Claims
- 1. A self-aligned, index guided, buried heterostructure nitride laser structure comprising:
a ridge structure having a first, a second, and a third surface, said ridge structure comprising a first waveguide layer and a second waveguide layer with a multiple quantum well structure positioned between said first waveguide layer and said second waveguide layer; and a burying layer overlying said first, said second and said third surface of said ridge structure.
- 2. The nitride laser structure of claim 1 wherein said ridge structure further comprises a cladding layer adjacent to said second waveguide layer.
- 3. The nitride laser structure of claim 2 wherein said cladding layer is contiguous with a short period superlattice structure.
- 4. The nitride laser structure of claim 1 wherein said ridge structure is oriented along the <1100> crystallographic direction.
- 5. The nitride laser structure of claim 2 wherein said burying layer contacts said cladding layer to form a p-n junction.
- 6. A self-aligned, index guided, buried heterostructure nitride laser structure comprising:
a ridge structure having a first, a second, and a third surface, said ridge structure comprising a waveguide layer and a cladding layer with a multiple quantum well structure disposed between said waveguide layer and said cladding layer, said cladding layer being contiguous with said multiple quantum well structure; and a burying layer overlying said first, said second and said third surface of said ridge structure.
- 7. The nitride laser structure of claim 6 wherein said cladding layer is disposed between said multiple quantum well structure and a short period superlattice structure.
- 8. The nitride laser structure of claim 6 wherein said ridge structure is oriented along the <1100>crystallographic direction.
- 9. The nitride laser structure of claim 7 wherein said short period superlattice comprises alternating layers of AlGaN and GaN.
- 10. The nitride laser structure of claim 7 wherein said cladding layer prevents charge carriers from being injected from said burying layer into said short period superlattice structure.
- 11. A method for making a self-aligned, index guided, buried heterostructure nitride laser structure comprising the steps of:
providing a ridge structure having a first, a second, and a third surface, said ridge structure comprising a first waveguide layer and a second waveguide layer with a multiple quantum well structure positioned between said first waveguide layer and said second waveguide layer; and adding a burying layer overlying said first, said second and said third surface of said ridge structure.
- 12. The method of claim 11 further comprising the step of providing a cladding layer adjacent to said second waveguide layer.
- 13. The method of claim 12 wherein said cladding layer is contiguous with a short period superlattice structure.
- 14. The method of claim 11 wherein said ridge structure is oriented along the <1100>crystallographic direction.
- 15. The method of claim 12 wherein said burying layer contacts said cladding layer to form a p-n junction.
- 16. A method for making a self-aligned, index guided, buried heterostructure nitride laser structure comprising the steps of:
providing a ridge structure having a first, a second, and a third surface, said ridge structure comprising a waveguide layer and a cladding layer with a multiple quantum well structure disposed between said waveguide layer and said cladding layer, said cladding layer being contiguous with said multiple quantum well structure; and adding a burying layer overlying said first, said second and said third surface of said ridge structure.
- 17. The method of claim 16 wherein said cladding layer is disposed between said multiple quantum well structure and a short period superlattice structure.
- 18. The method of claim 16 wherein said ridge structure is oriented along the <1100> crystallographic direction.
- 19. The method of claim 17 wherein said short period superlattice comprises alternating layers of AlGaN and GaN.
- 20. The method of claim 17 wherein said cladding layer prevents charge carriers from being injected from said burying layer into said short period superlattice structure.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to commonly assigned, concurrently filed Bour et al. U.S. patent application entitled “STRUCTURE AND METHOD FOR INDEX-GUIDED BURIED HETEROSTRUCTURE AlGaInN LASER DIODES”(application Ser. No. ______, Attorney Reference No. D/99241Q) which is included by reference in its entirety.