NSF Award
9961027
This Small Business Technology Transfer Phase I Project will develop a novel integrated process for manufacturing and interconnecting a 3-D array of transistors made of carbon nanotubes, suitable for large-scale manufacturing. This large-scale, low-cost approach will provide extremely fast, low-power, ultra-high-density logic and memory devices, which operate at room temperature. The fundamental enabling innovation of the proposed process involves introducing controlled discontinuities in the structure of the carbon nanotube. We estimate that our fabrication technology will enable device densities of 10^12 per cm^2, limited only by lateral interconnect technology. A novel interconnect technology will also be investigated to provide device densities to 10^14 per cm^2.
