I. Akasaki et al., Shortest Wavelength Semiconductor Laser Diode, Electronics Letters, vol. 32, No. 12, Jun. 6, 1996, pp. 1105-1106. |
G. E. Bulman et al., Pulsed Operation Lasing in a Cleaved-Facet InGaN/GaN MQW SCH Laser Grown on 6H-SIC, Electronics Letters, vol. 33, No. 18, Aug. 28, 1997, pp. 1556-1557. |
K. Itaya et al., Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates, Japan J. Appl. Phys., vol. 35, Part, 2, No. 10B, 1996, pp. L1315-L1317. |
Y. Kimura et al., Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on A-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition, Japan J. Appl. Phys., vol. 37, Part 2, No. 108, Oct. 15, 1998, pp. L1231-L1233. |
T. Kobayashi et al., Room-Temperature Continuous-Wave Operation of GalnN/GaN Multiquantum well Laser Diode, Electronics Letters, vol. 34, No. 15, Jul. 23, 1998, pp. 1494-1495. |
A. Kuramata et al., Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SIC Substrate, Japan J. Appl. Phys., vol. 37, Part 2, No. 11B, Nov. 15, 1998, pp. L-1373-L1375. |
M. P. Mack et al., Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD, The Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 2, Article 41, Sep. 17, 1997, No Page Number Listed. |
S. Nakamura et al., Continuous-Wave Operation of InGaN Multi-Quantum-Well-Structure Laser Diodes at 233 K, Applied Physics Letter, vol. 69, No. 20, Nov. 11, 1996, pp. 3034-3036. |
S. Nakamura et al., InGaN-Based Multi-Quantum-Well-Structure Laser Diodes, Japan J. Appl. Phys., vol. 35, Part 2, No. 1B, Jan. 15, 1996, pp. L74-L76. |
S. Nakamura et al., Room-Temperature Continuous-Wave Operation of InGaN Multiquantum-Well Structure Laser Diodes with a Lifetime of 27 Hours, Applied Physics Letter, vol. 70, No. 11, Mar. 17, 1997, pp. 1417-1419. |
S. Nakamura et al., Violet InGaN/GaN/A1GaN-Based Laser Diodes with an Output Power of 420 MW, Japan J. Appl. Phys., vol. 37, Part 2, No. 6A, Jun. 1, 1998, pp. L627-L629. |
Y. Park et al., Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System, The Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, Article 1, Jan. 19, 1999, pp. 1-4. |