1. Field of the Invention
The present invention relates to a liquid crystal display used for a display section of an electronic apparatus and a substrate for a liquid crystal display used for such a display.
2. Description of the Related Art
In general, an active matrix liquid crystal display has a TFT substrate on which a thin film transistor (TFT) is formed at each pixel as a switching element and an opposite substrate on which color filters (CF) are formed.
The TFT substrate has gate bus lines and drain bus lines that intersect each other with an insulation film interposed therebetween. TFTs are formed in the vicinity of the positions where the bus lines intersect. A pixel electrode is formed at each of a plurality of pixel regions that are arranged in the form of a matrix.
For example, the TFT substrate is patterned using the separate exposure method utilizing a stepper. According to the separate exposure method, a display area in which a repetitive pattern of TFT arrays is formed is divided into a plurality of exposure areas, and each of the exposure areas is sequentially exposed using the same mask. In a boundary between two adjoining exposure areas, edges of the exposure areas overlap each other. However, when a misalignment occurs between shots at the time of the separate exposure (a misalignment in an X-Y direction or a misalignment in a rotating direction), either of the shots exposes a greater area in the boundary region. As a result, the width of a wiring or electrode formed at the boundary becomes small when the photo-resist used is a positive resist which dissolves during development in exposed regions thereof. Conversely, the width of a wiring or electrode formed at the boundary becomes great when a negative resist is used which survives during development in exposed regions thereof.
Pixel electrodes 116 are formed in regions surrounded by the gate bus lines 112 and the drain bus lines 114 on the overcoat layer 134. The regions where the pixel electrodes 116 are formed serve as pixel regions. TFTs 120 are formed in the vicinity of positions where the gate bus lines 112 and the drain bus lines 114 intersect. Gate electrodes of the TFTs 120 are electrically connected to the gate bus lines 112. Drain electrodes 121 of the TFTs 120 are electrically connected to the drain bus lines 114. Source electrodes 122 of the TFTs 120 are electrically connected to the pixel electrodes 116 through contact holes 124.
A plurality of storage capacitor bus lines 118 extending across the pixel regions are formed on the TFT substrate 102 in parallel with the gate bus lines 112. A storage capacitor electrode (intermediate electrode) 119 is formed on the storage capacitor bus line 118 in each of the pixel regions. The storage capacitor electrodes 119 are electrically connected to the pixel electrodes 116 through contact holes 126.
Predetermined parasitic capacities are generated between a drain bus line 114 and pixel electrodes 116 that are formed in the vicinity of edges of the drain bus line 114 on both sides thereof with the protective film 132 and the overcoat layer 134 that are dielectric layers interposed between them. Similarly, predetermined parasitic capacities are generated between a gate bus line 112 and pixel electrodes 116 that are formed in the vicinity of edges of the gate bus line 112 on both sides thereof with the insulation film 130, the protective film 132 and the overcoat layer 134 that are dielectric layers interposed between them.
Such a difference between the distances between the pixel electrodes 116 and the drain bus line 114 result in a difference between parasitic capacities generated between the pixel electrodes 116 and the drain bus line 114. When there is a region having a parasitic capacity different from others in the display area, the region will have different display characteristics. For example, when there is a difference between parasitic capacities at a boundary between two exposure areas adjacent to each other in the horizontal direction of the display screen, the boundary will be visually perceived as a display irregularity in the form of a straight line extending in the vertical direction of the display screen. When each exposure area has a different parasitic capacity, each exposure area has different display characteristics, which will be visually perceived as display irregularities.
One method for solving the above-described problem is to form the overcoat layer 134 made of a photosensitive resin with a greater thickness.
Since the pixel electrodes 116 can be formed such that they overlap the drain bus lines 114 and gate bus lines 112 in this configuration, an improved aperture ratio can be achieved (for example, see Articles 1 and 2 described below). Further, the pixel electrodes 116 can be formed such that they cover the drain bus lines 114, gate bus lines 112 and TFTs 120 (for example, see Article 3 described below).
(Reference Documents)
Since a common resin has a relative dielectric constant in the range from 3 to 4, the overcoat layer 134 must be formed with a great thickness in the range from 3 to 5 μm in order that the parasitic capacities generated will be negligibly small. As a result, a greater exposure energy and a longer exposure time is required when contact holes are formed by providing openings in the overcoat layer 134. This results in a problem in that processes for manufacturing the TFT substrate 102 become complicated to reduce productivity. Problems also arise in that the resolution of patterning is reduced and in that undeveloped regions can remain.
In the case of the liquid crystal display having alignment regulating structures, since the aperture ratio is reduced by the linear protrusions 141 formed in the pixel regions, a problem arises in that the display luminance of the liquid crystal display is reduced. The luminance of a backlight must be increased to maintain the display luminance, which results in a problem in that the power consumption of the liquid crystal display is increased.
It is an object of the invention to provide a liquid crystal display which can be manufactured through simplified processes and which can provide high display quality and a liquid crystal display substrate used for the same.
The above object is achieved by a substrate for a liquid crystal display, characterized in that it includes a base substrate that sandwiches a liquid crystal in combination with an opposite substrate provided opposite to the same, first and second bus lines formed on the base substrate such that they intersect each other with an insulation film interposed therebetween, and a pixel electrode provided so as to cover at least either of the first and second bus lines with a dielectric layer interposed therebetween and forming a parasitic capacity between the first or second bus line and itself.
[First Embodiment]
A description will now be made with reference to FIGS. 1 to 7 on a substrate for a liquid crystal display and a liquid crystal display having the same according to an embodiment of the invention.
The TFT substrate 2 is provided with a gate bus line driving circuit 80 having driver ICs for driving the plurality of gate bus lines mounted thereon and a drain bus line driving circuit 82 having driver ICs for driving the plurality of drain bus lines mounted thereon. The driving circuits 80 and 82 output scan signals or data signals to predetermined gate bus lines or drain bus lines based on predetermined signals output by a control circuit 84.
A polarizer 87 is applied to a surface of the TFT substrate 2 opposite to a surface on which elements are formed. For example, a backlight unit 88 constituted by a linear primary light source and a planar light guide plate is provided on the side of the polarizer 87 opposite to the TFT substrate 2. A polarizer 86 is applied to a surf ace of the opposite substrate 4 that is opposite to a surface on which a common electrode is formed.
CF resin layers in any of red (R), green (G) and (B) are formed on the protective layer 32. An overcoat layer 34 that is a resin insulation film made of a transparent photosensitive resin is formed on the CF resin layers R, G and B. Pixel electrodes 16 made of a light-transmitting electrode material such as ITO (indium tin oxide) is formed such that they cover the gate bus lines 12 and the drain bus lines 14. The pixel electrodes 16 are provided such that they overlap the drain bus lines 14 substantially in the middle thereof when viewed in a direction perpendicular to the substrate surface. The regions where the pixel electrodes 16 are formed serve as pixel regions. Predetermined parasitic capacities are generated between the pixel electrodes 16 and the gate bus lines 12 or the drain bus lines 14.
TFTs 20 are formed in the vicinity of positions where the gate bus lines 12 and the drain bus lines 14 intersect. Gate electrodes of the TFTs 20 are electrically connected to the gate bus lines 12. Drain electrodes 21 of the TFTs 20 are electrically connected to the drain bus lines 14. Source electrodes 22 of the TFTs 20 are electrically connected to the pixel electrodes 16 through contact holes 24 formed by providing openings in the overcoat layer 34, the CF layers and the protective film 32 on the source electrodes 22.
A plurality of storage capacitor bus lines 18 are formed on the TFT substrate 2 in parallel with the gate bus lines 12. Storage capacitor electrodes 19 are formed on the storage capacitor bus lines 18. Two storage capacitor electrodes 19 are formed in each of the pixel regions, and one each of them is provided on both sides of a drain bus line 14. The storage capacitor electrodes 19 are electrically connected to the pixel electrodes 16 through contact holes 26 formed by providing openings in the overcoat layer 34, the CF layers and the protective film 32 on the storage capacitor electrodes 19.
In the present embodiment, the pixel electrodes 16 are formed such that they cover the gate bus lines 12 and the drain bus lines 14. Therefore, even when there is a relative misalignment between a pixel electrode 16 and a drain bus line 14, the distance between the pixel electrode 16 and the drain bus line 14 will not change. Thus, the parasitic capacity will not change. Even when a pixel electrode 16 and a drain bus line 14 are formed with different widths at a boundary of exposure areas because of a misalignment at each shot of exposure, there will be no change in the distance between the pixel electrode 16 and the drain bus line 14. Any change in the parasitic capacity is thus prevented.
A description will now be made with reference to FIGS. 4 to 7 on a method of manufacturing a substrate for a liquid crystal display according to the present embodiment.
Next, for example, a silicon nitride film (SiN film) is formed on the gate bus lines 12 and the storage capacitor bus lines 18 throughout the substrate to provide an insulation film 30. Active semiconductor layers 31 made of, for example, amorphous silicon (a-Si) are then formed on the insulation film 30. Channel protection films 23 constituted by, for example, SiN films are formed on the active semiconductor layers 31. The channel protection films 23 are formed on a self-alignment basis through back exposure using the gate bus lines12 as masks. Next, n+a-Si films and metal layers are formed in that order on the channel protection films 23 throughout the substrate and are patterned to form drain electrodes 21 and source electrodes 22 of the TFTs 20. At the same time, drain bus lines 14 and storage capacitor electrodes 19 are formed. For example, a single layer of Cr or an Al/Ti laminated layer, Al/Mo/MoN laminated layer or Ti/Al/Ti laminated layer or the like is used as the metal layer. For example, a SiN film is then formed on the drain electrodes 21, the source electrodes 22, the drain bus lines 14, and the storage capacitor electrodes 19 throughout the substrate to provide a protective film 32. Next, openings are provided in the protective film 32 on the source electrodes 22 to form contact holes 24′, and openings are provided in the protective film 32 on the storage capacitor electrodes 19 to form contact holes 26′.
Next, CF layers R, G and B are sequentially formed on the protective film 32 as shown in
[Second Embodiment]
A description will now be made with reference to FIGS. 8 to 10 on a substrate for a liquid crystal display according to a second embodiment of the invention.
In the present embodiment, the protrusions 40 are formed in regions that do not contribute to the numerical aperture such as the positions where the gate bus lines 12 and the drain bus lines 14 intersect and the positions where the storage capacitor bus lines 18 and the drain bus lines 14 intersect. This makes it possible to achieve the same advantages as those of the first embodiment and to provide a liquid crystal display having a wide viewing angle without reducing the aperture ratio. The protrusions 40 may be formed on an opposite substrate 4.
Since the liquid crystal display of the present embodiment is in the normally black mode, there is no need for blocking light between pixel regions adjacent to each other. Since it is therefore not necessary to form a light-blocking film on the opposite substrate 4, the aperture ratio can be improved further. Since high accuracy of alignment is not required in combining the substrates 2 and 4, manufacturing processes can be simplified.
A description will now be made with reference to
[Third Embodiment]
A description will now be made with reference to FIGS. 11 to 18B on a substrate for a liquid crystal display according to a third embodiment of the invention.
The transparent electrodes 15 are formed such that they cover the drain bus lines 14. The transparent electrodes 15 are electrically connected to the source electrodes 22 of the TFTs 20 through contact holes 25.
In the present embodiment, the same advantages as those in the first embodiment are achieved, and the transparent electrodes 15 and the reflective electrodes 17 can be efficiently provided to achieve an improved aperture ratio by forming the reflective electrodes 17 such that they cover the gate bus lines 12, the storage capacitor bus lines 18 and the TFTs 20.
A description will now be then made with reference to FIGS. 13 to 16 on a method of manufacturing a substrate for a liquid crystal display according to the present embodiment. FIGS. 13 and 15 show the method of manufacturing a TFT substrate.
For example, a SiN film is then formed on the gate bus lines 12 and the storage capacitor bus lines 18 throughout the substrate to provide an insulation film 30. Next, active semiconductor layers 31 made of, for example, a-Si is formed on the insulation film 30. Next, channel protection films 23 constituted by, for example, SiN films are formed on the active semiconductor layer 31. Next, n+a-Si films and metal films are formed in that order on the channel protection films 23 throughout the substrate and patterned to form drain electrodes 21 and source electrodes 22 of TFTs 20. At the same time, drain bus lines 14 and storage capacitor electrodes 19 are formed. For example, a SiN film is then formed on the drain electrodes 21, the source electrodes 22, the drain bus lines 14 and the storage capacitor electrodes 19 throughout the substrate to provide a protective film 32. For example, a photosensitive resin is then applied to the protective film 32 throughout the substrate to form an overcoat layer 34. Next, openings are provided in the overcoat layer 34 and the protective film 32 on the source electrodes 22 to form contact holes 25, and openings are provided in the overcoat layer 34 and the protective film 32 on the storage capacitor electrodes 19 to form contact holes 26.
Next, as shown in
A film of a light-reflective electrode material is then formed on the transparent electrodes 15 throughout the substrate and patterned to form reflective electrodes 17 such that they cover the gate bus lines 12, the storage capacitor bus lines 18 and the drain bus lines 14. A reflective electrode 17 is formed such that a part of the same overlaps a part of a transparent electrode 15, and the electrodes 16 and 17 in one pixel are electrically connected to each other. The reflective electrodes 17 are electrically connected to the source electrodes 22 through the contact holes 25 and are electrically connected to the storage capacitor electrodes 19 through the contact holes 26. A TFT substrate 2 as shown in
A description will now be made with reference to FIGS. 17 to 18B on a modification of the substrate for a liquid crystal display according to the present embodiment.
The reflective electrodes 17a and 17b are provided such that they sandwich a drain bus line 14 with predetermined gaps left therebetween when viewed in a direction perpendicular to a surface of the substrate. The reflective electrodes 17a and 17b are formed such that they cover storage capacitor bus lines 18. The reflective electrodes 17a and 17b are electrically connected to each other through a connecting electrode 61. The connecting electrodes 61 are formed of the same material as that of the reflective electrodes 17a and 17b. The reflective electrodes 17b are electrically connected to source electrodes 22 of TFTs 20 through contact holes 24 formed by providing openings in an overcoat layer 34 and a protective film 32 on the reflective electrodes 17b.
Although not shown, two storage capacitor electrodes 19 are formed on the storage capacitor bus line 18 in each pixel region, the electrodes 19 being provided such that they sandwich the drain bus line 14 with predetermined gaps left therebetween. The reflective electrode 17a is electrically connected to one of the storage capacitor electrodes 19 through a contact hole 54 formed by providing an opening in the overcoat layer 34 and the protective film 32 on the storage capacitor electrode 19. The reflective electrode 17b is electrically connected to the other storage capacitor electrode 19 through a contact hole 55 formed by providing an opening in the overcoat layer 34 and the protective film 32 on the storage capacitor electrode 19.
The transparent electrodes 15a are formed such that they cover the storage capacitor bus lines 18 and are connected to the reflective electrodes 17a on the storage capacitor bus lines 18. The transparent electrodes 15b are electrically connected to the transparent electrodes 15a through connecting electrodes 60. The present modification provides the same advantages as those of the above-described embodiment.
[Fourth Embodiment]
A description will now be made with reference to
The transparent electrodes 15a are formed such that they cover drain bus lines 14 and are electrically connected to source electrodes 22 of TFTs 20 through contact holes 24. The reflective electrodes 17a are formed such that they cover storage capacitor bus lines 18 and are electrically connected to the transparent electrodes 15a through contact holes 50. The reflective electrodes 17b are formed such that they cover the storage capacitor bus lines 18 and are electrically connected to the transparent electrodes 15a through contact holes 51. The transparent electrodes 15b are formed such that they cover the drain bus lines 14. The transparent electrodes 15b are electrically connected to the reflective electrodes 17a through contact holes 52 and are electrically connected to the reflective electrodes 17b through contact holes 53.
The reflective electrodes 17a and 17b are formed of the same material as that of the drain bus lines 14 and are provided such that they sandwich the drain bus lines 14 with predetermined gaps left therebetween. The reflective electrodes 17a and 17b are provided opposite to the storage capacitor bus lines 18 with an insulation film 30 that are dielectric layers interposed therebetween and function as electrodes for a storage capacitor formed in each of pixel regions.
A description will now be made with reference to
Next, a film of a light-transmitting electrode material such as ITO is formed on the overcoat layer 34 throughout the substrate and patterned to form transparent electrodes 15a and 15b such that they cover the drain bus lines 14. The transparent electrodes 15a are electrically connected to the reflective electrodes 17a through the contact holes 50 and are electrically connected to the reflective electrodes 17b through the contact holes 51. The transparent electrodes 15b are electrically connected to the reflective electrodes 17a through the contact holes 52 and are electrically connected to the reflective electrodes 17b through the contact holes 53. A TFT substrate 2 as shown in
In the present embodiment, the reflective electrodes 17a and 17b are formed of the same material as that of the drain bus lines 14 at the same time. Therefore, the present embodiment provides the same advantages as those of the first embodiment and makes it possible to manufacture a TFT substrate 2 for a transflective liquid crystal display using photo-masks in the same quantity as that for a TFT substrate 2 used in a common transmissive liquid crystal display.
[Fifth Embodiment]
A description will now be made with reference to
The pixel electrodes 16a and 16b are formed such that they cover gate bus lines 12 and storage capacitor bus lines 18. The pixel electrodes 16a and 16b are provided such that they sandwich the drain bus lines 14 with predetermined gap left therebetween when viewed in the direction perpendicular to a surface of the substrate. The pixel electrodes 16a and 16b are electrically connected to each other through two connecting electrodes 60. The connecting electrodes 60 are formed of the same material as that of the pixel electrodes 16a and 16b.
Two storage capacitor electrodes 19a and 19b are formed on the storage capacitor bus line 18 in each pixel region. The storage capacitor electrodes 19a and 19b are provided on both sides of respective drain bus lines 14. The storage capacitor electrodes 19a are electrically connected to the pixel electrodes 16a through contact holes 26a formed by providing openings in an overcoat layer 34 and a protective film 32 (both of which are not shown in
A source electrode 22 of a TFT 20 is connected through a connection wiring 62 to the storage capacitor electrode 19b in the adjacent pixel located below the same in
In the present embodiment, the pixel electrodes 16a and 16b are formed such that they cover the TFT 20 and the gate bus line 12 for driving the adjacent pixel that is located below in the figure. So, this makes it possible to achieve the same advantages as those of the first embodiment. When a predetermined potential is written in the pixel electrodes 16a and 16b, no voltage is applied to the gate bus lines 12 located below the pixel electrodes 16a and 16b, and a voltage is applied to the adjacent gate bus lines 12 located above them. Since the pixel potential is not affected by electric fields originating from the gate bus lines 12, it is possible to prevent the occurrence of flickers or a luminance gradient or the like on a display screen.
The invention is not limited to the above-described embodiments and may be modified in various ways.
For example, while substrates for bottom gate type liquid crystal displays are referred to as examples in the above-described embodiments, the invention is not limited to them and may be applied to substrates for top gate type liquid crystal displays.
While substrates for channel-protected liquid crystal displays are referred to as examples in the above-described embodiments, the invention is not limited to them and may be applied to substrates for channel-etched liquid crystal displays.
In the above-described embodiment, an overcoat layer 34 is formed on a protective film 32 to reduce parasitic capacities. According to the invention, however, substantially equal parasitic capacities are generated between gate bus lines 12 or drain bus lines 14 and pixel electrodes 16 (that include transparent electrodes 15 and reflective electrodes 17) at all pixels in a display area, and there is no variation of the parasitic capacity attributable to misalignment. Therefore, no display irregularity is visually perceived even when the overcoat 34 is not formed.
As described above, the invention makes it possible to provide a liquid crystal display that can be manufactured through simplified manufacturing processes and that can provide high display quality.
Number | Date | Country | Kind |
---|---|---|---|
2002-253823 | Aug 2002 | JP | national |