NSF Award
9903115
This Small Business Technology Transfer Research (STTR) Phase II project wi I I refine technology for printing gate lines and data lines for active matrices of Thin Film Transistors (TFTs), which were shown to be feasible in Phase I. The Phase II program aims to demonstrate materials and processes to replace most or all of the expensive photolithographic patterning steps in creating active matrices of TFTs by low-cost printing steps. A further objective is to replace low-conductivity evaporated metallization by high conductivity printed silver or copper metallization to make possible truly large displays. A further objective is to investigate materials to replace sputtered Indium Tin Oxide (ITO) pixels with printed ITO. Materials and processes will be developed to electrostatically print lines of the required thickness and length. Gate and data lines for a one-meter diagonal display will be printed on appropriate substrates, and their properties will be evaluated and optimized. Materials will be developed to print ITO. Laboratory prototype equipment for the deposition and printing steps in the process will be constructed and demonstrated.<br/> Successful results in this program can greatly reduce costs and scale-up in size for any equipment using an array of TFTS. This includes active matrix liquid crystal displays and other display technologies, x-ray detector arrays, faxes and scanners.
