Claims
- 1. A photolithography tool comprising:
a light source outputting light for illuminating a reticle; condenser optics positioned to receive light from said light source, said condenser optics positioned to direct an optical beam formed from said light through said reticle; and projection optics configured to form an image of said reticle onto a substrate, said projection optics including:
one or more cubic crystalline lens elements receiving said directed optical beam propagated through said reticle, said one or more cubic crystalline lens elements having intrinsic birefringence which introduces retardance aberrations into said optical beam; and at least one uniaxial birefringent optical element positioned along a common optical pathway with said reticle and said one or more cubic crystalline lens elements, said uniaxial birefringent optical element comprising a uniaxial birefringent medium having a single birefringent axis, said uniaxial birefringent optical element having birefringence which introduces retardance aberrations into said optical beam that are substantial conjugate to said retardance aberrations introduced by said one or more cubic crystalline lens elements.
- 2. The photolithography tool of claim 1, wherein said uniaxial birefringent optical element comprises an optical element having birefringence produced by form birefringence.
- 3. The photolithography tool of claim 1, wherein said uniaxial birefringent optical element comprises a form birefringent optical element having birefrigence produced by form birefringence, said form birefringent element comprising a multilayer structure comprising a plurality of alternating layers of high and low index.
- 4. The photolightography tool of claim 1, wherein said uniaxial birefringent optical element comprises a multilayer film formed on a lens.
- 5. The photolightography tool of claim 1, wherein said uniaxial birefringent optical element comprises a multilayer film formed on a plate.
- 6. The photolithography tool of claim 1, wherein said light source outputs light having a wavelength less than or equal to about 248 nm.
- 7. The photolithography tool of claim 1, wherein said light source outputs light having a wavelength less than or equal to about 193 nm.
- 8. The photolithography tool of claim 1, wherein said light source outputs light having a wavelength less than or equal to about 157 nm.
- 9. The photolithography tool of claim 1, wherein said light source comprises an excimer laser.
- 10. The photolithography tool of claim 1, wherein at least a first of the one or more cubic crystalline lens elements comprises a [111] cubic crystal having a [111] crystal lattice direction substantially parallel to an optical axis passing through said first optical element.
- 11. The photolithography tool of claim 1, wherein said one or more cubic crystalline lens elements comprise material selected from the group consisting of calcium fluoride, barium fluoride, lithium fluoride, and strontium fluoride.
- 12. The photolithography tool of claim 1, wherein said projection optics comprises a catadioptric system including at least one reflective surface.
- 13. The photolithography tool of claim 1, wherein said projection optics comprises a catadioptric system including at least one reflective surface, wherein said at least one reflective surfaces has an asymmetrical stress applied thereto to thereby reduce astigmatism, trefoil aberration, or quadrafoil aberration.
- 14. A method for forming a semiconductor device comprising:
propagating a beam of light through a reticle; forming an optical image of said reticle by directing said beam of light into a first portion of a projection lens comprising a plurality of [111] cubic crystalline optical elements having respective [111] cubic crystal axes aligned with a common optical axis through said [111] cubic crystalline optical elements, said beam of light becoming aberrated as a result of first retardance aberrations introduced by said first portion of said projection lens, said first retardance aberrations resulting from variation in phase with polarization, said [111] cubic crystalline optical elements being clocked so as to cause said first retardance aberration associated with light from an on-axis field point to be substantially circularly symmetrical about said optical axis at an exit pupil of said projection lens; and propagating said beam of light through a second portion of said projection lens, said second portion of said projection lens including one or more optical elements, said second portion of said projection lens selected to introduce second retardation aberrations resulting from variation in phase with polarization, said one or more optical elements causing said second retardance aberrations associated with light from an on-axis field point that propagate through said exit pupil of said projection lens to be substantially circularly symmetric about said optical axis and to substantially counter said first polarization aberrations associated with said on-axis field point at said exit pupil, and positioning a substrate, such that said optical image formed by said beam of light output by said projection lens, is formed on said substrate.
- 15. The method of claim 14, further comprising forming a photosensitive coating on said substrate.
- 16. The method of claim 15, further comprising developing said photosensitive coating after exposure to said beam of light output by said projection optics.
- 17. The method of claim 15, further comprising etching said photosensitive coating after exposing said photosensitive film to thereby produce a pattern on said substrate similar to said reticle.
- 18. The method of claim 15, further comprising depositing a film on said substrate prior to forming said photosensitive coating thereon, such that said photosensitive coating is formed on said film.
- 19. The method of claim 18, further comprising developing said photosensitive coating after exposure to said beam of light output by said projection optics.
- 20. The method of claim 19, further comprising etching said photosensitive film after exposing said photosensitive film to thereby produce a pattern in said film substantially corresponding to said reticle.
- 21. A semiconductor device formed according to a process comprising:
depositing a photosensitive material over a semiconductor wafer; illuminating a mask pattern; transmitting a beam of light along an optical path from said mask pattern through a plurality of optical elements, said optical elements having radial and tangential eigenpolarization states and said beam having first and second orthogonal polarization states each coinciding with said one of said radial and tangential eigenpolarization states such that said first polarization state is phase delay with respect to said second polarization state; transmitting said beam of light, through at least one birefringent element having a single uniaxial birefringent axis, said at least one birefringent element having radial and tangential eigenpolarization states such that said second polarization state is phase delayed with respect to said first polarization state a substantially equal amount to reduce the relative phase difference between said first and second orthogonal polarization states of said beam of light; receiving said beam of light after said beam of light is transmitted through said at least one birefringent element, and projecting said beam of light onto said photosensitive material over said semiconductor wafer; removing portions of photosensitive material to form a pattern in said photosensitive material that resembles said mask pattern; and processing said semiconductor wafer having said patterned photosensitive material thereon.
- 22. The semiconductor device of claim 21, wherein said photosensitive material comprises photoresist.
- 23. The semiconductor device of claim 21, wherein said processing said semiconductor wafer comprises etching.
- 24. The semiconductor device of claim 21, wherein said processing said semiconductor wafer comprises ion implanting.
- 25. The semiconductor device of claim 21, further comprising depositing at least one layer of material on said semiconductor wafer.
- 26. The semiconductor device of claim 21, wherein said semiconductor device comprises a semiconductor integrated circuit.
- 27. A photolithography tool comprising:
a light source outputting light for illuminating a reticle; condenser optics positioned to receive light from said light source, said condenser optics positioned to direct an optical beam formed from said light source through said reticle; and projection optics configured to form an image of said reticle onto a substrate, wherein said condenser optics include:
one or more cubic crystalline optical elements receiving said light from said light source, said one or more cubic crystalline optical elements having intrinsic birefringence which introduces retardance into said optical beam, and a form birefringent optical element having form birefringence, said form birefringent optical element positioned along a common optical pathway through said one or more cubic crystalline optical elements, the form birefringent optical element introducing retardance that substantially offsets said retardance imparted on said light transmitted through said one or more cubic crystalline optical elements.
- 28. A photolithography tool comprising:
a light source outputting light for illuminating a reticle; condenser optics positioned to receive light from said light source, said condenser optics positioned to direct an optical beam formed from said light through said reticle; and projection optics configured to form an image of said reticle onto a substrate, said condenser optics including:
one or more cubic crystalline lens elements receiving said light from said light source, said one or more cubic crystalline lens elements having intrinsic birefringence which introduces retardance aberrations into said optical beam; and at least one uniaxial birefringent optical element comprising a uniaxial birefringent medium, said uniaxial birefringent optical element having birefringence which introduces retardance aberrations that are substantial conjugate to said retardance aberrations introduced by said one or more cubic crystalline lens elements.
PRIORITY APPLICATION
[0001] This application claims the benefit of priority under 35 U.S.C. § 119(e) to U.S. Provisional Patent Application No. ______ (Docket No. OPTRES.007PR2), filed Dec. 11, 2002 and entitled “Reduced Aberration in Optical Systems” as well as U.S. Provisional Patent Application No. 60/405,853, filed Aug. 22, 2002 and entitled “New Method of [111] Compensation Using Stress”.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60432688 |
Dec 2002 |
US |
|
60405853 |
Aug 2002 |
US |