Structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter

Abstract

A structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter, the structure and method mainly utilize a metal to be filled in a contact well on a source/drain metal layer or in a contact well corresponding to the position of the source/drain metal layer on a poly-silicon island to effectively reduce the contact resistance between pixel electrode and thin film transistor, therefore color display quality of the organic light emitting diode is improved.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a structure diagram of a prior art organic light emitting diode integrated with a color filter.

FIG. 2 is a structure diagram of the first embodiment of organic light emitting diode integrated with a color filter of the present invention.

FIG. 3 is a structure diagram of the second embodiment of organic light emitting diode integrated with a color filter of the present invention.

FIG. 4 is a structure diagram of the third embodiment of organic light emitting diode integrated with a color filter of the present invention.

Claims

1. A structure for improving contact resistance of an organic light emitting diode integrated with a color filter, comprising: a substrate;a poly-silicon island formed on the substrate;an insulating oxide layer formed on the substrate to cover the poly-silicon island;a gate metal layer corresponding to the central position of the poly-silicon island formed on the insulating oxide layer;a dielectric layer formed on the insulating oxide layer to cover the gate metal layer, wherein multiple contact wells are formed on the dielectric layer and the contact wells penetrate the dielectric layer and the insulating oxide layer;a source/drain metal layer formed on the dielectric layer, wherein a part of the source/drain metal layer fills the contact wells and penetrates the dielectric layer and the insulating oxide layer to connect with corresponding position of the poly-silicon island;a color filter formed on the source/drain metal layer;a planarization layer formed on the color filter, wherein a contact well is formed on the planarization layer and the contact well penetrates the planarization layer and the color filter;a metal layer formed on the planarization layer, wherein a part of the metal layer fills the contact well and penetrates the planarization layer and the color filter to connect with corresponding position of the source/drain metal layer; anda pixel electrode layer formed on the metal layer and the planarization layer.

2. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 1, wherein the planarization layer is made of an organic material or an inorganic material.

3. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 1, wherein the dielectric layer is made of an organic material or an inorganic material.

4. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 1, wherein the poly-silicon island is made of any semiconductor material.

5. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 1, wherein the substrate is made of plastic, glass, quartz, or silicon wafer.

6. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 1, wherein the metal layer to be filled in the contact wells is made of any metal with low resistance or organic conductive material and is a multi-layer structure.

7. A method for improving contact resistance of an organic light emitting diode integrated with a color filter, comprising: (a) providing a substrate;(b) forming a poly-silicon island on the substrate;(c) forming an insulating oxide layer on the substrate to cover the poly-silicon island;(d) forming a gate metal layer corresponding to the central position of the poly-silicon island on the insulating oxide layer;(e) forming a dielectric layer on the insulating oxide layer to cover the gate metal layer;(f) forming multiple contact wells on the dielectric layer, wherein the contact wells penetrate the dielectric layer and the insulating oxide layer;(g) forming a source/drain metal layer on the dielectric layer, wherein a part of the metal layer fills the contact wells and penetrates the dielectric layer and the insulating oxide layer to connect with corresponding positions of the poly-silicon island;(h) forming a color filter on the source/drain metal layer;(i) forming a planarization layer on the color filter;(j) forming a contact well on the planarization layer, wherein the contact well penetrates the planarization layer and the color filter;(k) forming a metal layer on the planarization layer, wherein a part of the metal layer fills the contact well and penetrates the planarization layer and the color filter to connect with corresponding position of the source/drain metal layer; and(l) forming a pixel electrode layer on the metal layer and the planarization layer.

8. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 7, wherein the planarization layer is made of an organic material or an inorganic material, the dielectric layer is made of an organic material or an inorganic material, the poly-silicon island is made of any semiconductor material, and the substrate is made of plastic, glass, quartz, or silicon wafer.

9. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 7, wherein the metal layer to be filled in the contact wells is made of any metal with low resistance or organic conductive material and is a multi-layer structure.

10. A structure for improving contact resistance of an organic light emitting diode integrated with a color filter, comprising: a substrate;a poly-silicon island formed on the substrate;an insulating oxide layer formed on the substrate to cover the poly-silicon island;a gate metal layer corresponding to the central position of the poly-silicon island formed on the insulating oxide layer;a color filter formed on the insulating oxide layer to cover the gate metal layer;a planarization layer formed on the color filter, wherein multiple contact wells are formed on the planarization layer and the contact wells penetrate the planarization layer, the color filter and the insulating oxide layer;a metal layer formed on the planarization layer, wherein a part of the metal layer fills the contact wells and penetrates the planarization layer, the color filter and the insulating oxide layer to connect with corresponding positions of the poly-silicon island; anda pixel electrode layer formed on the metal layer and the planarization layer.

11. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 10, wherein the planarization layer is made of an organic material or an inorganic material.

12. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 10, wherein the poly-silicon island is made of any semiconductor material.

13. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 10, wherein the substrate is made of plastic, glass, quartz, or silicon wafer.

14. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 10, wherein the metal layer to be filled in the contact wells is made of any metal with low resistance or organic conductive material and is a multi-layer structure.

15. A method for improving contact resistance of an organic light emitting diode integrated with a color filter, comprising: (a) providing a substrate;(b) forming a poly-silicon island on the substrate;(c) forming an insulating oxide layer on the substrate to cover the poly-silicon island;(d) forming a gate metal layer corresponding to the central position of the poly-silicon island on the insulating oxide layer;(e) forming a color filter on the insulating oxide layer to cover the gate metal layer;(f) forming a planarization layer on the color filter;(g) forming multiple contact wells on the planarization layer, wherein the contact wells penetrate the planarization layer, the color filter, and the insulating oxide layer;(h) forming a metal layer on the planarization layer, wherein a part of the metal layer fills the contact wells and penetrates the planarization layer, the color filter and the insulating oxide layer to connect with corresponding positions of the poly-silicon island; and(i) forming a pixel electrode layer on the planarization layer.

16. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 15, wherein the planarization layer is made of an organic material or an inorganic material, the poly-silicon island is made of any semiconductor material, and the substrate is made of plastic, glass, quartz, or silicon wafer.

17. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 15, wherein the metal layer to be filled in the contact wells is made of any metal with low resistance or organic conductive material and is a multi-layer structure.

18. A structure for improving contact resistance of an organic light emitting diode integrated with a color filter, comprising: a substrate;a poly-silicon island formed on the substrate;an insulating oxide layer formed on the substrate to cover the poly-silicon island;a gate metal layer corresponding to the central position of the poly-silicon island formed on the insulating oxide layer;a color filter formed on the insulating oxide layer to cover the gate metal layer, wherein multiple contact wells are formed on the color filter and the contact wells penetrate the color filter and the insulating oxide layer;a metal layer formed on the color filter, wherein a part of the metal layer fills the contact wells and penetrates the color filter and the insulating oxide layer to connect with corresponding positions of the poly-silicon island;a source/drain metal layer formed on the metal layer and the color filter;a planarization layer formed on the source/drain metal layer to cover the color filter, wherein a contact well is formed on the planarization layer and the contact well penetrates the planarization layer;a pixel electrode layer formed on the planarization layer, wherein a part of the pixel electrode layer fills the contact well and penetrates the planarization layer to connect with corresponding position of the source/drain metal layer.

19. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 18, wherein the pixel electrode layer is replaced by the following: a metal layer formed on the planarization layer, wherein a part of the metal layer fills the contact well and penetrates the planarization layer to connect with corresponding position of the source/drain metal layer; anda pixel electrode layer formed on the metal layer and the planarization layer.

20. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 18, wherein the planarization layer is made of an organic material or an inorganic material.

21. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 18, wherein the poly-silicon island is made of any semiconductor material.

22. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 18, wherein the substrate is made of plastic, glass, quartz, or silicon wafer.

23. The structure for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 18, wherein the metal layer to be filled in the contact wells is made of any metal with low resistance or organic conductive material and is a multi-layer structure.

24. A method for improving contact resistance of an organic light emitting diode integrated with a color filter, comprising: (a) providing a substrate;(b) forming a poly-silicon island on the substrate;(c) forming an insulating oxide layer on the substrate to cover the poly-silicon island;(d) forming a gate metal layer corresponding to the central position of the poly-silicon island on the insulating oxide layer;(e) forming a color filter on the insulating oxide layer to cover the gate metal layer;(f) forming multiple contact wells on the color filter, wherein the contact wells penetrate the color filter and the insulating oxide layer;(g) forming a metal layer on the color filter, wherein a part of the metal layer fills the contact wells and penetrates the color filter and the insulating oxide layer to connect with corresponding positions of the poly-silicon island;(h) forming a source/drain metal layer on the metal layer and the color filter;(i) forming a planarization layer on the color filter to cover the source/drain metal layer;(j) forming a contact well on the planarization layer, wherein the contact well penetrates the planarization layer; and(k) forming a pixel electrode layer on the planarization layer, wherein a part of the pixel electrode layer fills the contact well and penetrates the planarization layer to connect with corresponding position of the source/drain metal layer.

25. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 24, wherein the step (k) is replaced by the following: forming a metal layer on the planarization layer, wherein a part of the metal layer fills the contact well and penetrates the planarization layer to connect with corresponding position of the source/drain metal layer; and forming a pixel electrode layer on the metal layer and the planarization layer.

26. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 24, wherein the planarization layer is made of an organic material or an inorganic material, the poly-silicon island is made of any semiconductor material, and the substrate is made of plastic, glass, quartz, or silicon wafer.

27. The method for improving contact resistance of an organic light emitting diode integrated with a color filter of claim 24, wherein the metal layer to be filled in the contact wells is made of any metal with low resistance or organic conductive material and is a multi-layer structure.