Substrate for magnetic recording medium, fabrication method thereof, and magnetic recording medium

Abstract

A soft magnetic under layer (SUL) is formed on a non-magnetic substrate by an electroless plating method. The SUL formed by plating is subjected to magnetic field heat treatment on conditions that the heat treatment temperature is 150° C. to 350° C., a magnetic field applied to the substrate has a strength of 50 oersteds (Oe) or more, and the treatment time is selected within a range of five minutes to ten hours. Through the magnetic field heat treatment, magnetic anisotropy is obtained with a difference (δH=Hd−Hc) of 5 oersteds (Oe) or more in terms of absolute value between a magnetization saturation magnetic field strength (Hd) in the in-plane radial direction of a soft magnetic film and a magnetization saturation magnetic field strength (Hc) in the in-plane circumferential direction of the soft magnetic film, and the magnetic anisotropy is symmetric with respect to the axis of the substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view schematically showing a typical multilayer structure of a hard disk of a longitudinal magnetic recording method;

FIG. 2 is a sectional view schematically showing a basic layered structure of a perpendicular two-layer magnetic recording medium in which a recording layer for perpendicular magnetic recording is provided on a soft magnetic under layer;

FIG. 3 is a sectional view schematically showing a basic layered structure of a perpendicular two-layer magnetic recording medium in which a Si substrate is used as a non-magnetic substrate and a base plating layer (nucleation film) is provided;

FIG. 4 is a conceptual rendering showing magnetization curves in the in-plane circumferential direction and radial direction, the conceptual rendering explaining the meaning of the magnetic anisotropy of the soft magnetic under layer provided on a substrate for a magnetic recording medium of the present invention;

FIGS. 5A and 5B illustrate a state of the application of a magnetic field usable in magnetic field heat treatment;

FIGS. 6A and 6B explain the outline of the configuration of a magnet field generator used for applying a magnetic field in an example, FIG. 6A is a top view, FIG. 6B is a sectional view taken along line b-b′ of FIG. 6A; and

FIG. 7 illustrates the evaluation results of the magnetic anisotropy of the soft magnetic under layer, the magnetic anisotropy being evaluated in the plane of the substrate after the heat treatment for stabilizing the magnetic properties is performed on a soft magnetic under layer of Example 2.

Claims

1. A substrate for a magnetic recording medium, the substrate comprising a non-magnetic substrate shaped like a disk having a diameter of 90 mm or less and a soft magnetic under layer provided on a major surface of the substrate,wherein the soft magnetic under layer is a plating layer mainly composed of at least two elements selected from the group consisting of Co, Ni, and Fe,the plating layer has magnetic anisotropy provided by magnetic field heat treatment after film formation, the magnetic anisotropy is obtained with a difference (δH=Hd−Hc) of 5 oersteds (Oe) or more in terms of absolute value between a magnetization saturation magnetic field strength (Hd) in an in-plane radial direction and a magnetization saturation magnetic field strength (Hc) in an in-plane circumferential direction, and the magnetic anisotropy is symmetric with respect to an axis of the substrate.

2. A magnetic recording medium comprising a magnetic recording layer on the soft magnetic under layer of the substrate for a magnetic recording medium according claim 1.

3. The substrate for a magnetic recording medium according to claim 1, wherein the non-magnetic substrate is a silicon wafer and a base plating layer made of Ni or NiP is provided between the major surface of the substrate and the plating layer.

4. A magnetic recording medium comprising a magnetic recording layer on the soft magnetic under layer of the substrate for a magnetic recording medium according claim 3.

5. The substrate for a magnetic recording medium according to claim 1, wherein the plating layer contains at least one element selected from the group consisting of B, C, P and S.

6. A magnetic recording medium comprising a magnetic recording layer on the soft magnetic under layer of the substrate for a magnetic recording medium according claim 5.

7. The substrate for a magnetic recording medium according to claim 5, wherein the non-magnetic substrate is a silicon wafer and a base plating layer made of Ni or NiP is provided between the major surface of the substrate and the plating layer.

8. A magnetic recording medium comprising a magnetic recording layer on the soft magnetic under layer of the substrate for a magnetic recording medium according claim 7.

9. A method of fabricating a substrate for a magnetic recording medium, the method comprising:an electroless plating step of forming a soft magnetic film on a major surface of a non-magnetic substrate shaped like a disk having a diameter of 90 mm or less, and a step of performing magnetic field heat treatment on the soft magnetic film formed by the electroless plating step,wherein in the electroless plating step, the soft magnetic film is formed by plating in which the substrate is dipped into a plating solution containing at least two metal ions selected from the group consisting of Co, Ni, and Fe, andthe magnetic field heat treatment step is performed such that magnetic anisotropy is obtained with a difference (δH=Hd−Hc) of 5 oersteds (Oe) or more in terms of absolute value between a magnetization saturation magnetic field strength (Hd) in an in-plane radial direction of the soft magnetic film and a magnetization saturation magnetic field strength (Hc) in an in-plane circumferential direction of the soft magnetic film and the magnetic anisotropy is symmetric with respect to an axis of the substrate.

10. The method of fabricating a substrate for a magnetic recording medium according to claim 9, wherein a silicon wafer is selected as the substrate, and the method further comprises, before the electroless plating step, a step of forming a base plating layer made of Ni or NiP by dipping the silicon wafer into a plating bath containing a Ni ion or a plating bath obtained by adding a phosphorus reducing agent to a bath containing a Ni ion.

11. The method of fabricating the substrate for a magnetic recording medium according to claim 10, further comprising, before the step of forming the base plating layer, a substrate surface treatment step of removing an oxide film on a surface of the silicon wafer.

12. The method of fabricating a substrate for a magnetic recording medium according to claim 9, wherein magnetic field application means is used in the magnetic field heat treatment, the magnetic field application means being capable of obtaining a magnetic field application area on a surface of the soft magnetic film as large as or larger than one twentieth of an area of the soft magnetic film, and a magnetic field is applied while at least one of the non-magnetic substrate and the magnetic field application means is rotated about the axis of the substrate.

13. The method of fabricating the substrate for a magnetic recording medium according to claim 12, wherein a silicon wafer is selected as the substrate, and the method further comprises, before the electroless plating step, a step of forming a base plating layer made of Ni or NiP by dipping the silicon wafer into a plating bath containing a Ni ion or a plating bath obtained by adding a phosphorus reducing agent to a bath containing a Ni ion.

14. The method of fabricating the substrate for a magnetic recording medium according to claim 13, further comprising, before the step of forming the base plating layer, a substrate surface treatment step of removing an oxide film on a surface of the silicon wafer.

15. The method of fabricating a substrate for a magnetic recording medium according to claim 9, wherein in the magnetic field heat treatment, a heat treatment temperature is 150° C. to 350° C., a magnetic field applied to the substrate has a strength of 50 oersteds (Oe) or more, and a treatment time is selected within a range of five minutes to ten hours.

16. The method of fabricating the substrate for a magnetic recording medium according to claim 15, wherein a silicon wafer is selected as the substrate, and the method further comprises, before the electroless plating step, a step of forming a base plating layer made of Ni or NiP by dipping the silicon wafer into a plating bath containing a Ni ion or a plating bath obtained by adding a phosphorus reducing agent to a bath containing a Ni ion.

17. The method of fabricating the substrate for a magnetic recording medium according to claim 16, further comprising, before the step of forming the base plating layer, a substrate surface treatment step of removing an oxide film on a surface of the silicon wafer.

18. The method of fabricating the substrate for a magnetic recording medium according to claim 15, wherein magnetic field application means is used in the magnetic field heat treatment, the magnetic field application means being capable of obtaining a magnetic field application area on a surface of the soft magnetic film as large as or larger than one twentieth of an area of the soft magnetic film, and a magnetic field is applied while at least one of the non-magnetic substrate and the magnetic field application means is rotated about the axis of the substrate.

19. The method of fabricating the substrate for a magnetic recording medium according to claim 18, wherein a silicon wafer is selected as the substrate, and the method further comprises, before the electroless plating step, a step of forming a base plating layer made of Ni or NiP by dipping the silicon wafer into a plating bath containing a Ni ion or a plating bath obtained by adding a phosphorus reducing agent to a bath containing a Ni ion.

20. The method of fabricating the substrate for a magnetic recording medium according to claim 19, further comprising, before the step of forming the base plating layer, a substrate surface treatment step of removing an oxide film on a surface of the silicon wafer.