This application claims priority from French Patent Application No. 1858682 filed on Sep. 24, 2018. The content of this application is incorporated herein by reference in its entirety.
The field of the invention is microelectronics, and more particularly stripping of a substrate to remove a surface film from it.
In microelectronics, many processes make temporary use of surface layers that then have to be removed from a substrate when the process is complete. This is the case of polymer films, used for example in photolithography.
In general, the substrate is stripped chemically by dissolution of the surface layer by means of solvents, bases or acids or by plasma assisted etching.
The substrate can also be stripped by peeling, using another adhesive polymer film (for example the film marketed under the tradename 3M™ Wafer De-Taping Tape 3305) and capable of using fairly complex spreading and removal machines.
The purpose of the invention is to propose a stripping method that does not make use of aggressive or toxic solutions, while remaining easy to use.
To achieve this, the invention relates to a method of stripping a first substrate to remove a first surface film from it made of a thermoplastic polymer, the first surface film having a first bond energy with the first substrate at a first interface. The method includes bringing the first substrate into contact with a second substrate having a second surface film made of a thermoplastic polymer, the second surface film having a second bond energy with the second substrate, the second bond energy being higher than the first bond energy. The method continues with bringing the first substrate and the second substrate into contact through the first and second surface films and with the formation of an assembly by means of bonding first the and second surface films done such that the first and second surface films have a third bond energy higher than the first bond energy. The method terminates with separation of the assembly at the first interface.
Some preferred but non-limitative aspects of this method are as follows:
Other aspects, purposes, advantages and characteristics of the invention will become clear after reading the following detailed description of preferred embodiments of the invention, given as non-limitative examples, with reference to the appended drawings on which
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In one embodiment of the invention, the first and second surface films 2, 5 are bonded at a temperature higher than the vitreous transition temperature of the thermoplastic polymer of each of the first and second surface films. This bonding is preferably done under vacuum.
In one preferred embodiment, the chemical nature of the thermoplastic polymer of the second surface film is identical to that of the thermoplastic polymer of the first surface film. The result obtained after the bonding is a single homogeneous phase of the thermoplastic polymer, and the strong affinity between the two surfaces brought into contact associated with the low viscosity of the polymer results in a very strong bond.
The temperature can be varied so as to obtain a second bond energy higher than the first bond energy. In the framework of the preferred embodiment presented above, the method can thus comprise a first preliminary step of annealing the first substrate coated with the first surface film at a first temperature and a second preliminary step of annealing the second substrate coated with the second surface film at a second temperature higher than the first temperature.
Complementarily to or independently of this thermal control of bond energies, the surface roughness of the first and second substrates can be varied to obtain a second bond energy higher than the first bond energy. In the framework of the preferred embodiment presented above, the method can thus comprise a first preliminary step in which the first substrate is coated by the first surface film 2 at the first interface 3 and a second preliminary step in which the second substrate is coated by the second surface film 5 at the second interface 6, the first substrate before coating having a first surface roughness on the side of the first interface, the second substrate before coating having a second surface roughness on the side of the second interface, the second surface roughness being higher than the first surface roughness. For example, a preliminary operation can be performed on the second substrate to increase the surface roughness, such as an abrasion operation, for example using a diamond wheel.
Complementarily to or independently of one or both of these bond energy control techniques, the second surface film 5 may lies on an adhesive layer, for example an HMDS (Bis(trimethylsilyl)amino) layer, supported by the second substrate 4 and/or the first surface film 2 may lies on an antiadhesive layer, for example an OPTOOL™ layer, supported by the first substrate 4.
The invention thus discloses a slightly complex method of stripping the first substrate making use of a simple transfer of the first surface layer from the first substrate to the second substrate, and that does not make use any aggressive or toxic solution.
In each of the example embodiments presented below, the thermoplastic polymer of the first and second surface films is the polymer marketed by the Brewer Science company under the tradename BrewerBOND® 305.
In a first example embodiment, 40 cm of this polymer is spread on a first 200 mm diameter silicon wafer by spin coating. An annealing is done at 170° C. The bond energy is about 2 J/m2. 40 cm of this same polymer is then spread on a second 200 mm diameter silicon wafer by spin coating. An annealing is done at 250° C. The bond energy is about 14 J/m2. The two wafers are then bonded at 200° C. under a vacuum through the polymer interface. The transition temperature of this polymer is close to 100° C. The assembly originating from this bonding is separated at ambient temperature and 80 μm of polymer on the second silicon wafer is recovered. There is no longer any polymer on the first silicon wafer, it has been stripped.
In a second example embodiment, 40 cm of this polymer is spread on a first 200 mm diameter silicon wafer that has a roughness RMS of less than 1 nm, by spin coating. Annealing is done at 200° C. and the bond energy is about 9 J/m2. 40 cm of this same polymer is then spread on a second 200 mm diameter silicon wafer that has a roughness RMS of 300 nm after abrasion using a diamond wheel, by spin coating. Annealing is done at 200° C. and the bond energy is higher than 100 J/m2. The two wafers are then bonded at 200° C. under a vacuum through the polymer interface. The transition temperature of this polymer is close to 100° C. The assembly originating from this bonding is separated at ambient temperature and 80 μm of polymer on the second silicon wafer is recovered. There is no longer any polymer on the first silicon wafer, it has been stripped.
Number | Date | Country | Kind |
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1858682 | Sep 2018 | FR | national |