The present invention relates to a structure and configuration of the passively Q-switched diode end-pumped solid-state laser. This invention proposes a configuration that uses the end-pumping structure, can be applied for various military applications such as laser range-finder and target designator.
The structure of the passively q-switched diode end-pumped solid-state laser includes main components such as: laser diodes, coupling lenses, input coupler, active gain medium, q-switch and output coupler. These optical components are integrated by a precise mechanical housing to form a laser transmitter. The nanosecond pulse width is generated by using the active or passive q-switch. The pulse energy significantly depends on different parameters such as cavity length, active rod size, initial transmittance of saturable absorber and output coupler reflectivity. For the resonator cavity using an end-pump structure, it is important to optimize the pump laser beam diameter or dimensions to maximize the output peak power. In addition, the initial transmittance of the Q-switch and the reflectivity of the output coupler is also necessary to study improving the pulse energy and reduce the intracavity fluence, simultaneously. The present invention is focused on the configuration of a resonator cavity in which the mechanical, optical, and physical parameters are optimized to ensure that the cavity can achieve pulse energy in the range of 0.5 mJ to 2 mJ with the pulse width in the range of 4 ns to 15 ns.
The purpose of the present invention is to propose a laser cavity configuration using an Er:Yb doped glass and Co2+:MgAl2O4 crystal as a passive q-switch. The technical specifications of elements are optimized to achieve pulse energy (E) in the range of 0.5 mJ to 2 mJ and laser pulse width in the range of 4 ns to 15 ns.
To achieve the above purpose, the proposed structure includes the following components:
A laser base is used to mount optical elements comprising of laser diode, coupling lenses, input coupler, gain medium, Q-switch, and output coupler along the optical axis of the diode laser to form a laser transmitter.
A diode laser source is a pulsed laser source that is a type of laser diode bar with a center wavelength in the range of 900 nm to 1000 nm, which can generate laser pulses with a peak power of 20 W to 120 W, the pulse width of 2 ms to 5 ms, and the pulse repetition rate of 1 Hz to 10 Hz.
Coupling lenses are responsible for guiding the laser from the diode laser source to the active gain medium in the cavity. The position of each lens in the system can be varied axially to control the diameter/dimensions of the pump laser beam entering the active rod in the range of 0.5 mm to 1 mm.
An input coupler that is coated with an anti-reflective layer for the pump laser and highly reflective layer for the emitted radiation. The input coupler can be an individual mirror or coated directly on the end-side of the gain medium.
A intracavity holder is used to attach the gain medium and the Q-switch. This intracavity holder is precisely mounted on the laser base.
A gain medium is made of phosphate glass doped with ions Er3+ and Yb3+ (Er:Yb co-doped crystal). The laser with the desired wavelength will be emitted under the excitation of the pump diode laser source.
A passive Q-switch is made of Co2+:MgAl2O4 material as a laser on/off switch can be placed perpendicularly or at Brewster's angle to the laser in the cavity.
An output coupler is coated to allow the laser to transmit partially. A part of the laser is reflected into the resonator cavity while the remaining part of the laser exits from the resonator cavity with the desired pulse energy.
The laser base (1) made of copper (Cu) is precisely machined, the mounting position between the input coupler and output coupler can be varied in a range of 15 mm-30 mm to ensure the output laser pulse width is in a range of 4 ns-15 ns.
The diode laser source (2) is mounted on the laser base (1). The center wavelength of the diode laser is in a range of 900 nm-1000 nm to match the absorption spectrum diagram of the gain medium made of Er:Yb doped glass as shown in
The coupling lenses consists of spherical and cylindrical lenses (
Gain medium (6) is made of Er:Yb doped glass which is doped from 0.3×1020 to 0.5×1020 cm−3 Er3+ ions and from 1.7×1021 to 2×1021 cm−3 Yb3+ ions. Yb3+ ion concentration in the above range are used to optimize the energy transfer efficiency from Yb3+ ions to Er3+ ions during pumping. Er3+ ion concentration from 0.3×1020 to 0.5×1020 cm−3 is used to obtain the maximum value of gain in the cavity and reduce the reabsorbing photon emitted in cavity.
The gain medium length is optimally calculated for the resonator cavity operating in free-run mode:
where NYb and NEr respectively are population density of Yb3+ at energy level 2F5/2 and Er3+ at energy level 4I13/2; N0Er is doping concentration of Er3+ ions; τEr and τYb are the lifetime of Er3+ and Yb3+ ions at energy level mention above, respectively; Wp (x, y, z, t) is the rate of laser pump source; αET is energy transfer coefficient between Yb3+ and Er3+. Gain g(x, y, z, t) in gain medium with the length of z can be expressed by:
g(x,y,z,t)=∫0zkg(x,y,z′,t)dz′ (3)
kg=NErσSEL−(NEr0−NEr)σabsL (4)
where σSEL and σabsL are emission and absorption cross-section of Er3+ at laser wavelength νL.
Input coupler (4) is coated with the anti-reflective layer for the wavelength between 900 nm and 1000 nm to transmit ≥98% and highly reflective for the wavelength between 1525 nm and 1570 nm to reflect >98%. This element can be an individual mirror or a coating layer on the end-side of the gain medium (6).
Passive Q-switch (7) is a saturable absorber made of Co+:MgAl2O4 crystal with initial transmittance (T0) in the range 85%≤T0≤92%, which ensures laser pulse energy ≥0.5 mJ.
Intracavity holder (5) attaches gain medium (6) and Q-switch (7). Q-switch (7) is placed perpendicularly or at Brewster's angle to the optical line. This element can be placed separately or bonded directly on the right side of the gain medium (6). The optical line is defined as the line perpendicular to the input (4) and the output coupler (8) which simultaneously is the symmetry axis of the gain medium (6). The intracavity holder (5) is precisely mounted on the laser base (1).
Output coupler (8) is coated to allow the radiation to reflect ≤85% with the wavelength between 1525 nm and 1570 nm, hence, the intracavity fluence in the cavity is <10 J/cm2 (damage threshold of the optical elements used). The intracavity fluence (Fin) is expressed by:
where TOC is the transmittance of output coupler, E is pulse energy output from the laser system.
Although the structure of the resonator cavity in the present invention has been illustrated in the accompanying Drawings and described in the foregoing Detailed Description, it should be noted that the invention is not limited to the described resonator cavity, but is capable of different rearrangements, modifications or substitutions without departing from the invention as set forth and defined by the following claims.
Number | Date | Country | Kind |
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1-2020-07501 | Dec 2020 | VN | national |
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