar 2005 A1
20050073264 Matsumoto Apr 2005 A1
20050083323 Suzuki Apr 2005 A1
20050088103 Kageyama Apr 2005 A1
20050105031 Shih May 2005 A1
20050110420 Arnold May 2005 A1
20050110807 Chang May 2005 A1
20050122294 Ben-David Jun 2005 A1
20050140598 Kim Jun 2005 A1
20050140610 Smith Jun 2005 A1
20050145891 Abe Jul 2005 A1
20050156831 Yamazaki Jul 2005 A1
20050162079 Sakamoto Jul 2005 A1
20050168416 Hashimoto Aug 2005 A1
20050179626 Yuki Aug 2005 A1
20050179628 Kimura Aug 2005 A1
20050185200 Tobol Aug 2005 A1
20050190610 Furukawa Sep 2005 A1
20050200575 Kim Sep 2005 A1
20050206590 Sasaki Sep 2005 A1
20050212787 Noguchi Sep 2005 A1
20050219184 Zehner Oct 2005 A1
20050225683 Nozawa Oct 2005 A1
20050248515 Naugler Nov 2005 A1
20050269959 Uchino Dec 2005 A1
20050269960 Ono Dec 2005 A1
20050280615 Cok Dec 2005 A1
20050280766 Johnson Dec 2005 A1
20050285822 Reddy Dec 2005 A1
20050285825 Eom Dec 2005 A1
20060001613 Routley Jan 2006 A1
20060007070 Shih Jan 2006 A1
20060007072 Choi Jan 2006 A1
20060007206 Reddy Jan 2006 A1
20060007249 Reddy Jan 2006 A1
20060012310 Chen Jan 2006 A1
20060012311 Ogawa Jan 2006 A1
20060015272 Giraldo Jan 2006 A1
20060022204 Steer Feb 2006 A1
20060022305 Yamashita Feb 2006 A1
20060022907 Uchino Feb 2006 A1
20060027807 Nathan Feb 2006 A1
20060030084 Young Feb 2006 A1
20060038501 Koyama Feb 2006 A1
20060038758 Routley Feb 2006 A1
20060038762 Chou Feb 2006 A1
20060044227 Hadcock Mar 2006 A1
20060061248 Cok Mar 2006 A1
20060063281 Cok Mar 2006 A1
20060066533 Sato Mar 2006 A1
20060077134 Hector Apr 2006 A1
20060077135 Cok Apr 2006 A1
20060077136 Cok Apr 2006 A1
20060077142 Kwon Apr 2006 A1
20060082523 Guo Apr 2006 A1
20060092185 Jo May 2006 A1
20060097628 Suh May 2006 A1
20060097631 Lee May 2006 A1
20060103324 Kim May 2006 A1
20060103611 Choi May 2006 A1
20060125740 Shirasaki Jun 2006 A1
20060149493 Sambandan Jul 2006 A1
20060170623 Naugler, Jr. Aug 2006 A1
20060176250 Nathan Aug 2006 A1
20060208961 Nathan Sep 2006 A1
20060208971 Deane Sep 2006 A1
20060214888 Schneider Sep 2006 A1
20060231740 Kasai Oct 2006 A1
20060232522 Roy Oct 2006 A1
20060244697 Lee Nov 2006 A1
20060256048 Fish Nov 2006 A1
20060261841 Fish Nov 2006 A1
20060273997 Nathan Dec 2006 A1
20060279481 Haruna Dec 2006 A1
20060284801 Yoon Dec 2006 A1
20060284802 Kohno Dec 2006 A1
20060284895 Marcu Dec 2006 A1
20060290614 Nathan Dec 2006 A1
20060290618 Goto Dec 2006 A1
20070001937 Park Jan 2007 A1
20070001939 Hashimoto Jan 2007 A1
20070008251 Kohno Jan 2007 A1
20070008268 Park Jan 2007 A1
20070008297 Bassetti Jan 2007 A1
20070057873 Uchino Mar 2007 A1
20070057874 Le Roy Mar 2007 A1
20070069998 Naugler Mar 2007 A1
20070075727 Nakano Apr 2007 A1
20070076226 Klompenhouwer Apr 2007 A1
20070080905 Takahara Apr 2007 A1
20070080906 Tanabe Apr 2007 A1
20070080908 Nathan Apr 2007 A1
20070097038 Yamazaki May 2007 A1
20070097041 Park May 2007 A1
20070103411 Cok May 2007 A1
20070103419 Uchino May 2007 A1
20070115221 Buchhauser May 2007 A1
20070126672 Tada Jun 2007 A1
20070164664 Ludwicki Jul 2007 A1
20070164937 Jung Jul 2007 A1
20070164938 Shin Jul 2007 A1
20070164959 Childs Jul 2007 A1
20070182671 Nathan Aug 2007 A1
20070195020 Nathan Aug 2007 A1
20070236134 Ho Oct 2007 A1
20070236440 Wacyk Oct 2007 A1
20070236517 Kimpe Oct 2007 A1
20070241999 Lin Oct 2007 A1
20070273294 Nagayama Nov 2007 A1
20070285359 Ono Dec 2007 A1
20070290957 Cok Dec 2007 A1
20070290958 Cok Dec 2007 A1
20070296672 Kim Dec 2007 A1
20080001525 Chao Jan 2008 A1
20080001544 Murakami Jan 2008 A1
20080012804 Kim Jan 2008 A1
20080030518 Higgins Feb 2008 A1
20080036706 Kitazawa Feb 2008 A1
20080036708 Shirasaki Feb 2008 A1
20080042942 Takahashi Feb 2008 A1
20080042948 Yamashita Feb 2008 A1
20080048951 Naugler, Jr. Feb 2008 A1
20080055209 Cok Mar 2008 A1
20080055211 Ogawa Mar 2008 A1
20080074413 Ogura Mar 2008 A1
20080088549 Nathan Apr 2008 A1
20080088648 Nathan Apr 2008 A1
20080111766 Uchino May 2008 A1
20080116787 Hsu May 2008 A1
20080117144 Nakano et al. May 2008 A1
20080122803 Izadi May 2008 A1
20080136770 Peker Jun 2008 A1
20080150845 Ishii Jun 2008 A1
20080150847 Kim Jun 2008 A1
20080158115 Cordes Jul 2008 A1
20080158648 Cummings Jul 2008 A1
20080170004 Jung Jul 2008 A1
20080191976 Nathan Aug 2008 A1
20080198103 Toyomura Aug 2008 A1
20080211749 Weitbruch Sep 2008 A1
20080218451 Miyamoto Sep 2008 A1
20080225183 Tomizawa Sep 2008 A1
20080230118 Nakatani Sep 2008 A1
20080231558 Naugler Sep 2008 A1
20080231562 Kwon Sep 2008 A1
20080231625 Minami Sep 2008 A1
20080246713 Lee Oct 2008 A1
20080252223 Toyoda Oct 2008 A1
20080252571 Hente Oct 2008 A1
20080259020 Fisekovic Oct 2008 A1
20080284768 Yoshida et al. Nov 2008 A1
20080290805 Yamada Nov 2008 A1
20080297055 Miyake Dec 2008 A1
20090015532 Katayama Jan 2009 A1
20090033598 Suh Feb 2009 A1
20090058772 Lee Mar 2009 A1
20090109142 Takahara Apr 2009 A1
20090121994 Miyata May 2009 A1
20090146926 Sung Jun 2009 A1
20090160743 Tomida Jun 2009 A1
20090162961 Deane Jun 2009 A1
20090174628 Wang Jul 2009 A1
20090184901 Kwon Jul 2009 A1
20090195483 Naugler, Jr. Aug 2009 A1
20090201281 Routley Aug 2009 A1
20090206764 Schemmann Aug 2009 A1
20090207160 Shirasaki Aug 2009 A1
20090213046 Nam Aug 2009 A1
20090244046 Seto Oct 2009 A1
20090262047 Yamashita Oct 2009 A1
20090309503 kIM Dec 2009 A1
20100004891 Ahlers Jan 2010 A1
20100026725 Smith Feb 2010 A1
20100033469 Nathan Feb 2010 A1
20100039422 Seto Feb 2010 A1
20100039458 Nathan Feb 2010 A1
20100045646 Kishi Feb 2010 A1
20100045650 Fish Feb 2010 A1
20100060911 Marcu Mar 2010 A1
20100073335 Min Mar 2010 A1
20100073357 Min Mar 2010 A1
20100078230 Rosenblatt Apr 2010 A1
20100079419 Shibusawa Apr 2010 A1
20100085282 Yu Apr 2010 A1
20100103160 Jeon Apr 2010 A1
20100103203 Choi Apr 2010 A1
20100134456 Oyamada Jun 2010 A1
20100134469 Ogura Jun 2010 A1
20100134475 Ogura Jun 2010 A1
20100165002 Ahn Jul 2010 A1
20100188320 Min Jul 2010 A1
20100194670 Cok Aug 2010 A1
20100207960 Kimpe Aug 2010 A1
20100225630 Levey Sep 2010 A1
20100231528 Wolfe Sep 2010 A1
20100237374 Chu Sep 2010 A1
20100251295 Amento Sep 2010 A1
20100277400 Jeong Nov 2010 A1
20100315319 Cok Dec 2010 A1
20110032232 Smith Feb 2011 A1
20110050870 Hanari Mar 2011 A1
20110063197 Chung Mar 2011 A1
20110069051 Nakamura Mar 2011 A1
20110069089 Kopf Mar 2011 A1
20110069094 Knapp Mar 2011 A1
20110069096 Li Mar 2011 A1
20110074750 Leon Mar 2011 A1
20110074762 Shirasaki Mar 2011 A1
20110109610 Yamamoto May 2011 A1
20110149166 Botzas Jun 2011 A1
20110169798 Lee Jul 2011 A1
20110175895 Hayakawa Jul 2011 A1
20110181630 Smith Jul 2011 A1
20110191042 Chaji Aug 2011 A1
20110199395 Nathan Aug 2011 A1
20110227964 Chaji Sep 2011 A1
20110242074 Bert Oct 2011 A1
20110273399 Lee Nov 2011 A1
20110279488 Nathan Nov 2011 A1
20110292006 Kim Dec 2011 A1
20110293480 Mueller Dec 2011 A1
20120056558 Toshiya Mar 2012 A1
20120062565 Fuchs Mar 2012 A1
20120262184 Shen Oct 2012 A1
20120299970 Bae Nov 2012 A1
20120299973 Jaffari Nov 2012 A1
20120299978 Chaji Nov 2012 A1
20130002527 Kim Jan 2013 A1
20130027381 Nathan Jan 2013 A1
20130057595 Nathan Mar 2013 A1
20130112960 Chaji May 2013 A1
20130135272 Park May 2013 A1
20130162617 Yoon Jun 2013 A1
20130201223 Li Aug 2013 A1
20130241813 Tanaka Sep 2013 A1
20130309821 Yoo Nov 2013 A1
20130321671 Cote Dec 2013 A1
20140015824 Chaji Jan 2014 A1
20140022289 Lee Jan 2014 A1
20140043316 Chaji Feb 2014 A1
20140055500 Lai Feb 2014 A1
20140111567 Nathan Apr 2014 A1
20140225938 Soni Aug 2014 A1
20150366016 Kitamura Dec 2015 A1
20160275860 Wu Sep 2016 A1
20170011674 Chaji Jan 2017 A1
Foreign Referenced Citations (172)
Number Date Country
1 294 034 Jan 1992 CA
2 109 951 Nov 1992 CA
2 249 592 Jul 1998 CA
2 368 386 Sep 1999 CA
2 242 720 Jan 2000 CA
2 354 018 Jun 2000 CA
2 432 530 Jul 2002 CA
2 436 451 Aug 2002 CA
2 438 577 Aug 2002 CA
2 463 653 Jan 2004 CA
2 498 136 Mar 2004 CA
2 522 396 Nov 2004 CA
2 443 206 Mar 2005 CA
2 472 671 Dec 2005 CA
2 567 076 Jan 2006 CA
2526436 Feb 2006 CA
2 526 782 Apr 2006 CA
2 541 531 Jul 2006 CA
2 550 102 Apr 2008 CA
2 773 699 Oct 2013 CA
1381032 Nov 2002 CN
1448908 Oct 2003 CN
1538377 Oct 2004 CN
1623180 Jun 2005 CN
1682267 Oct 2005 CN
1758309 Apr 2006 CN
1760945 Apr 2006 CN
1886774 Dec 2006 CN
1897093 Jul 2007 CN
100375141 Mar 2008 CN
101164377 Apr 2008 CN
101194300 Jun 2008 CN
101300618 Nov 2008 CN
101315742 Dec 2008 CN
101449311 Jun 2009 CN
101477783 Jul 2009 CN
101615376 Dec 2009 CN
101763838 Jan 2010 CN
101923828 Dec 2010 CN
102187679 Sep 2011 CN
102414737 Apr 2012 CN
102656621 Sep 2012 CN
102725786 Oct 2012 CN
102741910 Oct 2012 CN
103051917 Apr 2013 CN
103280162 Sep 2013 CN
20 2006 005427 Jun 2006 DE
0 158 366 Oct 1985 EP
0 940 796 Sep 1999 EP
1 028 471 Aug 2000 EP
1 103 947 May 2001 EP
1 111 577 Jun 2001 EP
1 130 565 Sep 2001 EP
1 194 013 Apr 2002 EP
1 335 430 Aug 2003 EP
1 372 136 Dec 2003 EP
1 381 019 Jan 2004 EP
1 418 566 May 2004 EP
1 429 312 Jun 2004 EP
145 0341 Aug 2004 EP
1 465 143 Oct 2004 EP
1 467 408 Oct 2004 EP
1 469 448 Oct 2004 EP
1 521 203 Apr 2005 EP
1 594 347 Nov 2005 EP
1 784 055 May 2007 EP
1854338 Nov 2007 EP
1 879 169 Jan 2008 EP
1 879 172 Jan 2008 EP
2395499 Dec 2011 EP
2 205 431 Dec 1988 GB
2 389 951 Dec 2003 GB
1272298 Oct 1989 JP
4-042619 Feb 1992 JP
6-314977 Nov 1994 JP
8-340243 Dec 1996 JP
09-090405 Apr 1997 JP
10-153759 Jun 1998 JP
10-254410 Sep 1998 JP
11-202295 Jul 1999 JP
11-219146 Aug 1999 JP
11 231805 Aug 1999 JP
11-282419 Oct 1999 JP
2000-056847 Feb 2000 JP
2000-077192 Mar 2000 JP
2000-81607 Mar 2000 JP
2000-0891998 Mar 2000 JP
2000-352941 Dec 2000 JP
2001-134217 May 2001 JP
2001-195014 Jul 2001 JP
2002-055654 Feb 2002 JP
2002-91376 Mar 2002 JP
2002-514320 May 2002 JP
2002-229513 Aug 2002 JP
2002-268576 Sep 2002 JP
2002-278513 Sep 2002 JP
2002-333862 Nov 2002 JP
2003-022035 Jan 2003 JP
2003-076331 Mar 2003 JP
2003-124519 Apr 2003 JP
2003-150082 May 2003 JP
2003-177709 Jun 2003 JP
2003-271095 Sep 2003 JP
2003-308046 Oct 2003 JP
2003-317944 Nov 2003 JP
2004-004675 Jan 2004 JP
2004-045648 Feb 2004 JP
2004-145197 May 2004 JP
2004-287345 Oct 2004 JP
2005-057217 Mar 2005 JP
2006-284970 Oct 2006 JP
2007-065015 Mar 2007 JP
2007-155754 Jun 2007 JP
2007-206590 Aug 2007 JP
2008-102335 May 2008 JP
4-158570 Oct 2008 JP
2003-195813 Jul 2013 JP
2004-0100887 Dec 2004 KR
342486 Oct 1998 TW
473622 Jan 2002 TW
485337 May 2002 TW
502233 Sep 2002 TW
538650 Jun 2003 TW
569173 Jan 2004 TW
1221268 Sep 2004 TW
1223092 Nov 2004 TW
I 248321 Jan 2006 TW
200727247 Jul 2007 TW
WO 199848403 Oct 1998 WO
WO 199948079 Sep 1999 WO
WO 200106484 Jan 2001 WO
WO 200127910 Apr 2001 WO
WO 200163587 Aug 2001 WO
WO 2002067327 Aug 2002 WO
WO 2003001496 Jan 2003 WO
WO 2003034389 Apr 2003 WO
WO 2003058594 Jul 2003 WO
WO 2003063124 Jul 2003 WO
WO 2003077231 Sep 2003 WO
WO 2003105117 Dec 2003 WO
WO 2004003877 Jan 2004 WO
WO 2004025615 Mar 2004 WO
WO 2004034364 Apr 2004 WO
WO 2004047058 Jun 2004 WO
WO 2004066249 Aug 2004 WO
WO 2004104975 Dec 2004 WO
WO 2005022498 Mar 2005 WO
WO 2005022500 Mar 2005 WO
WO 2005029455 Mar 2005 WO
WO 2005029456 Mar 2005 WO
WO2005034072 Apr 2005 WO
WO 2005055185 Jun 2005 WO
WO 2006000101 Jan 2006 WO
WO 2006053424 May 2006 WO
WO 2006063448 Jun 2006 WO
WO 2006084360 Aug 2006 WO
WO 2007003877 Jan 2007 WO
WO 2007079572 Jul 2007 WO
WO 2007090287 Aug 2007 WO
WO 2007120849 Oct 2007 WO
WO 2009048618 Apr 2009 WO
WO 2009055920 May 2009 WO
WO 2009127065 Oct 2009 WO
WO 2010023270 Mar 2010 WO
WO 2010146707 Dec 2010 WO
WO 2011041224 Apr 2011 WO
WO 2011064761 Jun 2011 WO
WO 2011067729 Jun 2011 WO
WO 2012160424 Nov 2012 WO
WO 2012160471 Nov 2012 WO
WO 2012164474 Dec 2012 WO
WO 2012164475 Dec 2012 WO
Non-Patent Literature Citations (155)
Entry
Ahnood : “Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements”; dated Aug. 2009.
Alexander : “Pixel circuits and drive schemes for glass and elastic AMOLED displays”; dated Jul. 2005 (9 pages).
Alexander : “Unique Electrical Measurement Technology for Compensation Inspection and Process Diagnostics of AMOLED HDTV”; dated May 2010 (4 pages).
Ashtiani : “AMOLED Pixel Circuit With Electronic Compensation of Luminance Degradation”; dated Mar. 2007 (4 pages).
Chaji : “A Current-Mode Comparator for Digital Calibration of Amorphous Silicon AMOLED Displays”; dated Jul. 2008 (5 pages).
Chaji : “A fast settling current driver based on the CCII for AMOLED displays”; dated Dec. 2009 (6 pages).
Chaji : “A Low-Cost Stable Amorphous Silicon AMOLED Display with Full V˜T- and V˜O˜L˜E˜D Shift Compensation”; dated May 2007 (4 pages).
Chaji : “A low-power driving scheme for a-Si:H active-matrix organic light-emitting diode displays”; dated Jun. 2005 (4 pages).
Chaji : “A low-power high-performance digital circuit for deep submicron technologies”; dated Jun. 2005 (4 pages).
Chaji : “A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs”; dated Oct. 2005 (3 pages).
Chaji : “A Novel Driving Scheme and Pixel Circuit for AMOLED Displays”; dated Jun. 2006 (4 pages).
Chaji : “A Novel Driving Scheme for High Resolution Large-area a-Si:H AMOLED displays”; dated Aug. 2005 (3 pages).
Chaji : “A Stable Voltage-Programmed Pixel Circuit for a-Si:H AMOLED Displays”; dated Dec. 2006 (12 pages).
Chaji : “A Sub- μA fast-settling current-programmed pixel circuit for AMOLED displays”; dated Sep. 2007.
Chaji : “An Enhanced and Simplified Optical Feedback Pixel Circuit for AMOLED Displays”; dated Oct. 2006.
Chaji : “Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices”; dated Aug. 2008.
Chaji : “Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel”; dated Apr. 2005 (2 pages).
Chaji : “Dynamic-effect compensating technique for stable a-Si:H AMOLED displays”; dated Aug. 2005 (4 pages).
Chaji : “Electrical Compensation of OLED Luminance Degradation”; dated Dec. 2007 (3 pages).
Chaji : “eUTDSP: a design study of a new VLIW-based DSP architecture”; dated May 2003 (4 pages).
Chaji : “Fast and Offset-Leakage Insensitive Current-Mode Line Driver for Active Matrix Displays and Sensors”; dated Feb. 2009 (8 pages).
Chaji : “High Speed Low Power Adder Design With a New Logic Style: Pseudo Dynamic Logic (SDL)”; dated Oct. 2001 (4 pages).
Chaji : “High-precision fast current source for large-area current-programmed a-Si flat panels”; dated Sep. 2006 (4 pages).
Chaji : “Low-Cost AMOLED Television with IGNIS Compensating Technology”; dated May 2008 (4 pages).
Chaji : “Low-Cost Stable a-Si:H AMOLED Display for Portable Applications”; dated Jun. 2006 (4 pages).
Chaji : “Low-Power Low-Cost Voltage-Programmed a-Si:H AMOLED Display”; dated Jun. 2008 (5 pages).
Chaji : “Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging”; dated Nov. 2008 (3 pages).
Chaji : “Parallel Addressing Scheme for Voltage-Programmed Active-Matrix OLED Displays”; dated May 2007 (6 pages).
Chaji : “Pseudo dynamic logic (SDL): a high-speed and low-power dynamic logic family”; dated 2002 (4 pages).
Chaji : “Stable a-Si:H circuits based on short-term stress stability of amorphous silicon thin film transistors”; dated May 2006 (4 pages).
Chaji : “Stable Pixel Circuit for Small-Area High-Resolution a-Si:H AMOLED Displays”; dated Oct. 2008 (6 pages).
Chaji : “Stable RGBW AMOLED display with OLED degradation compensation using electrical feedback”; dated Feb. 2010 (2 pages).
Chaji : “Thin-Film Transistor Integration for Biomedical Imaging and AMOLED Displays”; dated 2008 (177 pages).
European Search Report for Application No. EP 01 11 22313, dated Sep. 14, 2005 (4 pages).
European Search Report for Application No. EP 04 78 6661 dated Mar. 9, 2009.
European Search Report for Application No. EP 05 75 9141 dated Oct. 30, 2009 (2 pages).
European Search Report for Application No. EP 05 81 9617 dated Jan. 30, 2009.
European Search Report for Application No. EP 06 70 5133 dated Jul. 18, 2008.
European Search Report for Application No. EP 06 72 1798 dated Nov. 12, 2009 (2 pages).
European Search Report for Application No. EP 07 71 0608.6 dated Mar. 19, 2010 (7 pages).
European Search Report for Application No. EP 07 71 9579 dated May 20, 2009.
European Search Report for Application No. EP 07 81 5784 dated Jul. 20, 2010 (2 pages).
European Search Report for Application No. EP 10 16 6143 dated Sep. 3, 2010 (2 pages).
European Search Report and Written Opinion for Application No. 08 86 5338 dated Nov. 2, 2011 (7 pages).
European Search Report for Application No. EP 10 83 4294.0-1903 dated Apr. 8, 2013 (9 pages).
European Search Report for Application No. PCT/CA2006/000177 dated Jun. 2, 2006.
European Search Report for Application No. 05 82 1114 dated Mar. 27, 2009 (2 pages).
European Search Report for Application No. 10 00 0421.7, dated Mar. 26, (6 pages).
European Supplementary Search Report for Application No. EP 04 78 6662 dated Jan. 19, 2007 (2 pages)
Extended European Search Report for Application No. 11 73 9485.8 dated Aug. 6, 2013 (14 pages).
Extended European Search Report for Application No. EP 09 73 3076.5 dated Apr. 27, 2011 (13 pages).
Extended European Search Report for Application No. EP 11 16 8677.0 dated Nov. 29, 2012 (13 page).
Extended European Search Report for Application No. EP 11 19 1641.7 dated Jul. 11, 2012 (14 pages).
Extended European Search Report for Application No. EP 10834297 dated Oct. 27, 2014 (6 pages).
Extended European Search Report for Application No. EP 18172034.3 dated Jul. 16, 2018 (12 pages).
Fossum Eric R.. “Active Pixel Sensors: Are CCD's Dinosaurs?” SPIE: Symposium on Electronic Imaging. Feb. 1, 1993 (13 pages).
Goh “A New a-Si:H Thin-Film Transistor Pixel Circuit for Active-Matrix Organic Light-Emitting Diodes” IEEE Electron Device Letters vol. 24 No. 9 Sep. 2003 pp. 583-585.
International Preliminary Report on Patentability for Application No. PCT/CA2005/001007 dated Oct. 16, 2006 4 pages.
International Search Report for Application No. PCT/CA2004/001741 dated Feb. 21, 2005.
International Search Report for Application No. PCT/CA2004/001742 Canadian Patent Office dated Feb. 21, 2005 (2 pages).
International Search Report for Application No. PCT/CA2005/001007 dated Oct. 18, 2005.
International Search Report for Application No. PCT/CA2005/001897 dated Mar. 21, 2006 (2 pages).
International Search Report for Application No. PCT/CA2007/000652 dated Jul. 25, 2007.
International Search Report for Application No. PCT/CA2009/000501 dated Jul. 30, 2009 (4 pages).
International Search Report for Application No. PCT/CA2009/001769 dated Apr. 8, 2010 (3 pages).
International Search Report for Application No. PCT/IB2010/055481 dated Apr. 7, 2011 3 pages.
International Search Report for Application No. PCT/IB2010/055486 dated Apr. 19, 2011 5 pages.
International Search Report for Application No. PCT/IB2014/060959 dated Aug. 28, 2014 5 pages.
International Search Report for Application No. PCT/IB2010/055541 filed Dec. 1, 2010 dated May 26, 2011; 5 pages.
International Search Report for Application No. PCT/IB2011/050502 dated Jun. 27, 2011 (6 pages).
International Search Report for Application No. PCT/IB2011/051103 dated Jul. 8, 2011 3 pages.
International Search Report for Application No. PCT/IB2011/055135 Canadian Patent Office dated Apr. 16, 2012 (5 pages).
International Search Report for Application No. PCT/IB2012/052372 dated Sep. 12, 2012 (3 pages).
International Search Report for Application No. PCT/IB2013/054251 Canadian Intellectual Property Office dated Sep. 11, 2013; (4 pages).
International Search Report for Application No. PCT/JP02/09668 dated Dec. 3, 2002 (4 pages).
International Search Report for Application No. PCT/CA02/00180 dated Jul. 31, 2002 (3 pages).
International Search Report for Application No. PCT/CA2005/001844 dated Mar. 28, 2006 (2 pages).
International Search Report for Application No. PCT/CA2008/002307, dated Apr. 28, 2009 (3 pages).
International Written Opinion for Application No. PCT/CA2004/001742 Canadian Patent Office dated Feb. 21, 2005 (5 pages).
International Written Opinion for Application No. PCT/CA2005/001897 dated Mar. 21, 2006 (4 pages).
International Written Opinion for Application No. PCT/CA2009/000501 dated Jul. 30, 2009 (6 pages).
International Written Opinion for Application No. PCT/IB2010/055481 dated Apr. 7, 2011 6 pages.
International Written Opinion for Application No. PCT/IB2010/055486 dated Apr. 19, 2011 8 pages.
International Written Opinion for Application No. PCT/IB2010/055541 dated May 26, 2011; 6 pages.
International Written Opinion for Application No. PCT/IB2011/050502 dated Jun. 27, 2011 (7 pages).
International Written Opinion for Application No. PCT/IB2011/051103 dated Jul. 8, 2011 6 pages.
International Written Opinion for Application No. PCT/IB2011/055135 Canadian Patent Office dated Apr. 16, 2012 (5 pages).
International Written Opinion for Application No. PCT/IB2012/052372 dated Sep. 12, 2012 (6 pages).
International Written Opinion for Application No. PCT/IB2013/054251 Canadian Intellectual Property Office dated Sep. 11, 2013; (5 pages).
Jafarabadiashtiani: “A New Driving Method for a-Si AMOLED Displays Based on Voltage Feedback”; dated 2005 (4 pages).
Kanicki J.; “Amorphous Silicon Thin-Film Transistors Based Active-Matrix Organic Light-Emitting Displays.” Asia Display: International Display Workshops Sep. 2001 (pp. 315-318).
Karim K. S. “Amorphous Silicon Active Pixel Sensor Readout Circuit for Digital Imaging.” IEEE: Transactions on Electron Devices. vol. 50 No. 1 Jan. 2003 (pp. 200-208).
Lee : “Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon”; dated 2006.
Lee Wonbok: “Thermal Management in Microprocessor Chips and Dynamic Backlight Control in Liquid Crystal Displays” Ph.D. Dissertation University of Southern California, Aug. 2008 (124 pages).
Liu P. Innovative Voltage Driving Pixel Circuit Using Organic Thin-Film Transistor for AMOLEDs Journal of Display Technology vol. 5 Issue 6 Jun. 2009 (pp. 224-227).
Ma E Y: “organic light emitting diode/thin film transistor integration for foldable displays” dated Sep. 15, 1997(4 pages).
Matsueda y : “35.1: 2.5-in. AMOLED with Integrated 6-bit Gamma Compensated Digital Data Driver”; dated May 2004.
Mendes E. “A High Resolution Switch-Current Memory Base Cell.” IEEE: Circuits and Systems. vol. 2 Aug. 1999 (pp. 718-721).
Nathan A. “Thin Film imaging technology on glass and plastic” ICM 2000 proceedings of the 12 international conference on microelectronics dated Oct. 31, 2001 (4 pages).
Nathan “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic” IEEE Journal of Solid-State Circuits vol. 39 No. 9 Sep. 2004 pp. 1477-1486.
Nathan : “Backplane Requirements for active Matrix Organic Light Emitting Diode Displays”; dated 2006 (16 pages).
Nathan : “Call for papers second international workshop on compact thin-film transistor (TFT) modeling for circuit simulation”; dated Sep. 2009 (1 page).
Nathan : “Driving schemes for a-Si and LTPS AMOLED displays”; dated Dec. 2005 (11 pages).
Nathan : “Invited Paper: a-Si for AMOLED—Meeting the Performance and Cost Demands of Display Applications (Cell Phone to HDTV)”; dated 2006 (4 pages).
Office Action in Japanese patent application No. JP2006-527247 dated Mar. 15, 2010 (8 pages).
Office Action in Japanese patent application No. JP2007-545796 dated Sep. 5, 2011 (8 pages).
Office Action in Chinese patent application No. 200910246264.4 dated Jul. 5, 2013 (8 pages).
Office Action in Japanese patent application No. JP2012-541612 dated Jul. 15, 2014. (3 pages).
Partial European Search Report for Application No. EP 11 168 677.0 dated Sep. 22, 2011 (5 pages).
Partial European Search Report for Application No. EP 11 19 1641.7 dated Mar. 20, 2012 (8 pages).
Philipp: “Charge transfer sensing” Sensor Review vol. 19 No. 2 Dec. 31, 1999 (Dec. 31, 1999) 10 pages.
Rafati : “Comparison of a 17 b multiplier in Dual-rail domino and in Dual-rail D L (D L) logic styles”; dated 2002 (4 pages).
Safavian : “3-TFT active pixel sensor with correlated double sampling readout circuit for real-time medical x-ray imaging”; dated Jun. 2006 (4 pages).
Safavian : “A novel current scaling active pixel sensor with correlated double sampling readout circuit for real time medical x-ray imaging”; dated May 2007 (7 pages).
Safavian : “A novel hybrid active-passive pixel with correlated double sampling CMOS readout circuit for medical x-ray imaging”; dated May 2008 (4 pages).
Safavian : “Self-compensated a-Si:H detector with current-mode readout circuit for digital X-ray fluoroscopy”; dated Aug. 2005 (4 pages).
Safavian : “TFT active image sensor with current-mode readout circuit for digital x-ray fluoroscopy [5969D-82]”; dated Sep. 2005 (9 pages).
Safavian : “Three-TFT image sensor for real-time digital X-ray imaging”; dated Feb. 2, 2006 (2 pages).
Sanford, James L.; “4.2 TFT AMOLED Pixel Circuits and Driving Methods”; SID 03 Digest, ISSN/0003, 2003, pp. 1-13.
Search Report for Taiwan Invention Patent Application No. 093128894 dated May 1, 2012 (1 page).
Search Report for Taiwan Invention Patent Application No. 94144535 dated Nov. 1, 2012 (1 page).
Singh “Current Conveyor: Novel Universal Active Block” Samriddhi S-JPSET vol. I Issue 1 2010 pp. 41-48 (12EPPT).
Smith Lindsay I. “A tutorial on Principal Components Analysis” dated Feb. 26, 2001 (27 pages).
Spindler System Considerations for RGBW OLED Displays Journal of the SID 14/1 2006 pp. 37-48.
Spindler et al.; “System Considerations for RGBW OLED Displays”; Journal of the SID 14/1, 2006, pp. 37-48.
Snorre Aunet: “switched capacitors circuits” University of Oslo Mar. 7, 2011 (Mar. 7, 2011) XP002729694 Retrieved from the Internet: URL:http://www.uio.no/studier/emner/matnat/ifi/INF4420/v11/undervisningsmateriale/INF4420_V11_0308_1.pdf [retrieved on Sep. 9, 2014].
Stewart M. “polysilicon TFT technology for active matrix oled displays” IEEE transactions on electron devices vol. 48 No. 5 dated May 2001 (7 pages).
Tatsuya Sasaoka et al.; “2.4.L; Late-News Paper: A 13.0-inch AM-Oled Display with Top Emitting Structure and Adaptive Current Mode Programmed Pixel Circuit (TAC)”; SID 01 Digest, 2001, pp. 384-387.
Vygranenko : “Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition”; dated 2009.
Wang : “Indium oxides by reactive ion beam assisted evaporation: From material study to device application”; dated Mar. 2009 (6 pages).
Written Opinion for Application No. PCT/IB2014/059409, Canadian Intellectual Property Office, dated Jun. 12, 2014 (5 pages).
Written Opinion for Application No. PCT/CA2009/000501 dated Jul. 30, 2009 (6 pages).
Yi He “Current-Source a-Si:H Thin Film Transistor Circuit for Active-Matrix Organic Light-Emitting Displays”; IEEE Electron Device Letters vol. 21 No. 12 Dec. 2000 pp. 590-592.
Yu Jennifer: “Improve OLED Technology for Display” Ph.D. Dissertation Massachusetts Institute of Technology Sep. 2008 (151 pages).
Zhiguo Meng et al.; “24.3: Active-Matrix Organic Light-Emitting Diode Display implemented Using Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin-Film Transistors”; SID 01 Digest, 2001, pp. 380-383.
International Search Report for Application No. PCT/IB2014/058244 Canadian Intellectual Property Office dated Apr. 11, 2014; (6 pages).
International Search Report for Application No. PCT/IB2014/059753 Canadian Intellectual Property Office dated Jun. 23, 2014; (6 pages).
Written Opinion for Application No. PCT/IB2014/059753 Canadian Intellectual Property Office dated Jun. 12, 2014 (6 pages).
International Search Report for Application No. PCT/IB2014/060879 Canadian Intellectual Property Office dated Jul. 17, 2014 (3 pages).
International Search Report and Written Opinion of International Searching Authority for Application No. PCT/IB2014/059697 dated Oct. 15, 2014 (13 pages).
Extended European Search Report for Application No. EP 14158051.4 dated Jul. 29, 2014 (4 pages).
Office Action in Chinese Patent Invention No. 201180008188.9 dated Jun. 4, 2014 (17 pages).
International Search Report for Application No. PCT/IB/2014/066932 dated Mar. 24, 2015.
Written Opinion for Application No. PCT/IB/2014/066932 dated Mar. 24, 2015.
Extended European Search Report for Application No. EP 11866291.5 dated Mar. 9, 2015 (9 pages).
Extended European Search Report for Application No. EP 14181848.4 dated Mar. 5, 2015 (8 pages).
Office Action in Chinese Patent Invention No. 201280022957.5 dated Jun. 26, 2015 (7 pages).
Extended European Search Report for Application No. EP 13794695.0 dated Dec. 18, 2015 (9 pages).
Extended European Search Report for Application No. EP 16157746.5 dated Apr. 8, 2016 (11 pages).
Extended European Search Report for Application No. EP 16192749.6 dated Dec. 15, 2016 (17 pages).
International Search Report for Application No. PCT/IB/2016/054763 dated Nov. 25, 2016 (4 pages).
Written Opinion for Application No. PCT/IB/2016/054763 dated Nov. 25, 2016 (9 pages).
Extended European Search Report for Application No. EP 17195377.1 dated Feb. 12, 2018 (8 pages).
Extended European Search Report for Application No. EP 18150300.4 dated Mar. 14, 2018 (11 pages).
Jafarabadiashtiani, S.; “Pixel Circuits and Driving Schemes for Active-Matrix Organic Light-Emitting Diode Displays”; 2007 University of Waterloo, Electrical and Computer Engineering (188 pages).
Related Publications (1)
Number Date Country
20180366063 A1 Dec 2018 US
Provisional Applications (2)
Number Date Country
61787397 Mar 2013 US
61564634 Nov 2011 US
Continuations (1)
Number Date Country
Parent 14255132 Apr 2014 US
Child 16112161 US
Continuation in Parts (2)
Number Date Country
Parent 14204209 Mar 2014 US
Child 14255132 US
Parent 13689241 Nov 2012 US
Child 14204209 US