Structures and methods for improving image quality of organic light emitting diodes integrated with color filters

Abstract

Structures and methods for improving image quality of organic light emitting diode integrated with color filters, the structures and methods mainly utilize a planarization layer to be coated on the color filter or to substitute for a passivation layer, or utilize a planarization layer to be coated on the color filter and utilize another planarization layer to substitute for a passivation layer to effectively reduce surface roughness of pixel electrode, therefore manufacturing yield and image quality of the organic light emitting diode are improved.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a structure diagram of a prior art organic light emitting diode integrated with a color filter.

FIG. 2 is a structure diagram of another prior art organic light emitting diode integrated with a color filter.

FIG. 3 is a structure diagram of the first embodiment of organic light emitting diode integrated with a color filter of the present invention.

FIG. 4 is a structure diagram of the second embodiment of organic light emitting diode integrated with a color filter of the present invention.

FIG. 5 is a structure diagram of the third embodiment of organic light emitting diode integrated with a color filter of the present invention.

Claims

1. A structure for improving image quality of an organic light emitting diode integrated with a color filter, comprising: a substrate;a poly-silicon island formed on the substrate;an insulating oxide layer formed on the substrate to cover the poly-silicon island;a gate metal layer corresponding to the location of the poly-silicon island formed on the insulating oxide layer;a dielectric layer formed on the insulating oxide layer to cover the gate metal layer, wherein multiple contact windows are formed on the dielectric layer and the contact windows penetrate the dielectric layer and the insulating oxide layer;a metal layer formed on the dielectric layer, wherein a part of the metal layer fills the contact windows and penetrates the dielectric layer and the insulating oxide layer to connect with the poly-silicon island;a color filter formed on the metal layer;a planarization layer coated on the color filter; anda pixel electrode layer formed on the planarization layer.

2. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 1, wherein the planarization layer is a photosensitive material and the photosensitive material is made of an organic material or an inorganic material.

3. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 1, wherein the dielectric layer is made of an organic material or an inorganic material.

4. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 1, wherein the substrate is made of plastic, glass, quartz, or silicon wafer.

5. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 1, wherein the structure is applied in a pixel structure of a N-type, P-type or CMOS thin film transistor.

6. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 5, wherein the thin film transistor is an amorphous silicon thin film transistor, microcrystalline silicone thin film transistor or poly-silicon thin film transistor.

7. A method for improving image quality of an organic light emitting diode integrated with a color filter, comprising: providing a substrate;forming a poly-silicon island on the substrate;forming an insulating oxide layer on the substrate to cover the poly-silicon island;forming a gate metal layer corresponding to the location of the poly-silicon island on the insulating oxide layer;forming a dielectric layer on the insulating oxide layer to cover the gate metal layer;forming multiple contact windows on the dielectric layer, wherein the contact windows penetrate the dielectric layer and the insulating oxide layer;forming a metal layer on the dielectric layer, wherein a part of the metal layer fills the contact windows and penetrates the dielectric layer and the insulating oxide layer to connect with the poly-silicon island;forming a color filter on the metal layer;coating a planarization layer on the color filter; andforming a transparent pixel electrode layer on the planarization layer.

8. The method for improving image quality of an organic light emitting diode integrated with a color filter of claim 7, wherein the planarization layer is a photosensitive material and the photosensitive material is made of an organic material or an inorganic material, the dielectric layer is made of an organic material or an inorganic material, and the substrate is made of plastic, glass, quartz, or silicon wafer.

9. The method for improving image quality of an organic light emitting diode integrated with a color filter of claim 7, wherein the method is applied in a pixel structure of a N-type, P-type or CMOS thin film transistor and the thin film transistor is an amorphous silicon thin film transistor, microcrystalline silicone thin film transistor or poly-silicon thin film transistor.

10. A structure for improving image quality of an organic light emitting diode integrated with a color filter, comprising: a substrate;a poly-silicon island formed on the substrate;an insulating oxide layer formed on the substrate to cover the poly-silicon island;a gate metal layer corresponding to the location of the poly-silicon island formed on the insulating oxide layer;a color filter formed on the insulating oxide layer to cover the gate metal layer, wherein multiple contact windows are formed on the color filter and the contact windows penetrate the color filter and the insulating oxide layer;a metal layer formed on the color filter, wherein a part of the metal layer fills the contact windows and penetrates the color filter and the insulating oxide layer to connect with the poly-silicon island;a planarization layer coated on the metal layer; anda pixel electrode layer formed on the planarization layer.

11. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 10, wherein the planarization layer is a photosensitive material and the photosensitive material is made of an organic material or an inorganic material.

12. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 10, wherein the substrate is made of plastic, glass, quartz, or silicon wafer.

13. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 10, wherein the structure is applied in a pixel structure of a N-type, P-type or CMOS thin film transistor.

14. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 13, wherein the thin film transistor is an amorphous silicon thin film transistor, microcrystalline silicone thin film transistor or poly-silicon thin film transistor.

15. A method for improving image quality of an organic light emitting diode integrated with a color filter, comprising: providing a substrate;forming a poly-silicon island on the substrate;forming an insulating oxide layer on the substrate to cover the poly-silicon island;forming a gate metal layer corresponding to the location of the poly-silicon island on the insulating oxide layer;forming a color filter on the insulating oxide layer to cover the gate metal layer;forming multiple contact windows on the color filter, wherein the contact windows penetrate the color filter and the insulating oxide layer;forming a metal layer on the color filter, wherein a part of the metal layer fills the contact windows and penetrates the color filter and the insulating oxide layer to connect with the poly-silicon island;coating a planarization layer on the metal layer; andforming a pixel electrode layer on the planarization layer.

16. The method for improving image quality of an organic light emitting diode integrated with a color filter of claim 15, wherein the planarization layer is a photosensitive material and the photosensitive material is made of an organic material or an inorganic material, the dielectric layer is made of an organic material or an inorganic material, and the substrate is made of plastic, glass, quartz, or silicon wafer.

17. The method for improving image quality of an organic light emitting diode integrated with a color filter of claim 15, wherein the method is applied in a pixel structure of a N-type, P-type or CMOS thin film transistor and the thin film transistor is an amorphous silicon thin film transistor, microcrystalline silicone thin film transistor or poly-silicon thin film transistor.

18. A structure for improving image quality of an organic light emitting diode integrated with a color filter, comprising: a substrate;a poly-silicon island formed on the substrate;an insulating oxide layer formed on the substrate to cover the poly-silicon island;a gate metal layer corresponding to the location of the poly-silicon island formed on the insulating oxide layer;a color filter formed on the insulating oxide layer to cover the gate metal layer;a first planarization layer coated on the color filter, wherein multiple contact windows are formed on the first planarization layer and the contact windows penetrate the first planarization layer, the color filter and the insulating oxide layer;a metal layer formed on the first planarization layer, wherein a part of the metal layer fills the contact windows and penetrates the first planarization layer, the color filter and the insulating oxide layer to connect with the poly-silicon island;a second planarization layer coated on the metal layer; anda pixel electrode layer formed on the second planarization layer.

19. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 18, wherein the first planarization layer and the second planarization layer are photosensitive materials and the photosensitive materials are made of an organic material or an inorganic material.

20. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 18, wherein the substrate is made of plastic, glass, quartz, or silicon wafer.

21. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 18, wherein the structure is applied in a pixel structure of a N-type, P-type or CMOS thin film transistor.

22. The structure for improving image quality of an organic light emitting diode integrated with a color filter of claim 21, wherein the thin film transistor is an amorphous silicon thin film transistor, microcrystalline silicone thin film transistor or poly-silicon thin film transistor.

23. A method for improving image quality of an organic light emitting diode integrated with a color filter, comprising: providing a substrate;forming a poly-silicon island on the substrate;forming an insulating oxide layer on the substrate to cover the poly-silicon island;forming a gate metal layer corresponding to the location of the poly-silicon island on the insulating oxide layer;forming a color filter on the insulating oxide layer to cover the gate metal layer;coating a first planarization layer on the color filter;forming multiple contact windows on the first planarization layer, wherein the contact windows penetrate the first planarization layer, the color filter and the insulating oxide layer;forming a metal layer on the first planarization layer, wherein a part of the metal layer fills the contact windows and penetrates the first planarization layer, the color filter and the insulating oxide layer to connect with the poly-silicon island;coating a second planarization layer on the metal layer; andforming a pixel electrode layer on the second planarization layer.

24. The method for improving image quality of an organic light emitting diode integrated with a color filter of claim 23, wherein the planarization layer is a photosensitive material and the photosensitive material is made of an organic material or an inorganic material, the dielectric layer is made of an organic material or an inorganic material, and the substrate is made of plastic, glass, quartz, or silicon wafer.

25. The method for improving image quality of an organic light emitting diode integrated with a color filter of claim 23, wherein the method is applied in a pixel structure of a N-type, P-type or CMOS thin film transistor and the thin film transistor is an amorphous silicon thin film transistor, microcrystalline silicone thin film transistor or poly-silicon thin film transistor.