Claims
- 1. An inorganic mineral filler treated with a polysulfide aryl silane coupling agent having the average formula ##STR26## wherein X is a hydrolyzable group selected from the class consisting of halogen, alkoxy, and acyloxy radicals; R' is an alkyl radical containing from 1 to 4 carbon atoms; y has a value of 0 to 2 inclusive; R is a divalent bridging group selected from the class consisting of alkylene and alkyleneoxy radicals containing from 1 to 7 carbon atoms; n has a value of 0 or 1; Ar is an aryl radical containing from 6 to 12 carbon atoms; (S).sub.x is a divalent polysulfide radical each free valence thereof being directly bonded to an aromatic carbon atom of an Ar radical whereby each Ar radical is bonded to another Ar radical through a (S).sub.x radical, x has a value of from 2 to 6; a has a value of at least 2; b has a value of at least 1; and wherein the ratio of a to b is a value ranging from 0.4 to 2; and hydrolyzates and condensates thereof.
- 2. An inorganic mineral filler as defined in claim 1 wherein the inorganic mineral filler is a siliceous or a silicate material.
- 3. An inorganic mineral filler as defined in claim 1, wherein the ratio of a to b is a value of from 0.6 to 2.
- 4. An inorganic mineral filler as defined in claim 1, wherein a is 2 and b is 1.
- 5. An inorganic mineral filler as defined in claim 2, wherein the ratio of a to b is a value ranging from 0.6 to 2.
- 6. An inorganic mineral filler as defined in claim 5, wherein X is selected from the group consisting of methoxy and ethoxy radicals; y is 0; n is 0 and Ar is selected from the group consisting of phenyl and tolyl radicals.
- 7. An inorganic mineral filler as defined in claim 5, wherein X is selected from the group consisting of methoxy and ethoxy radicals; y is 0; n is 1; R is a --C.sub.2 H.sub.4 -- radical and Ar is selected from the group consisting of phenyl and tolyl radicals.
- 8. An inorganic mineral filler as defined in claim 5, wherein a is 2 and b is 1.
Parent Case Info
This application is a divisional application of U.S. application, Ser. No. 536,207, filed Dec. 24, 1974, now U.S. Pat. No. 4,044,037.
US Referenced Citations (4)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1,217,848 |
Dec 1970 |
GBX |
Divisions (1)
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Number |
Date |
Country |
Parent |
536207 |
Dec 1974 |
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