The present invention relates to a capacitive micro force sensor.
Multiple methods for measuring force from the nanonewton (10−9N) to millinewton (10−3N) range exist such as atomic force microscopes, microscales, piezoresistive cantilevers and capacitive force sensors. These systems have been successfully used in different application fields including material science, microsystem development, nanotechnology, biological research, medical research, thin film characterization and quality control of miniaturized systems. Using these sensors in combination with a precise positioning device such as a micromanipulator, allows building compression and tensile testing systems for mechanical testing at the microscale.
Capacitance is a measure of the electrical charge between two conductors separated by an air gap. A load applied to the sensor causes a deflection. As the conductors are moved closer to or farther from one another, the air gap changes, and so does the capacitance. The principle of capacitive micro force sensing is simple and effective and features an excellent sensitivity. MEMS fabrication technology allows the efficient fabrication of such sensors [1]. Due to the single-crystalline silicon structure of the sensor, the results are highly repeatable and the sensors are less likely to degrade over time. Capacitive MEMS force sensor designs are detailed in [1-3] and provided as a commercial product [4].
Most mechanical tests (compression testing, tensile testing, flexure testing, shear testing) of samples in the sub-mm size scale are performed under the observation with an optical microscope or a scanning electron microscope as shown in
Documents [1, 2] describe a comb drive based capacitive sensor design featuring a sensor probe which is overhanging the substrate on one side. The direction in which the prior art force sensor 18 is sensitive is parallel to the sensor probe as shown in
However, measurements in horizontal (a-b-plane) or vertical direction (c-axis) are often times not possible due to the shape of the substrate and the sensor chip geometry. For some applications capacitive multi-axis force sensors according to [3,7] are used to have a higher flexibility and decompose force vectors into the a-, b- and c-axis components. However, multi-axis force sensors are difficult to calibrate at the sub-Millinewton range and therefore highly expensive.
Prior art sensor designs described in [1]-[9] do not feature a probe (2) which is overhanging the substrate (7) on two sides (8,9), limiting the number of applications for which the sensor can be used due to geometrical limitations.
Simply mounting the prior art MEMS sensor chips rotated such that the sensor probe 2 is overhanging the substrate 7 one side does not solve the problem since the substrate 7 and the whole MEMS sensor chip are inside the line of sight 15 and are therefore blocking a large part of the microscope view. Also, this configuration is not suitable since the substrate touches the microscope lens 12 making the measurement impossible.
For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
a depicts a depicts a prior art sensor by Sun Yu et al.;
b depicts a capacitive MEMS sensor with some geometrical indications;
a depicts the mechanical testing using prior art sensors;
b depicts the mechanical testing using the sensor design according to the invention;
a depicts a prior art sensor;
b depicts an embodiment of the invention; and
c depicts an alternative embodiment of the invention.
where ls is the length of the sensor's flexures, E the Young's Modulus of silicon, t the thickness of the flexures, w the width of the flexures of the sensor and dx the deflection. The electrical capacitance C1 and C2 of the comb drive formed between the movable, common electrode 24 and the non-movable electrode 25 is given by
where n is the number of comb drive fingers, lc the length of the comb drive fingers, d1 the small gap of the capacitor electrodes and d2 the spacing between a capacitor electrode pair. The deflection dx changes the capacitances to
The change in capacitance is converted into an output voltage by the readout electronics. The readout electronics with the interface IC 11 is located directly in the sensor package 20. Locating the interface IC as close as possible to the MEMS sensor chip 17 is important to minimize the amount of parasitic capacitance. Parasitic capacitance would reduce the quality of the output signal of the interface IC 11. The range, sensitivity and resolution of the sensing system are easily varied by changing the length ls of the flexures.
The sensor package consists of the MEMS sensor chip 17, the interface IC 11 and the substrate 7. The MEMS fabrication process is detailed in the documents [1, 6, 7 and 9]. Silicon or silicon-on-insulator wafers are used as a base material. However, fabricating the sensor chip 17 using a metal by electroplating or laser-cutting may also be possible. The fabrication process described in documents [6, 7] enables the sensor probe to be electrically insulated from the rest of the MEMS chip. Therefore, the probe may be used for simultaneous electrical measurements or for applying a current or electrical signal to the sample 14.
In the state of the art sensor design described in [1], the movable, common electrode 24 is located in the middle between the non-movable electrodes 25, forming a differential capacitive comb drive as shown in
After MEMS chip fabrication, the MEMS sensor chip 17 is mounted onto a substrate 7, which is normally a printed circuit board 7 which also includes the interface IC and the rest of the readout electronics 11. The sensor chip is located at the upper edge of the substrate 7 (substrate edge 8) and at the right or the left edge (substrate edge 9). The sensor is wire-bonded to the substrate. The sensor probe 2 is designed such that its probe tip 1 is overhanging two sides 8, 9 of the substrate 7 by the distance px and py, respectively as shown in
In most cases the capacitive MEMS force sensors are used in combination with a precise micropositioning device, such as a micromanipulator. The sensor can be mounted in different, adjustable orientations as shown in
For vertical measurements the sensitive direction 10 of the sensor is aligned with the c-axis. The substrate 7 may have a cutout 21 such that the sensor can also be used in the limited space available underneath the microscope lens 12 and above the sample holder 13. For measurements in the a-b-plane the sensor is mounted at an angle β as shown
Comparison to Existing Sensor Designs
a . 5c compares the prior art sensor design 18 with the sensor proposed according to the invention. The sensitive direction of the prior art sensor 22 is parallel to the sensor probe as shown in
When looking at
LIST OF USED REFERENCE NUMERALS AND ACRONYMS
LIST OF CITED DOCUMENTS
Number | Date | Country | Kind |
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11183816 | Oct 2011 | EP | regional |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2012/068539 | 9/20/2012 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2013/050252 | 4/11/2013 | WO | A |
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7337656 | Shirakawabe et al. | Mar 2008 | B2 |
7421899 | Workman et al. | Sep 2008 | B2 |
20040139808 | Keller | Jul 2004 | A1 |
20070251328 | Selvan et al. | Nov 2007 | A1 |
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4107605 | Apr 1994 | DE |
2005121812 | Dec 2005 | WO |
2007147239 | Dec 2007 | WO |
2010112242 | Oct 2010 | WO |
Entry |
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Number | Date | Country | |
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20140230576 A1 | Aug 2014 | US |